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JPS5327483Y2 - - Google Patents

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Publication number
JPS5327483Y2
JPS5327483Y2 JP1972117635U JP11763572U JPS5327483Y2 JP S5327483 Y2 JPS5327483 Y2 JP S5327483Y2 JP 1972117635 U JP1972117635 U JP 1972117635U JP 11763572 U JP11763572 U JP 11763572U JP S5327483 Y2 JPS5327483 Y2 JP S5327483Y2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1972117635U
Other languages
Japanese (ja)
Other versions
JPS4973346U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1972117635U priority Critical patent/JPS5327483Y2/ja
Publication of JPS4973346U publication Critical patent/JPS4973346U/ja
Application granted granted Critical
Publication of JPS5327483Y2 publication Critical patent/JPS5327483Y2/ja
Expired legal-status Critical Current

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JP1972117635U 1972-10-11 1972-10-11 Expired JPS5327483Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1972117635U JPS5327483Y2 (en) 1972-10-11 1972-10-11

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1972117635U JPS5327483Y2 (en) 1972-10-11 1972-10-11

Publications (2)

Publication Number Publication Date
JPS4973346U JPS4973346U (en) 1974-06-25
JPS5327483Y2 true JPS5327483Y2 (en) 1978-07-12

Family

ID=28353850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1972117635U Expired JPS5327483Y2 (en) 1972-10-11 1972-10-11

Country Status (1)

Country Link
JP (1) JPS5327483Y2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881615B2 (en) 1988-09-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US6977392B2 (en) 1991-08-23 2005-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US7067844B2 (en) 1990-11-20 2006-06-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7420628B1 (en) 1991-02-16 2008-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of making an active-type LCD with digitally graded display
US7489367B1 (en) 1991-03-26 2009-02-10 Semiconductor Energy Laboratory, Co., Ltd. Electro-optical device and method for driving the same
US7564057B1 (en) 1992-03-17 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an aluminum nitride film
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881615B2 (en) 1988-09-28 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US7435635B2 (en) 1988-09-28 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material
US7067844B2 (en) 1990-11-20 2006-06-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7420628B1 (en) 1991-02-16 2008-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of making an active-type LCD with digitally graded display
US7489367B1 (en) 1991-03-26 2009-02-10 Semiconductor Energy Laboratory, Co., Ltd. Electro-optical device and method for driving the same
US6977392B2 (en) 1991-08-23 2005-12-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US7564057B1 (en) 1992-03-17 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an aluminum nitride film

Also Published As

Publication number Publication date
JPS4973346U (en) 1974-06-25

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