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JPS5352376A - Production of field effect type semiconductor device - Google Patents

Production of field effect type semiconductor device

Info

Publication number
JPS5352376A
JPS5352376A JP12721176A JP12721176A JPS5352376A JP S5352376 A JPS5352376 A JP S5352376A JP 12721176 A JP12721176 A JP 12721176A JP 12721176 A JP12721176 A JP 12721176A JP S5352376 A JPS5352376 A JP S5352376A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type semiconductor
field effect
effect type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12721176A
Other languages
Japanese (ja)
Inventor
Koichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12721176A priority Critical patent/JPS5352376A/en
Publication of JPS5352376A publication Critical patent/JPS5352376A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:Substrate effect is lowered and the variation in threshold voltage is prevented by lowering the impurity concentration of the substrate.
JP12721176A 1976-10-25 1976-10-25 Production of field effect type semiconductor device Pending JPS5352376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12721176A JPS5352376A (en) 1976-10-25 1976-10-25 Production of field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12721176A JPS5352376A (en) 1976-10-25 1976-10-25 Production of field effect type semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP58157812A Division JPS5956758A (en) 1983-08-31 1983-08-31 Manufacturing method of field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5352376A true JPS5352376A (en) 1978-05-12

Family

ID=14954462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12721176A Pending JPS5352376A (en) 1976-10-25 1976-10-25 Production of field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5352376A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586177A (en) * 1981-06-29 1983-01-13 インテル・コ−ポレ−シヨン Method of manufacturing metal-oxide-semiconductor (MOS) integrated circuits on silicon substrates
JPS59214253A (en) * 1983-05-20 1984-12-04 Matsushita Electronics Corp Manufacture of complementary mos integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS586177A (en) * 1981-06-29 1983-01-13 インテル・コ−ポレ−シヨン Method of manufacturing metal-oxide-semiconductor (MOS) integrated circuits on silicon substrates
JPH0568854B2 (en) * 1981-06-29 1993-09-29 Intel Corp
JPS59214253A (en) * 1983-05-20 1984-12-04 Matsushita Electronics Corp Manufacture of complementary mos integrated circuit
JPH0329185B2 (en) * 1983-05-20 1991-04-23 Matsushita Electronics Corp

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