JPH11340517A - Semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To project the light emitted from the semiconductor light-emitting element of a semiconductor light-emitting device from a resin-encapsulated body with high luminance. SOLUTION: In a semiconductor light-emitting device, a reflector 11 having an inclined surface which surrounds a semiconductor light-emitting element 4 and reflects the light projected upon the inclined surface from the element 4 to a resin-encapsulated body 6 side is fixed to one main surface 1a of a substrate 1 and is embedded in the resin-encapsulated body 6. Since the light rays projected in the lateral direction from the element 4 are reflected upwards by the inclined surface of the reflector 11, the element 4 can emit light with high luminance by increasing the quantity of the light emitted upwards from the resin-encapsulated body 6, as compared with the conventional example.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device that emits light with high luminance from a resin sealing body.

[0002]

2. Description of the Related Art As shown in FIGS. 18 and 19, a conventional surface mount type light emitting diode device has one main surface (1).
a) an insulating substrate (1) in which an island wiring conductor (die pad) (2) and a terminal wiring conductor (bonding pad) (3) are separately formed; and a semiconductor fixed on the island wiring conductor (2). A light emitting element (light emitting diode chip) (4), a thin lead wire (5) for connecting an electrode formed on the upper surface of the semiconductor light emitting element (4) and a terminal wiring conductor (3), and one of a substrate (1); A light-transmitting resin sealing body (6) covering the island wiring conductor (2) and a part of the terminal wiring conductor (3) on the main surface (1a), the semiconductor light emitting element (4) and the fine lead wire (5); Consists of

[0003] The island wiring conductor (2) and the terminal wiring conductor (3) formed on one main surface (1a) of the substrate (1) extend downward along the end surfaces (1c) and (1d) of the substrate (1). And the tip side of the island wiring conductor (2) and the terminal wiring conductor (3) extend to the other main surface (1b) of the substrate (1) to form a connection electrode. Light emitted from the upper surface of the semiconductor light emitting element (4) is emitted to the outside through the resin sealing body (6). 18 and 19, the bottom surface of the substrate (1) can be surface-mounted on a circuit board or the like.

[0004]

In the light emitting diode device shown in FIGS. 18 and 19, light is irradiated from the side of the semiconductor light emitting element (4), and most of the light from the side is on the side of the resin sealing body (6). , The amount of light emitted from the semiconductor light emitting element (4) through the upper surface of the resin sealing body (6) to the outside of the resin sealing body (6) is relatively small, and the resin sealing is performed. Light could not be extracted with high luminance above the body (6). Therefore, an object of the present invention is to provide a semiconductor light emitting device that emits light with high luminance from a resin sealing body.
Another object of the present invention is to provide a semiconductor light emitting device that emits light with high luminance from a resin sealing body and can manufacture a semiconductor light emitting device at low cost and with high productivity.

[0005]

A semiconductor light emitting device (10) according to the present invention has an insulating property in which an island wiring conductor (2) and a terminal wiring conductor (3) are individually formed on one main surface (1a). Substrate (1) and island wiring conductor (2)
A semiconductor light emitting element (4) fixed thereon, electrodes formed on the semiconductor light emitting element (4), and terminal wiring conductors (3)
And a part of the island wiring conductor (2) and the terminal wiring conductor (3) on one main surface (1a) of the substrate (1), the semiconductor light emitting element (4) and the lead fine wire. (5) a light-transmitting or transparent resin sealing body (6) for covering the same. A reflector (11) surrounding the semiconductor light emitting element (4) and having an inclined surface (11c) for reflecting light emitted from the semiconductor light emitting element (4) toward the resin sealing body (6) is attached to the substrate (1). The reflector (11) is fixed to one main surface (1a), and is embedded in the resin sealing body (6).

[0006] Since the light emitted to the side from the semiconductor light emitting element (4) is reflected upward by the inclined surface (11c) of the reflector (11), the resin sealing body (6) is compared with the conventional semiconductor light emitting device. By increasing the amount of light going upward, light can be extracted with high luminance. Further, since the reflector (11) is pressed against the substrate (1) by the resin sealing body (6) which is in close contact with the substrate (1), the reflector (11) is also tightly adhered to the substrate (1), and the double sealing is performed. The structure prevents foreign substances such as moisture passing through both interfaces between the resin sealing body (6) and the substrate (1) and between the reflector (11) and the substrate (1) from entering the semiconductor light emitting element (4). .

In the embodiment of the present invention, the reflector (1
1) has a ring portion (11a) and flange portions (11b) provided at both ends of the outer peripheral surface of the ring portion (11a). The height of the ring portion (11a) is larger than the height of the semiconductor light emitting element (4), and the flange portion (11b) of the reflector (11) is located on the side surface (1e) of the substrate (1) from both ends of the ring portion (11a). It is stretched in the width direction of the substrate (1) to (1f). The reflector (11) is made of a thermosetting resin or a thermosetting resin containing white powder. Inclined surface (11
c) is a conical surface expanding in diameter toward the resin sealing body (6);
The semiconductor light emitting element (4) formed on a spherical surface, a paraboloid, or an approximate surface thereof, or a combination thereof, and disposed inside the inclined surface (11c) is surrounded by the inclined surface (11c).

The island wiring conductor (2) is provided on the substrate (1).
Island (2a) formed on one main surface (1a)
And the other main surface (1b) of the substrate (1) from one end of one main surface (1a) of the substrate (1) through one side surface (1c).
An island electrode portion (2b) formed to one end of the substrate and a narrow island wiring formed on one main surface (1a) of the substrate (1) and connecting the island (2a) and the island electrode portion (2b). (2c). The terminal wiring conductor (3) is connected to one main surface (1) of the substrate (1).
a) formed on the other main surface (1b) of the substrate (1) through the other side surface (1c) from the other end of one main surface (1a) of the substrate (1). A terminal electrode section (3c) formed to the other end; and a terminal wiring section (3b) formed on one main surface (1a) of the substrate (1) and connecting the terminal (3a) and the terminal electrode section (3c). ). The lower edge of the inclined surface (11c) is arranged inside the island (2a) of the island wiring conductor (2).

The ring portion (11a) has a diameter that overlaps the outer peripheral side of the island (2a) of the island wiring conductor (2), a part of the island wiring portion (2c) and a part of the terminal (3a). The island electrode portion (2b) is provided on the substrate (1).
Surface electrode portion (2d) formed on one main surface (1a)
And a back electrode portion (2e) formed on the other main surface (1b) of the substrate (1). Terminal electrode (3
c) shows the surface electrode portion (3d) formed on one main surface (1a) of the substrate (1) and the other main surface (1d) of the substrate (1).
b) formed on the back electrode portion (3e).
The semiconductor light emitting element (4) has an island (2a) of an island wiring conductor (2) arranged substantially at the center of the substrate (1).
The island (2a) has a larger area than the semiconductor light emitting element (4) in plan view. The terminal (3a) is connected to the island (2) of the island wiring conductor (2).
Since the ring portion (11a) is arranged to be offset from the center axis (8) in the width direction of the substrate (1) from the side of a) and the ring portion (11a) is formed in a ring shape, the length of the substrate (1) is relatively small. Make it smaller
The semiconductor light emitting device (10) can be manufactured in a small size. The lead wire (5) is an island (2
It is inclined with respect to the center line (8) of (a) and is connected between the semiconductor light emitting element (4) and the terminal (3a) across the reflector (11).

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor light emitting device according to the present invention applied to a surface mount type light emitting diode device will be described with reference to FIGS. 1 to 17, the same parts as those shown in FIGS. 18 and 19 are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIGS. 1 to 5, a light emitting diode device (10) according to the present embodiment includes a reflector (1) surrounding a semiconductor light emitting element (light emitting diode chip) 4.
18 differs from the light emitting diode device shown in FIGS. 18 and 19 in that 1) is formed on one main surface (1a) of the insulating substrate (1). The substrate (1) having a rectangular planar shape is a plate material formed by impregnating a resin with a glass cloth and having both main surfaces flat. The island wiring conductor (2) and the terminal wiring conductor (3) are formed by sequentially plating nickel and gold on a base material copper by a printing technique. The island wiring conductor (2) includes an island (2a) formed on one main surface (upper surface) (1a) of the substrate (1) and one from one end of one main surface (1a) of the substrate (1). An island electrode portion (2b) formed up to one end of the other main surface (lower surface) (1b) of the substrate (1) through the side surface (1c), and formed on one main surface (1a) of the substrate (1). And a narrow island wiring portion (2c) connecting the island (2a) and the island electrode portion (2b).

The terminal wiring conductor (3) is connected to the substrate (1)
Terminal (3a) formed on one main surface (1a) of the
And the other main surface (lower surface) of the substrate (1) from the other end of one main surface (1a) of the substrate (1) through the other side surface (1d).
The terminal electrode portion (3) formed up to the other end of (1b)
c) and a terminal wiring section (3b) formed on one main surface (1a) of the substrate (1) and connecting the terminal (3a) and the terminal electrode section (3c).
Island electrode part (2b) and terminal electrode part (3c)
Are surface electrode portions (2d) (3d) formed on one main surface (1a) of the substrate (1) and back electrode portions (2d) (3d) formed on the other main surface (1b) of the substrate (1), respectively. 2e) (3
e). One main surface (1a) of the substrate (1)
Surface electrode portions (2d) (3) formed over the entire width of
The inner ends (13) and (14) of d) are slightly shorter than the entire width of the substrate (1), and have a pair of side surfaces (1e) (1) of the substrate (1).
does not reach f). Similarly, as shown in FIG. 5, the inner ends (2f) and (3f) of the back electrode portions (2e) and (3e) formed on the other main surface (1b) of the substrate (1) are connected to the substrate (1). ) Is slightly shorter than the entire width and does not reach the pair of side surfaces (1e) and (1f) of the substrate (1).

As shown in FIG. 1, the island (2a) arranged substantially at the center of the substrate (1) has a larger area than the semiconductor light emitting element (4) in plan view, and has a terminal (3).
a) is arranged to be offset from the center axis (8) in the width direction of the substrate (1) from the side of the island (2a). For this reason, the fine lead wire (5) is connected between the semiconductor light emitting element (4) and the terminal (3a) while being inclined with respect to the center line (8). In the present embodiment, since the terminal (3a) is arranged offset from the central axis (8) and the ring portion (11a) is formed in an annular shape, the length of the substrate (1) in the longitudinal direction is made relatively small. Thus, the light emitting diode device (10) can be manufactured in a small size.

The semiconductor light emitting device (4) is made of gallium arsenide (G
aAs), gallium phosphide (GaP), gallium aluminum arsenide (GaAlAs) or the like. A bottom electrode (not shown) formed on the bottom surface of the semiconductor light emitting element (4) is fixed to substantially the center of the island (2a) by a conductive adhesive. An upper electrode (not shown) formed on the upper surface of the semiconductor light emitting element (4) is connected to the terminal (3a) by a thin lead wire (5) formed by a wire bonding method. The thin lead wire (5) is formed over the reflector (11).

As shown in FIG. 6, the reflector (11) has a ring (11a) and flanges (11b) provided at both ends of the outer peripheral surface of the ring (11a).
It is composed of a liquid crystal polymer containing white powder, an ABS resin, or the like. The lower edge of the inclined surface (11c) of the surface formed on the inner peripheral surface of the ring portion (11a) and having a diameter increasing upward, a conical surface, a spherical surface, a parabolic surface, a surface similar thereto, or a combination of these surfaces. The part is arranged inside the island (2a) as shown in FIG. The semiconductor light-emitting element (4) arranged inside the inclined surface (11c) has a ring portion (1).
1a). The height of the ring portion (11a) is larger than the height of the semiconductor light emitting device (4). Also,
As shown in FIG. 3, the ring portion (11a) has a diameter that overlaps the outer peripheral side of the island (2a) and a part of the island wiring portion (2c) and the terminal (3a). The flange portion (11b) of the reflector (11) has a ring portion (11).
The substrate (1) is extended in the lateral direction of the substrate (1) from both ends of (a) to the side surfaces (1e) and (1f). As described later, the reflector (1
1) In order to form the reflector (11) by an insert molding method in which a molten thermoplastic liquid resin is poured into a molding cavity (cavity) of a molding die having a shape complementary to the shape of the reflector (11) and cooled. , Reflector (11)
Can be satisfactorily fixed to one main surface (1a) of the substrate (1) without using an adhesive or the like when the resin constituting (1) is cooled.

The resin sealing body (6) has a pair of side surfaces (1c) and (1d) which are inclined at a fixed angle with respect to a pair of side surfaces (1c) and (1d) of the substrate (1) and which are disposed inside the electrode portions (2d) and (3d). Inclined surfaces (6a) (6b) and a pair of side surfaces (1e) of substrate (1)
A pair of upright surfaces (6c) forming substantially the same plane as (1f)
(6d) and an upper surface (6e) formed between a pair of upright surfaces (6c) and (6d) and a plane substantially perpendicular to the upright surfaces (6c) and (6d). As shown in FIG. 1, the resin sealing body (6) includes an island (2a) and a terminal (3).
a), the inner part of the island wiring part (2c) and the terminal wiring part (3b), the reflector (11), the semiconductor light emitting element (4) and the thin lead wire (5) are covered, but a pair of electrode parts (2d) ( 3d) and the outer portions of the wiring conductor (2c) and the terminal wiring portion (3b) are exposed from the resin sealing body (6). A pair of flanges (1) of the reflector (11)
The outer end surface (11d) of 1b) is exposed from the upright surfaces (6c) and (6d) of the resin sealing body (6) on the extension of the pair of side surfaces (1e) and (1f) of the substrate (1).

A light emitting diode device according to the present invention (10)
First, a substrate assembly (12) shown in FIG. 7 is prepared. As shown in FIGS. 7 and 8, the substrate assembly (1
2) a plate-like insulating substrate material (13) formed by impregnating a glass cloth with a resin, for example, in which a plurality of elongated through holes (16) are formed in parallel with each other, and one of the through holes (16) And an array of terminal conductors (14) formed on the substrate material (13) adjacent to the other side of each through hole (16). 15). In this embodiment, about 500 light emitting diode devices (10) can be obtained from one substrate material (13). The through hole (16) penetrates from one main surface (13a) of the substrate material (13) toward the other main surface (13b), and the third hole of the substrate material (13).
The first side surface (13c) of the substrate material (13) is parallel to the first side surface (13c) and the fourth side surface (not shown) of the first side (13c).
Extending toward a second side surface (not shown) parallel to the side surface (13c). As shown in FIG. 7, the substrate material (13)
Island conductor rows (14) and terminal conductor rows (15) between adjacent through holes (16) on one main surface (13a).
Are formed facing each other. In the present embodiment, the through-hole (16) has a long and narrow hole shape, but may be constituted by a plurality of circular through-holes (through-holes).

The island conductor array (14) is formed on one main surface (13a) of the substrate material (13), is formed relatively wide and has an approximately square planar shape, and an island (14a). One main surface (1) of the material (13)
3a) through the side surface of the through-hole (16) to the substrate material (1).
3) An island electrode portion (14b) formed up to the other main surface (13b), and an island (14a) and an island electrode portion (14b) formed on one main surface (13a) of the substrate material (13). And an island wiring portion (14c) having a relatively small width. The island (14a), the island wiring portion (14c) and the island electrode portion (14b) are the same as the island (2a), the island wiring portion (2c) and the island electrode of the completed light emitting diode device (10) shown in FIGS. Part (2b)
Becomes

The terminal conductor row (15) is formed on one main surface (13a) of the substrate material (13) and has a relatively wide and substantially rectangular planar shape.
5a) and a terminal electrode portion (15b) formed from one main surface (13a) of the substrate material (13) to the other main surface (13b) of the substrate material (13) through the side surface of the through hole (16). ) And one main surface (13) of the substrate material (13).
a) and a relatively narrow terminal wiring portion (15c) connecting the terminal (15a) and the terminal electrode portion (15b). Terminal (1
5a), the terminal wiring part (15c) and the terminal electrode part (15b) are the terminal (3a), the terminal wiring part (3b) and the terminal electrode part (10) of the completed light emitting diode device (10) shown in FIGS. 3c).

The island (14a) is formed on the substrate material (13) substantially in the middle of a pair of adjacent through holes (16), and the terminal (15a) is located at the center of the island (14a) and the island wiring portion (14c). It is formed shifted to one side of the line. The island electrode portion (14b) and the terminal electrode portion (15b) extend from one main surface of the substrate material (13) through the side wall of the through hole (16) to the other main surface of the substrate material (13), On the side wall of the through hole (16), the island electrode portion (14b) and the terminal electrode portion (15b) are continuous, and the island conductor row (14) and the terminal conductor row (15) are integrated.

Next, the substrate assembly (12) is mounted on a molding die (17) used for insert molding shown in FIG. The molding die (17) is composed of an upper die (18) having a concave portion (18a) and a lower die (19), and one of the upper die (18) and the lower die (19) is a movable die. And the other is fixed. When the upper die (18) and the lower die (19) are closed, the same number of cavities (molding cavities) as the islands (14a) of the substrate material (13) are formed in the molding die (17) by the concave portions (18a). (20) is formed. Each cavity (20) has a plurality of reflector forming parts (20a) having a shape complementary to the reflector (11) and a plurality of connecting parts (20b) connecting adjacent reflector forming parts (20a). One gate (resin injection port) (21) connected to the upper surface of (20) is formed in the upper die (18).

When the reflector (11) is inserted into the substrate material (13), as shown in FIG. 9, the substrate material is placed between the upper die (18) and the lower die (19) of the molding die (17). (13) is sandwiched and arranged in a molding die (17). At this time, one main surface (13) of the substrate material (13) is
a) and a concave portion (18a) of the upper die (18), a cavity (20) is formed, and an island (14a) provided on one main surface (13a) of the substrate material (13) is formed by an upper die (14). Abuts on the bottom surface of the conical projection (18b) formed in 18). However, conical projections (18) are provided on the upper part of the island (14a) facing the gate (21) so that the resin can be smoothly injected into the cavity (20).
Since b) cannot be provided, the reflector (11)
Are not formed, and the island (14a) is completely covered with the resin.

Next, a fluid resin is injected into the cavity (20) through the gate (21). Cavities (2
The fluid resin injected into the mold (0) is filled with a molding die (1).
After being heated to a predetermined temperature or more in 7), it is cooled and hardened, and adheres closely to one main surface (13a) of the substrate material (13). As a result, as shown in FIGS. 10 and 11, the resin in the cavity (20) is cured and the substrate material (13) is cured.
Adjacent to one another on one main surface (13a) of the island (14).
A large number of reflector arrays (22) can be simultaneously formed substantially perpendicularly to the island wiring portion (14c) and the terminal wiring portion (15c) along a). A reflector (11) is formed corresponding to each island (14a) of the substrate material (13), and the reflectors (11) adjacent in the length direction of the through hole (16) are connected to each other by a connecting portion (23). The reflector array (22) is formed, but the width of the connecting portion (23) is smaller than the diameter of the reflector (11).

As shown in FIG. 10, the reflector (11)
Has an annular planar shape having an inner wall on which an inclined surface (11c) is formed. The reflector array (22) covers the outer peripheral side of the island (14a) and the tip of the terminal (15a), but the center of the island (14a) and most of the terminal wiring portion (15c) are the reflector array (22). It is not covered and exposed. In the present embodiment, the reflector array (22) is formed by insert molding using a thermo-retinable resin, but is formed by insert molding (transfer molding) using a thermosetting resin such as an epoxy resin. You may.

Subsequently, as shown in FIGS. 11 and 12,
Island (14a) exposed in reflector (11)
The semiconductor light emitting device (4) is fixed to the semiconductor light emitting device (4) by a known die bonding method, and an electrode (not shown) formed on the upper surface of the semiconductor light emitting device (4) using a wire bonding method.
In order to connect the lead wire (5) between the terminal (15a) and the terminal (15a), the lead wire (5) passes above the reflector (11) and is connected to the electrode on the upper surface of the semiconductor light emitting element (4) and the terminal (15a). Are electrically connected. In the present embodiment, the height of the reflector (11) is larger than the height of the semiconductor light emitting element (4). However, both heights are almost equal or the height of the reflector array (22) is higher than that of the semiconductor light emitting element (4). It may be slightly lower.

Thereafter, as shown in FIG.
4) A transfer mold (26) including a lower mold (25) was prepared, and a reflector array (22) was formed between the upper mold (24) and the lower mold (25). The substrate material (13) is sandwiched. When the upper mold (24) and the lower mold (25) are closed, the concave portion (24a) of the upper mold (24) is closed.
A cavity (28) having a shape complementary to the resin-sealed array (30) is provided in the molding die (26) between the resin mold (26) and the one main surface (13a) of the substrate material (13).
At the end of a) runners (2) leading to the gate (29)
7) is formed. When the fluidized resin is injected into the cavity (28) through the runner (27) and the plurality of gates (29) by a well-known transfer molding method, the resin injected into the cavity (28) is heated to a predetermined temperature or higher. 14 and 16, the plurality of light-transmissive resin sealing arrays (30) shown in FIGS.
3) is formed on one main surface (13a).

As shown in FIG. 14, a resin-sealed array (3
0) are formed in a ridge shape corresponding to the islands (14a) of the substrate material (13), and each resin sealing array (30) covers the reflector array (22). Finally, as shown in FIG. 14, the substrate material (13) and the resin sealing array (3
0) to cut at a position between the connecting portion (23) and the adjacent along line (L ₂₎ perpendicular to the line (L ₁₎ in a plan view reflector (11). Thereby, the individualized light emitting diode device (10) shown in FIGS. 1 to 5 is obtained.

The light emitting diode device (10) of this embodiment has the following effects. Since the light emitted to the side from the semiconductor light emitting element (4) is reflected upward by the inclined surface (11c) of the reflector (11), the upward light amount of the resin sealing body (6) is increased as compared with the conventional example. As a result, light can be extracted with high luminance. The size of the light emitting device can be reduced by reducing the length of the substrate (1). Since the reflector (11) is pressed against the substrate (1) by the resin sealing body (6) that adheres well to the substrate (1), the reflector (11) adheres well to the substrate (1), and both interfaces are formed. Foreign matter such as moisture passing through the space can be prevented. Since a plurality of elements provided with the reflector (11) can be formed simultaneously by insert molding, a high-luminance semiconductor light emitting element can be obtained with high productivity.

[0029]

As described above, according to the present invention, it is possible to obtain a semiconductor light emitting device in which a reflector is disposed on the upper surface of an insulating substrate and emits light with high luminance from the upper surface of the resin sealing body. And with good productivity.

[Brief description of the drawings]

FIG. 1 is a perspective view of a semiconductor light emitting device according to the present invention applied to a light emitting diode device.

FIG. 2 is a sectional view of a semiconductor light emitting device according to the present invention.

FIG. 3 is a plan view of a semiconductor light emitting device according to the present invention.

FIG. 4 is a side view of a semiconductor light emitting device according to the present invention.

FIG. 5 is a bottom view of the semiconductor light emitting device according to the present invention.

FIG. 6 is a perspective view of a reflector.

FIG. 7 is a plan view of a substrate material used for manufacturing a semiconductor light emitting device according to the present invention.

8 is a sectional view taken along the line VII-VII in FIG. 7;

FIG. 9 is a sectional view showing a state in which the substrate material is mounted on a molding die.

FIG. 10 is a sectional view of a substrate material on which a plurality of reflector arrays are formed.

FIG. 11 is a plan view of a substrate material subjected to die bonding and wire bonding.

FIG. 12 is a sectional view taken along the line XI-XI in FIG. 11;

FIG. 13 is a sectional view showing a state in which the substrate material is further mounted on a molding die.

FIG. 14 is a sectional view of a substrate material on which a sealing resin array is formed.

FIG. 15 is a sectional view taken along lines XIV-XIV in FIG. 14;

FIG. 16 is a side view of FIG. 14;

FIG. 17 is a perspective view showing another embodiment of the semiconductor light emitting device according to the present invention.

FIG. 18 is a perspective view of a conventional semiconductor light emitting device.

FIG. 19 is a side view of a conventional semiconductor light emitting device.

[Explanation of symbols]

(1) ··· Substrate, (1a) ··· One main surface, (1
b) the other main surface, (1c) the side surface, (1e)
(1f) ··· Side view (2) ··· Island wiring conductor
(2a) island, (2b) island electrode section, (2c) island wiring section, (2d)
..Surface electrode, (2e) .Back electrode, (3)
..Terminal wiring conductors (3a) .Terminals
(3b) ··· Terminal wiring section, (3c) ··· Terminal electrode section, (3d) ··· Surface electrode section, (3e)
..Back electrode portions, (4) .. Semiconductor light emitting devices,
(5) ··· Lead thin wire, (6) · · · Resin sealed body,
(8) · · · central axis, (10) · · · LED device (semiconductor light emitting device), (11) · · reflector,
(11a) ··· Ring, (11b) ··· Flange, (11c) ··· Slope, (12) ··· Substrate assembly, (13) ··· Substrate material, (13a) ··· One main surface , (13b) ... the other main surface, (13c) ...
The first aspect, (13d) ··· The third aspect, (14)
..Island conductor rows, (14a).
(14b)-Island electrode part, (14c)-
Island wiring section, (15) terminal row,
(15a) terminal, (15b) terminal electrode part, (15c) terminal wiring part, (1)
6) ··· Through hole, (17) ··· Mold for molding, (1
8) ··· Upper die, (18a) ··· Recess, (18b) ·
· Projection, (19) · · · Lower mold, (20) · · · Cavity, (20a) · · · Reflector forming part, (20b) ·
・ Connecting part, (21) ・ ・ Gate, (22) ・ ・ Reflector array, (23) ・ ・ Connecting part, (26) ・ ・
Mold, (28) Cavity, (30)
Resin-sealed array, (L ₁ ) (L ₂ ) line,

Claims (15)

[Claims] 1. An insulating substrate (1) having an island wiring conductor (2) and a terminal wiring conductor (3) individually formed on one main surface (1a); A semiconductor light-emitting element (4) fixed thereto, a lead wire (5) for connecting an electrode formed on the semiconductor light-emitting element (4) to the terminal wiring conductor (3), and one of the substrates (1). A light-transmitting or transparent resin sealing body (6) that covers the island wiring conductor (2) and a part of the terminal wiring conductor (3) on the main surface (1a), the semiconductor light emitting element (4) and the fine lead wire (5). ), The inclined surface (11c) surrounding the semiconductor light emitting element (4) and reflecting light emitted from the semiconductor light emitting element (4) toward the resin sealing body (6). A reflector (11) having A semiconductor light emitting device fixed to one main surface (1a) of (1), wherein the reflector (11) is embedded in the resin sealing body (6). 2. The reflector (11) includes a ring portion (1).
2. The semiconductor light emitting device according to claim 1, comprising: 1a); and flange portions (11b) provided at both ends of an outer peripheral surface of the ring portion (11a). 3. A flange (11b) of the reflector (11) extends in a width direction of the substrate (1) from both ends of the ring (11a) to side surfaces (1e) and (1f) of the substrate (1). The semiconductor light emitting device according to claim 1. 4. The semiconductor light emitting device according to claim 2, wherein the height of the ring portion is greater than the height of the semiconductor light emitting element. 5. The reflector (11) is made of a thermosetting resin or a thermosetting resin containing white powder.
The semiconductor light emitting device according to claim 1. 6. The inclined surface (11c) is formed as a conical surface, a spherical surface, a parabolic surface, an approximate surface thereof, or a combination thereof, the diameter of which increases toward the resin sealing body (6).
The semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting element (4) disposed inside the inclined surface (11c) is surrounded by the inclined surface (11c). 7. The island wiring conductor (2) includes an island (2a) formed on one main surface (1a) of the substrate (1) and one main surface (1a) of the substrate (1). And an island electrode portion (2b) formed from one end of the substrate (1c) to one end of the other main surface (1b) of the substrate (1) through one side surface (1c), and one main surface (1) of the substrate (1). 1a)
And a narrow island wiring portion (2c) connecting the island (2a) and the island electrode portion (2b).
2. The semiconductor light emitting device according to claim 1, comprising: 8. The terminal wiring conductor (3) includes a terminal (3a) formed on one main surface (1a) of the substrate (1) and one main surface (1a) of the substrate (1). A terminal electrode portion (3c) formed from the other end of the substrate (1c) through the other side surface (1c) to the other end of the other main surface (1b) of the substrate (1); Surface (1a)
2. The semiconductor light emitting device according to claim 1, further comprising: a terminal wiring portion (3 b) formed on the terminal and connecting the terminal (3 a) and the terminal electrode portion (3 c). 9. The semiconductor light emitting device according to claim 7, wherein a lower edge of said inclined surface is disposed inside an island of said island wiring conductor. 10. The reflector (11) has a ring (11a) and flanges (11b) provided at both ends of an outer peripheral surface of the ring (11a), and the ring (11a) is 8. The semiconductor light emitting device according to claim 7, wherein the diameter of the island wiring conductor (2) is such that the outer circumference of the island (2a) overlaps part of the island wiring portion (2c) and the terminal (3a). 11. The island electrode portion (2b) includes a surface electrode portion (2d) formed on one main surface (1a) of the substrate (1) and the other main surface (2) of the substrate (1). 1b)
8. The semiconductor light emitting device according to claim 7, further comprising a back electrode portion (2e) formed on the substrate. 12. The terminal electrode section (3c) includes a surface electrode section (3d) formed on one main surface (1a) of the substrate (1) and the other main surface (3) of the substrate (1). 1b)
9. The semiconductor light emitting device according to claim 8, further comprising: a back electrode portion formed on said substrate. 13. The semiconductor light emitting device (4) is fixed to an island (2a) of the island wiring conductor (2) arranged substantially at the center of the substrate (1), and the island (2a) is a flat surface. The semiconductor light emitting device (4)
6. The semiconductor light emitting device according to claim 5, having a larger area. 14. The terminal (3a) is displaced from a side of an island (2a) of the island wiring conductor (2) with respect to a center axis (8) in a width direction of the substrate (1). Item 7. A semiconductor light emitting device according to item 6. 15. The semiconductor light emitting element (4), wherein the thin lead wire (5) is inclined with respect to a center line (8) of the island (2a) in plan view and straddles the reflector (11). The semiconductor light emitting device according to claim 5, wherein the semiconductor light emitting device is connected between the terminal and the terminal (3a).