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JPS535967A - Method and device for forming thin film by vapor-phase reaction - Google Patents

Method and device for forming thin film by vapor-phase reaction

Info

Publication number
JPS535967A
JPS535967A JP8049576A JP8049576A JPS535967A JP S535967 A JPS535967 A JP S535967A JP 8049576 A JP8049576 A JP 8049576A JP 8049576 A JP8049576 A JP 8049576A JP S535967 A JPS535967 A JP S535967A
Authority
JP
Japan
Prior art keywords
thin film
vapor
phase reaction
forming thin
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8049576A
Other languages
Japanese (ja)
Inventor
Suguru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8049576A priority Critical patent/JPS535967A/en
Publication of JPS535967A publication Critical patent/JPS535967A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To form a thin film while maintaining a substrate on which the thin film is be formed at a temperature higher than other portions, thereby reducing auto-doping from the substrate to the thin film and preventing decomposition of a reaction gas within a reaction furnace.
JP8049576A 1976-07-06 1976-07-06 Method and device for forming thin film by vapor-phase reaction Pending JPS535967A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8049576A JPS535967A (en) 1976-07-06 1976-07-06 Method and device for forming thin film by vapor-phase reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8049576A JPS535967A (en) 1976-07-06 1976-07-06 Method and device for forming thin film by vapor-phase reaction

Publications (1)

Publication Number Publication Date
JPS535967A true JPS535967A (en) 1978-01-19

Family

ID=13719874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8049576A Pending JPS535967A (en) 1976-07-06 1976-07-06 Method and device for forming thin film by vapor-phase reaction

Country Status (1)

Country Link
JP (1) JPS535967A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286817A (en) * 1985-10-14 1987-04-21 Agency Of Ind Science & Technol Organo metallic chemical vapor deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286817A (en) * 1985-10-14 1987-04-21 Agency Of Ind Science & Technol Organo metallic chemical vapor deposition

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