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JPS52117587A - Insulating gate type field effect semiconductor device - Google Patents

Insulating gate type field effect semiconductor device

Info

Publication number
JPS52117587A
JPS52117587A JP3550276A JP3550276A JPS52117587A JP S52117587 A JPS52117587 A JP S52117587A JP 3550276 A JP3550276 A JP 3550276A JP 3550276 A JP3550276 A JP 3550276A JP S52117587 A JPS52117587 A JP S52117587A
Authority
JP
Japan
Prior art keywords
semiconductor device
insulating gate
field effect
type field
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3550276A
Other languages
Japanese (ja)
Other versions
JPS6112390B2 (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3550276A priority Critical patent/JPS52117587A/en
Publication of JPS52117587A publication Critical patent/JPS52117587A/en
Publication of JPS6112390B2 publication Critical patent/JPS6112390B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)

Abstract

PURPOSE: To improve the operational speed and electric performance, by introducing uniconductive type impurity which is self-aligned only to the channel domain beneath the insulating gate, in MIS transistor in which the insualting gate and inverse conduction type domain are formed on the surface of uniconduction type semiconductor.
COPYRIGHT: (C)1977,JPO&Japio
JP3550276A 1976-03-30 1976-03-30 Insulating gate type field effect semiconductor device Granted JPS52117587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3550276A JPS52117587A (en) 1976-03-30 1976-03-30 Insulating gate type field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3550276A JPS52117587A (en) 1976-03-30 1976-03-30 Insulating gate type field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS52117587A true JPS52117587A (en) 1977-10-03
JPS6112390B2 JPS6112390B2 (en) 1986-04-08

Family

ID=12443521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3550276A Granted JPS52117587A (en) 1976-03-30 1976-03-30 Insulating gate type field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS52117587A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127181A (en) * 1976-04-19 1977-10-25 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type filed effect transistor
JPS5539626A (en) * 1978-09-14 1980-03-19 Toshiba Corp Field effect semiconductor device
JPS6254460A (en) * 1985-09-03 1987-03-10 Fujitsu Ltd Manufacturing method of semiconductor device
JPS62136077A (en) * 1985-12-10 1987-06-19 Nec Corp Semiconductor device
JPS63244776A (en) * 1987-03-31 1988-10-12 Toshiba Corp Manufacturing method of insulated gate field effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127181A (en) * 1976-04-19 1977-10-25 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type filed effect transistor
JPS5539626A (en) * 1978-09-14 1980-03-19 Toshiba Corp Field effect semiconductor device
JPS6254460A (en) * 1985-09-03 1987-03-10 Fujitsu Ltd Manufacturing method of semiconductor device
JPS62136077A (en) * 1985-12-10 1987-06-19 Nec Corp Semiconductor device
JPS63244776A (en) * 1987-03-31 1988-10-12 Toshiba Corp Manufacturing method of insulated gate field effect transistor

Also Published As

Publication number Publication date
JPS6112390B2 (en) 1986-04-08

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