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JPS54111287A - Resin seal planar-structure semiconductor element - Google Patents

Resin seal planar-structure semiconductor element

Info

Publication number
JPS54111287A
JPS54111287A JP1883378A JP1883378A JPS54111287A JP S54111287 A JPS54111287 A JP S54111287A JP 1883378 A JP1883378 A JP 1883378A JP 1883378 A JP1883378 A JP 1883378A JP S54111287 A JPS54111287 A JP S54111287A
Authority
JP
Japan
Prior art keywords
region
type
diffusion
junction
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1883378A
Other languages
Japanese (ja)
Inventor
Tsuneto Sekiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP1883378A priority Critical patent/JPS54111287A/en
Publication of JPS54111287A publication Critical patent/JPS54111287A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To stabilize the dielectric strength of a planar-structure element with extending a space charge region at a stop voltage applying time to PN junction to make a surface potential gradient low by forming the same conductive-type additional region surrounding the outside of the base region which is provided on a semiconductor substrate. CONSTITUTION:An oxide film is used as a mask to form P-type base region 2 on N-type Si substrate 1, which becomes a collector region, by diffusion, and further, two P-type additional regions 7 and 8 are formed in both sides of region 2 surrounding region 2 by diffusion. Next, N<+>-type region 3 and N<+>-type layer 4 are formed in region 2 and on all the reverse face of substrate 1 respectively by diffusion, and the surface exposed part of the PN junction between regions 2 and 3 is covered with oxide film 10, and the outside circumference surface of it is protected by glass film 9. By this constitution, when the stop voltage is applied to the PN junction between collector region 1 and base region 2, the space charge region is extended and the surface potential gradient is lowered to improve the surface dielectric strength because additional regions 7 and 8 exist.
JP1883378A 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element Pending JPS54111287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1883378A JPS54111287A (en) 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1883378A JPS54111287A (en) 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element

Publications (1)

Publication Number Publication Date
JPS54111287A true JPS54111287A (en) 1979-08-31

Family

ID=11982555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1883378A Pending JPS54111287A (en) 1978-02-21 1978-02-21 Resin seal planar-structure semiconductor element

Country Status (1)

Country Link
JP (1) JPS54111287A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165353A (en) * 1980-05-26 1981-12-18 Nec Corp Semiconductor device
JPS5780765A (en) * 1980-11-07 1982-05-20 Toshiba Corp Semiconductor device
JPS5795664A (en) * 1980-12-05 1982-06-14 Toshiba Corp Semiconductor device
JPS57132356A (en) * 1981-02-09 1982-08-16 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56165353A (en) * 1980-05-26 1981-12-18 Nec Corp Semiconductor device
JPS5780765A (en) * 1980-11-07 1982-05-20 Toshiba Corp Semiconductor device
JPS5795664A (en) * 1980-12-05 1982-06-14 Toshiba Corp Semiconductor device
JPS57132356A (en) * 1981-02-09 1982-08-16 Mitsubishi Electric Corp Manufacture of semiconductor device

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