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JPS54107281A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS54107281A
JPS54107281A JP1355778A JP1355778A JPS54107281A JP S54107281 A JPS54107281 A JP S54107281A JP 1355778 A JP1355778 A JP 1355778A JP 1355778 A JP1355778 A JP 1355778A JP S54107281 A JPS54107281 A JP S54107281A
Authority
JP
Japan
Prior art keywords
layer
stripe electrode
laser device
gaas
giving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1355778A
Other languages
Japanese (ja)
Inventor
Naoto Mogi
Motoyuki Yamamoto
Yoichi Unno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1355778A priority Critical patent/JPS54107281A/en
Publication of JPS54107281A publication Critical patent/JPS54107281A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To make laser gain distribution uniform in a resonator by giving a live guide structure to the stripe electrode part and giving a structure where the current is injected to the convex of the live guide and regions in both sides of the live guide in the laser device having a stripe electrode structure.
CONSTITUTION: N-Ga0.7Al0.3As layer 2, p-GaAs layer (active layer) 3, p-Ga0.7Al0.3As layer 4 and p-GaAs layer 5 are formed on n-GaAs substrate 1, and next, Zn is diffused on the surface of layer 5 to form high-density layer 8. Then, before evaporating p-side and n-side electrodes 7 and 7a, layer 4 in the side edge of stripe electrode 6 is removed by the proper-depth etching which does not reach the active layer, and concave 10 is formed.
COPYRIGHT: (C)1979,JPO&Japio
JP1355778A 1978-02-10 1978-02-10 Semiconductor laser device Pending JPS54107281A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1355778A JPS54107281A (en) 1978-02-10 1978-02-10 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1355778A JPS54107281A (en) 1978-02-10 1978-02-10 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS54107281A true JPS54107281A (en) 1979-08-22

Family

ID=11836470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1355778A Pending JPS54107281A (en) 1978-02-10 1978-02-10 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS54107281A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577988A (en) * 1980-06-17 1982-01-16 Mitsubishi Electric Corp Semiconductor laser device
JPS6243193A (en) * 1985-08-20 1987-02-25 Nec Corp Semiconductor laser

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577988A (en) * 1980-06-17 1982-01-16 Mitsubishi Electric Corp Semiconductor laser device
JPS6243193A (en) * 1985-08-20 1987-02-25 Nec Corp Semiconductor laser

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