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JPS5274290A - Semiconductor detector - Google Patents

Semiconductor detector

Info

Publication number
JPS5274290A
JPS5274290A JP50149616A JP14961675A JPS5274290A JP S5274290 A JPS5274290 A JP S5274290A JP 50149616 A JP50149616 A JP 50149616A JP 14961675 A JP14961675 A JP 14961675A JP S5274290 A JPS5274290 A JP S5274290A
Authority
JP
Japan
Prior art keywords
semiconductor detector
electrons
radiation
electrode
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50149616A
Other languages
Japanese (ja)
Inventor
Junichi Umeda
Yoshiki Kato
Yoshifumi Katayama
Keisuke Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50149616A priority Critical patent/JPS5274290A/en
Publication of JPS5274290A publication Critical patent/JPS5274290A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:A plate-form semiconductor detector wherein current pulse of the magnitude proportional to the light quantum energy of radiation is made obtainable even with a material with which only electrons or holes arrive at electrode.
JP50149616A 1975-12-17 1975-12-17 Semiconductor detector Pending JPS5274290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50149616A JPS5274290A (en) 1975-12-17 1975-12-17 Semiconductor detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50149616A JPS5274290A (en) 1975-12-17 1975-12-17 Semiconductor detector

Publications (1)

Publication Number Publication Date
JPS5274290A true JPS5274290A (en) 1977-06-22

Family

ID=15479095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50149616A Pending JPS5274290A (en) 1975-12-17 1975-12-17 Semiconductor detector

Country Status (1)

Country Link
JP (1) JPS5274290A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477969A (en) * 1987-09-18 1989-03-23 Shimadzu Corp Semiconductor radiation detecting element
US5723866A (en) * 1996-06-26 1998-03-03 He Holdings, Inc. Method for yield and performance improvement of large area radiation detectors and detectors fabricated in accordance with the method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6477969A (en) * 1987-09-18 1989-03-23 Shimadzu Corp Semiconductor radiation detecting element
US5723866A (en) * 1996-06-26 1998-03-03 He Holdings, Inc. Method for yield and performance improvement of large area radiation detectors and detectors fabricated in accordance with the method

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