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JPS5032870A - - Google Patents

Info

Publication number
JPS5032870A
JPS5032870A JP48083372A JP8337273A JPS5032870A JP S5032870 A JPS5032870 A JP S5032870A JP 48083372 A JP48083372 A JP 48083372A JP 8337273 A JP8337273 A JP 8337273A JP S5032870 A JPS5032870 A JP S5032870A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48083372A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48083372A priority Critical patent/JPS5032870A/ja
Priority to GB3236174A priority patent/GB1474722A/en
Priority to CA205,504A priority patent/CA1031042A/en
Priority to US05/491,117 priority patent/US3979764A/en
Priority to DE2435636A priority patent/DE2435636A1/de
Publication of JPS5032870A publication Critical patent/JPS5032870A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0035Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
    • H03G1/007Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP48083372A 1973-07-24 1973-07-24 Pending JPS5032870A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP48083372A JPS5032870A (ja) 1973-07-24 1973-07-24
GB3236174A GB1474722A (en) 1973-07-24 1974-07-22 Signal control circuits
CA205,504A CA1031042A (en) 1973-07-24 1974-07-23 Switching circuit
US05/491,117 US3979764A (en) 1973-07-24 1974-07-23 Controlled fading switching circuit
DE2435636A DE2435636A1 (de) 1973-07-24 1974-07-24 Schalteinrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48083372A JPS5032870A (ja) 1973-07-24 1973-07-24

Publications (1)

Publication Number Publication Date
JPS5032870A true JPS5032870A (ja) 1975-03-29

Family

ID=13800579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48083372A Pending JPS5032870A (ja) 1973-07-24 1973-07-24

Country Status (5)

Country Link
US (1) US3979764A (ja)
JP (1) JPS5032870A (ja)
CA (1) CA1031042A (ja)
DE (1) DE2435636A1 (ja)
GB (1) GB1474722A (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4492972A (en) * 1981-08-17 1985-01-08 Honeywell Inc. JFET Monolithic integrated circuit with input bias current temperature compensation
EP0606094B1 (en) * 1993-01-08 1999-10-06 Sony Corporation Monolithic microwave integrated circuit
DE102010046702B4 (de) * 2010-09-28 2021-12-09 Atmel Corp. Schaltung und Verfahren zum Ladungsausgleich zwischen in Reihe geschalteten Akkumulatorzellen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335342A (en) * 1962-06-11 1967-08-08 Fairchild Camera Instr Co Field-effect transistors
GB1155578A (en) * 1965-10-08 1969-06-18 Sony Corp Field Effect Transistor
US3553541A (en) * 1969-04-17 1971-01-05 Bell Telephone Labor Inc Bilateral switch using combination of field effect transistors and bipolar transistors
US3761785A (en) * 1971-04-23 1973-09-25 Bell Telephone Labor Inc Methods for making transistor structures
US3808515A (en) * 1972-11-03 1974-04-30 Bell Telephone Labor Inc Chopper devices and circuits

Also Published As

Publication number Publication date
CA1031042A (en) 1978-05-09
GB1474722A (en) 1977-05-25
DE2435636A1 (de) 1975-02-13
US3979764A (en) 1976-09-07

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