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JPS51121278A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS51121278A
JPS51121278A JP50045812A JP4581275A JPS51121278A JP S51121278 A JPS51121278 A JP S51121278A JP 50045812 A JP50045812 A JP 50045812A JP 4581275 A JP4581275 A JP 4581275A JP S51121278 A JPS51121278 A JP S51121278A
Authority
JP
Japan
Prior art keywords
semiconductor device
functional element
mutually connected
different functional
entirely new
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50045812A
Other languages
Japanese (ja)
Inventor
Shuzo Saeki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP50045812A priority Critical patent/JPS51121278A/en
Priority to US05/645,960 priority patent/US4035831A/en
Priority to GB435/76A priority patent/GB1492707A/en
Priority to DE2601131A priority patent/DE2601131C2/en
Publication of JPS51121278A publication Critical patent/JPS51121278A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/221—Thyristors having amplifying gate structures, e.g. cascade configurations

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To provide an entirely new semiconductor device in which a pressure welded Tr and a different functional element are provided on the surface of a single semiconductor with their circuits mutually connected.
JP50045812A 1975-04-17 1975-04-17 Semiconductor device Pending JPS51121278A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50045812A JPS51121278A (en) 1975-04-17 1975-04-17 Semiconductor device
US05/645,960 US4035831A (en) 1975-04-17 1976-01-02 Radial emitter pressure contact type semiconductor devices
GB435/76A GB1492707A (en) 1975-04-17 1976-01-07 Pressure contact type semiconductor devices
DE2601131A DE2601131C2 (en) 1975-04-17 1976-01-14 Semiconductor devices with a pressure contact transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50045812A JPS51121278A (en) 1975-04-17 1975-04-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS51121278A true JPS51121278A (en) 1976-10-23

Family

ID=12729654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50045812A Pending JPS51121278A (en) 1975-04-17 1975-04-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS51121278A (en)

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