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JPS5219081A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS5219081A
JPS5219081A JP9471575A JP9471575A JPS5219081A JP S5219081 A JPS5219081 A JP S5219081A JP 9471575 A JP9471575 A JP 9471575A JP 9471575 A JP9471575 A JP 9471575A JP S5219081 A JPS5219081 A JP S5219081A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
boron
mask
reduces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9471575A
Other languages
Japanese (ja)
Other versions
JPS555861B2 (en
Inventor
Yunosuke Kawabe
Katsuyuki Inayoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9471575A priority Critical patent/JPS5219081A/en
Publication of JPS5219081A publication Critical patent/JPS5219081A/en
Publication of JPS555861B2 publication Critical patent/JPS555861B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: In order to produce a semiconductor device which reduces the rise voltage with the direction of easy-flow with a simple production process which does not need the mask-positioning process, by means of selectively injecting the boron into the base region.
COPYRIGHT: (C)1977,JPO&Japio
JP9471575A 1975-08-05 1975-08-05 Production method of semiconductor device Granted JPS5219081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9471575A JPS5219081A (en) 1975-08-05 1975-08-05 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9471575A JPS5219081A (en) 1975-08-05 1975-08-05 Production method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5219081A true JPS5219081A (en) 1977-01-14
JPS555861B2 JPS555861B2 (en) 1980-02-12

Family

ID=14117824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9471575A Granted JPS5219081A (en) 1975-08-05 1975-08-05 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5219081A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128862A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS5669868A (en) * 1979-11-12 1981-06-11 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5690559A (en) * 1979-12-22 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128862A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Junction breakdown write-in type semiconductor memory device and method of fabricating the same
JPS5669868A (en) * 1979-11-12 1981-06-11 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS5690559A (en) * 1979-12-22 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS555861B2 (en) 1980-02-12

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