[go: up one dir, main page]

JPS5315086A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5315086A
JPS5315086A JP8986176A JP8986176A JPS5315086A JP S5315086 A JPS5315086 A JP S5315086A JP 8986176 A JP8986176 A JP 8986176A JP 8986176 A JP8986176 A JP 8986176A JP S5315086 A JPS5315086 A JP S5315086A
Authority
JP
Japan
Prior art keywords
semiconductor device
thinly
leaving
regions
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8986176A
Other languages
Japanese (ja)
Other versions
JPS5623300B2 (en
Inventor
Katsuteru Awane
Hiroshi Hashimoto
Tatsuo Morita
Masaru Okuno
Hiroshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP8986176A priority Critical patent/JPS5315086A/en
Publication of JPS5315086A publication Critical patent/JPS5315086A/en
Publication of JPS5623300B2 publication Critical patent/JPS5623300B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the change in impurity concentration in later process without exposing substrate by thinly leaving the silicon film of the regions where no elements are formed.
COPYRIGHT: (C)1978,JPO&Japio
JP8986176A 1976-07-27 1976-07-27 Semiconductor device Granted JPS5315086A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8986176A JPS5315086A (en) 1976-07-27 1976-07-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8986176A JPS5315086A (en) 1976-07-27 1976-07-27 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5315086A true JPS5315086A (en) 1978-02-10
JPS5623300B2 JPS5623300B2 (en) 1981-05-30

Family

ID=13982555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8986176A Granted JPS5315086A (en) 1976-07-27 1976-07-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5315086A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831888A (en) * 1971-08-30 1973-04-26
JPS49135578A (en) * 1973-04-28 1974-12-27
JPS52101978A (en) * 1976-02-23 1977-08-26 Agency Of Ind Science & Technol Preparation of semiconductor device on insulating substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831888A (en) * 1971-08-30 1973-04-26
JPS49135578A (en) * 1973-04-28 1974-12-27
JPS52101978A (en) * 1976-02-23 1977-08-26 Agency Of Ind Science & Technol Preparation of semiconductor device on insulating substrate

Also Published As

Publication number Publication date
JPS5623300B2 (en) 1981-05-30

Similar Documents

Publication Publication Date Title
JPS51127682A (en) Manufacturing process of semiconductor device
JPS52140280A (en) Semiconductor device
JPS5431273A (en) Manufacture of semiconductor device
JPS51127681A (en) Manufacturing process of semiconductor device
JPS5272582A (en) Production of semiconductor device
JPS5230167A (en) Method for production of semiconductor device
JPS5328384A (en) Production method of semiconductor device
JPS5315086A (en) Semiconductor device
JPS538073A (en) Mis type semiconductor device
JPS531471A (en) Manufacture for semiconductor device
JPS51140572A (en) Semiconductor device
JPS5258379A (en) Production of semiconductor element
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS5246777A (en) Semiconductor device
JPS522180A (en) Method of fabricating mos semiconductor integrated circuit
JPS51145267A (en) Manufacture of semiconductor device
JPS53123083A (en) Production of semiconductor device
JPS5311574A (en) Production of semiconductor device
JPS5377168A (en) Production of semiconductor device
JPS5273673A (en) Production of semiconductor device
JPS51132762A (en) Heat-treatment method of semiconductor device
JPS5275266A (en) Production of semiconductor device
JPS5326681A (en) Manufact ure of semiconductor device
JPS5372482A (en) Manufacture for semiconductor device
JPS526081A (en) Semiconductor wafer