JPS5032870A - - Google Patents
Info
- Publication number
- JPS5032870A JPS5032870A JP48083372A JP8337273A JPS5032870A JP S5032870 A JPS5032870 A JP S5032870A JP 48083372 A JP48083372 A JP 48083372A JP 8337273 A JP8337273 A JP 8337273A JP S5032870 A JPS5032870 A JP S5032870A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using field-effect transistors [FET]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
Landscapes
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48083372A JPS5032870A (ja) | 1973-07-24 | 1973-07-24 | |
GB3236174A GB1474722A (en) | 1973-07-24 | 1974-07-22 | Signal control circuits |
CA205,504A CA1031042A (en) | 1973-07-24 | 1974-07-23 | Switching circuit |
US05/491,117 US3979764A (en) | 1973-07-24 | 1974-07-23 | Controlled fading switching circuit |
DE2435636A DE2435636A1 (de) | 1973-07-24 | 1974-07-24 | Schalteinrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP48083372A JPS5032870A (ja) | 1973-07-24 | 1973-07-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5032870A true JPS5032870A (ja) | 1975-03-29 |
Family
ID=13800579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP48083372A Pending JPS5032870A (ja) | 1973-07-24 | 1973-07-24 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3979764A (ja) |
JP (1) | JPS5032870A (ja) |
CA (1) | CA1031042A (ja) |
DE (1) | DE2435636A1 (ja) |
GB (1) | GB1474722A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4492972A (en) * | 1981-08-17 | 1985-01-08 | Honeywell Inc. | JFET Monolithic integrated circuit with input bias current temperature compensation |
EP0606094B1 (en) * | 1993-01-08 | 1999-10-06 | Sony Corporation | Monolithic microwave integrated circuit |
DE102010046702B4 (de) * | 2010-09-28 | 2021-12-09 | Atmel Corp. | Schaltung und Verfahren zum Ladungsausgleich zwischen in Reihe geschalteten Akkumulatorzellen |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3335342A (en) * | 1962-06-11 | 1967-08-08 | Fairchild Camera Instr Co | Field-effect transistors |
GB1155578A (en) * | 1965-10-08 | 1969-06-18 | Sony Corp | Field Effect Transistor |
US3553541A (en) * | 1969-04-17 | 1971-01-05 | Bell Telephone Labor Inc | Bilateral switch using combination of field effect transistors and bipolar transistors |
US3761785A (en) * | 1971-04-23 | 1973-09-25 | Bell Telephone Labor Inc | Methods for making transistor structures |
US3808515A (en) * | 1972-11-03 | 1974-04-30 | Bell Telephone Labor Inc | Chopper devices and circuits |
-
1973
- 1973-07-24 JP JP48083372A patent/JPS5032870A/ja active Pending
-
1974
- 1974-07-22 GB GB3236174A patent/GB1474722A/en not_active Expired
- 1974-07-23 US US05/491,117 patent/US3979764A/en not_active Expired - Lifetime
- 1974-07-23 CA CA205,504A patent/CA1031042A/en not_active Expired
- 1974-07-24 DE DE2435636A patent/DE2435636A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
CA1031042A (en) | 1978-05-09 |
GB1474722A (en) | 1977-05-25 |
DE2435636A1 (de) | 1975-02-13 |
US3979764A (en) | 1976-09-07 |