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JPS525225A - Semi-conductor memory - Google Patents

Semi-conductor memory

Info

Publication number
JPS525225A
JPS525225A JP50082080A JP8208075A JPS525225A JP S525225 A JPS525225 A JP S525225A JP 50082080 A JP50082080 A JP 50082080A JP 8208075 A JP8208075 A JP 8208075A JP S525225 A JPS525225 A JP S525225A
Authority
JP
Japan
Prior art keywords
semi
conductor memory
conductor
memory
differnce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50082080A
Other languages
Japanese (ja)
Inventor
Junichi Mogi
Eiji Noguchi
Kazuyoshi Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50082080A priority Critical patent/JPS525225A/en
Publication of JPS525225A publication Critical patent/JPS525225A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:Semi-conductor memory with read out voltage differnce enlarged and integration density raised.
JP50082080A 1975-07-02 1975-07-02 Semi-conductor memory Pending JPS525225A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50082080A JPS525225A (en) 1975-07-02 1975-07-02 Semi-conductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50082080A JPS525225A (en) 1975-07-02 1975-07-02 Semi-conductor memory

Publications (1)

Publication Number Publication Date
JPS525225A true JPS525225A (en) 1977-01-14

Family

ID=13764468

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50082080A Pending JPS525225A (en) 1975-07-02 1975-07-02 Semi-conductor memory

Country Status (1)

Country Link
JP (1) JPS525225A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011651A (en) * 1973-06-01 1975-02-06
JPS5641590A (en) * 1979-09-11 1981-04-18 Nec Corp Semiconductor memory unit
JPS6258491A (en) * 1985-09-06 1987-03-14 Nec Corp Semiconductor memory cell
JPH04228176A (en) * 1990-05-24 1992-08-18 Toshiba Corp Semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512360A (en) * 1974-06-24 1976-01-09 Mitsubishi Electric Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS512360A (en) * 1974-06-24 1976-01-09 Mitsubishi Electric Corp

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011651A (en) * 1973-06-01 1975-02-06
JPS5750023B2 (en) * 1973-06-01 1982-10-25
JPS5641590A (en) * 1979-09-11 1981-04-18 Nec Corp Semiconductor memory unit
JPS6258491A (en) * 1985-09-06 1987-03-14 Nec Corp Semiconductor memory cell
JPH04228176A (en) * 1990-05-24 1992-08-18 Toshiba Corp Semiconductor memory device

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