JPS4844585B1 - - Google Patents
Info
- Publication number
- JPS4844585B1 JPS4844585B1 JP2842269A JP2842269A JPS4844585B1 JP S4844585 B1 JPS4844585 B1 JP S4844585B1 JP 2842269 A JP2842269 A JP 2842269A JP 2842269 A JP2842269 A JP 2842269A JP S4844585 B1 JPS4844585 B1 JP S4844585B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2842269A JPS4844585B1 (ja) | 1969-04-12 | 1969-04-12 | |
| US24078A US3646527A (en) | 1969-04-12 | 1970-03-31 | Electronic memory circuit employing semiconductor memory elements and a method for writing to the memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2842269A JPS4844585B1 (ja) | 1969-04-12 | 1969-04-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS4844585B1 true JPS4844585B1 (ja) | 1973-12-25 |
Family
ID=12248205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2842269A Pending JPS4844585B1 (ja) | 1969-04-12 | 1969-04-12 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3646527A (ja) |
| JP (1) | JPS4844585B1 (ja) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3720925A (en) * | 1970-10-19 | 1973-03-13 | Rca Corp | Memory system using variable threshold transistors |
| US3832700A (en) * | 1973-04-24 | 1974-08-27 | Westinghouse Electric Corp | Ferroelectric memory device |
| US3925804A (en) * | 1974-01-29 | 1975-12-09 | Westinghouse Electric Corp | Structure of and the method of processing a semiconductor matrix or MNOS memory elements |
| US3987474A (en) * | 1975-01-23 | 1976-10-19 | Massachusetts Institute Of Technology | Non-volatile charge storage elements and an information storage apparatus employing such elements |
| US3992701A (en) * | 1975-04-10 | 1976-11-16 | International Business Machines Corporation | Non-volatile memory cell and array using substrate current |
| US4075653A (en) * | 1976-11-19 | 1978-02-21 | International Business Machines Corporation | Method for injecting charge in field effect devices |
| GB1602361A (en) * | 1977-02-21 | 1981-11-11 | Zaidan Hojin Handotai Kenkyu | Semiconductor memory devices |
| US4835587A (en) * | 1984-09-19 | 1989-05-30 | Fuji Electric Co., Ltd. | Semiconductor device for detecting radiation |
| KR940006708B1 (ko) * | 1989-01-26 | 1994-07-25 | 세이꼬 엡슨 가부시끼가이샤 | 반도체 장치의 제조 방법 |
| AU638812B2 (en) * | 1990-04-16 | 1993-07-08 | Digital Equipment Corporation | A method of operating a semiconductor device |
| JP3110262B2 (ja) * | 1993-11-15 | 2000-11-20 | 松下電器産業株式会社 | 半導体装置及び半導体装置のオペレーティング方法 |
| US6573167B2 (en) * | 2000-08-10 | 2003-06-03 | Texas Instruments Incorporated | Using a carbon film as an etch hardmask for hard-to-etch materials |
| JP3736740B2 (ja) * | 2000-12-12 | 2006-01-18 | シャープ株式会社 | 絶縁膜容量評価装置および絶縁膜容量評価方法 |
| US7227239B2 (en) * | 2004-09-23 | 2007-06-05 | International Business Machines Corporation | Resettable fuse device and method of fabricating the same |
| FR2929013B1 (fr) * | 2008-03-21 | 2010-05-21 | Commissariat Energie Atomique | Structure de test d'une capacite mos et procede de mesure d'une courbe de capacite en fonction de la tension associe |
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1969
- 1969-04-12 JP JP2842269A patent/JPS4844585B1/ja active Pending
-
1970
- 1970-03-31 US US24078A patent/US3646527A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3646527A (en) | 1972-02-29 |