JPS52144991A - Production of distribution feedback type semiconductor laser - Google Patents
Production of distribution feedback type semiconductor laserInfo
- Publication number
- JPS52144991A JPS52144991A JP6122976A JP6122976A JPS52144991A JP S52144991 A JPS52144991 A JP S52144991A JP 6122976 A JP6122976 A JP 6122976A JP 6122976 A JP6122976 A JP 6122976A JP S52144991 A JPS52144991 A JP S52144991A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor laser
- type semiconductor
- feedback type
- distribution feedback
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000010355 oscillation Effects 0.000 abstract 2
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:A process for production of DFB semiconductor laser devices which cause less light absorption at optical guides, have low threshold value of laser oscillation and make possible laser oscillation at wavelengths shorter than before is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6122976A JPS52144991A (en) | 1976-05-28 | 1976-05-28 | Production of distribution feedback type semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6122976A JPS52144991A (en) | 1976-05-28 | 1976-05-28 | Production of distribution feedback type semiconductor laser |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52144991A true JPS52144991A (en) | 1977-12-02 |
JPS5412397B2 JPS5412397B2 (en) | 1979-05-22 |
Family
ID=13165168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6122976A Granted JPS52144991A (en) | 1976-05-28 | 1976-05-28 | Production of distribution feedback type semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52144991A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS526093A (en) * | 1975-07-04 | 1977-01-18 | Hitachi Ltd | Production method of semiconductor device |
-
1976
- 1976-05-28 JP JP6122976A patent/JPS52144991A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS526093A (en) * | 1975-07-04 | 1977-01-18 | Hitachi Ltd | Production method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5412397B2 (en) | 1979-05-22 |
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