JPH11330072A - Semiconductor device and mounted body thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To avoid breaking elements, wirings, etc., even when the wire bonding is used and avoid damaging when mounting by providing at least one protective member between a terminal electrode and element and setting so as not to mutually bring into contact the terminal electrode, protective member and element. SOLUTION: This semiconductor device 3 has bump electrodes 4 on terminal electrodes 5 and contains protective members 1 and electrodes 2, the protective member 1 is of the same material or harder than that of the terminal electrode 5, at least one element 2 is at a region directly beneath the terminal electrode 5, at least one protective member 1 is disposed between the terminal electrode 5 and an element 2, the protective member 1, the terminal electrode 5 and the element 2 are not brought into contact mutually, the bump electrode 4 is formed by the wire bonding or plating method, the terminal electrode 5 is mainly made of Al, and the protective member 1 suppresses the shocks at bonding or mounting.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a pad electrode (terminal electrode) on an element or a wiring, and to a package using such a semiconductor device.

[0002]

2. Description of the Related Art With miniaturization and high performance of portable electronic devices, miniaturization and high performance of semiconductor devices and the like are increasingly required. Therefore, the number of terminal pins increases, and it is necessary to reduce the pitch or arrange the areas. However, there is a limit to the narrow pitch, and it is becoming important to provide a pad electrode on an element or a wiring for mounting. This technology is known as C4 (Controlled Collaps Chip) using solder bumps developed by IBM.
Connection) (refer to “Electronic Packaging Technology”, August issue (1996), pp. 78 to P8).
3).

FIG. 17 is a schematic sectional view of the connection structure. As shown in FIG. 17, a pad electrode 107 made of aluminum and a glass protective film 105 are formed on a SiO ₂ film 106 on the surface of an IC chip. Since a surface of the pad electrode 107 made of aluminum is provided with an aluminum oxide film, a metal film called a barrier metal is formed by vacuum deposition after performing a process of removing the oxide film. Specifically, a Cr layer 104, a Cr-Cu layer 103, and a Cu-Sn intermetallic compound layer 102 are formed in this order. Further, a solder bump 101 is formed on this surface. The solder bump 101 has a weight ratio of Pb: Sn of 95: 5. Thus, when this is brought into contact with the terminal electrode of the circuit board and reflowed, the solder melts and the connection is completed.

In addition, there is a structure in which a barrier metal is formed in addition to solder, and then an Au plating bump is formed.

In these prior arts, even if pad electrodes are provided on the active elements of the IC chip and the protruding electrodes are formed thereon, it can be expected that the active elements of the IC chip will not be damaged. However, since all of these techniques are subjected to plating or treatments associated therewith, there are always problems of high cost related to plating equipment, waste liquid treatment, cleaning treatment, etc., or environmental problems. In addition, when performing electroplating, there is a problem of how to secure an electrode for flowing a current in an increasingly miniaturized circuit. Since it is very difficult to make the uniformity, the reliability of the mounted body is concerned.

[0006]

The mounting by connection in the area arrangement is based on the premise that a pad electrode (terminal electrode) is provided and mounted on an element or a wiring. Therefore, the pad electrode provided on the semiconductor device side is mounted. If the pressure is extremely high when forming the protruding electrode on the mounting or mounting, the element or the wiring is broken, the insulating layer is cracked, and the current leaks between the wiring and the wiring. There is a risk.
For this reason, in the prior art in which area connection is possible, a mounting technique mainly using a plated bump is used.
However, it can be said that the plating technique is an expensive mounting technique because of the extremely high required equipment costs and environmental problems such as waste liquid treatment and cleaning, as described above. Also,
Although it depends on the plating method, in the case of electrolytic or electroless plating, the stability of the formed protruding electrodes (bumps) still has a problem.

Further, in the technique using the wire bonding method, there is a concern that an impact load at the time of bonding may damage elements, wirings, and the like, and it has not been established.

Therefore, the present invention does not damage elements and wiring even when a low-cost wire bonding method is used, and does not damage elements and wiring when forming or mounting a protruding electrode. It is an object to provide a semiconductor device and a mounted body using such a semiconductor device.

[0009]

Means for Solving the Problems The inventors of the present invention provide a protective member below the pad electrode or separate the pad electrode from the element or the wiring by a certain distance or more to reduce the shock due to bonding or mounting load. The present inventors have found that they can be mounted without destroying elements and the like, and have completed the present invention.

That is, a semiconductor device according to the present invention is a semiconductor device having a terminal electrode, a protruding electrode formed on the terminal electrode as required, and a protective member, wherein elements and / or wiring in the semiconductor device are provided. Is below the terminal electrode,
At least one protection member is provided between the terminal electrode and an element and / or a wiring in the semiconductor device.

A semiconductor device according to the present invention is a semiconductor device having a terminal electrode and a projection electrode formed on the terminal electrode as needed, wherein the element and / or wiring in the semiconductor device is Under the terminal electrode, a distance between the terminal electrode and an element and / or wiring in the semiconductor device is at least 0.5 μm or more. Further, a package according to the present invention is obtained by mounting the above semiconductor device via a bonding layer, a wire, or a lead.

With the above configuration, the present invention has the following effects. One is to provide a protective member below the terminal electrode of the semiconductor device, or to provide a predetermined distance or more between the terminal electrode and an element and / or wiring in the semiconductor device to reduce the shock at the time of bonding. This can prevent damage to elements, wirings, and the like existing thereunder. Secondly, it is possible to bond to a terminal electrode on an active element, a wiring, or the like by using a low-cost wire bonding method that does not require a cleaning process and is environmentally friendly. Third, since the semiconductor device can be bonded to a terminal electrode provided on an element, a chip internal wiring, or the like, the semiconductor device can be made smaller than before. Further, also in terms of structure, since it is not necessary to draw the wiring around the periphery, it is possible to obtain a high-performance device at low cost. Fourth, even in a mounting mode using a bump electrode of plating other than solder, mounting with terminal electrodes provided on the element or wiring becomes possible.

In the above, the protruding electrodes are formed by using a wire bonding method, and Au, Al, Pd, Pb,
It may contain at least one of Sn, Cu, In, Bi, Ti, Ni or an alloy thereof.
Alternatively, Au, Al, P formed using a plating method
It may include at least one of d, Cu, Ni, Ti, Cr, Ag or an alloy thereof. Alternatively, Ag, Pd, Pt, C formed using a printing method
u, Ni, Pb, Sn, Bi, or at least one of these alloys.

In the above, the bonding layer can be formed using at least one of a conductive adhesive, an anisotropic conductive adhesive, an anisotropic conductive film, and solder.

In the above, it is preferable that the protection member is made of the same material as or a material harder than the terminal electrode of the semiconductor device. This is because the shock at the time of bonding or mounting is further reduced.

In the above structure, the wires or leads are made of Au, Al, Pd, Pb, Sn, Cu, In, B
It can be formed using at least one of i, Ti, Ni or an alloy thereof.

[0017]

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the embodiments specifically described below.

FIG. 1 is a schematic sectional view of a semiconductor device according to a first embodiment of the present invention.

As shown in the figure, in the semiconductor device 3 of the present embodiment, a protruding electrode 4 is formed on a terminal electrode 5,
The element 2 in the semiconductor device is below the terminal electrode 5 and has a protective member 1 between the terminal electrode 5 and the element 2 in the semiconductor device.

The protruding electrode 4 is formed by a wire bonding method or a plating method (in the case of plating, the material is other than solder). In FIG.
Step projections are acceptable. The protruding electrode 4 is formed of, for example, Au, and a protruding electrode using a solder wire is also possible.

The terminal electrode 5 is mainly made of aluminum, and the protective member 1 is preferably made of a material harder than the terminal electrode 5 such as Ti or W in order to suppress an impact at the time of bonding or mounting. The protection member 1 can be formed in the same manner as the formation of the wiring at the time of the diffusion step, similarly to the wiring in the semiconductor device. An element refers to, for example, an active element such as a transistor or a passive element such as a resistor.

FIG. 2 is a sectional view of a mounted body in which the semiconductor device 3 shown in FIG. 1 is mounted on a circuit board 10 having input / output terminal electrodes 8 via a conductive adhesive as a bonding layer 9. is there.

The bonding layer 9 is not limited to a conductive adhesive, but may be a solder, an anisotropic conductive adhesive, or an anisotropic conductive film. The conductive filler contained in the conductive adhesive and the anisotropic conductive adhesive is not problematic as long as it is a conductive filler such as Ag, Cu, and Ni. In the case of an anisotropic conductive film, for example, Ni particles or N
Those coated with i can be used. When the conductive adhesive and the anisotropic conductive adhesive are used, it is desirable that the gap between the semiconductor device and the circuit board is sealed with a resin. However, the resin may be sealed so as to surround at least the periphery of the joint. This resin sealing further improves the reliability of the joint. As the resin, an epoxy resin-based resin and a phenol resin or an acid anhydride as a curing agent can be used.

(Second Embodiment) FIG. 3 is a schematic sectional view of a semiconductor device according to a second embodiment of the present invention.

As shown in the figure, in the semiconductor device 3 of the present embodiment, a protruding electrode 4 is formed on a terminal electrode 5,
The wiring 6 in the semiconductor device is below the terminal electrode 5 and has the protection member 1 between the terminal electrode 5 and the wiring 6 in the semiconductor device.

The protruding electrode 4 is formed by using a wire bonding method or a plating method (in the case of plating, the material is other than solder). In FIG.
Step projections are acceptable. The protruding electrode 4 is formed of, for example, Au, and a protruding electrode using a solder wire is also possible.

The terminal electrode 5 is mainly made of aluminum, and the protective member 1 is desirably made of a material harder than the terminal electrode 5, such as Ti or W, in order to suppress an impact during bonding or mounting. The protection member 1 can be formed in the same manner as the formation of the wiring at the time of the diffusion step, similarly to the wiring in the semiconductor device. For example, aluminum can be used for the wiring 6.

FIG. 4 is a sectional view of a mounted body in which the semiconductor device 3 shown in FIG. 3 is mounted on a circuit board 10 having input / output terminal electrodes 8 via a conductive adhesive as a bonding layer 9. is there.

The bonding layer 9 is not limited to a conductive adhesive, but may be a solder, an anisotropic conductive adhesive, or an anisotropic conductive film. The conductive filler contained in the conductive adhesive and the anisotropic conductive adhesive is not problematic as long as it is a conductive filler such as Ag, Cu, and Ni. In the case of an anisotropic conductive film, for example, Ni particles or N
Those coated with i can be used. When the conductive adhesive and the anisotropic conductive adhesive are used, it is desirable that the gap between the semiconductor device and the circuit board is sealed with a resin. However, the resin may be sealed so as to surround at least the periphery of the joint. This resin sealing further improves the reliability of the joint. As the resin, an epoxy resin-based resin and a phenol resin or an acid anhydride as a curing agent can be used.

FIG. 5 is a schematic sectional view of a semiconductor device according to a third embodiment of the present invention.

As shown in the figure, in the semiconductor device 23 of the present embodiment, the protruding electrode 24 is formed on the terminal electrode 25, and the element 22 in the semiconductor device exists below the terminal electrode 25. The distance D between the semiconductor device 25 and the element 22 in the semiconductor device is at least 0.5 μm or more.

By separating the element 22 from the terminal electrode 25 by 0.5 μm or more, the propagation of an impact due to bonding or mounting load can be reduced, and the characteristic deterioration of the element can be prevented.

The protruding electrode 24 is formed by using a wire bonding method or a plating method (in the case of plating, the material is other than solder).
One-step projection is acceptable. The protruding electrode 24 is, for example, A
u, and a protruding electrode using a solder wire is also possible.

The terminal electrode 25 is mainly made of aluminum. An element refers to, for example, an active element such as a transistor or a passive element such as a resistor.

FIG. 6 shows that the semiconductor device 23 shown in FIG.
The bonding layer 2 is provided on the circuit board 20 having the input / output terminal electrodes 28.
9 is a cross-sectional view of a mounting body mounted via a conductive adhesive No. 9; FIG.

The bonding layer 29 is not limited to a conductive adhesive, but may be a solder, an anisotropic conductive adhesive, or an anisotropic conductive film. The conductive filler contained in the conductive adhesive and the anisotropic conductive adhesive is not problematic as long as it is a conductive filler such as Ag, Cu, and Ni. In the case of an anisotropic conductive film, for example, Ni particles or N
Those coated with i can be used. When the conductive adhesive and the anisotropic conductive adhesive are used, it is desirable that the gap between the semiconductor device and the circuit board is sealed with a resin. However, the resin may be sealed so as to surround at least the periphery of the joint. This resin sealing further improves the reliability of the joint. As the resin, an epoxy resin-based resin and a phenol resin or an acid anhydride as a curing agent can be used.

FIG. 7 is a schematic sectional view of a semiconductor device according to a fourth embodiment of the present invention.

As shown in the figure, in the semiconductor device 23 of the present embodiment, a protruding electrode 24 is formed on a terminal electrode 25, and a wiring 26 in the semiconductor device exists below the terminal electrode 25. The distance D between the wiring 25 and the wiring 22 in the semiconductor device is at least 0.5 μm or more.

By separating the wiring 26 and the terminal electrode 25 by 0.5 μm or more, propagation of an impact due to bonding or mounting load can be reduced, and deterioration of wiring characteristics can be prevented.

The protruding electrode 24 is formed by using a wire bonding method or a plating method (in the case of plating, the material is not solder).
One-step projection is acceptable. The protruding electrode 24 is, for example, A
u, and a protruding electrode using a solder wire is also possible.

The terminal electrode 25 is mainly made of aluminum. Aluminum can be mainly used for the wiring 26.

FIG. 8 shows that the semiconductor device 23 shown in FIG.
The bonding layer 2 is provided on the circuit board 20 having the input / output terminal electrodes 28.
9 is a cross-sectional view of a mounting body mounted via a conductive adhesive No. 9; FIG.

The bonding layer 29 is not limited to the conductive adhesive, but may be a solder, an anisotropic conductive adhesive, or an anisotropic conductive film. The conductive filler contained in the conductive adhesive and the anisotropic conductive adhesive is not problematic as long as it is a conductive filler such as Ag, Cu, and Ni. In the case of an anisotropic conductive film, for example, Ni particles or N
Those coated with i can be used. When the conductive adhesive and the anisotropic conductive adhesive are used, it is desirable that the gap between the semiconductor device and the circuit board is sealed with a resin. However, the resin may be sealed so as to surround at least the periphery of the joint. This resin sealing further improves the reliability of the joint. As the resin, an epoxy resin-based resin and a phenol resin or an acid anhydride as a curing agent can be used.

(Embodiment 5) FIG. 9 is a sectional view of a package according to a fifth embodiment of the present invention.

As shown in the figure, the package according to the present embodiment is a semiconductor device 3 having a terminal electrode 35 and a protective member 31.
3, a circuit board 30 having an input / output terminal electrode 38, and a wire 39. The element 32 in the semiconductor device 33 is below the terminal electrode 35, and the terminal electrode 35 and the semiconductor device 33
A protection member 31 is provided between the semiconductor device 33 and the input / output terminal electrode 3 of the circuit board 30.
8 are joined by a wire 39.

For example, Au can be used as the wire 39, and a solder wire is also possible. The terminal electrode 35 is mainly made of aluminum. The protection member 31
In order to suppress the impact during bonding, for example, Ti or W
It is desirable to use a material harder than the terminal electrode 35 such as. The protection member 31 can be formed in the same manner as the formation of the wiring at the time of the diffusion step, similarly to the wiring in the semiconductor device. An element refers to, for example, an active element such as a transistor or a passive element such as a resistor.

(Embodiment 6) FIG. 10 is a sectional view of a package according to a sixth embodiment of the present invention.

As shown in the figure, the semiconductor device 3 having the terminal electrodes 35 and the
3, a circuit board 30 having an input / output terminal electrode 38, and a wire 39. The wiring 36 in the semiconductor device 33 is below the terminal electrode 35, and the terminal electrode 35 and the semiconductor device 35
A terminal member 35 of the semiconductor device 33 and an input / output terminal electrode 3 of the circuit board 30;
8 are joined by a wire 39.

For example, Au can be used as the wire 39, and a solder wire can also be used. The terminal electrode 35 is mainly made of aluminum. The protection member 31
In order to suppress the impact during bonding, for example, Ti or W
It is desirable to use a material harder than the terminal electrode 35 such as. The protection member 31 can be formed in the same manner as the formation of the wiring at the time of the diffusion step, similarly to the wiring in the semiconductor device. Further, for example, aluminum can be used for the wiring.

(Embodiment 7) FIG. 11 is a sectional view of a package according to a seventh embodiment of the present invention.

As shown, the package of this embodiment comprises a semiconductor device 43 having terminal electrodes 45, a circuit board 40 having input / output terminal electrodes 48, and wires 49. The element 42 is located below the terminal electrode 45, and the terminal electrode 45 and the element 42 in the semiconductor device 43.
Is at least 0.5 μm or more, and the terminal electrode 45 of the semiconductor device 43 and the input / output terminal electrode 48 of the circuit board 40 are joined by a wire 49.

By separating the element 42 from the terminal electrode 45 by 0.5 μm or more, the propagation of the bonding shock can be reduced, and the characteristic deterioration of the element can be prevented.

As the wire 49, for example, Au can be used, and a solder wire is also possible. The terminal electrode 45 is mainly made of aluminum. An element refers to, for example, an active element such as a transistor or a passive element such as a resistor.

(Eighth Embodiment) FIG. 12 is a sectional view of a package according to an eighth embodiment of the present invention.

As shown, the package of this embodiment comprises a semiconductor device 43 having terminal electrodes 45, a circuit board 40 having input / output terminal electrodes 48, and wires 49. The wiring 46 is located under the terminal electrode 45, and is connected to the terminal electrode 45 and the wiring 46 in the semiconductor device 43.
Is at least 0.5 μm or more, and the terminal electrode 45 of the semiconductor device 43 and the input / output terminal electrode 48 of the circuit board 40 are joined by a wire 49.

By separating the wiring 46 from the terminal electrode 45 by 0.5 μm or more, the propagation of the bonding shock can be weakened and the deterioration of the wiring characteristics can be prevented.

As the wire 49, for example, Au can be used, and a solder wire is also possible. The terminal electrode 45 is mainly made of aluminum. In addition, the wiring 46 includes
For example, aluminum can be used.

(Embodiment 9) FIG. 13 shows a mounting body (TAB: Tape Automated Bond) according to a ninth embodiment of the present invention.
ing). FIG.

As shown in the figure, the package according to the present embodiment comprises a semiconductor device 53 having a terminal electrode 55, a protruding electrode 54 formed on the terminal electrode 55 and a protective member 51, and an input / output terminal electrode 58. Circuit board 50 having leads 59
And the element 5 in the semiconductor device 53.
2 has a protective member 51 between the terminal electrode 55 and the element 52 in the semiconductor device 53, and has a protruding electrode 54 of the semiconductor device 53 and an input / output terminal electrode 58 of the circuit board 50. Are joined by the lead 59. In addition,
57 is an adhesive.

For example, Au can be used for the protruding electrode 54, and it can be formed by either a wire bonding method or a plating method. For example, a copper foil can be used for the lead 59, and the lead 59 is thermocompression-bonded to the Au projecting electrode 54. The terminal electrode 55 is mainly made of aluminum. The protective member 51 is made of, for example, Ti
It is desirable to use a material harder than the terminal electrode 55 such as W or W. Further, the protection member 51 can be formed in the same manner as the formation of the wiring in the diffusion step, similarly to the wiring in the semiconductor device. An element refers to, for example, an active element such as a transistor or a passive element such as a resistor.

(Embodiment 10) FIG. 14 shows a first embodiment of the present invention.
0 (TAB: Tape AutomatedB)
FIG.

As shown in the figure, the package according to the present embodiment comprises a semiconductor device 53 having a terminal electrode 55, a protruding electrode 54 formed on the terminal electrode 55 and a protective member 51, and an input / output terminal electrode 58. Circuit board 50 having leads 59
And a wiring 5 in the semiconductor device 53.
Reference numeral 6 is below the terminal electrode 55, has a protective member 51 between the terminal electrode 55 and the wiring 56 in the semiconductor device 53, and has a protrusion electrode 54 of the semiconductor device 53 and an input / output terminal electrode 58 of the circuit board 50. Are joined by the lead 59. In addition,
57 is an adhesive.

For example, Au can be used for the protruding electrode 54, and it can be formed by either a wire bonding method or a plating method. For example, a copper foil can be used for the lead 59, and the lead 59 is thermocompression-bonded to the Au projecting electrode 54. The terminal electrode 55 is mainly made of aluminum. The protective member 51 is made of, for example, Ti
It is desirable to use a material harder than the terminal electrode 55 such as W or W. Further, the protection member 51 can be formed in the same manner as the formation of the wiring in the diffusion step, similarly to the wiring in the semiconductor device. Further, for example, aluminum can be used for the wiring.

(Embodiment 11) FIG. 15 shows a first embodiment of the present invention.
The package according to the first embodiment (TAB: Tape AutomatedB)
FIG.

As shown in the figure, the mounting body of the present embodiment is a mounting body including a semiconductor device 63 having terminal electrodes 65, a circuit board 60 having input / output terminal electrodes 68, and leads 69. The element 62 in the semiconductor device 63 is below the terminal electrode 65, and the terminal electrode 65 and the semiconductor device 63
The distance D from the inner element 62 is at least 0.5 μm or more, and the protruding electrode 64 formed on the terminal electrode 65 of the semiconductor device 63 and the input / output terminal electrode 68 of the circuit board 60 are joined by the lead 69. ing. In addition, 67 is an adhesive.

By separating the element 62 and the terminal electrode 65 by 0.5 μm or more, the propagation of the shock at the time of thermocompression bonding can be reduced, and the characteristic deterioration of the element can be prevented.

For example, Au can be used for the protruding electrode 64, and it can be formed by either a wire bonding method or a plating method. For example, a copper foil can be used for the lead 69, and the lead 69 is thermocompression-bonded to the bump electrode 64 of Au. The terminal electrode 65 is mainly made of aluminum. An element refers to, for example, an active element such as a transistor or a passive element such as a resistor.

(Embodiment 12) FIG. 16 shows a first embodiment of the present invention.
The package according to the second embodiment (TAB: Tape AutomatedB)
FIG.

As shown in the figure, the mounting body of the present embodiment is a mounting body including a semiconductor device 63 having terminal electrodes 65, a circuit board 60 having input / output terminal electrodes 68, and leads 69. The wiring 66 in the semiconductor device 63 is below the terminal electrode 65, and the terminal electrode 65 and the semiconductor device 63
The distance D from the inner wiring 66 is at least 0.5 μm or more, and the protruding electrode 64 formed on the terminal electrode 65 of the semiconductor device 63 and the input / output terminal electrode 68 of the circuit board 60 are joined by the lead 69. ing. In addition, 67 is an adhesive.

By separating the wiring 66 and the terminal electrode 65 by 0.5 μm or more, the propagation of the shock at the time of thermocompression bonding can be weakened, and the deterioration of the characteristics of the wiring can be prevented.

For example, Au can be used for the protruding electrode 64, and it can be formed by either a wire bonding method or a plating method. For example, a copper foil can be used for the lead 69, and the lead 69 is thermocompression-bonded to the bump electrode 64 of Au. The terminal electrode 65 is mainly made of aluminum. Further, for example, aluminum can be used for the wiring.

[0072]

As is apparent from the above description, according to the present invention, when a semiconductor device having an element or a wiring under a terminal electrode, which has not been established conventionally, is mounted by wire bonding. When mounting using a protruding electrode formed by a wire bonding method, or when performing other mounting requiring pressure, it is possible to mount at low cost without damaging elements and wiring. it can.

That is, one is to provide a protective member under the terminal electrode of the semiconductor device, or to make the distance between the terminal electrode and the element or wiring 0.5 μm or more to reduce the shock at the time of bonding. And does not damage elements and wiring existing thereunder. Secondly, this makes it possible to bond to a terminal electrode on an element, a wiring, or the like by using a low-cost wire bonding method that does not require a cleaning process and is environmentally friendly. Third, the semiconductor device can be made smaller than before because it can be bonded to the terminal electrodes on the elements and the internal wiring in the chip, and the wiring does not need to be drawn out to the periphery. Higher performance can be obtained. Fourth, even in a mounting mode using a protruding electrode of plating other than solder, mounting with terminal electrodes provided on elements or wiring becomes possible.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a mounted body in which the semiconductor device according to the first embodiment of the present invention is mounted on a circuit board via a bonding layer.

FIG. 3 is a schematic sectional view of a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a schematic sectional view of a mounted body in which a semiconductor device according to a second embodiment of the present invention is mounted on a circuit board via a bonding layer.

FIG. 5 is a schematic sectional view of a semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a schematic cross-sectional view of a mounted body in which a semiconductor device according to a third embodiment of the present invention is mounted on a circuit board via a bonding layer.

FIG. 7 is a schematic sectional view of a semiconductor device according to a fourth embodiment of the present invention.

FIG. 8 is a schematic cross-sectional view of a mounted body in which a semiconductor device according to a fourth embodiment of the present invention is mounted on a circuit board via a bonding layer.

FIG. 9 is a schematic sectional view of a package according to a fifth embodiment of the present invention.

FIG. 10 is a schematic sectional view of a package according to a sixth embodiment of the present invention.

FIG. 11 is a schematic sectional view of a package according to a seventh embodiment of the present invention.

FIG. 12 is a schematic sectional view of a mounting body according to an eighth embodiment of the present invention.

FIG. 13 is a schematic sectional view of a package according to a ninth embodiment of the present invention.

FIG. 14 is a schematic sectional view of a package according to a tenth embodiment of the present invention.

FIG. 15 is a schematic sectional view of a package according to an eleventh embodiment of the present invention.

FIG. 16 is a schematic sectional view of a package according to a twelfth embodiment of the present invention.

FIG. 17 is a schematic sectional view showing a conventional solder bump connection structure.

[Explanation of symbols]

1, 31, 51: Protective member 2, 22, 32, 42, 52, 62: Element 3, 23, 33, 43, 53, 63: Semiconductor device 4, 24, 54, 64: Protruding electrode (bump) 5, 25, 35, 45, 55, 65 (of semiconductor devices)
Terminal electrodes 6, 26, 36, 46, 56, 66: Wiring 57, 67: Adhesive 8, 28, 38, 48, 58, 68: Input / output terminal electrodes (of the circuit board) 9, 29: Bonding layer 39, 49: Wire 59, 69: Lead 10, 20, 30, 40, 50, 60: Circuit board 101: Solder (Pb-Sn) 102: Cu-Sn intermetallic compound 103: Cr-Cu 104: Cr 105: Glass protection Film 106: SiO ₂ film 107: Al

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[Procedure amendment]

[Submission date] April 7, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0009

[Correction method] Change

[Correction contents]

[0009]

Means for Solving the Problems The inventors of the present invention have found that by providing a protective member below the pad electrode, the shock due to bonding or mounting load can be reduced and the device can be mounted without destroying the elements. Was completed.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

[0010] that is, the semiconductor device of the present invention is a semiconductor device having a projection electrode formed on the terminal electrode and the terminal electrode, the protective member and the element及in said semiconductor device
And / or wiring, wherein the protection member is provided with the terminal electrode
The same material as or harder than
Or wiring in the area immediately below the terminal electrode, the possess the protective member at least one between the terminal electrode and the element and / or the wiring, and the protection and the terminal electrode
The member and the element are not in contact with each other .

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0011

[Correction method] Change

[Correction contents]

Further , a package according to the present invention is obtained by mounting the above semiconductor device via a bonding layer, a wire, or a lead. ────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] August 25, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0010

[Correction method] Change

[Correction contents]

That is, a semiconductor device according to the present invention is a semiconductor device having a terminal electrode and a protruding electrode formed on the terminal electrode, wherein the semiconductor device has a protection member, an element, and / or a wiring. The protection member is made of the same material as the terminal electrode or a harder material, and at least one
In the area directly under the device and / or the wiring of the terminal electrodes, and has the protective member at least one between the terminal electrode and the element and / or the wiring, and the protection and the terminal electrode The member and the element are not in contact with each other.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0030

[Correction method] Change

[Correction contents]

[0030] (Reference Example 1) Figure 5, the first reference of the present invention
FIG. 3 is a schematic cross-sectional view of a semiconductor device according to an example .

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0031

[Correction method] Change

[Correction contents]

As shown, the semiconductor device 2 of this embodiment is
Reference numeral 3 denotes a projection electrode 24 formed on a terminal electrode 25, an element 22 in the semiconductor device existing below the terminal electrode 25, and a distance D between the terminal electrode 25 and the element 22 in the semiconductor device.
Are at least 0.5 μm apart.

[Procedure amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0037

[Correction method] Change

[Correction contents]

[0037] (Reference Example 2) FIG. 7, a second reference of the present invention
FIG. 3 is a schematic cross-sectional view of a semiconductor device according to an example .

[Procedure amendment 6]

[Document name to be amended] Statement

[Correction target item name] 0038

[Correction method] Change

[Correction contents]

As shown, the semiconductor device 2 of the present reference example
Reference numeral 3 denotes a projection electrode 24 formed on a terminal electrode 25, a wiring 26 in the semiconductor device under the terminal electrode 25, and a distance D between the terminal electrode 25 and the wiring 26 in the semiconductor device.
Are at least 0.5 μm apart.

[Procedure amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0044

[Correction method] Change

[Correction contents]

(Embodiment 3 ) FIG. 9 is a sectional view of a package according to a third embodiment of the present invention.

[Procedure amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0047

[Correction method] Change

[Correction contents]

(Embodiment 4 ) FIG. 10 is a sectional view of a package according to a fourth embodiment of the present invention.

[Procedure amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0050

[Correction method] Change

[Correction contents]

(Embodiment 3 ) FIG. 11 is a sectional view of a package according to a third embodiment of the present invention.

[Procedure amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0051

[Correction method] Change

[Correction contents]

As shown in the figure, the package of this embodiment comprises a semiconductor device 43 having terminal electrodes 45, a circuit board 40 having input / output terminal electrodes 48, and wires 49.
The element 42 in the semiconductor device 43 is located below the terminal electrode 45, the distance D between the terminal electrode 45 and the element 42 in the semiconductor device 43 is at least 0.5 μm or more, and the terminal electrode 45 of the semiconductor device 43 The circuit board 45 and the input / output terminal electrodes 48 of the circuit board 40 are joined by wires 49.

[Procedure amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0054

[Correction method] Change

[Correction contents]

(Embodiment 4 ) FIG. 12 shows a fourth embodiment of the present invention.
It is sectional drawing of the mounting body concerning an example .

[Procedure amendment 12]

[Document name to be amended] Statement

[Correction target item name] 0055

[Correction method] Change

[Correction contents]

As shown in the figure, the mounting body of this embodiment comprises a semiconductor device 43 having terminal electrodes 45, a circuit board 40 having input / output terminal electrodes 48, and wires 49.
The wiring 46 in the semiconductor device 43 is below the terminal electrode 45, the distance D between the terminal electrode 45 and the wiring 46 in the semiconductor device 43 is at least 0.5 μm or more, and The input / output terminal electrodes 48 of the circuit board 40 are joined by wires 49.

[Procedure amendment 13]

[Document name to be amended] Statement

[Correction target item name] 0058

[Correction method] Change

[Correction contents]

[0058] (Embodiment 5) FIG. 13 is mounted body according to a fifth embodiment of the present invention (TAB: Tape Automated Bond
ing). FIG.

[Procedure amendment 14]

[Document name to be amended] Statement

[Correction target item name] 0061

[Correction method] Change

[Correction contents]

[0061] (Embodiment 6) FIG. 14 is mounted body according to a sixth embodiment of the present invention (TAB: Tape Automated Bond
ing). FIG.

[Procedure amendment 15]

[Document name to be amended] Statement

[Correction target item name] 0064

[Correction method] Change

[Correction contents]

(Embodiment 5 ) FIG. 15 shows a fifth embodiment of the present invention.
Such mounting body Examples: is a cross-sectional view of (TAB Tape Automated Bonding).

[Procedure amendment 16]

[Document name to be amended] Statement

[Correction target item name] 0065

[Correction method] Change

[Correction contents]

As shown in the figure, the mounting body of this embodiment is a mounting body including a semiconductor device 63 having terminal electrodes 65, a circuit board 60 having input / output terminal electrodes 68, and leads 69. The element 62 in the device 63 is below the terminal electrode 65, and the distance D between the terminal electrode 65 and the element 62 in the semiconductor device 63 is at least 0.5 μm or more, and is formed on the terminal electrode 65 of the semiconductor device 63. The projected electrode 64 and the input / output terminal electrode 68 of the circuit board 60 are joined by a lead 69. In addition, 67 is an adhesive.

[Procedure amendment 17]

[Document name to be amended] Statement

[Correction target item name]

[Correction method] Change

[Correction contents]

(Embodiment 6 ) FIG. 16 shows a sixth embodiment of the present invention.
Such mounting body Examples: is a cross-sectional view of (TAB Tape Automated Bonding).

[Procedure amendment 18]

[Document name to be amended] Statement

[Correction target item name] 0069

[Correction method] Change

[Correction contents]

As shown in the figure, the mounting body of the present embodiment is a mounting body including a semiconductor device 63 having terminal electrodes 65, a circuit board 60 having input / output terminal electrodes 68, and leads 69. The wiring 66 in the device 63 is below the terminal electrode 65, and the distance D between the terminal electrode 65 and the wiring 66 in the semiconductor device 63 is at least 0.5 μm or more, and is formed on the terminal electrode 65 of the semiconductor device 63. The projected electrode 64 and the input / output terminal electrode 68 of the circuit board 60 are joined by a lead 69. In addition, 67 is an adhesive.

[Procedure amendment 19]

[Document name to be amended] Statement

[Correction target item name] Brief description of drawings

[Correction method] Change

[Correction contents]

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view of a mounted body in which the semiconductor device according to the first embodiment of the present invention is mounted on a circuit board via a bonding layer.

FIG. 3 is a schematic sectional view of a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is a schematic sectional view of a mounted body in which a semiconductor device according to a second embodiment of the present invention is mounted on a circuit board via a bonding layer.

FIG. 5 is a schematic sectional view of a semiconductor device according to a first reference example of the present invention.

FIG. 6 is a schematic cross-sectional view of a mounted body in which the semiconductor device according to the first reference example of the present invention is mounted on a circuit board via a bonding layer.

FIG. 7 is a schematic sectional view of a semiconductor device according to a second reference example of the present invention.

FIG. 8 is a schematic sectional view of a mounted body in which a semiconductor device according to a second reference example of the present invention is mounted on a circuit board via a bonding layer.

FIG. 9 is a schematic sectional view of a package according to a third embodiment of the present invention.

FIG. 10 is a schematic sectional view of a package according to a fourth embodiment of the present invention.

FIG. 11 is a schematic sectional view of a package according to a third reference example of the present invention.

FIG. 12 is a schematic sectional view of a package according to a fourth reference example of the present invention.

FIG. 13 is a schematic sectional view of a package according to a fifth embodiment of the present invention.

FIG. 14 is a schematic sectional view of a package according to a sixth embodiment of the present invention.

FIG. 15 is a schematic sectional view of a mounting body according to a fifth reference example of the present invention.

FIG. 16 is a schematic sectional view of a package according to a sixth reference example of the present invention.

FIG. 17 is a schematic sectional view showing a conventional solder bump connection structure.

Claims (27)

[Claims] 1. A semiconductor device having a terminal electrode, a protruding electrode formed on the terminal electrode, and a protective member, wherein an element in the semiconductor device is below the terminal electrode, and A semiconductor device having at least one or more of the protective members between the device and an element in the semiconductor device. 2. A package comprising: a semiconductor device having a terminal electrode, a projection electrode formed on the terminal electrode, and a protection member; a circuit board having input / output terminal electrodes; and a bonding layer, An element in the semiconductor device is below the terminal electrode, and has at least one or more of the protective members between the terminal electrode and an element in the semiconductor device, wherein the semiconductor device is an input / output terminal of the circuit board. A mounting body, which is bonded to an electrode via a bonding layer. 3. A semiconductor device having a terminal electrode, a protruding electrode formed on the terminal electrode, and a protective member, wherein a wiring in the semiconductor device is below the terminal electrode, and A semiconductor device comprising at least one or more of the protective members between a wiring in the semiconductor device. 4. A package comprising a semiconductor device having a terminal electrode, a protruding electrode formed on the terminal electrode and a protective member, a circuit board having an input / output terminal electrode, and a bonding layer, A wiring in the semiconductor device is below the terminal electrode, and has at least one or more of the protective members between the terminal electrode and the wiring in the semiconductor device, wherein the semiconductor device is an input / output terminal of the circuit board. A mounting body, which is bonded to an electrode via a bonding layer. 5. A semiconductor device having a terminal electrode and a protruding electrode formed on the terminal electrode, wherein an element in the semiconductor device exists below the terminal electrode, wherein the terminal electrode and the semiconductor device have Wherein the elements are separated by at least 0.5 μm or more. 6. A mounting body comprising a semiconductor device having a terminal electrode, a projecting electrode formed on the terminal electrode, a circuit board having an input / output terminal electrode, and a bonding layer, wherein There is an element in the semiconductor device, the terminal electrode and the element in the semiconductor device is at least 0.5
A mounting body, which is separated by at least μm, and wherein the semiconductor device is bonded to an input / output terminal electrode of the circuit board via a bonding layer. 7. A semiconductor device having a terminal electrode and a protruding electrode formed on the terminal electrode, wherein a wiring in the semiconductor device exists below the terminal electrode, and the terminal electrode and the semiconductor device have Wherein the wires are separated by at least 0.5 μm or more. 8. A mounting body comprising a semiconductor device having a terminal electrode, a projecting electrode formed on the terminal electrode, a circuit board having an input / output terminal electrode, and a bonding layer, wherein There is a wiring in the semiconductor device, the terminal electrode and the wiring in the semiconductor device are at least 0.5
A mounting body, which is separated by at least μm, and wherein the semiconductor device is bonded to an input / output terminal electrode of the circuit board via a bonding layer. 9. A package comprising a semiconductor device having a terminal electrode and a protective member, a circuit board having an input / output terminal electrode, and wires, wherein an element in the semiconductor device is below the terminal electrode. Having at least one protection member between the terminal electrode and an element in the semiconductor device,
A mounting body, wherein the semiconductor device is joined to input / output terminal electrodes of the circuit board by wires. 10. A package comprising a semiconductor device having a terminal electrode and a protective member, a circuit board having an input / output terminal electrode, and wires, wherein the wiring in the semiconductor device is below the terminal electrode. And at least one protection member between the terminal electrode and the wiring in the semiconductor device, wherein the semiconductor device is joined to an input / output terminal electrode of the circuit board by a wire. Implementation body. 11. A package comprising a semiconductor device having terminal electrodes, a circuit board having input / output terminal electrodes, and wires, wherein an element in the semiconductor device is below the terminal electrodes, A mounted body, wherein a terminal electrode and an element in the semiconductor device are separated by at least 0.5 μm or more, and the semiconductor device is joined to an input / output terminal electrode of the circuit board by a wire. 12. A package comprising a semiconductor device having terminal electrodes, a circuit board having input / output terminal electrodes, and wires, wherein a wiring in the semiconductor device is below the terminal electrodes, A mounting body, wherein a terminal electrode and a wiring in the semiconductor device are separated by at least 0.5 μm or more, and the semiconductor device is joined to an input / output terminal electrode of the circuit board by a wire. 13. A package comprising a semiconductor device having a terminal electrode, a protruding electrode formed on the terminal electrode, and a protective member, a circuit board having an input / output terminal electrode, and a lead, wherein the semiconductor device comprises: An element in the device is below the terminal electrode, and has at least one or more of the protective members between the terminal electrode and an element in the semiconductor device, wherein the semiconductor device is an input / output terminal electrode of the circuit board. And a lead body joined by a lead. 14. A package comprising a semiconductor device having a terminal electrode, a protruding electrode formed on the terminal electrode, and a protective member, a circuit board having an input / output terminal electrode, and a lead, wherein the semiconductor device comprises: A wiring in the device is below the terminal electrode, and has at least one or more of the protection members between the terminal electrode and the wiring in the semiconductor device, wherein the semiconductor device is an input / output terminal electrode of the circuit board. And a lead body joined by a lead. 15. A package comprising a semiconductor device having terminal electrodes, a circuit board having input / output terminal electrodes, and leads, wherein an element in the semiconductor device is below the terminal electrodes, A package wherein the electrodes and the elements in the semiconductor device are separated by at least 0.5 μm or more, and the semiconductor device is joined to input / output terminal electrodes of the circuit board by leads. 16. A package comprising a semiconductor device having terminal electrodes, a circuit board having input / output terminal electrodes, and leads, wherein the wiring in the semiconductor device is below the terminal electrodes, A mounting body, wherein the electrode and the wiring in the semiconductor device are separated by at least 0.5 μm or more, and the semiconductor device is joined to an input / output terminal electrode of the circuit board by a lead. 17. The method according to claim 17, wherein the protruding electrodes are formed by using a wire bonding method, and are formed of Au, Al, Pd, Pb, Sn, and C.
8. The semiconductor device according to claim 1, comprising at least one of u, In, Bi, Ti, Ni or an alloy thereof. 18. The bump electrode is formed by using a wire bonding method, and includes Au, Al, Pd, Pb, Sn, and C.
and at least one of u, In, Bi, Ti, Ni or an alloy thereof.
17. The package according to any one of 4, 15, and 16. 19. The bump electrode is formed using a plating method, and includes Au, Al, Pd, Cu, Ni, Ti, Cr, and A.
The semiconductor device according to any one of claims 1, 3, 5, and 7, comprising at least one of g and an alloy thereof. 20. The bump electrode is formed by using a plating method, and includes Au, Al, Pd, Cu, Ni, Ti, Cr, and A.
The package according to any one of claims 2, 4, 6, 8, 13, 14, 15, and 16, comprising at least one of g and an alloy thereof. 21. The bump electrode is formed by a printing method, and is made of Ag, Pd, Pt, Cu, Ni, Pb, Sn, Bi.
8. The semiconductor device according to claim 1, comprising at least one of these alloys. 22. The bump electrode is formed by a printing method, and is made of Ag, Pd, Pt, Cu, Ni, Pb, Sn, Bi.
The package according to any one of claims 2, 4, 6, 8, 13, 14, 15, and 16, comprising at least one of these alloys. 23. The bonding layer according to claim 2, wherein at least one of a conductive adhesive, an anisotropic conductive adhesive, an anisotropic conductive film, and solder is used. Mounting body described in 24. The semiconductor device according to claim 1, wherein the protection member is made of the same material as or a material harder than the terminal electrode of the semiconductor device. 25. The protective member is made of the same material as or a material harder than the terminal electrode of the semiconductor device.
The mounting body according to 4, 9, 10, 13, or 14. 26. The method according to claim 26, wherein the wires are Au, Al, Pd, P
The package according to claim 9, wherein the package is formed using at least one of b, Sn, Cu, In, Bi, Ti, Ni, and an alloy thereof. 27. The method according to claim 27, wherein the leads are made of Au, Al, Pd, P
17. The package according to claim 13, wherein the package is formed using at least one of b, Sn, Cu, In, Bi, Ti, Ni, or an alloy thereof.