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JPS533091A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS533091A
JPS533091A JP7691376A JP7691376A JPS533091A JP S533091 A JPS533091 A JP S533091A JP 7691376 A JP7691376 A JP 7691376A JP 7691376 A JP7691376 A JP 7691376A JP S533091 A JPS533091 A JP S533091A
Authority
JP
Japan
Prior art keywords
semiconductor laser
light
laser
region
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7691376A
Other languages
Japanese (ja)
Other versions
JPS5645311B2 (en
Inventor
Yasuo Seki
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7691376A priority Critical patent/JPS533091A/en
Publication of JPS533091A publication Critical patent/JPS533091A/en
Publication of JPS5645311B2 publication Critical patent/JPS5645311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:Laser light modulated at a high speed is obtained by injecting the light from an auxiliary semiconductor light emitting region to the resonator within a main semiconductor laser region.
JP7691376A 1976-06-29 1976-06-29 Semiconductor laser Granted JPS533091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7691376A JPS533091A (en) 1976-06-29 1976-06-29 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7691376A JPS533091A (en) 1976-06-29 1976-06-29 Semiconductor laser

Publications (2)

Publication Number Publication Date
JPS533091A true JPS533091A (en) 1978-01-12
JPS5645311B2 JPS5645311B2 (en) 1981-10-26

Family

ID=13618912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7691376A Granted JPS533091A (en) 1976-06-29 1976-06-29 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS533091A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754141A (en) * 1985-08-22 1988-06-28 High Technology Sensors, Inc. Modulated infrared source
JPS63107295U (en) * 1986-12-29 1988-07-11
US4820655A (en) * 1986-02-21 1989-04-11 Kokusai Denshin Denwa Kabushiki Kaisha Method for manufacturing semiconductor optical integrated device with optical waveguide regions

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS#V25#N9=1974 *
APPLIED PHYSICS LETTERS#V27#N1=1975 *
APPLIED PHYSICS LETTERS#V28#N10=1976 *
IEEE JOURNAL OF QUANTUM ELECTRONICS#V12#M3=1976 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754141A (en) * 1985-08-22 1988-06-28 High Technology Sensors, Inc. Modulated infrared source
US4820655A (en) * 1986-02-21 1989-04-11 Kokusai Denshin Denwa Kabushiki Kaisha Method for manufacturing semiconductor optical integrated device with optical waveguide regions
JPS63107295U (en) * 1986-12-29 1988-07-11

Also Published As

Publication number Publication date
JPS5645311B2 (en) 1981-10-26

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