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JPS538069A - Semiconductor device having high breakdown voltage and method of producing same - Google Patents

Semiconductor device having high breakdown voltage and method of producing same

Info

Publication number
JPS538069A
JPS538069A JP7290177A JP7290177A JPS538069A JP S538069 A JPS538069 A JP S538069A JP 7290177 A JP7290177 A JP 7290177A JP 7290177 A JP7290177 A JP 7290177A JP S538069 A JPS538069 A JP S538069A
Authority
JP
Japan
Prior art keywords
semiconductor device
breakdown voltage
high breakdown
producing same
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7290177A
Other languages
Japanese (ja)
Other versions
JPS5639057B2 (en
Inventor
Suchiyuaato Adoraa Mitsuchieru
Arubaato Keisu Tenpur Buikutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS538069A publication Critical patent/JPS538069A/en
Publication of JPS5639057B2 publication Critical patent/JPS5639057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats

Landscapes

  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP7290177A 1976-06-21 1977-06-21 Semiconductor device having high breakdown voltage and method of producing same Granted JPS538069A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69801476A 1976-06-21 1976-06-21

Publications (2)

Publication Number Publication Date
JPS538069A true JPS538069A (en) 1978-01-25
JPS5639057B2 JPS5639057B2 (en) 1981-09-10

Family

ID=24803556

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7290177A Granted JPS538069A (en) 1976-06-21 1977-06-21 Semiconductor device having high breakdown voltage and method of producing same

Country Status (5)

Country Link
JP (1) JPS538069A (en)
DE (1) DE2727487C2 (en)
FR (1) FR2356276A1 (en)
NL (1) NL180265C (en)
SE (1) SE7707190L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190463A (en) * 1984-10-11 1986-05-08 Hitachi Ltd semiconductor equipment

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1212404B (en) * 1979-02-22 1989-11-22 Rca Corp METHOD OF A SINGLE ATTACK FOR THE FORMATION OF A MESA PRESENTING A MULTIPLE WALL.
EP0144876B1 (en) * 1983-12-07 1988-03-09 BBC Brown Boveri AG Semiconductor device
DE3422051C2 (en) * 1984-06-14 1986-06-26 Brown, Boveri & Cie Ag, 6800 Mannheim Silicon semiconductor component with an edge contour produced by etching technology and a method for producing this component
DE59010606D1 (en) * 1989-03-29 1997-01-30 Siemens Ag Process for the production of a planar pn junction with high dielectric strength
DE10349908C5 (en) * 2003-10-25 2009-02-12 Semikron Elektronik Gmbh & Co. Kg Method for producing a doubly passivated power semiconductor device having a MESA edge structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1052661A (en) * 1963-01-30 1900-01-01
DE1539961A1 (en) * 1965-03-17 1970-01-22 Fuji Electric Co Ltd Semiconductor component with at least two pn junctions in the monocrystalline semiconductor body
DE1276207B (en) * 1966-09-09 1968-08-29 Licentia Gmbh Semiconductor component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6190463A (en) * 1984-10-11 1986-05-08 Hitachi Ltd semiconductor equipment

Also Published As

Publication number Publication date
SE7707190L (en) 1977-12-22
FR2356276B1 (en) 1983-02-04
NL180265B (en) 1986-08-18
NL7706389A (en) 1977-12-23
DE2727487C2 (en) 1985-05-15
NL180265C (en) 1987-01-16
FR2356276A1 (en) 1978-01-20
DE2727487A1 (en) 1977-12-29
JPS5639057B2 (en) 1981-09-10

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