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JPS53126875A - Gate protecting device - Google Patents

Gate protecting device

Info

Publication number
JPS53126875A
JPS53126875A JP4146477A JP4146477A JPS53126875A JP S53126875 A JPS53126875 A JP S53126875A JP 4146477 A JP4146477 A JP 4146477A JP 4146477 A JP4146477 A JP 4146477A JP S53126875 A JPS53126875 A JP S53126875A
Authority
JP
Japan
Prior art keywords
conductivity type
layer
gate protecting
protecting device
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4146477A
Other languages
Japanese (ja)
Inventor
Hiroo Masuda
Ryoichi Hori
Seiji Kubo
Isao Yoshida
Jun Eto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4146477A priority Critical patent/JPS53126875A/en
Publication of JPS53126875A publication Critical patent/JPS53126875A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To enhance gate protecting effect by forming an impurity layer implanted with an impurity of likewise opposite conductivity type at 10<18> atom/cm<2> or under near the substrate surface between the mutually spaced two oppositive conductivity type regions formed within a one-conductivity type semiconductor and covering said layer with an insulation layer having a dielectric strength of more than 200V.
JP4146477A 1977-04-13 1977-04-13 Gate protecting device Pending JPS53126875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4146477A JPS53126875A (en) 1977-04-13 1977-04-13 Gate protecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4146477A JPS53126875A (en) 1977-04-13 1977-04-13 Gate protecting device

Publications (1)

Publication Number Publication Date
JPS53126875A true JPS53126875A (en) 1978-11-06

Family

ID=12609088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4146477A Pending JPS53126875A (en) 1977-04-13 1977-04-13 Gate protecting device

Country Status (1)

Country Link
JP (1) JPS53126875A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830160A (en) * 1981-08-17 1983-02-22 Fujitsu Ltd MIS type semiconductor device
US5500542A (en) * 1993-02-12 1996-03-19 Fujitsu Limited Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor
JPH08222643A (en) * 1995-02-10 1996-08-30 Nec Corp Input protection circuit for semiconductor device
US6002155A (en) * 1993-02-12 1999-12-14 Fujitsu Limited Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor
US6667538B2 (en) * 2000-05-24 2003-12-23 Sony Corporation Semiconductor device having semiconductor resistance element and fabrication method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830160A (en) * 1981-08-17 1983-02-22 Fujitsu Ltd MIS type semiconductor device
US5500542A (en) * 1993-02-12 1996-03-19 Fujitsu Limited Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor
US5672895A (en) * 1993-02-12 1997-09-30 Fujitsu, Ltd. Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor
US6002155A (en) * 1993-02-12 1999-12-14 Fujitsu Limited Semiconductor integrated circuit with protection circuit against electrostatic breakdown and layout design method therefor
JPH08222643A (en) * 1995-02-10 1996-08-30 Nec Corp Input protection circuit for semiconductor device
US6667538B2 (en) * 2000-05-24 2003-12-23 Sony Corporation Semiconductor device having semiconductor resistance element and fabrication method thereof
US6902992B2 (en) 2000-05-24 2005-06-07 Sony Corporation Method of fabricating semiconductor device having semiconductor resistance element

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