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JPS52137278A - Semiconductor radiation detector - Google Patents

Semiconductor radiation detector

Info

Publication number
JPS52137278A
JPS52137278A JP5315876A JP5315876A JPS52137278A JP S52137278 A JPS52137278 A JP S52137278A JP 5315876 A JP5315876 A JP 5315876A JP 5315876 A JP5315876 A JP 5315876A JP S52137278 A JPS52137278 A JP S52137278A
Authority
JP
Japan
Prior art keywords
radiation detector
semiconductor radiation
detector
radiation
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5315876A
Other languages
Japanese (ja)
Other versions
JPS602787B2 (en
Inventor
Noboru Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51053158A priority Critical patent/JPS602787B2/en
Publication of JPS52137278A publication Critical patent/JPS52137278A/en
Publication of JPS602787B2 publication Critical patent/JPS602787B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To detect mechanically the surface of a radiation detector and prevent the semiconductor from being contaminated with radiation by improving the shielding effect by providing a net-like metallic layer on the sensitive side of the detector.
JP51053158A 1976-05-12 1976-05-12 semiconductor radiation detector Expired JPS602787B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51053158A JPS602787B2 (en) 1976-05-12 1976-05-12 semiconductor radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51053158A JPS602787B2 (en) 1976-05-12 1976-05-12 semiconductor radiation detector

Publications (2)

Publication Number Publication Date
JPS52137278A true JPS52137278A (en) 1977-11-16
JPS602787B2 JPS602787B2 (en) 1985-01-23

Family

ID=12935027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51053158A Expired JPS602787B2 (en) 1976-05-12 1976-05-12 semiconductor radiation detector

Country Status (1)

Country Link
JP (1) JPS602787B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146071A (en) * 1979-05-02 1980-11-14 Toshiba Corp Radiant ray detector of semiconductor
JPS5977245U (en) * 1982-11-13 1984-05-25 富士電機株式会社 semiconductor radiation detector

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55146071A (en) * 1979-05-02 1980-11-14 Toshiba Corp Radiant ray detector of semiconductor
JPS6223268B2 (en) * 1979-05-02 1987-05-22 Tokyo Shibaura Electric Co
JPS5977245U (en) * 1982-11-13 1984-05-25 富士電機株式会社 semiconductor radiation detector

Also Published As

Publication number Publication date
JPS602787B2 (en) 1985-01-23

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