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JPS51145274A - Method of manufacturing semiconductor element and structure of semiconductor used in that method - Google Patents

Method of manufacturing semiconductor element and structure of semiconductor used in that method

Info

Publication number
JPS51145274A
JPS51145274A JP51060708A JP6070876A JPS51145274A JP S51145274 A JPS51145274 A JP S51145274A JP 51060708 A JP51060708 A JP 51060708A JP 6070876 A JP6070876 A JP 6070876A JP S51145274 A JPS51145274 A JP S51145274A
Authority
JP
Japan
Prior art keywords
semiconductor element
semiconductor
manufacturing
manufacturing semiconductor
semiconductor used
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51060708A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5711505B2 (nl
Inventor
Hazuretsuto Hosatsuku Harorudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/619,735 external-priority patent/US4063992A/en
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS51145274A publication Critical patent/JPS51145274A/ja
Publication of JPS5711505B2 publication Critical patent/JPS5711505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/466Three-phase CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462Buried-channel CCD
    • H10D44/464Two-phase CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0198Integrating together multiple components covered by H10D44/00, e.g. integrating charge coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
JP51060708A 1975-05-27 1976-05-27 Method of manufacturing semiconductor element and structure of semiconductor used in that method Granted JPS51145274A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58138975A 1975-05-27 1975-05-27
US05/619,735 US4063992A (en) 1975-05-27 1975-10-06 Edge etch method for producing narrow openings to the surface of materials

Publications (2)

Publication Number Publication Date
JPS51145274A true JPS51145274A (en) 1976-12-14
JPS5711505B2 JPS5711505B2 (nl) 1982-03-04

Family

ID=27078310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51060708A Granted JPS51145274A (en) 1975-05-27 1976-05-27 Method of manufacturing semiconductor element and structure of semiconductor used in that method

Country Status (6)

Country Link
JP (1) JPS51145274A (nl)
CA (1) CA1076934A (nl)
DE (1) DE2622790A1 (nl)
FR (1) FR2312856A1 (nl)
GB (1) GB1543845A (nl)
NL (1) NL7605549A (nl)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544570A (en) * 1977-06-13 1979-01-13 Nec Corp Production of semiconductor devices
JPS5533064A (en) * 1978-08-29 1980-03-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede
DE2939456A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nichtueberlappenden poly-silizium-elektroden
DE2939488A1 (de) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von integrierten halbleiterschaltungen, insbesondere ccd-schaltungen, mit selbstjustierten, nicht ueberlappenden poly-silizium-elektroden
US4318759A (en) * 1980-07-21 1982-03-09 Data General Corporation Retro-etch process for integrated circuits
JPS581878A (ja) * 1981-06-26 1983-01-07 Fujitsu Ltd 磁気バブルメモリ素子の製造方法
US5126811A (en) * 1990-01-29 1992-06-30 Mitsubishi Denki Kabushiki Kaisha Charge transfer device with electrode structure of high transfer efficiency
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874178A (nl) * 1971-12-29 1973-10-05

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1292060A (en) * 1969-04-15 1972-10-11 Tokyo Shibaura Electric Co A method of manufacturing a semiconductor device
NL7602917A (nl) * 1975-03-21 1976-09-23 Western Electric Co Werkwijze voor het vervaardigen van een transis- tor.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874178A (nl) * 1971-12-29 1973-10-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS544570A (en) * 1977-06-13 1979-01-13 Nec Corp Production of semiconductor devices
JPS5533064A (en) * 1978-08-29 1980-03-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
AU1437576A (en) 1977-12-01
JPS5711505B2 (nl) 1982-03-04
FR2312856A1 (fr) 1976-12-24
FR2312856B1 (nl) 1982-11-05
DE2622790A1 (de) 1976-12-09
NL7605549A (nl) 1976-11-30
CA1076934A (en) 1980-05-06
GB1543845A (en) 1979-04-11

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