JPS533902A - Production of silicon crystal membrane - Google Patents
Production of silicon crystal membraneInfo
- Publication number
- JPS533902A JPS533902A JP7703176A JP7703176A JPS533902A JP S533902 A JPS533902 A JP S533902A JP 7703176 A JP7703176 A JP 7703176A JP 7703176 A JP7703176 A JP 7703176A JP S533902 A JPS533902 A JP S533902A
- Authority
- JP
- Japan
- Prior art keywords
- silicon crystal
- production
- crystal membrane
- membrane
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 239000012528 membrane Substances 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 239000013078 crystal Substances 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To melt the central part alone of a silicon membrane formed on a substrate in zone melting by devising the shapes of susceptors so as to obtain a silicon crystal membrane with excellent crystallinity and uniform thickness.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7703176A JPS533902A (en) | 1976-07-01 | 1976-07-01 | Production of silicon crystal membrane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7703176A JPS533902A (en) | 1976-07-01 | 1976-07-01 | Production of silicon crystal membrane |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS533902A true JPS533902A (en) | 1978-01-14 |
JPS5617312B2 JPS5617312B2 (en) | 1981-04-21 |
Family
ID=13622371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7703176A Granted JPS533902A (en) | 1976-07-01 | 1976-07-01 | Production of silicon crystal membrane |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS533902A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59163711A (en) * | 1983-03-07 | 1984-09-14 | 三菱電機株式会社 | Multicore superconductive cable |
JPH01207906A (en) * | 1988-02-15 | 1989-08-21 | Kansai Electric Power Co Inc:The | Superconducting winding |
-
1976
- 1976-07-01 JP JP7703176A patent/JPS533902A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59163711A (en) * | 1983-03-07 | 1984-09-14 | 三菱電機株式会社 | Multicore superconductive cable |
JPH01207906A (en) * | 1988-02-15 | 1989-08-21 | Kansai Electric Power Co Inc:The | Superconducting winding |
Also Published As
Publication number | Publication date |
---|---|
JPS5617312B2 (en) | 1981-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5320767A (en) | X-ray mask supporting underlayer and its production | |
JPS533902A (en) | Production of silicon crystal membrane | |
JPS5247673A (en) | Process for production of silicon crystal film | |
JPS5381069A (en) | Production of susceptor in cvd device | |
JPS53146299A (en) | Production of silicon carbide substrate | |
JPS5386571A (en) | Production of self-alignment type crystal | |
JPS533903A (en) | Production of silicon crystal membrane | |
JPS52114504A (en) | Device for zone melting with hot wire | |
JPS5288590A (en) | Apparatus for manufacturing single crystal | |
JPS52155189A (en) | Multiple layer crystal growth | |
JPS5336180A (en) | Production of semiconductor device | |
JPS5413475A (en) | Preparation of single crystal | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS52106673A (en) | Crystal growing method and device thereof | |
JPS5275276A (en) | Production of semiconductor device | |
JPS5348459A (en) | Production of semiconductor device | |
JPS5252981A (en) | Process for producing bases for chemical plating | |
JPS53143166A (en) | Production and producing apparatus of semiconductor epitaxial layer | |
JPS52135264A (en) | Liquid phase epitaxial growth method | |
JPS5421861A (en) | Production of liquid crystal elements | |
JPS5337594A (en) | Production of active carbon | |
JPS5371689A (en) | Manufacturing apparatus for band type silicon crystal | |
JPS5270752A (en) | Manufacture of semiconductor device | |
JPS533973A (en) | Production of ribbon shaped crystal | |
JPS52139700A (en) | Production of strontium-lanthanum gallate |