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JPS5093779A - - Google Patents

Info

Publication number
JPS5093779A
JPS5093779A JP48142459A JP14245973A JPS5093779A JP S5093779 A JPS5093779 A JP S5093779A JP 48142459 A JP48142459 A JP 48142459A JP 14245973 A JP14245973 A JP 14245973A JP S5093779 A JPS5093779 A JP S5093779A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48142459A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48142459A priority Critical patent/JPS5093779A/ja
Publication of JPS5093779A publication Critical patent/JPS5093779A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP48142459A 1973-12-21 1973-12-21 Pending JPS5093779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48142459A JPS5093779A (en) 1973-12-21 1973-12-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48142459A JPS5093779A (en) 1973-12-21 1973-12-21

Publications (1)

Publication Number Publication Date
JPS5093779A true JPS5093779A (en) 1975-07-26

Family

ID=15315796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48142459A Pending JPS5093779A (en) 1973-12-21 1973-12-21

Country Status (1)

Country Link
JP (1) JPS5093779A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53149771A (en) * 1977-06-01 1978-12-27 Matsushita Electric Ind Co Ltd Mis-type semiconductor device and its manufacture
JPS5795670A (en) * 1980-10-15 1982-06-14 Philips Nv Semiconductor device and method of producing same
JPS62500898A (en) * 1984-11-26 1987-04-09 アメリカン テレフオン アンド テレグラフ カムパニ− Trench gate structure
JP2003518748A (en) * 1999-12-21 2003-06-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Self-aligned silicon carbide LMOSFET
WO2020162620A1 (en) * 2019-02-07 2020-08-13 ローム株式会社 Semiconductor device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53149771A (en) * 1977-06-01 1978-12-27 Matsushita Electric Ind Co Ltd Mis-type semiconductor device and its manufacture
JPS5795670A (en) * 1980-10-15 1982-06-14 Philips Nv Semiconductor device and method of producing same
JPS62500898A (en) * 1984-11-26 1987-04-09 アメリカン テレフオン アンド テレグラフ カムパニ− Trench gate structure
JP2003518748A (en) * 1999-12-21 2003-06-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Self-aligned silicon carbide LMOSFET
JP4990458B2 (en) * 1999-12-21 2012-08-01 エヌエックスピー ビー ヴィ Self-aligned silicon carbide LMOSFET
WO2020162620A1 (en) * 2019-02-07 2020-08-13 ローム株式会社 Semiconductor device
CN113396482A (en) * 2019-02-07 2021-09-14 罗姆股份有限公司 Semiconductor device with a plurality of semiconductor chips
JPWO2020162620A1 (en) * 2019-02-07 2021-12-09 ローム株式会社 Semiconductor device
CN113396482B (en) * 2019-02-07 2023-12-19 罗姆股份有限公司 Semiconductor device
US12100764B2 (en) 2019-02-07 2024-09-24 Rohm Co., Ltd. Semiconductor device

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