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JPS53135292A - Structure and production of variable stripe width semiconductor laser element - Google Patents

Structure and production of variable stripe width semiconductor laser element

Info

Publication number
JPS53135292A
JPS53135292A JP5099777A JP5099777A JPS53135292A JP S53135292 A JPS53135292 A JP S53135292A JP 5099777 A JP5099777 A JP 5099777A JP 5099777 A JP5099777 A JP 5099777A JP S53135292 A JPS53135292 A JP S53135292A
Authority
JP
Japan
Prior art keywords
production
semiconductor laser
laser element
stripe width
variable stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5099777A
Other languages
Japanese (ja)
Other versions
JPS575069B2 (en
Inventor
Saburo Yamamoto
Morichika Yano
Yukio Kurata
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5099777A priority Critical patent/JPS53135292A/en
Publication of JPS53135292A publication Critical patent/JPS53135292A/en
Publication of JPS575069B2 publication Critical patent/JPS575069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make a oscillation part narrow with preventing the generation of distortion to an active layer and eliminating the horizontal-direction diffusion of the current which does not contribute to laser oscillation, by subjecting the part near the active layer to slight solid-phase diffusion to limit the current path near the active layer.
JP5099777A 1977-04-28 1977-04-28 Structure and production of variable stripe width semiconductor laser element Granted JPS53135292A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5099777A JPS53135292A (en) 1977-04-28 1977-04-28 Structure and production of variable stripe width semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5099777A JPS53135292A (en) 1977-04-28 1977-04-28 Structure and production of variable stripe width semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS53135292A true JPS53135292A (en) 1978-11-25
JPS575069B2 JPS575069B2 (en) 1982-01-28

Family

ID=12874415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5099777A Granted JPS53135292A (en) 1977-04-28 1977-04-28 Structure and production of variable stripe width semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS53135292A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654084A (en) * 1979-10-05 1981-05-13 Nec Corp Compound semiconductor laser apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6896855B2 (en) 2017-06-21 2021-06-30 富士フイルム株式会社 Clip treatment tool

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068288A (en) * 1973-10-17 1975-06-07
JPS50154081A (en) * 1974-05-31 1975-12-11

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5068288A (en) * 1973-10-17 1975-06-07
JPS50154081A (en) * 1974-05-31 1975-12-11

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654084A (en) * 1979-10-05 1981-05-13 Nec Corp Compound semiconductor laser apparatus

Also Published As

Publication number Publication date
JPS575069B2 (en) 1982-01-28

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