JPS4910664A - - Google Patents
Info
- Publication number
- JPS4910664A JPS4910664A JP5080472A JP5080472A JPS4910664A JP S4910664 A JPS4910664 A JP S4910664A JP 5080472 A JP5080472 A JP 5080472A JP 5080472 A JP5080472 A JP 5080472A JP S4910664 A JPS4910664 A JP S4910664A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5080472A JPS4910664A (sr) | 1972-05-24 | 1972-05-24 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5080472A JPS4910664A (sr) | 1972-05-24 | 1972-05-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4910664A true JPS4910664A (sr) | 1974-01-30 |
Family
ID=12868948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5080472A Pending JPS4910664A (sr) | 1972-05-24 | 1972-05-24 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS4910664A (sr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53140959U (sr) * | 1977-04-14 | 1978-11-07 | ||
JPS5983995A (ja) * | 1982-10-29 | 1984-05-15 | Fujitsu Ltd | 単結晶の成長方法 |
JPS6311595A (ja) * | 1986-07-01 | 1988-01-19 | Sumitomo Electric Ind Ltd | 不純物の均一ド−ピング法 |
WO2014159879A1 (en) * | 2013-03-14 | 2014-10-02 | Sunedison, Inc. | Czochralski crucible for controlling oxygen and related methods |
-
1972
- 1972-05-24 JP JP5080472A patent/JPS4910664A/ja active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53140959U (sr) * | 1977-04-14 | 1978-11-07 | ||
JPS5818065Y2 (ja) * | 1977-04-14 | 1983-04-12 | 松下電器産業株式会社 | 熱交換器 |
JPS5983995A (ja) * | 1982-10-29 | 1984-05-15 | Fujitsu Ltd | 単結晶の成長方法 |
JPS6311595A (ja) * | 1986-07-01 | 1988-01-19 | Sumitomo Electric Ind Ltd | 不純物の均一ド−ピング法 |
JPH0379318B2 (sr) * | 1986-07-01 | 1991-12-18 | Sumitomo Electric Industries | |
WO2014159879A1 (en) * | 2013-03-14 | 2014-10-02 | Sunedison, Inc. | Czochralski crucible for controlling oxygen and related methods |
CN105247114A (zh) * | 2013-03-14 | 2016-01-13 | 爱迪生太阳能公司 | 用于控制氧的提拉坩埚和相关方法 |
US9863062B2 (en) | 2013-03-14 | 2018-01-09 | Corner Star Limited | Czochralski crucible for controlling oxygen and related methods |
TWI632256B (zh) * | 2013-03-14 | 2018-08-11 | 香港商各星有限公司 | 用於控制氧之柴可斯基(czochralski)坩堝及相關方法 |
US10450670B2 (en) | 2013-03-14 | 2019-10-22 | Corner Star Limited | Methods for growing a crystal ingot with reduced dislocations from a crucible |