JPS519586A - Handotaisochino seizohoho - Google Patents
Handotaisochino seizohohoInfo
- Publication number
- JPS519586A JPS519586A JP7994874A JP7994874A JPS519586A JP S519586 A JPS519586 A JP S519586A JP 7994874 A JP7994874 A JP 7994874A JP 7994874 A JP7994874 A JP 7994874A JP S519586 A JPS519586 A JP S519586A
- Authority
- JP
- Japan
- Prior art keywords
- handotaisochino seizohoho
- handotaisochino
- seizohoho
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7994874A JPS519586A (en) | 1974-07-12 | 1974-07-12 | Handotaisochino seizohoho |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7994874A JPS519586A (en) | 1974-07-12 | 1974-07-12 | Handotaisochino seizohoho |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS519586A true JPS519586A (en) | 1976-01-26 |
Family
ID=13704515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7994874A Pending JPS519586A (en) | 1974-07-12 | 1974-07-12 | Handotaisochino seizohoho |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS519586A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810835A (en) * | 1981-07-10 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5958838A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Semiconductor device |
| JP2023526524A (en) * | 2020-05-18 | 2023-06-21 | デー・ベー・テー ゲー・エム・ベー・ハー | Electron emitter structure, device comprising the electron emitter structure and method of generating free electrons |
-
1974
- 1974-07-12 JP JP7994874A patent/JPS519586A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5810835A (en) * | 1981-07-10 | 1983-01-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5958838A (en) * | 1982-09-29 | 1984-04-04 | Hitachi Ltd | Semiconductor device |
| JP2023526524A (en) * | 2020-05-18 | 2023-06-21 | デー・ベー・テー ゲー・エム・ベー・ハー | Electron emitter structure, device comprising the electron emitter structure and method of generating free electrons |
| US12272513B2 (en) | 2020-05-18 | 2025-04-08 | Dbt Gmbh | Electron emitter structure, external photoelectric effect emitter, particle collecting device, tunnel surface emitter, semiconductor- based direct emitter and liquid ioniser comprising same, gas sensor comprising an emitter or emitter structure, method for generating free electrons, and method for collecting particles |
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