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JPS5387190A - Non-volatile memory element - Google Patents

Non-volatile memory element

Info

Publication number
JPS5387190A
JPS5387190A JP175577A JP175577A JPS5387190A JP S5387190 A JPS5387190 A JP S5387190A JP 175577 A JP175577 A JP 175577A JP 175577 A JP175577 A JP 175577A JP S5387190 A JPS5387190 A JP S5387190A
Authority
JP
Japan
Prior art keywords
volatile memory
memory element
semiconductor element
providing
desired signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP175577A
Other languages
Japanese (ja)
Other versions
JPS613038B2 (en
Inventor
Fumio Nagumo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP175577A priority Critical patent/JPS5387190A/en
Publication of JPS5387190A publication Critical patent/JPS5387190A/en
Publication of JPS613038B2 publication Critical patent/JPS613038B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • H10F39/153Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To readily form a semiconductor element as a non-volatile memory by providing a mask matching the desired signal patterns on the top of the semiconductor element and radiating light therethrough.
JP175577A 1977-01-11 1977-01-11 Non-volatile memory element Granted JPS5387190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP175577A JPS5387190A (en) 1977-01-11 1977-01-11 Non-volatile memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP175577A JPS5387190A (en) 1977-01-11 1977-01-11 Non-volatile memory element

Publications (2)

Publication Number Publication Date
JPS5387190A true JPS5387190A (en) 1978-08-01
JPS613038B2 JPS613038B2 (en) 1986-01-29

Family

ID=11510385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP175577A Granted JPS5387190A (en) 1977-01-11 1977-01-11 Non-volatile memory element

Country Status (1)

Country Link
JP (1) JPS5387190A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660417A (en) * 1979-10-23 1981-05-25 Sumitomo Electric Ind Ltd Electrochromic display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5660417A (en) * 1979-10-23 1981-05-25 Sumitomo Electric Ind Ltd Electrochromic display device
JPS6328286B2 (en) * 1979-10-23 1988-06-08 Sumitomo Electric Industries

Also Published As

Publication number Publication date
JPS613038B2 (en) 1986-01-29

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