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JPS51142280A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS51142280A
JPS51142280A JP50066021A JP6602175A JPS51142280A JP S51142280 A JPS51142280 A JP S51142280A JP 50066021 A JP50066021 A JP 50066021A JP 6602175 A JP6602175 A JP 6602175A JP S51142280 A JPS51142280 A JP S51142280A
Authority
JP
Japan
Prior art keywords
thyristor
gate turn
concentration
turn
currnets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50066021A
Other languages
Japanese (ja)
Other versions
JPS5856983B2 (en
Inventor
Minoru Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50066021A priority Critical patent/JPS5856983B2/en
Publication of JPS51142280A publication Critical patent/JPS51142280A/en
Publication of JPS5856983B2 publication Critical patent/JPS5856983B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants

Landscapes

  • Thyristors (AREA)

Abstract

PURPOSE:To prevent the damage due to the concentration of currnets, and to reduce both forward-voltage drops and leakage current during the conduction, by dispersing the concentration of currents at the time of turn-off.
JP50066021A 1975-06-03 1975-06-03 Gate turn-off thyristor Expired JPS5856983B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50066021A JPS5856983B2 (en) 1975-06-03 1975-06-03 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50066021A JPS5856983B2 (en) 1975-06-03 1975-06-03 Gate turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS51142280A true JPS51142280A (en) 1976-12-07
JPS5856983B2 JPS5856983B2 (en) 1983-12-17

Family

ID=13303844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50066021A Expired JPS5856983B2 (en) 1975-06-03 1975-06-03 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5856983B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108387A (en) * 1977-02-07 1978-09-21 Gen Electric Junction semiconductor and method of producing same
JPS61287270A (en) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan GTO thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108387A (en) * 1977-02-07 1978-09-21 Gen Electric Junction semiconductor and method of producing same
JPS61287270A (en) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan GTO thyristor

Also Published As

Publication number Publication date
JPS5856983B2 (en) 1983-12-17

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