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JPS5235982A - Method of improving mos tramsistor characteristics on insulator and device obtained by said method - Google Patents

Method of improving mos tramsistor characteristics on insulator and device obtained by said method

Info

Publication number
JPS5235982A
JPS5235982A JP11158275A JP11158275A JPS5235982A JP S5235982 A JPS5235982 A JP S5235982A JP 11158275 A JP11158275 A JP 11158275A JP 11158275 A JP11158275 A JP 11158275A JP S5235982 A JPS5235982 A JP S5235982A
Authority
JP
Japan
Prior art keywords
tramsistor
insulator
device obtained
improving mos
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11158275A
Other languages
Japanese (ja)
Inventor
Boreru Jiyosefu
Ru Goasuko Bansan
Pieeru Suuu Jiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to JP11158275A priority Critical patent/JPS5235982A/en
Publication of JPS5235982A publication Critical patent/JPS5235982A/en
Pending legal-status Critical Current

Links

JP11158275A 1975-09-13 1975-09-13 Method of improving mos tramsistor characteristics on insulator and device obtained by said method Pending JPS5235982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11158275A JPS5235982A (en) 1975-09-13 1975-09-13 Method of improving mos tramsistor characteristics on insulator and device obtained by said method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11158275A JPS5235982A (en) 1975-09-13 1975-09-13 Method of improving mos tramsistor characteristics on insulator and device obtained by said method

Publications (1)

Publication Number Publication Date
JPS5235982A true JPS5235982A (en) 1977-03-18

Family

ID=14565016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11158275A Pending JPS5235982A (en) 1975-09-13 1975-09-13 Method of improving mos tramsistor characteristics on insulator and device obtained by said method

Country Status (1)

Country Link
JP (1) JPS5235982A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153371A (en) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp MOS transistor
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153371A (en) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp MOS transistor
US5264721A (en) * 1989-04-29 1993-11-23 Fujitsu Limited Insulated-gate FET on an SOI-structure

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