JPS5394780A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5394780A JPS5394780A JP239577A JP239577A JPS5394780A JP S5394780 A JPS5394780 A JP S5394780A JP 239577 A JP239577 A JP 239577A JP 239577 A JP239577 A JP 239577A JP S5394780 A JPS5394780 A JP S5394780A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- manufacture
- semiconductor device
- substrate
- layer side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP239577A JPS5394780A (en) | 1977-01-14 | 1977-01-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP239577A JPS5394780A (en) | 1977-01-14 | 1977-01-14 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5394780A true JPS5394780A (en) | 1978-08-19 |
Family
ID=11528041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP239577A Pending JPS5394780A (en) | 1977-01-14 | 1977-01-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5394780A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814537A (en) * | 1981-07-17 | 1983-01-27 | Nec Corp | Manufacture of semiconductor device |
JPS5867046A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5889869A (en) * | 1981-11-20 | 1983-05-28 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS6052059A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS62139343A (en) * | 1985-12-13 | 1987-06-23 | Nec Corp | Manufacture of semiconductor device |
-
1977
- 1977-01-14 JP JP239577A patent/JPS5394780A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5814537A (en) * | 1981-07-17 | 1983-01-27 | Nec Corp | Manufacture of semiconductor device |
JPS6351375B2 (en) * | 1981-07-17 | 1988-10-13 | Nippon Electric Co | |
JPS5867046A (en) * | 1981-10-19 | 1983-04-21 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS5889869A (en) * | 1981-11-20 | 1983-05-28 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPS6312389B2 (en) * | 1981-11-20 | 1988-03-18 | Matsushita Electronics Corp | |
JPS6052059A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Manufacture of semiconductor device |
JPS62139343A (en) * | 1985-12-13 | 1987-06-23 | Nec Corp | Manufacture of semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2963256D1 (en) | Method for forming a laminated structure for highly integrated semiconductor devices with an insulating layer between two conductive layers | |
JPS5425178A (en) | Manufacture for semiconductor device | |
JPS52127257A (en) | Displacement converter | |
JPS5394780A (en) | Manufacture of semiconductor device | |
JPS5430785A (en) | Manufacture of semiconductor device | |
JPS5374888A (en) | Manufacture of semiconductor device | |
JPS5370777A (en) | Dielectric isolating method | |
JPS53116087A (en) | Manufacture for multilayer wiring | |
JPS5380183A (en) | Semiconductor device | |
JPS52156581A (en) | Semiconductor device | |
JPS52104072A (en) | High voltage semiconductor device | |
JPS5421293A (en) | Inductance | |
JPS5736874A (en) | Semiconductor photoelectric converter | |
JPS53126270A (en) | Production of semiconductor devices | |
JPS5435791A (en) | Semiconductor pressure sensor | |
JPS5441673A (en) | Semiconductor device and its manufacture | |
JPS53142878A (en) | Semiconductor device | |
JPS5422171A (en) | Manufacture of semiconductor device | |
JPS5389375A (en) | Production of semiconductor device | |
JPS52129279A (en) | Production of semiconductor device | |
JPS53112688A (en) | Manufacture for semiconductor device | |
JPS547867A (en) | Manufacture for semiconductor device | |
JPS53109489A (en) | Semiconductor pressure convertor | |
JPS539483A (en) | Semiconductor device | |
JPS53116073A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20040518 |
|
A521 | Written amendment |
Effective date: 20040813 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
A521 | Written amendment |
Effective date: 20040813 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20041021 |
|
A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20041118 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070903 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071106 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101116 Year of fee payment: 3 |
|
R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111116 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111116 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121116 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121116 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 6 Free format text: PAYMENT UNTIL: 20131116 |
|
EXPY | Cancellation because of completion of term |