JPS5120870B1 - - Google Patents
Info
- Publication number
- JPS5120870B1 JPS5120870B1 JP43082815A JP8281568A JPS5120870B1 JP S5120870 B1 JPS5120870 B1 JP S5120870B1 JP 43082815 A JP43082815 A JP 43082815A JP 8281568 A JP8281568 A JP 8281568A JP S5120870 B1 JPS5120870 B1 JP S5120870B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43082815A JPS5120870B1 (ja) | 1968-11-14 | 1968-11-14 | |
| US00876315A US3714522A (en) | 1968-11-14 | 1969-11-13 | Semiconductor device having surface electric-field effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43082815A JPS5120870B1 (ja) | 1968-11-14 | 1968-11-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5120870B1 true JPS5120870B1 (ja) | 1976-06-28 |
Family
ID=13784885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP43082815A Pending JPS5120870B1 (ja) | 1968-11-14 | 1968-11-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5120870B1 (ja) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005277378A (ja) * | 2004-02-24 | 2005-10-06 | Seiko Instruments Inc | 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路 |
| JP2005277377A (ja) * | 2004-02-24 | 2005-10-06 | Seiko Instruments Inc | 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路 |
| JP2012004581A (ja) * | 2004-02-24 | 2012-01-05 | Seiko Instruments Inc | 電界効果トランジスタの高電圧動作方法とそのバイアス回路 |
| JP2012033941A (ja) * | 2004-02-24 | 2012-02-16 | Seiko Instruments Inc | 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧動作回路要素 |
-
1968
- 1968-11-14 JP JP43082815A patent/JPS5120870B1/ja active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005277378A (ja) * | 2004-02-24 | 2005-10-06 | Seiko Instruments Inc | 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路 |
| JP2005277377A (ja) * | 2004-02-24 | 2005-10-06 | Seiko Instruments Inc | 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧回路 |
| JP2012004581A (ja) * | 2004-02-24 | 2012-01-05 | Seiko Instruments Inc | 電界効果トランジスタの高電圧動作方法とそのバイアス回路 |
| JP2012033941A (ja) * | 2004-02-24 | 2012-02-16 | Seiko Instruments Inc | 高電圧動作電界効果トランジスタとそのバイアス回路およびその高電圧動作回路要素 |