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JPS53136986A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS53136986A
JPS53136986A JP5222077A JP5222077A JPS53136986A JP S53136986 A JPS53136986 A JP S53136986A JP 5222077 A JP5222077 A JP 5222077A JP 5222077 A JP5222077 A JP 5222077A JP S53136986 A JPS53136986 A JP S53136986A
Authority
JP
Japan
Prior art keywords
semiconductor laser
layers
forming
adjacent
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5222077A
Other languages
Japanese (ja)
Other versions
JPS5830754B2 (en
Inventor
Hirobumi Namisaki
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP52052220A priority Critical patent/JPS5830754B2/en
Publication of JPS53136986A publication Critical patent/JPS53136986A/en
Publication of JPS5830754B2 publication Critical patent/JPS5830754B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To narrow the angle of the laser beam by forming the active layer and the optical guide layer in adjacent adjacent to each other on the semiconductor substrate, providing an isolated semiconductor layer on these layers, and forming an unevenness inside or near these layers to cause the period to the refractive index and the loss of the light.
JP52052220A 1977-05-06 1977-05-06 semiconductor laser Expired JPS5830754B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52052220A JPS5830754B2 (en) 1977-05-06 1977-05-06 semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52052220A JPS5830754B2 (en) 1977-05-06 1977-05-06 semiconductor laser

Publications (2)

Publication Number Publication Date
JPS53136986A true JPS53136986A (en) 1978-11-29
JPS5830754B2 JPS5830754B2 (en) 1983-07-01

Family

ID=12908657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52052220A Expired JPS5830754B2 (en) 1977-05-06 1977-05-06 semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5830754B2 (en)

Also Published As

Publication number Publication date
JPS5830754B2 (en) 1983-07-01

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