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JPS4910664A - - Google Patents

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Publication number
JPS4910664A
JPS4910664A JP5080472A JP5080472A JPS4910664A JP S4910664 A JPS4910664 A JP S4910664A JP 5080472 A JP5080472 A JP 5080472A JP 5080472 A JP5080472 A JP 5080472A JP S4910664 A JPS4910664 A JP S4910664A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5080472A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5080472A priority Critical patent/JPS4910664A/ja
Publication of JPS4910664A publication Critical patent/JPS4910664A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP5080472A 1972-05-24 1972-05-24 Pending JPS4910664A (sr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5080472A JPS4910664A (sr) 1972-05-24 1972-05-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5080472A JPS4910664A (sr) 1972-05-24 1972-05-24

Publications (1)

Publication Number Publication Date
JPS4910664A true JPS4910664A (sr) 1974-01-30

Family

ID=12868948

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5080472A Pending JPS4910664A (sr) 1972-05-24 1972-05-24

Country Status (1)

Country Link
JP (1) JPS4910664A (sr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53140959U (sr) * 1977-04-14 1978-11-07
JPS5983995A (ja) * 1982-10-29 1984-05-15 Fujitsu Ltd 単結晶の成長方法
JPS6311595A (ja) * 1986-07-01 1988-01-19 Sumitomo Electric Ind Ltd 不純物の均一ド−ピング法
WO2014159879A1 (en) * 2013-03-14 2014-10-02 Sunedison, Inc. Czochralski crucible for controlling oxygen and related methods

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53140959U (sr) * 1977-04-14 1978-11-07
JPS5818065Y2 (ja) * 1977-04-14 1983-04-12 松下電器産業株式会社 熱交換器
JPS5983995A (ja) * 1982-10-29 1984-05-15 Fujitsu Ltd 単結晶の成長方法
JPS6311595A (ja) * 1986-07-01 1988-01-19 Sumitomo Electric Ind Ltd 不純物の均一ド−ピング法
JPH0379318B2 (sr) * 1986-07-01 1991-12-18 Sumitomo Electric Industries
WO2014159879A1 (en) * 2013-03-14 2014-10-02 Sunedison, Inc. Czochralski crucible for controlling oxygen and related methods
CN105247114A (zh) * 2013-03-14 2016-01-13 爱迪生太阳能公司 用于控制氧的提拉坩埚和相关方法
US9863062B2 (en) 2013-03-14 2018-01-09 Corner Star Limited Czochralski crucible for controlling oxygen and related methods
TWI632256B (zh) * 2013-03-14 2018-08-11 香港商各星有限公司 用於控制氧之柴可斯基(czochralski)坩堝及相關方法
US10450670B2 (en) 2013-03-14 2019-10-22 Corner Star Limited Methods for growing a crystal ingot with reduced dislocations from a crucible

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