JPH11354706A - Lead frame, semiconductor device using the same, and method of manufacturing the same - Google Patents

Abstract

(57) [Problem] To improve heat dissipation and reflow resistance in a semiconductor device. SOLUTION: A plurality of inner leads 1b are provided extending around a semiconductor chip 2 and electrically connected to pads 2a of the semiconductor chip 2 via bonding wires 4, and the semiconductor chip 2 is made of resin. A resin main body 3 formed by sealing, a plurality of outer leads 1c connected to the inner leads 1b and protruding from the resin main body 3 to the outside, and a chip supporting region 5a for supporting the semiconductor chip 2 are provided. Radiating plate inner portion 5b joined to outer lead 1c and radiating plate outer portion 5c joined to outer lead 1c
And a heat sink 5 made of
The heat generated from the QFP 8 is improved by releasing the heat generated from the outer lead 1c and radiating the heat from the outer heat radiating portion 5c to the outside.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing technique, and more particularly, to a technique which is effective when applied to improve heat dissipation of a semiconductor chip.

[0002]

2. Description of the Related Art The technology described below studies the present invention,
Upon completion, they were examined by the inventor, and the outline is as follows.

An IC manufactured for a specific user (Integr
Many ated circuits and ASICs have a high output type, and as an example of a high output type and resin-sealed IC, a surface-mount type multi-pin QFP (Quad Flat Pa
ckage) is known.

In this high-output type QFP, a large amount of heat is generated from the semiconductor chip, so that it is necessary to take measures for heat dissipation. Therefore, in order to improve the heat dissipation of the QFP, a relatively thin heat dissipation plate or heat dissipation fin called a heat spreader is attached.

[0005] As the QFP provided with the heat sink, there are a type having a built-in heat sink and a type having an exposed heat sink.

Incidentally, regarding the design technology of a semiconductor device using a lead frame, which is a resin-sealed type such as QFP,
For example, Nikkei BP, published on May 31, 1993, Susumu Kayama and Kunihiko Naruse (monitoring), "Practical Course VLSI Packaging Technology (Part 1)", pages 155 to 164, and further, heat dissipation technology for semiconductor devices For example, Nikkei B
Company P, published on May 31, 1993, and described in Susumu Kayama and Kunihiko Naruse (supervisors), "Practical Course VLSI Packaging Technology (Bottom)", pp. 200-203.

[0007]

However, in the QFP of the above-mentioned technology, the amount of heat generated from the semiconductor chip further increases due to the higher speed (higher frequency) of the operation of the semiconductor integrated circuit (for example, a 3 to 5 watt class). The above-mentioned heat dissipation measures have a problem in that heat dissipation is insufficient.

An object of the present invention is to provide a lead frame for improving heat dissipation and reflow resistance, a semiconductor device using the same, and a method of manufacturing the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0010]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, a lead frame according to the present invention includes a plurality of inner leads electrically connected to a surface electrode of a semiconductor chip, a plurality of outer leads connected to the inner leads and serving as external terminals of a semiconductor device; A chip support region for supporting a chip is provided, and the heat sink includes an inner part of a heat sink joined to the inner lead and an outer part of a heat sink joined to the outer lead.The semiconductor device is assembled. In this case, the heatsink outer portion protrudes from the resin main body of the semiconductor device and is arranged in contact with the outer lead.

Further, the semiconductor device according to the present invention includes a plurality of inner leads provided to extend around the semiconductor chip and electrically connected to the surface electrodes of the semiconductor chip.
A resin body formed by sealing the semiconductor chip with a resin, and outer leads that are a plurality of external terminals connected to the inner leads and projecting outside from the resin body,
A chip support region for supporting the semiconductor chip is provided, and a heat radiating plate including an inner radiating plate joined to the inner lead and an outer radiating plate joined to the outer lead is provided.

Accordingly, the heat sink inner portion is disposed in contact with the inner lead inside the resin main body portion, and the heat sink outer portion is disposed in contact with the outer lead, so that the heat generated from the semiconductor chip is transferred to the outer lead. In addition to the heat radiation from the outside, the heat can be released to the outside via the heat sink outer portion.

As a result, the heat dissipation of the resin-sealed semiconductor device can be improved.

Further, a method of manufacturing a semiconductor device according to the present invention
A step of preparing a lead frame in which the heatsink inner part of the heatsink composed of the heatsink inner part and the heatsink outer part is joined to the inner lead and the heatsink outer part is joined to the outer lead; and a chip of the heatsink Arranging the semiconductor chip in the support region, electrically connecting the surface lead of the semiconductor chip and the corresponding inner lead, and exposing the outer lead and the heat sink outer portion, A step of forming a resin body by resin sealing the semiconductor chip, the inner leads, and the inner portion of the heat sink; and a step of separating the plurality of outer leads projecting from the resin body from a frame of the lead frame. And a step of bending and forming the outer lead and the heat radiating plate outer portion.

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings.

FIG. 1 is a partial plan view showing an embodiment of the structure of the lead frame according to the present invention, FIG. 2 is an enlarged partial sectional view showing the structure of the lead frame shown in FIG. 1, and FIG. FIG. 4 is an enlarged cross-sectional view showing an example of the embodiment of the device structure, FIG. 4 is a plan view showing the structure of the semiconductor device shown in FIG. 3 through a resin main body, and FIG. 5 is a frame main body of the lead frame shown in FIG. 6, FIG. 6 is a partially enlarged plan view showing the structure of part A of the frame main body shown in FIG. 5, and FIG. 7 is a plan view showing the structure of a heat sink attached to the lead frame shown in FIG. FIG. 8 is an enlarged partial cross-sectional view showing an example of a state after die bonding in the method of manufacturing a semiconductor device of the present invention. FIG. 9 is a partial plan view showing an example of state after die bonding in the method of manufacturing a semiconductor device of the present invention.
FIG. 10 is an enlarged partial cross-sectional view showing one example of a state after wire bonding in the method for manufacturing a semiconductor device of the present invention.

The lead frame 1 of the present embodiment shown in FIG. 1 is used for a resin-sealed and surface-mounted semiconductor device. In this embodiment, as an example of this semiconductor device, FIG. The QFP 8 shown in FIG.

The semiconductor device is of a high output type (for example, a class of 3 to 5 watts, but is not limited to this wattage) and generates a large amount of heat from the semiconductor chip 2. ASIC (Applic
power ICs for specific applications (eg, peripherals of copiers and personal computers) called CPUs (Central Proc.
It is used for microcomputers having an essing unit) and a memory.

First, the structure of the lead frame 1 shown in FIG. 1 will be described with reference to FIGS. 1 to 7. A plurality of inner leads 1b electrically connected to the pads 2a (surface electrodes) of the semiconductor chip 2 will be described. A plurality of outer leads 1c connected to the inner leads 1b and serving as external terminals of the QFP 8 (semiconductor device); and a chip supporting region 5a for supporting the semiconductor chip 2, and a heat sink inner joined to the inner leads 1b. A heat radiating plate 5 (also referred to as a heat spreader) including a portion 5b and a heat radiating plate outer portion 5c joined to the outer lead 1c. It protrudes and is arranged in contact with the outer lead 1c.

That is, the lead frame 1 of the present embodiment shown in FIG. 1 has a frame body 1a shown in FIG. 5 provided with a plurality of inner leads 1b and a plurality of outer leads 1c connected thereto, and the frame body 1a. Insulation layer 6 on top
And a heat sink 5 shown in FIG.

The lead frame 1 of the present embodiment
Is used for the multi-pin QFP 8, and as shown in FIGS.
A total of 208 inner leads 1b and outer leads 1c integrally formed integrally with each other extend in the direction, and a frame portion 1f for supporting each outer lead 1c is formed.

The frame 1f is formed with a guide slot 1d and a positioning hole 1e for transporting the lead frame 1 during die bonding or wire bonding.

The material of the frame body 1a is, for example, a conductive material such as iron, copper, or an alloy of iron and nickel, and its thickness is, for example, about 0.1 to 0.15 mm. However, the material and the thickness are not limited to these.

As shown in FIG. 7, the heat radiating plate 5 is formed of a single plate material in which a heat radiating plate inner portion 5b and a heat radiating plate outer portion 5c are integrally formed. A chip supporting area 5a for supporting the chip 2 is provided.

Further, the heat radiating plate 5 is provided with four through-holes 5f at locations where they enter the chip support region 5a (here, locations where the side surfaces 2b of the semiconductor chip 2 extend).

The through holes 5f allow the sealing resin 7 to pass therethrough when sealing the resin, thereby improving the adhesion between the sealing resin 7 and the semiconductor chip 2. be able to.

Further, in the heat radiating plate 5, a plurality of through holes 5f are provided in a portion corresponding to a gate of a mold (not shown) at the time of resin sealing, a portion corresponding to the inner lead 1b, and the like. I have.

These through-holes 5f are for improving moldability during resin sealing.

The material of the heat radiating plate 5 is, for example, a plastic material such as a copper plate, and the thickness thereof is, for example, 0.1 m.
m, but the material and the thickness are not limited thereto.

The insulating layer 6 is, for example, a polyimide film sheet having a thermosetting or thermoplastic insulating adhesive formed on both front and back surfaces. As shown in FIGS. 1a and the inner lead 1b and the outer lead 1c of the heat sink 5 and the inner part 5b and the outer heat sink 5c of the heat sink 5, respectively. It is joined to the main body 1a.

That is, the heat radiating plate 5 is adhered to the frame main body 1a in a state where the heat radiating plate 5 is insulated from the frame main body 1a by the insulating layer 6, and the lead frame 1 shown in FIG. 1 is shown. .

The insulating layer 6 is not limited to a polyimide film sheet as long as it can insulate and join the frame main body 1a and the heat radiating plate 5.

Next, the configuration of the QFP 8 (semiconductor device) of the present embodiment shown in FIGS. 3 and 4 will be described.

FIG. 4 is a plan view of the QFP 8 as seen through the resin body 3 from above.

As shown in FIG. 4, each outer lead 1c projecting from the resin body 3 has a structure viewed from above.
Are in a state of being covered by the outer radiator plate 5c of the radiator plate 5.

The QFP 8 is a resin-encapsulated and surface-mounted multi-pin (here, 208-pin) type, and is manufactured using the lead frame 1 shown in FIG. Outer lead 1c and insulating layer 6
The heat sink outer part 5c joined through the resin body 3
And is formed in a gull wing shape by projecting in four directions.

The structure of the QFP 8 will be described.
A plurality of inner leads 1b provided to extend around the semiconductor chip 2 and electrically connected to pads 2a (surface electrodes) of the semiconductor chip 2 via bonding wires 4; A resin body 3 formed by sealing, and a resin body 3 connected to the inner lead 1b;
Outer leads 1c, which are a plurality of external terminals protruding to the outside, and a chip support region 5a for supporting the semiconductor chip 2.
And a radiating plate 5 composed of a radiating plate inner portion 5b joined to the inner lead 1b and a radiating plate outer portion 5c joined to the outer lead 1c.

That is, the outer radiator plate 5c of the radiator plate 5 joined to the inner lead 1b and the outer lead 1c via the insulating layer 6 projects from the resin body 3 along the outer lead 1c and is exposed to the outside. .

As shown in FIG. 3, the semiconductor chip 2 is fixed to the chip supporting region 5a of the heat sink 5 using a die bonding agent such as a silver paste 9.

As shown in FIG. 3, the semiconductor chip 2 supported by the chip supporting area 5a of the radiator plate 5 has the main lead 1c. The surface 2c is arranged facing the mounting surface side of the QFP 8, and is mounted face-down.

Therefore, the heat radiating plate outer portion 5c protruding from the resin main body 3 along the outer lead 1c is formed in a gull wing shape as shown in FIG. 3, similarly to the outer lead 1c. Part 5c
Are arranged outside the outer lead 1c.

As shown in FIG. 9, the heat radiating plate 5 is provided with four through holes 5f around the semiconductor chip 2 in the chip supporting region 5a, and the through holes 5f in the chip supporting region 5a are formed. The sealing resin 7 that has been hardened by passing is formed in close contact with the side surface 2 b of the semiconductor chip 2.

The sealing resin 7 is, for example, an epoxy-based thermosetting resin, and the resin main body 3 is formed by using the sealing resin 7 by a molding method.

The bonding wire 4 is, for example, a gold wire, but is not limited to this.

As a result, as shown in FIG. 3, the semiconductor chip 2, the wires 4, the heat sink inner portion 5b, and the inner leads 1b are embedded in the resin body 3.
As a result, the semiconductor chip 2 and the wires 4 are sealed and protected.

Next, a method of manufacturing the QFP 8 of the present embodiment will be described.

The method of manufacturing the QFP 8 is performed using the lead frame 1 shown in FIG.

First, the inner radiator plate 5b of the radiator plate 5 composed of the inner radiator plate 5b and the outer radiator plate 5c is joined to the inner lead 1b, and the outer radiator plate 5c is joined to the outer lead 1c in FIG. , A lead frame 1 shown in FIG. 2 is prepared.

That is, the lead frame 1 having the radiator plate 5 attached to the frame body 1a via the insulating layer 6 is prepared in advance.

The frame main body 1a and the radiator plate 5 may be carried in as separate components, and they may be bonded together via the insulating layer 6 later.

An example of a manufacturing procedure of the lead frame 1 at that time will be described. First, an insulating layer 6, that is, a polyimide film sheet with an adhesive is formed on the entire surface of the heat sink 5 to be joined to the inner lead 1 b and the outer lead 1 c. Is temporarily fixed.

The frame body 1a is formed by punching or etching a thin copper alloy plate or the like, and includes a plurality of inner leads 1b, an outer lead 1c integrally connected thereto, and an outer lead 1c. A supporting frame 1f, a guide elongated hole 1d, and a positioning hole 1e are formed.

Subsequently, the frame main body 1a and the heat sink 5 are thermocompression-bonded via the insulating layer 6, whereby the lead frame 1 shown in FIG. 1 can be manufactured.

Thereafter, as shown in FIG. 8, the semiconductor chip 2 is arranged in the chip supporting region 5a of the heat sink 5.

That is, die bonding is performed on the chip supporting surface 5d of the chip supporting region 5a of the heat radiating plate 5 by using a silver paste 9 as a die bonding agent.
Is fixed.

Thereafter, as shown in FIGS. 9 and 10, wire bonding is performed to form the pads 2a of the semiconductor chip 2.
The (surface electrode) and the corresponding inner lead 1b are electrically connected by bonding wires 4.

Then, the resin body 3 is formed by exposing the outer lead 1c and the heat radiating plate outer portion 5c, and sealing the semiconductor chip 2, the wire 4, the inner lead 1b, and the heat radiating plate inner portion 5b with resin. .

That is, resin sealing is performed.

When performing the resin sealing, the heat sink 5
By passing the sealing resin 7 through the through-hole 5f provided at a location corresponding to the gate of the molding die (not shown), the sealing resin 7 is substantially evenly distributed on both the front and back surfaces of the lead frame 1. Supply.

Thus, when the resin main body 3 is formed, the thickness of the front and rear sides of the frame main body 1a can be made substantially the same.

Further, when the sealing resin 7 is supplied, a plurality of through holes 5 provided at locations corresponding to the inner leads 1b are provided.
and the sealing resin 7 is supplied by passing the sealing resin 7 through four through-holes 5f provided in the portion that has entered the chip supporting region 5a.

As a result, the adhesion between the sealing resin 7 and the semiconductor chip 2 can be improved, and the moldability during resin sealing can be improved.

After completion of the resin sealing, the 208 outer leads 1c projecting from the resin main body 3 are separated from the frame 1f of the frame main body 1a of the lead frame 1 by cutting using a cutting mold (not shown) or the like. Further, the outer lead 1c and the heat sink outer portion 5c are bent and formed into a gull wing shape.

At this time, the outer lead 1c is formed in a gull wing shape, and the chip supporting region 5a of the heat sink 5 is formed.
The semiconductor chip 2 supported on the main surface of the semiconductor chip 2
8 (semiconductor device) is arranged facing the mounting surface side and face-down mounted.

Here, first, the semiconductor chip 2 is arranged downward (ie, toward the mounting surface side) (the heatsink outer portion 5).
c is directed upward), and in this state, the outer lead 1c is cut and formed from the frame portion 1f.
c and the radiating plate outer portion 5c are bent into a gull wing shape.

As a result, the QFP in which the heat radiating plate outer portion 5c is disposed outside the outer lead 1c as shown in FIG.
8 (semiconductor device) can be manufactured.

According to the lead frame 1 and the semiconductor device (QFP 8) using the same and the method of manufacturing the same according to the present embodiment, the following operational effects can be obtained.

That is, in the QFP 8, the heat sink inner part 5b of the heat sink 5 composed of the heat sink inner part 5b and the heat sink outer part 5c is joined to the inner lead 1b, and the heat sink outer part 5c is joined to the outer lead 1c. As a result, the heat sink inner portion 5b is disposed in contact with the inner lead 1b inside the resin body portion 3, and the heat sink outer portion 5c is disposed in contact with the outer lead 1c. Heat generated from the outer lead 1
In addition to releasing from c to the outside, it can be released to the outside via the heat sink outer portion 5c.

As a result, the heat dissipation of the resin-sealed QFP 8 (semiconductor device) can be improved.

Therefore, it becomes possible to mount a device (semiconductor chip 2) with a high heat radiation specification on the QFP 8.

Further, by improving heat dissipation,
Radiation fin 10 in QFP 8 with improved heat radiation
Since it is not necessary to attach the QFP 8 (see FIG. 13), the QFP 8 having improved heat dissipation can be made thinner.

As a result, the efficiency of space utilization on the mounting board on which the QFP 8 is mounted can be improved.

Further, a through hole 5f is provided in the chip supporting region 5a of the heat sink 5 and a sealing resin 7 cured through the through hole 5f is formed in close contact with the side surface 2b of the semiconductor chip 2. By doing so, the adhesion between the semiconductor chip 2 and the sealing resin 7 can be improved.

As a result, peeling of the semiconductor chip 2 from the heat sink 5 can be prevented, and the formation of cracks in the sealing resin 7 near the side surface 2b of the semiconductor chip 2 can be reduced.

Therefore, the reflow conditions for reflow when the QFP 8 is mounted on the mounting board can be broadened, whereby the reflow resistance of the QFP 8 can be improved.

Further, by providing a through hole 5f at a position corresponding to the gate of the mold at the time of resin sealing, the sealing resin 7 passes through the through hole 5f at the time of resin sealing. Since it flows almost evenly into the front and back surfaces of the lead frame 1, the moldability can be improved.

Further, by forming the outer leads 1c in a gull-wing shape and mounting the semiconductor chip 2 face down, the heat radiating plate outer portion 5c protruding from the resin body 3 is arranged outside the outer leads 1c. The outer portion 5c is exposed, so that the heat radiation effect of the heat radiation plate 5 can be further enhanced.

As a result, the allowable output number (wattage) of the semiconductor chip 2 mountable on the QFP 8 can be increased.

As described above, the invention made by the inventor has been specifically described based on the embodiments of the present invention. However, the present invention is not limited to the embodiments of the present invention, and does not depart from the gist of the invention. It is needless to say that various changes can be made.

For example, in the heat radiating plate 5 described in the above embodiment, the location and the number of the through holes 5f or the shape thereof are not limited to those shown in FIG.

As another embodiment of the QFP 8,
The structure shown in FIGS. 11 to 13 may be used.

Here, Q of the other embodiment shown in FIG.
FP8 adjusts the thickness of the resin main body 3 to the frame main body 1a.
In which the thickness of the resin body 3 on the side where the semiconductor chip 2 is not mounted (the above-mentioned upper side) is changed between the side (lower side) of the semiconductor chip 2 and the opposite side (upper side). It is. Thereby, the thickness of the resin main body 3 can be reduced to improve the heat radiation effect.

Further, the Q of the other embodiment shown in FIG.
The FP 8 has a structure in which the resin is sealed so that the surface opposite to the chip supporting surface 5 d of the heat radiating plate 5 is exposed to become an exposed surface 5 e when performing the resin sealing. Has the exposed surface 5e, as a result, heat can be radiated directly from the exposed surface 5e of the radiator plate 5.

The QF of another embodiment shown in FIG.
P8 forms an exposed surface 5e of the heat radiating plate 5 on the surface opposite to the chip supporting surface 5d of the heat radiating plate 5 when performing resin sealing, and further radiates heat to the exposed surface 5e. The fin 10 is provided.

Thus, heat can be further dissipated by the heat dissipating fins 10.

That is, the QFP 8 of another embodiment shown in FIGS. 11 to 13 has a structure capable of further improving the heat radiation.

In particular, in the QFP 8 provided with the heat radiation fins 10 shown in FIG. 13, the heat radiation can be greatly improved as compared with the QFP 8 shown in FIG.

Further, in the QFP 8 of the above embodiment and the other embodiments, the case where the semiconductor chip 2 is mounted face-down has been described, but the semiconductor chip 2 may be mounted face-up. .

However, when performing the face-up mounting, since the outer leads 1c are disposed outside the outer radiator plate 5c, the outer leads 1c and the outer radiator plate 5c are electrically connected to the mounting board. Must be bent into a J-lead shape.

FIG. 3, FIG. 11, FIG. 12 and FIG.
In the semiconductor device shown in FIG. 1, the case where the semiconductor device is the QFP 8 has been described. However, the semiconductor device is not limited to the QFP 8 and may be, for example, SOP ( Small Outline Package)
And QFJ (Quad Flat J-leaded Package).

[0092]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). In the semiconductor device, the heatsink inner portion of the heatsink is joined to the inner lead, and the heatsink outer portion is joined to the outer lead. It can be released to the outside via the heat sink outer part. As a result, the heat dissipation in the resin-sealed semiconductor device can be improved.

(2). According to the above (1), there is no need to attach a radiation fin in a semiconductor device having improved heat dissipation, so that the semiconductor device can be made thinner. As a result, the efficiency of space utilization on the mounting board on which the semiconductor device is mounted can be improved.

(3). A through hole is provided in the chip support region of the heat sink, and the sealing resin cured through the through hole is formed in close contact with the side surface of the semiconductor chip, so that the semiconductor chip and the heat sink can be separated from each other. Can be prevented,
Further, the formation of cracks in the sealing resin near the side surface of the semiconductor chip can be reduced. Therefore, the reflow conditions for reflow when the semiconductor device is mounted on the mounting board can be broadened, whereby the reflow resistance of the semiconductor device can be improved.

(4). By providing through holes in the radiator plate at locations corresponding to the gates of the mold at the time of resin sealing, the sealing resin can pass through these through holes evenly on the front and back sides of the lead frame during resin sealing. To flow in,
The moldability can be improved.

(5). By forming the outer leads in a gull wing shape and mounting the semiconductor chip face-down, the outer radiator plate protruding from the resin body is located outside the outer leads, so that the outer radiator plate is exposed, which allows The heat radiation effect by the plate can be further enhanced.

[Brief description of the drawings]

FIG. 1 is a partial plan view showing an example of an embodiment of the structure of a lead frame according to the present invention.

FIG. 2 is an enlarged partial sectional view showing the structure of the lead frame shown in FIG.

FIG. 3 is an enlarged sectional view showing an example of the embodiment of the structure of the semiconductor device of the present invention.

FIG. 4 is a plan view showing the structure of the semiconductor device shown in FIG. 3 through a resin body.

FIG. 5 is a partial plan view showing a structure of a frame main body of the lead frame shown in FIG. 1;

6 is a partially enlarged plan view showing a structure of a portion A of the frame main body shown in FIG.

FIG. 7 is a plan view showing a structure of a heat sink attached to the lead frame shown in FIG.

FIG. 8 is an enlarged partial cross-sectional view showing an example of a state after die bonding in the method for manufacturing a semiconductor device of the present invention.

FIG. 9 is a partial plan view showing an example of a state after die bonding in the method of manufacturing a semiconductor device according to the present invention.

FIG. 10 is an enlarged partial cross-sectional view showing one example of a state after wire bonding in a method for manufacturing a semiconductor device of the present invention.

FIG. 11 is an enlarged sectional view showing the structure of a semiconductor device according to another embodiment of the present invention.

FIG. 12 is an enlarged sectional view showing the structure of a semiconductor device according to another embodiment of the present invention.

FIG. 13 is an enlarged sectional view showing the structure of a semiconductor device according to another embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Lead frame 1a Frame main body 1b Inner lead 1c Outer lead 1d Guide long hole 1e Positioning hole 1f Frame 2 Semiconductor chip 2a Pad (surface electrode) 2b Side surface 2c Main surface 3 Resin main body 4 Wire 5 Heat sink 5a Chip support area 5b Heat radiation Plate inner part 5c Heat radiating plate outer part 5d Chip supporting surface 5e Exposed surface 5f Through hole 6 Insulating layer 7 Sealing resin 8 QFP (semiconductor device) 9 Silver paste 10 Radiating fin

Claims (9)

[Claims] 1. A lead frame used for a resin-encapsulated semiconductor device, comprising: a plurality of inner leads electrically connected to a surface electrode of a semiconductor chip; A plurality of outer leads serving as external terminals, and a radiator plate provided with a chip support region for supporting the semiconductor chip, and including a radiator plate inner portion joined to the inner leads and a radiator plate outer portion joined to the outer leads When the semiconductor device is assembled, the heatsink outer portion projects from the resin body of the semiconductor device,
A lead frame arranged in contact with the outer lead. 2. The lead frame according to claim 1, wherein a through hole is provided in said chip supporting region of said heat radiating plate. 3. A semiconductor device using the lead frame according to claim 1, wherein the semiconductor device is provided so as to extend around the semiconductor chip, and is electrically connected to a surface electrode of the semiconductor chip. A plurality of inner leads; a resin body formed by sealing the semiconductor chip with a resin; an outer lead being a plurality of external terminals connected to the inner leads and protruding outside from the resin body; and the semiconductor chip. A chip support region for supporting the heat sink, and a heat sink having an inner heat sink joined to the inner lead and an outer heat sink joined to the outer lead. 4. The semiconductor device according to claim 3, wherein a through hole is provided in said chip supporting region of said heat radiating plate, and sealing resin cured through said through hole is provided on a side surface of said semiconductor chip. A semiconductor device which is formed in close contact. 5. The semiconductor device according to claim 3, wherein said outer lead is formed in a gull-wing shape, and said semiconductor chip supported by said chip supporting region of said heat sink has a main surface. A semiconductor device which is arranged facing the mounting surface side of the semiconductor device and is mounted face-down. 6. The semiconductor device according to claim 3, wherein the exposed surface of the radiator plate is formed by resin sealing so that a surface of the radiator plate opposite to a chip supporting surface is exposed. A radiation fin provided on the exposed surface. 7. A method of manufacturing a resin-encapsulated semiconductor device, comprising joining a heatsink inner part of a heatsink composed of a heatsink inner part and a heatsink outer part to an inner lead, and A step of preparing a lead frame having an outer portion joined to an outer lead; a step of arranging a semiconductor chip in a chip support region of the heat sink; electrically connecting a surface electrode of the semiconductor chip and the corresponding inner lead to the surface electrode; Connecting, exposing the outer lead and the heat sink outer portion, and sealing the semiconductor chip, the inner lead, and the heat sink inner portion with a resin to form a resin main body, A step of separating the plurality of outer leads projecting from the main body from a frame of the lead frame; and bending the outer leads and the heat sink outer part. Forming a semiconductor device. 8. The method of manufacturing a semiconductor device according to claim 7, wherein, when the resin sealing is performed, the sealing resin is passed through a through hole provided in the chip supporting region of the heat sink. A method for manufacturing a semiconductor device, comprising performing resin sealing. 9. The method for manufacturing a semiconductor device according to claim 7, wherein the outer leads are formed in a gull-wing shape, and a main surface of the semiconductor chip supported by the chip supporting region of the heat sink is formed. A method of manufacturing a semiconductor device, comprising arranging the semiconductor device toward a mounting surface side and performing face-down mounting.