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JPS525273A - Transistor - Google Patents

Transistor

Info

Publication number
JPS525273A
JPS525273A JP8086175A JP8086175A JPS525273A JP S525273 A JPS525273 A JP S525273A JP 8086175 A JP8086175 A JP 8086175A JP 8086175 A JP8086175 A JP 8086175A JP S525273 A JPS525273 A JP S525273A
Authority
JP
Japan
Prior art keywords
transistor
chip size
transistor chip
yield improvement
reducing transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8086175A
Other languages
Japanese (ja)
Inventor
Takashi Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8086175A priority Critical patent/JPS525273A/en
Publication of JPS525273A publication Critical patent/JPS525273A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: Yield improvement by reducing transistor chip size.
COPYRIGHT: (C)1977,JPO&Japio
JP8086175A 1975-07-02 1975-07-02 Transistor Pending JPS525273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8086175A JPS525273A (en) 1975-07-02 1975-07-02 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8086175A JPS525273A (en) 1975-07-02 1975-07-02 Transistor

Publications (1)

Publication Number Publication Date
JPS525273A true JPS525273A (en) 1977-01-14

Family

ID=13730110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8086175A Pending JPS525273A (en) 1975-07-02 1975-07-02 Transistor

Country Status (1)

Country Link
JP (1) JPS525273A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc HIGH POWER SWITCHING TRANSISTOR
JPS5743475A (en) * 1981-06-11 1982-03-11 Semiconductor Res Found Semiconductor device
JPS5837957A (en) * 1981-08-29 1983-03-05 Nippon Telegr & Teleph Corp <Ntt> semiconductor equipment
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region
US4841350A (en) * 1982-08-30 1989-06-20 Nishizawa Junichi Static induction photothyristor having a non-homogeneously doped gate

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480503A1 (en) * 1980-04-14 1981-10-16 Silicium Semiconducteur Ssc HIGH POWER SWITCHING TRANSISTOR
JPS5743475A (en) * 1981-06-11 1982-03-11 Semiconductor Res Found Semiconductor device
JPS6366430B2 (en) * 1981-06-11 1988-12-20 Handotai Kenkyu Shinkokai
JPS5837957A (en) * 1981-08-29 1983-03-05 Nippon Telegr & Teleph Corp <Ntt> semiconductor equipment
US4841350A (en) * 1982-08-30 1989-06-20 Nishizawa Junichi Static induction photothyristor having a non-homogeneously doped gate
US4720735A (en) * 1982-08-31 1988-01-19 Nishizawa Junichi Phototransistor having a non-homogeneously base region

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