[go: up one dir, main page]

JPS52107737A - Semiconductor memory circuit - Google Patents

Semiconductor memory circuit

Info

Publication number
JPS52107737A
JPS52107737A JP2475376A JP2475376A JPS52107737A JP S52107737 A JPS52107737 A JP S52107737A JP 2475376 A JP2475376 A JP 2475376A JP 2475376 A JP2475376 A JP 2475376A JP S52107737 A JPS52107737 A JP S52107737A
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory circuit
shorten
writing
memory unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2475376A
Other languages
Japanese (ja)
Other versions
JPS5846795B2 (en
Inventor
Yasoji Suzuki
Kiyobumi Ochii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51024753A priority Critical patent/JPS5846795B2/en
Publication of JPS52107737A publication Critical patent/JPS52107737A/en
Publication of JPS5846795B2 publication Critical patent/JPS5846795B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a semiconductor memory unit which can shorten the access time without increasing occupied area of semiconductor chip by securing writing regardless of the data reading system with use of exclusive writing circuit.
JP51024753A 1976-03-08 1976-03-08 semiconductor memory circuit Expired JPS5846795B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51024753A JPS5846795B2 (en) 1976-03-08 1976-03-08 semiconductor memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51024753A JPS5846795B2 (en) 1976-03-08 1976-03-08 semiconductor memory circuit

Publications (2)

Publication Number Publication Date
JPS52107737A true JPS52107737A (en) 1977-09-09
JPS5846795B2 JPS5846795B2 (en) 1983-10-18

Family

ID=12146893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51024753A Expired JPS5846795B2 (en) 1976-03-08 1976-03-08 semiconductor memory circuit

Country Status (1)

Country Link
JP (1) JPS5846795B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS626491A (en) * 1985-07-01 1987-01-13 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS626491A (en) * 1985-07-01 1987-01-13 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPS5846795B2 (en) 1983-10-18

Similar Documents

Publication Publication Date Title
NL191683C (en) Semiconductor memory circuit.
SE7706869L (en) DATA MEMORY DEVICE
DE3584362D1 (en) Nonvolatile semiconductor memory device with write circuit.
GB2028046B (en) Memory read/write circuits
NL178729C (en) SEMICONDUCTOR MEMORY.
IT1055161B (en) SEMICONDUCTOR READING ONLY MEMORY
EP0193210A3 (en) Semiconductor memory device with a built-in test circuit
NL179244C (en) SEMICONDUCTOR MEMORY.
DE69022475D1 (en) Semiconductor memory device with high data reading speed.
JPS5330837A (en) Amplifier for reading integrated circuit memory
JPS5570991A (en) Semiconductor highhspeed read*write memory unit
NL7710360A (en) SEMICONDUCTOR MEMORY.
SE7703127L (en) ERROR LIMITING DISC MEMORY READING CIRCUIT
JPS52107737A (en) Semiconductor memory circuit
DE3766393D1 (en) DATA READING CIRCUIT FOR USE IN SEMICONDUCTOR MEMORY DEVICES.
JPS52103925A (en) Random access memory unit
JPS5394835A (en) Memory unit
JPS5317046A (en) Program writing system
JPS5364434A (en) Sense circuit of mos semiconductor memory
JPS52101932A (en) Semiconductor storage device
JPS5350813A (en) Information memory device
JPS53114624A (en) Memory card
JPS5378131A (en) Semiconductor memory element
NL7709976A (en) DYNAMICALLY INTEGRATED SEMICONDUCTOR MEMORY.
JPS5384577A (en) Nonndestructive reading dynamic semiconductor memory