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JPS53130990A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
JPS53130990A
JPS53130990A JP4557377A JP4557377A JPS53130990A JP S53130990 A JPS53130990 A JP S53130990A JP 4557377 A JP4557377 A JP 4557377A JP 4557377 A JP4557377 A JP 4557377A JP S53130990 A JPS53130990 A JP S53130990A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
external power
attaching
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4557377A
Other languages
Japanese (ja)
Other versions
JPS5712543B2 (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4557377A priority Critical patent/JPS53130990A/en
Publication of JPS53130990A publication Critical patent/JPS53130990A/en
Publication of JPS5712543B2 publication Critical patent/JPS5712543B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE: To reduce the number of external power supply voltages and to improve the performance, by attaching a circuit controlling the back bias voltage given to the semiconductor substrate depending on the applied voltage, to IC requiring external power supplies two or more types.
COPYRIGHT: (C)1978,JPO&Japio
JP4557377A 1977-04-20 1977-04-20 Integrated circuit device Granted JPS53130990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4557377A JPS53130990A (en) 1977-04-20 1977-04-20 Integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4557377A JPS53130990A (en) 1977-04-20 1977-04-20 Integrated circuit device

Publications (2)

Publication Number Publication Date
JPS53130990A true JPS53130990A (en) 1978-11-15
JPS5712543B2 JPS5712543B2 (en) 1982-03-11

Family

ID=12723079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4557377A Granted JPS53130990A (en) 1977-04-20 1977-04-20 Integrated circuit device

Country Status (1)

Country Link
JP (1) JPS53130990A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2420877A1 (en) * 1978-03-21 1979-10-19 Siemens Ag SEMICONDUCTOR CIRCUIT CONTAINING TWO FIELD-EFFECT TRANSISTORS MEMBERSHIP IN A SEMICONDUCTOR CRYSTAL
EP0022870A1 (en) * 1978-10-30 1981-01-28 Fujitsu Limited Semiconductor circuit
EP0036494A2 (en) * 1980-03-11 1981-09-30 Siemens Aktiengesellschaft Integrated MOS semiconductor circuit
JPS57113490A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2420877A1 (en) * 1978-03-21 1979-10-19 Siemens Ag SEMICONDUCTOR CIRCUIT CONTAINING TWO FIELD-EFFECT TRANSISTORS MEMBERSHIP IN A SEMICONDUCTOR CRYSTAL
EP0022870A1 (en) * 1978-10-30 1981-01-28 Fujitsu Limited Semiconductor circuit
EP0036494A2 (en) * 1980-03-11 1981-09-30 Siemens Aktiengesellschaft Integrated MOS semiconductor circuit
JPS57113490A (en) * 1981-01-07 1982-07-14 Nec Corp Memory circuit

Also Published As

Publication number Publication date
JPS5712543B2 (en) 1982-03-11

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