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JPS5232675A - Etching solution for chemical compound - Google Patents

Etching solution for chemical compound

Info

Publication number
JPS5232675A
JPS5232675A JP10879575A JP10879575A JPS5232675A JP S5232675 A JPS5232675 A JP S5232675A JP 10879575 A JP10879575 A JP 10879575A JP 10879575 A JP10879575 A JP 10879575A JP S5232675 A JPS5232675 A JP S5232675A
Authority
JP
Japan
Prior art keywords
etching solution
chemical compound
etching
sepcial
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10879575A
Other languages
Japanese (ja)
Other versions
JPS5914893B2 (en
Inventor
Yoshifumi Mori
Ineko Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10879575A priority Critical patent/JPS5914893B2/en
Publication of JPS5232675A publication Critical patent/JPS5232675A/en
Publication of JPS5914893B2 publication Critical patent/JPS5914893B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To enable the etching solution, which is finished through specified capacity ratio between H3PO3, H2O2 and H2O, to perform sepcial etching for GaAs-group compound.
COPYRIGHT: (C)1977,JPO&Japio
JP10879575A 1975-09-08 1975-09-08 Etching liquid for gallium arsenide compound semiconductors Expired JPS5914893B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10879575A JPS5914893B2 (en) 1975-09-08 1975-09-08 Etching liquid for gallium arsenide compound semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10879575A JPS5914893B2 (en) 1975-09-08 1975-09-08 Etching liquid for gallium arsenide compound semiconductors

Publications (2)

Publication Number Publication Date
JPS5232675A true JPS5232675A (en) 1977-03-12
JPS5914893B2 JPS5914893B2 (en) 1984-04-06

Family

ID=14493665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10879575A Expired JPS5914893B2 (en) 1975-09-08 1975-09-08 Etching liquid for gallium arsenide compound semiconductors

Country Status (1)

Country Link
JP (1) JPS5914893B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745816A (en) * 1985-04-01 1988-05-24 Toyota Jidosha Kabushiki Kaisha Lubrication mechanism of gear transmission
JPH0261077A (en) * 1988-08-24 1990-03-01 Mitsubishi Metal Corp Mirror etching solution and mirror etching method for GaAs wafers
US4925813A (en) * 1988-06-24 1990-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices including at least a reactive ion etching step

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745816A (en) * 1985-04-01 1988-05-24 Toyota Jidosha Kabushiki Kaisha Lubrication mechanism of gear transmission
US4925813A (en) * 1988-06-24 1990-05-15 U.S. Philips Corporation Method of manufacturing semiconductor devices including at least a reactive ion etching step
JPH0261077A (en) * 1988-08-24 1990-03-01 Mitsubishi Metal Corp Mirror etching solution and mirror etching method for GaAs wafers

Also Published As

Publication number Publication date
JPS5914893B2 (en) 1984-04-06

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