JPS49132984A - - Google Patents
Info
- Publication number
- JPS49132984A JPS49132984A JP47109385A JP10938572A JPS49132984A JP S49132984 A JPS49132984 A JP S49132984A JP 47109385 A JP47109385 A JP 47109385A JP 10938572 A JP10938572 A JP 10938572A JP S49132984 A JPS49132984 A JP S49132984A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00194366A US3829890A (en) | 1971-11-01 | 1971-11-01 | Ion implanted resistor and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS49132984A true JPS49132984A (ja) | 1974-12-20 |
Family
ID=22717312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47109385A Pending JPS49132984A (ja) | 1971-11-01 | 1972-10-31 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3829890A (ja) |
| JP (1) | JPS49132984A (ja) |
| DE (1) | DE2253683A1 (ja) |
| FR (1) | FR2165865B1 (ja) |
| GB (1) | GB1384935A (ja) |
| IT (1) | IT970101B (ja) |
| NL (1) | NL7214669A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51103780A (ja) * | 1975-03-10 | 1976-09-13 | Tokyo Shibaura Electric Co | Handotaisoshi |
| JPS5240986A (en) * | 1975-09-27 | 1977-03-30 | Toshiba Corp | Process for production of semiconductor element |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3947866A (en) * | 1973-06-25 | 1976-03-30 | Signetics Corporation | Ion implanted resistor having controlled temperature coefficient and method |
| DE2755418A1 (de) * | 1977-12-13 | 1979-06-21 | Bosch Gmbh Robert | Verfahren zur herstellung eines halbleiter-bauelements |
| IT1214621B (it) * | 1985-07-04 | 1990-01-18 | Ates Componenti Elettron | Procedimento per realizzare una resistenza di alto valore ohmico e minimo ingombro impiantata in un corpo di semiconduttore, e resistenza ottenuta. |
| US6709943B2 (en) * | 2002-08-26 | 2004-03-23 | Winbond Electronics Corporation | Method of forming semiconductor diffused resistors with optimized temperature dependence |
| KR100887884B1 (ko) * | 2007-10-01 | 2009-03-06 | 주식회사 동부하이텍 | 반도체 소자 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3683306A (en) * | 1968-11-19 | 1972-08-08 | Philips Corp | Temperature compensated semiconductor resistor containing neutral inactive impurities |
-
1971
- 1971-11-01 US US00194366A patent/US3829890A/en not_active Expired - Lifetime
-
1972
- 1972-10-20 GB GB4846772A patent/GB1384935A/en not_active Expired
- 1972-10-30 NL NL7214669A patent/NL7214669A/xx not_active Application Discontinuation
- 1972-10-31 IT IT31156/72A patent/IT970101B/it active
- 1972-10-31 JP JP47109385A patent/JPS49132984A/ja active Pending
- 1972-10-31 FR FR7238633A patent/FR2165865B1/fr not_active Expired
- 1972-11-02 DE DE2253683A patent/DE2253683A1/de active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3548269A (en) * | 1968-12-03 | 1970-12-15 | Sprague Electric Co | Resistive layer semiconductive device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51103780A (ja) * | 1975-03-10 | 1976-09-13 | Tokyo Shibaura Electric Co | Handotaisoshi |
| JPS5240986A (en) * | 1975-09-27 | 1977-03-30 | Toshiba Corp | Process for production of semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1384935A (en) | 1975-02-26 |
| FR2165865A1 (ja) | 1973-08-10 |
| US3829890A (en) | 1974-08-13 |
| FR2165865B1 (ja) | 1977-05-20 |
| IT970101B (it) | 1974-04-10 |
| NL7214669A (ja) | 1973-05-03 |
| DE2253683A1 (de) | 1973-05-24 |