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JPS51124376A - Method of making silicon single crystal doped with activation of neutron - Google Patents

Method of making silicon single crystal doped with activation of neutron

Info

Publication number
JPS51124376A
JPS51124376A JP2869176A JP2869176A JPS51124376A JP S51124376 A JPS51124376 A JP S51124376A JP 2869176 A JP2869176 A JP 2869176A JP 2869176 A JP2869176 A JP 2869176A JP S51124376 A JPS51124376 A JP S51124376A
Authority
JP
Japan
Prior art keywords
neutron
activation
single crystal
silicon single
making silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2869176A
Other languages
Japanese (ja)
Other versions
JPS5549764B2 (en
Inventor
Purutsueru Yoahimu
Miyuurubaueru Arufuretsuto
Puratsutsueederu Karuru
Roishieru Konratsuto
Shiyuneraa Manfuretsuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19752516514 external-priority patent/DE2516514C3/en
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS51124376A publication Critical patent/JPS51124376A/en
Publication of JPS5549764B2 publication Critical patent/JPS5549764B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2869176A 1975-04-15 1976-03-18 Method of making silicon single crystal doped with activation of neutron Granted JPS51124376A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752516514 DE2516514C3 (en) 1975-04-15 Process for the production of silicon monocrystals doped by neutron activation

Publications (2)

Publication Number Publication Date
JPS51124376A true JPS51124376A (en) 1976-10-29
JPS5549764B2 JPS5549764B2 (en) 1980-12-13

Family

ID=5944002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2869176A Granted JPS51124376A (en) 1975-04-15 1976-03-18 Method of making silicon single crystal doped with activation of neutron

Country Status (4)

Country Link
JP (1) JPS51124376A (en)
BE (1) BE837370A (en)
DK (1) DK104576A (en)
IT (1) IT1059075B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038268A (en) * 2011-08-09 2013-02-21 Fuji Electric Co Ltd Laser printing method for ntd semiconductor substrate

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62148312U (en) * 1986-03-13 1987-09-19

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840659A (en) * 1971-09-28 1973-06-14
JPS499967A (en) * 1972-03-28 1974-01-29

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840659A (en) * 1971-09-28 1973-06-14
JPS499967A (en) * 1972-03-28 1974-01-29

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013038268A (en) * 2011-08-09 2013-02-21 Fuji Electric Co Ltd Laser printing method for ntd semiconductor substrate

Also Published As

Publication number Publication date
BE837370A (en) 1976-05-03
DE2516514B2 (en) 1977-05-05
DE2516514A1 (en) 1976-10-21
JPS5549764B2 (en) 1980-12-13
DK104576A (en) 1976-10-16
IT1059075B (en) 1982-05-31

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