JPS5244188A - Semiconductor integrated circuit and process for production of the sam e - Google Patents
Semiconductor integrated circuit and process for production of the sam eInfo
- Publication number
- JPS5244188A JPS5244188A JP50119771A JP11977175A JPS5244188A JP S5244188 A JPS5244188 A JP S5244188A JP 50119771 A JP50119771 A JP 50119771A JP 11977175 A JP11977175 A JP 11977175A JP S5244188 A JPS5244188 A JP S5244188A
- Authority
- JP
- Japan
- Prior art keywords
- sam
- production
- integrated circuit
- semiconductor integrated
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To simultaneously form an n-channel MOSFET and bipolar transistor on one substrate by using anisotropic etching, and prevent impairment of their characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50119771A JPS5244188A (en) | 1975-10-06 | 1975-10-06 | Semiconductor integrated circuit and process for production of the sam e |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50119771A JPS5244188A (en) | 1975-10-06 | 1975-10-06 | Semiconductor integrated circuit and process for production of the sam e |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5244188A true JPS5244188A (en) | 1977-04-06 |
Family
ID=14769787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50119771A Pending JPS5244188A (en) | 1975-10-06 | 1975-10-06 | Semiconductor integrated circuit and process for production of the sam e |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5244188A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53143183A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Semicondutor integrated circuit device and production of the same |
JPS564269A (en) * | 1979-06-25 | 1981-01-17 | Hitachi Ltd | Bipolar cmos semiconductor device and manufacture thereof |
JPS6363478A (en) * | 1986-09-03 | 1988-03-19 | 株式会社タツノ・メカトロニクス | Balling area |
JPH04117975A (en) * | 1990-09-06 | 1992-04-17 | Tele Syst:Yugen | Bowling alley management system |
-
1975
- 1975-10-06 JP JP50119771A patent/JPS5244188A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53143183A (en) * | 1977-05-20 | 1978-12-13 | Hitachi Ltd | Semicondutor integrated circuit device and production of the same |
JPS564269A (en) * | 1979-06-25 | 1981-01-17 | Hitachi Ltd | Bipolar cmos semiconductor device and manufacture thereof |
JPS6363478A (en) * | 1986-09-03 | 1988-03-19 | 株式会社タツノ・メカトロニクス | Balling area |
JPH04117975A (en) * | 1990-09-06 | 1992-04-17 | Tele Syst:Yugen | Bowling alley management system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS543480A (en) | Manufacture of semiconductor device | |
JPS54881A (en) | Semiconductor device | |
JPS51130183A (en) | Semiconductor ic and its process | |
JPS5223277A (en) | Method of manufacteuring insulating gate type field effect transistor | |
JPS5244188A (en) | Semiconductor integrated circuit and process for production of the sam e | |
JPS5215274A (en) | Semiconductor device | |
JPS5211783A (en) | Field effect transistor for integrated circuits | |
JPS5211776A (en) | Method of manufacturing semiconductor device | |
JPS545392A (en) | Semiconductor integrated circuit and its manufacture | |
JPS5249777A (en) | Process for production of field effect transistor | |
JPS526036A (en) | Semiconductor memory circuit | |
JPS5245885A (en) | Semiconductor integrated circuit device and process for production of same | |
JPS51112266A (en) | Semiconductor device production method | |
JPS51148380A (en) | Manufacturing method of electric field semiconductor device | |
JPS5248479A (en) | Semiconductor device and process for production of the same | |
JPS5219978A (en) | Manufacture process for a semiconductor device | |
JPS5310282A (en) | Production of mos type semiconductor integrated circuit | |
JPS5275980A (en) | Production of semiconductor device | |
JPS52142974A (en) | Semiconductor device | |
JPS539488A (en) | Production of semiconductor device | |
JPS5282078A (en) | Production of mos transistor | |
JPS51117581A (en) | Manufacturing method of mos type semiconductor equipment | |
JPS51123552A (en) | Transistor ciqcuit | |
JPS51113469A (en) | Manufacturing method of semiconductor device | |
JPS53120281A (en) | Insulated gate field effect transistor |