JPS5336147A - Circuit for designating mos memory address - Google Patents

Circuit for designating mos memory address

Info

Publication number: JPS5336147A
Authority: JP; Japan
Prior art keywords: designating; circuit; memory address; mos memory; mos
Prior art date: 1976-09-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP10977477A

Other languages

Japanese (ja)

Other versions

JPS6032279B2 (en

Inventor

Hofuman Riyuudeigaa

Fuon Batsuse Pauruuerunaa

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siemens Corp

Original Assignee

Siemens Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-09-15

Filing date

1977-09-12

Publication date

1978-04-04

1977-09-12 Application filed by Siemens Corp filed Critical Siemens Corp

1978-04-04 Publication of JPS5336147A publication Critical patent/JPS5336147A/en

1985-07-26 Publication of JPS6032279B2 publication Critical patent/JPS6032279B2/en

Status Expired legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4082—Address Buffers; level conversion circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Physics & Mathematics (AREA)
Nonlinear Science (AREA)
Computing Systems (AREA)
General Engineering & Computer Science (AREA)
Mathematical Physics (AREA)
Static Random-Access Memory (AREA)
Dram (AREA)

JP52109774A 1976-09-15 1977-09-12 MOS memory address designation circuit Expired JPS6032279B2 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE2641524A DE2641524B1 (en)	1976-09-15	1976-09-15	Arrangement for addressing a MOS memory
DE2641524.7		1976-09-15

Publications (2)

Publication Number	Publication Date
JPS5336147A true JPS5336147A (en)	1978-04-04
JPS6032279B2 JPS6032279B2 (en)	1985-07-26

Family

ID=5987981

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP52109774A Expired JPS6032279B2 (en)	1976-09-15	1977-09-12	MOS memory address designation circuit

Country Status (4)

Country	Link
JP (1)	JPS6032279B2 (en)
DE (1)	DE2641524B1 (en)
FR (1)	FR2365179A1 (en)
GB (1)	GB1588183A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6413289A (en) *	1988-05-06	1989-01-18	Nec Corp	Decoder circuit

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR100206598B1 (en) *	1995-12-29	1999-07-01	김영환	Word line drive
KR101412460B1 (en) *	2012-05-21	2014-07-01	주식회사 뉴핫맥스	Industrial oven heater

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3902082A (en) *	1974-02-11	1975-08-26	Mostek Corp	Dynamic data input latch and decoder

1976
- 1976-09-15 DE DE2641524A patent/DE2641524B1/en active Granted
1977
- 1977-09-08 FR FR7727200A patent/FR2365179A1/en active Granted
- 1977-09-12 JP JP52109774A patent/JPS6032279B2/en not_active Expired
- 1977-09-13 GB GB3806177A patent/GB1588183A/en not_active Expired

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS6413289A (en) *	1988-05-06	1989-01-18	Nec Corp	Decoder circuit
JPH0434235B2 (en) *	1988-05-06	1992-06-05	Nippon Electric Co

Also Published As

Publication number	Publication date
DE2641524B1 (en)	1977-11-17
JPS6032279B2 (en)	1985-07-26
FR2365179B1 (en)	1983-05-13
FR2365179A1 (en)	1978-04-14
DE2641524C2 (en)	1978-07-13
GB1588183A (en)	1981-04-15

Publication	Publication Date	Title
JPS51137339A (en)	1976-11-27	Integrated circuit memory
DE3070410D1 (en)	1985-05-09	Integrated memory circuit
JPS5525897A (en)	1980-02-23	Precharging circuit for memory arrangement
JPS5391538A (en)	1978-08-11	Memory access unit
JPS5350944A (en)	1978-05-09	Mos semiconductor memory
JPS5384433A (en)	1978-07-25	Semiconductor memory
JPS54159827A (en)	1979-12-18	Memory circuit
GB1555043A (en)	1979-11-07	Digital memory circuit
JPS52134385A (en)	1977-11-10	Semiconductor memory
JPS5360121A (en)	1978-05-30	Terminal indicating memory
DE3071990D1 (en)	1987-08-13	Semiconductor memory circuit
JPS535937A (en)	1978-01-19	Firsttin firsttout memory
IE45060L (en)	1977-11-21	Memory circuit
GB2062391B (en)	1983-06-29	Semiconductor memory circuit
GB2006562B (en)	1982-05-26	Memory circuit
JPS51140442A (en)	1976-12-03	Memory circuit
IE42579L (en)	1976-10-30	Memory circuit
JPS52142929A (en)	1977-11-29	Memory
JPS52119829A (en)	1977-10-07	Condenser memory
JPS52119828A (en)	1977-10-07	Condenser memory
DE3071240D1 (en)	1986-01-02	Bipolar programmable read only memory device including address circuits
JPS5339892A (en)	1978-04-12	Semiconductor memory
JPS5391636A (en)	1978-08-11	Recovery standard circuit for semiconductor memory
JPS5335336A (en)	1978-04-01	Memory
JPS5316537A (en)	1978-02-15	High speed circuit for mos random access memory