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JPS5236468A - Shallow diffusion method - Google Patents

Shallow diffusion method

Info

Publication number
JPS5236468A
JPS5236468A JP11205675A JP11205675A JPS5236468A JP S5236468 A JPS5236468 A JP S5236468A JP 11205675 A JP11205675 A JP 11205675A JP 11205675 A JP11205675 A JP 11205675A JP S5236468 A JPS5236468 A JP S5236468A
Authority
JP
Japan
Prior art keywords
shallow diffusion
diffusion method
shallow
grow
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11205675A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11205675A priority Critical patent/JPS5236468A/en
Publication of JPS5236468A publication Critical patent/JPS5236468A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To grow a diffusion source on a semiconductor substrate and to apply heat with laser pulses, thereby facilitating temperature and time control and forming a shallow diffusion region.
COPYRIGHT: (C)1977,JPO&Japio
JP11205675A 1975-09-18 1975-09-18 Shallow diffusion method Pending JPS5236468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11205675A JPS5236468A (en) 1975-09-18 1975-09-18 Shallow diffusion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11205675A JPS5236468A (en) 1975-09-18 1975-09-18 Shallow diffusion method

Publications (1)

Publication Number Publication Date
JPS5236468A true JPS5236468A (en) 1977-03-19

Family

ID=14576919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11205675A Pending JPS5236468A (en) 1975-09-18 1975-09-18 Shallow diffusion method

Country Status (1)

Country Link
JP (1) JPS5236468A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138831A (en) * 1979-04-18 1980-10-30 Hitachi Ltd Production of semiconductor device
JPS5650577A (en) * 1979-10-01 1981-05-07 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5662319A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Impurity dispersion method
JPS56160034A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Impurity diffusion
JPS63180600U (en) * 1987-05-13 1988-11-22
JPS63302518A (en) * 1987-06-02 1988-12-09 Fujitsu Ltd Manufacture of semiconductor device
JPH07231093A (en) * 1994-02-04 1995-08-29 Lg Semicon Co Ltd Method of manufacturing MOS transistor using doped disposable layer

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138831A (en) * 1979-04-18 1980-10-30 Hitachi Ltd Production of semiconductor device
JPS5650577A (en) * 1979-10-01 1981-05-07 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5662319A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Impurity dispersion method
JPS6339107B2 (en) * 1979-10-26 1988-08-03 Hitachi Ltd
JPS56160034A (en) * 1980-05-14 1981-12-09 Fujitsu Ltd Impurity diffusion
JPS63180600U (en) * 1987-05-13 1988-11-22
JPS63302518A (en) * 1987-06-02 1988-12-09 Fujitsu Ltd Manufacture of semiconductor device
JPH07231093A (en) * 1994-02-04 1995-08-29 Lg Semicon Co Ltd Method of manufacturing MOS transistor using doped disposable layer

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