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JPS5339057A - Production of semiconductor single crystal - Google Patents

Production of semiconductor single crystal

Info

Publication number
JPS5339057A
JPS5339057A JP11396776A JP11396776A JPS5339057A JP S5339057 A JPS5339057 A JP S5339057A JP 11396776 A JP11396776 A JP 11396776A JP 11396776 A JP11396776 A JP 11396776A JP S5339057 A JPS5339057 A JP S5339057A
Authority
JP
Japan
Prior art keywords
single crystal
production
semiconductor single
inert gas
bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11396776A
Other languages
Japanese (ja)
Inventor
Masaaki Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11396776A priority Critical patent/JPS5339057A/en
Publication of JPS5339057A publication Critical patent/JPS5339057A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To minimize the propagation of dislocations by stopping heating the single crystal semiconductor bar having been obtianed at the time of converting multicrystalline semiconductor bar to single crystal by a zone melting method within an inert gas atmosphere, thereafter immediately quenching the bar by blowing an inert gas within the same apparatus.
COPYRIGHT: (C)1978,JPO&Japio
JP11396776A 1976-09-22 1976-09-22 Production of semiconductor single crystal Pending JPS5339057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11396776A JPS5339057A (en) 1976-09-22 1976-09-22 Production of semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11396776A JPS5339057A (en) 1976-09-22 1976-09-22 Production of semiconductor single crystal

Publications (1)

Publication Number Publication Date
JPS5339057A true JPS5339057A (en) 1978-04-10

Family

ID=14625686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11396776A Pending JPS5339057A (en) 1976-09-22 1976-09-22 Production of semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS5339057A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109778313A (en) * 2017-11-13 2019-05-21 胜高股份有限公司 The manufacturing device and manufacturing method of silicon single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109778313A (en) * 2017-11-13 2019-05-21 胜高股份有限公司 The manufacturing device and manufacturing method of silicon single crystal
JP2019089668A (en) * 2017-11-13 2019-06-13 株式会社Sumco Apparatus and method for manufacturing silicon single crystal

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