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JPS503780A - - Google Patents

Info

Publication number
JPS503780A
JPS503780A JP48053782A JP5378273A JPS503780A JP S503780 A JPS503780 A JP S503780A JP 48053782 A JP48053782 A JP 48053782A JP 5378273 A JP5378273 A JP 5378273A JP S503780 A JPS503780 A JP S503780A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48053782A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48053782A priority Critical patent/JPS503780A/ja
Publication of JPS503780A publication Critical patent/JPS503780A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP48053782A 1973-05-15 1973-05-15 Pending JPS503780A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48053782A JPS503780A (ja) 1973-05-15 1973-05-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48053782A JPS503780A (ja) 1973-05-15 1973-05-15

Publications (1)

Publication Number Publication Date
JPS503780A true JPS503780A (ja) 1975-01-16

Family

ID=12952374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48053782A Pending JPS503780A (ja) 1973-05-15 1973-05-15

Country Status (1)

Country Link
JP (1) JPS503780A (ja)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143161A (en) * 1977-05-18 1978-12-13 Eastman Kodak Co Method of producing semiconductor article
JPS5666063A (en) * 1979-10-31 1981-06-04 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5687361A (en) * 1979-12-19 1981-07-15 Hitachi Ltd Semiconductor device and its manufacture
JPS56111238A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor ic device
JPS5919313A (ja) * 1982-07-26 1984-01-31 Hitachi Ltd 半導体装置の製法
JPS5972165A (ja) * 1983-09-05 1984-04-24 Hitachi Ltd 半導体装置
JPS59210638A (ja) * 1984-04-06 1984-11-29 Hitachi Ltd 半導体装置の製造方法
JPS60192365A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 薄膜トランジスタの製造方法
JPS6187316A (ja) * 1984-10-05 1986-05-02 Nippon Telegr & Teleph Corp <Ntt> 埋め込みシリコン膜の製造方法
JPS61117861A (ja) * 1984-11-14 1986-06-05 Nissan Motor Co Ltd フイルタ装置
JPS61289618A (ja) * 1985-06-18 1986-12-19 Canon Inc 半導体装置の製造方法
JPS6239047A (ja) * 1985-08-13 1987-02-20 Toppan Printing Co Ltd Ｃｍｏｓ型集積回路素子
JPH02230130A (ja) * 1989-12-15 1990-09-12 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPH05257163A (ja) * 1991-08-09 1993-10-08 Semiconductor Energy Lab Co Ltd 複合半導体装置
JPH05283698A (ja) * 1992-02-07 1993-10-29 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPH06326313A (ja) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置およびｍｉｓ型半導体装置作製方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558374A (en) * 1968-01-15 1971-01-26 Ibm Polycrystalline film having controlled grain size and method of making same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3558374A (en) * 1968-01-15 1971-01-26 Ibm Polycrystalline film having controlled grain size and method of making same

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53143161A (en) * 1977-05-18 1978-12-13 Eastman Kodak Co Method of producing semiconductor article
JPS6152579B2 (ja) * 1979-10-31 1986-11-13 Mitsubishi Electric Corp
JPS5666063A (en) * 1979-10-31 1981-06-04 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS5687361A (en) * 1979-12-19 1981-07-15 Hitachi Ltd Semiconductor device and its manufacture
JPS56111238A (en) * 1980-01-07 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor ic device
JPS5919313A (ja) * 1982-07-26 1984-01-31 Hitachi Ltd 半導体装置の製法
JPS5972165A (ja) * 1983-09-05 1984-04-24 Hitachi Ltd 半導体装置
JPH0520912B2 (ja) * 1983-09-05 1993-03-22 Hitachi Ltd
JPS60192365A (ja) * 1984-03-13 1985-09-30 Mitsubishi Electric Corp 薄膜トランジスタの製造方法
JPS59210638A (ja) * 1984-04-06 1984-11-29 Hitachi Ltd 半導体装置の製造方法
JPS6187316A (ja) * 1984-10-05 1986-05-02 Nippon Telegr & Teleph Corp <Ntt> 埋め込みシリコン膜の製造方法
JPS61117861A (ja) * 1984-11-14 1986-06-05 Nissan Motor Co Ltd フイルタ装置
JPS61289618A (ja) * 1985-06-18 1986-12-19 Canon Inc 半導体装置の製造方法
JPS6239047A (ja) * 1985-08-13 1987-02-20 Toppan Printing Co Ltd Ｃｍｏｓ型集積回路素子
JPH02230130A (ja) * 1989-12-15 1990-09-12 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPH05257163A (ja) * 1991-08-09 1993-10-08 Semiconductor Energy Lab Co Ltd 複合半導体装置
JPH05283698A (ja) * 1992-02-07 1993-10-29 Semiconductor Energy Lab Co Ltd 液晶電気光学装置
JPH06326313A (ja) * 1994-04-19 1994-11-25 Semiconductor Energy Lab Co Ltd Ｍｉｓ型半導体装置およびｍｉｓ型半導体装置作製方法

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