JPH11329960A - Substrate processing method and device therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing method and device using chemicals in which reaction product concentration and reaction material substance concentration in chemicals brought into contact with a substrate can be made uniform in a substrate face, and working after substrate processing can be made uniform in a substrate face. SOLUTION: Chemicals such as developer is supplied to the main face of a substrate such as a silicon wafer by a nozzle 71 so that a chemical film (developer film) can be formed on the substrate. The chemical film and a chemical holding member 72 are brought into contact with each other, and at least either the substrate or the chemical holding member is moved in parallel to the main face of the substrate in the chemical processing for stirring the chemicals so that reaction product concentration and reaction material substrate concentration in chemicals brought into contact with the substrate can be made uniform in the substrate face, and working after the substrate processing can be made uniform in the substrate face. Therefore, any reaction product can be prevented from remaining in the neighborhood of the surface of the processing substrate, or the reaction material substance concentration can be prevented from being deteriorated by stirring the chemicals. Thus, the processing speed can be increased.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for processing a substrate used for a semiconductor device or a liquid crystal display, and more particularly to a method and an apparatus for processing a substrate using a chemical solution.

[0002]

2. Description of the Related Art In a semiconductor device or a liquid crystal display, various processes are performed on a substrate, and finally a fine pattern is formed to add a desired function. When such a substrate is processed, not only a dry process using a gas but also a wet process using a chemical solution is widely used. For example, a wet process is used in a developing process for forming a photosensitive resin pattern used for processing a fine pattern. In the case of forming a photosensitive resin pattern, first, a photosensitive resin is applied onto a film to be processed formed on a silicon or quartz substrate, and the photosensitive resin in a desired region is exposed using an exposure mask. . Next, the developing step is a step of forming a photosensitive resin pattern by removing a photosensitive portion in a positive type or an unexposed portion in a negative type using a developing solution, for example, an organic solvent or an alkaline aqueous solution. Also, in the case of processing a chrome mask for exposure, a wet process is used on the chromium film. In this case, after forming a chromium film on a quartz substrate, a photosensitive resin pattern is formed, and cerium ammonium nitrate (ammonium cerium nitra) is formed.
te) The chromium film exposed from the photosensitive resin pattern is isotropically wet-etched using a solution or the like.

Also, prior to processing, a mixed chemical solution of sulfuric acid and hydrogen peroxide is used to remove unnecessary organic substances adhering to a substrate or to remove a photosensitive resin pattern remaining after etching. Have been. The natural oxide film formed by the reaction between oxygen in the air and the silicon substrate is also removed by using NH ₄ F or diluted HF as a chemical solution to prevent uniform processing. Further, when depositing gold on a silicon wafer, an Au plating solution is used. Wet processing methods include dip processing in which a substrate is immersed in a chemical solution and paddle processing in which a chemical solution is supplied to the main surface of the substrate to perform processing.However, dip processing requires a large amount of chemical solution and contamination from the back surface. There is a problem, and the direction from dip processing to paddle processing is moving. In the paddle processing, there is a method in which the substrate is fixed from the back surface by a vacuum chuck or the like, and after the chemical solution is supplied, the substrate is allowed to stand still for processing (Japanese Patent Laid-Open No. 7-235)
473).

[0004]

In the wet processing, the processing proceeds by a chemical reaction between a chemical solution and a film to be processed. For this reason, the concentration of the reaction product generated increases with the elapse of the processing time, and the concentration of the raw material substance of the chemical solution decreases. Since the diffusion of reaction products and raw materials is not always fast enough, there has been a problem that their concentrations locally change and processing is not always uniform in the plane. For example, taking the development step as an example, in a development method in which a desired region is removed with an alkaline aqueous solution, the resin in the region to be removed of the resist is an alkaline aqueous solution because it has an acidic group such as carboxylic acid or phenol in a side chain. The resist resin is dissolved by the neutralization reaction with the developer. Conventionally, during development, the diffusion of the dissolved resin is slow because the wafer is left standing, and the dissolved resin stays near the resist removal area. Also, since the diffusion of the OH group is not sufficiently fast, after the OH group is consumed in the neutralization reaction, the OH group concentration near the resist removal region locally decreases,
The pH also drops locally. The volume of the removal area, ie
Since the amount of resin to be dissolved depends on the pattern, it is not always uniform in the substrate, and as a result, the finished dimensions of the photosensitive resin in the substrate surface are not uniform.

In the conventional method described in the above-mentioned Japanese Patent Application Laid-Open No. 7-235473, a capillarity phenomenon is induced in a processing liquid in a gap between a proximity plate and a wafer in a rotary resist development processing apparatus, thereby forming a resist on a resist film. Is to shorten the processing solution diffusion time to alleviate uneven development. However, in this method, when the developer spreads over the entire surface of the resist film, the developer is left for a predetermined period of time to perform development. As described above, a local change in pH occurs in the developer, which is a problem in the development process. there were. As a method of stirring the developing solution during development, Japanese Patent Application Laid-Open No. 57-208134 discloses a method using an ultrasonic transmitter. However, when ultrasonic waves are used, the cavitation effect due to vibration causes generation and disappearance of cavities in the chemical solution. Since the acoustic impedance of the substrate is larger than the acoustic impedance of the chemical solution, this cavity is generated especially on the substrate. Due to this cavity, the contact between the chemical solution and the substrate is not always uniform within the substrate surface, which causes a problem that processing uniformity is reduced within the substrate surface. In addition, there is a problem that a portion where the chemical solution does not come into contact with the substrate is generated due to the cavity, and thus a defect is generated. The present invention has been made in view of such circumstances, and the reaction product concentration and the reaction raw material concentration in the chemical solution contacting the substrate are made uniform in the substrate surface, and the processing after the substrate processing is made uniform in the substrate surface. A substrate processing method and a substrate processing apparatus using a chemical solution are provided.

[0006]

According to the present invention, a chemical solution is contacted with a chemical solution holding member, and at least one of the substrate and the chemical solution holding member is moved in parallel with the main surface of the substrate during the chemical solution processing to stir the chemical solution. By doing so, the concentration of the reaction product and the concentration of the reaction raw material in the chemical solution contacting the substrate are made uniform in the substrate surface, and the processing after the substrate processing is made uniform in the substrate surface. The agitation can prevent the reaction product from staying in the vicinity of the surface of the processing substrate or keeping the concentration of the reaction raw material from decreasing, so that the processing speed can be improved. In the substrate processing method of the present invention, a chemical solution is supplied to the main surface of the substrate, and the upper surface of the chemical solution is brought into contact with a chemical solution holding member arranged to face the substrate,
And after holding the chemical between the substrate and the chemical holding member, the substrate main surface is moved to the chemical while moving at least one of the substrate and the chemical holding member in parallel with the substrate main surface. It is characterized by processing.
The chemical holding member may be a chemical supply nozzle. The nozzle for supplying a chemical solution to the main surface of the substrate is a disk-shaped nozzle having a plurality of nozzle holes or a discharge unit arranged in a straight line has a length substantially equal to the substrate diameter, and supplies the chemical solution from this discharge unit. A linear nozzle that supplies the chemical solution while rotating the substrate using the nozzle, or scans the chemical solution while scanning the nozzle parallel to the upper surface of the substrate that has been left standing using the linear nozzle. May be supplied. The disk-shaped nozzle may have a slightly convex surface facing the substrate. The movement parallel to the main surface of the substrate may be a reciprocating movement or a rotating movement. After supplying the chemical liquid to the main surface of the substrate, the chemical liquid holding member may be arranged to face the substrate, and the chemical liquid holding member may be brought into contact with the surface of the chemical liquid. The rotation or reciprocation parallel to the main surface of the substrate may move the substrate while fixing the liquid holding member. The rotation speed of the rotation may be 10 to 50 rpm.

The chemical solution is supplied to the main surface of the substrate by using a chemical solution supply nozzle for the chemical solution holding member, forming a single chemical solution film on the surface of the chemical solution supply nozzle facing the substrate, and then supplying the chemical solution. The film may be supplied to the main surface of the substrate in the state of a film. The chemical solution may be supplied almost simultaneously to the entire surface of the substrate. The substrate may be supplied with the chemical solution while maintaining a surface of the substrate facing the chemical solution supply nozzle in a convex state with respect to the nozzle. The central portion of the surface of the chemical solution supply nozzle facing the substrate is formed in a convex shape, and the surface of the single chemical film is formed in a convex shape. You may make it contact. The supply of the chemical solution to the main surface of the substrate may be performed by using a chemical solution supply nozzle for the chemical solution holding member and depressurizing a space region between the substrate and the chemical solution supply nozzle. The chemical is a developer, an etchant,
A cleaning liquid, a stripping liquid, a film forming liquid or a plating liquid may be used. After the treatment using the chemical liquid, the chemical liquid may be switched to a rinse liquid to rinse the main surface of the substrate and to rinse the chemical liquid holding member at the same time. The reciprocating motion or the rotating motion parallel to the main surface of the substrate may fix the substrate and move the chemical solution holding member.

In the reciprocating motion or the rotating motion parallel to the main surface of the substrate, the substrate and the chemical solution holding member may be moved in the same direction to perform a relative motion. The reciprocating motion or the rotational motion parallel to the main surface of the substrate may cause the substrate and the chemical solution holding member to move in opposite directions to perform a relative motion. In the reciprocating motion or the rotating motion parallel to the main surface of the substrate, the substrate and the chemical solution holding member may be moved in opposite directions to perform a relative motion. In the reciprocating motion or the rotating motion parallel to the main surface of the substrate, one of the substrate and the chemical solution holding member may be reciprocated and the other may be rotated. The substrate processing apparatus of the present invention is arranged such that a mounting table on which a substrate to be processed is mounted, a chemical solution supply nozzle for supplying a chemical solution to the main surface of the substrate, and the substrate are opposed to each other, and are in contact with the upper surface of the chemical solution. And a mechanism for moving at least one of the substrate and the chemical solution holding member in a direction parallel to the main surface of the substrate during chemical solution processing. The chemical solution holding member may be the chemical solution supply nozzle. The chemical solution holding member may be smaller than the substrate. The mechanism for moving at least one of the substrate and the chemical solution holding member in a direction parallel to the main surface of the substrate while performing the chemical solution processing may be a horizontal drive unit or a rotary drive unit. A plurality of chemical solution discharge ports are arranged on a surface of the chemical solution supply nozzle facing the substrate, and among the chemical solution discharge ports, when the chemical solution discharge port adjacent to the moving direction of the chemical solution holding member or the substrate moves, the substrate is moved. It may be arranged so as to pass through different upper positions. The chemical solution supply nozzle may have a plurality of chemical solution outlets, and the plurality of chemical solution outlets may be uniformly distributed on the substrate main surface.

[0009]

Embodiments of the present invention will be described below with reference to the drawings. The present invention is characterized in that a chemical solution is brought into contact with a chemical solution holding member, and at least one of the substrate and the chemical solution holding member is moved in parallel with the main surface of the substrate during the chemical solution processing to stir the chemical solution. First, FIGS. 1 to 6
The first embodiment will be described with reference to FIG. A description will be given of a case where a developing solution supply nozzle is used as a chemical solution holding member in the photosensitive resin pattern developing process, and the developing solution is stirred by a rotational motion in a direction horizontal to the wafer surface. FIG. 1 is an example of a system configuration of a coating and developing apparatus and an exposure machine used in this embodiment.

The coating and developing apparatus is a cassette station 1
01, processing station 102, interface unit 1
The exposure unit 104 and the coating and developing device are connected by an interface unit 103. The cassette station 101 can load or unload a plurality of, for example, 25, semiconductor wafers (hereinafter, referred to as wafers) (not shown) as substrates to be processed into or from the system in units of wafer cassettes (not shown). It has become. Further, a wafer can be carried into or out of the processing station 102 from a wafer cassette. In the processing station 102, various single-wafer processing units for performing predetermined processing on wafers one by one in a coating and developing process are arranged at predetermined positions in multiple stages. The processing station 102 includes a coating unit 105, a developing unit 106,
It comprises an oven type processing unit 107. The coating unit 105 and the developing unit 106 are, for example, spinner-type units that perform predetermined processing by placing a wafer on a spin chuck in a cup, and are used for coating a resist, an antireflection film, and the like, and developing the resist and the like.

The oven type processing unit 107 is a unit for performing a predetermined process by placing a wafer on a mounting table, for example, a cooling unit 108 for performing a cooling process, and a so-called hydrophobic process for improving the fixability of a resist. Adhesion unit 109, alignment unit 110 for positioning, extension unit 11
1. A pre-baking unit 112 for performing a heating process before the exposure process, a post-exposure baking unit 113 for performing a heating process after the exposure process, and a baking unit 114 are arranged in an overlapping manner. In the interface unit 103, the processing station 102 and the exposure apparatus 1
The transfer of the wafer is performed with respect to the wafer 04. The processing of the wafer is performed as follows. A predetermined number of wafers are placed on a wafer cassette and set on the cassette station 101. The wafer is transported from the cassette station 101 to the cooling unit 108 of the oven type processing unit 107, and is placed on the antireflection film coating unit 105 after being placed for 40 seconds. Here, an antireflection film is applied to a thickness of 60 nm. The wafer is transferred to the baking unit 114 at 175 ° C. of the oven-type processing unit 107 and heat-treated for 60 seconds.

Thereafter, the cooling unit 1
08 and cooled at 23 ° C. for 60 seconds. next,
The resist is conveyed to a resist coating unit 105 to apply a resist, and a positive photosensitive resin having a thickness of 0.3 μm is applied. The wafer is placed in the oven type processing unit 107 at 100
The wafer is conveyed to the pre-baking unit 112 at a temperature of ° C. and pre-baked for 90 seconds. Thereafter, the wafer is transferred to the cooling unit 108 and cooled at 23 ° C. for 60 seconds. Next, the wafer is transferred to the interface unit 103 and loaded into the exposure apparatus 104. Exposure is NA =
0.55, σ = 0.55, with normal illumination. After this,
The wafer enters the coating / developing apparatus through the interface unit 103 and is heated at 100 ° C. for 90 seconds in the post-exposure baking unit 113.

Next, the developing unit in this embodiment will be described. 2 and 3 are a cross-sectional view and a plan view showing the entire configuration of the developing unit. An annular cup CP is arranged at the center of the development processing unit, and a spin chuck 201 is arranged inside the cup CP. The spin chuck 201 is rotationally driven by a drive motor 202 in a state where the wafer W is fixedly held by vacuum suction. The drive motor 202 is disposed at an opening of the unit bottom plate 203 so as to be able to move up and down, and for example, via a cap-shaped flange member 204 made of aluminum, the up-and-down drive means 2 made of an air cylinder, for example.
05 and the elevating guide means 206. A cylindrical cooling jacket 207 made of, for example, SUS is attached to the side surface of the drive motor 202, and the flange member 204 is attached so as to cover half of the cooling jacket 207. When applying the developer to the wafer,
The lower end of the flange member 204 is in close contact with the outer periphery of the opening of the unit bottom plate 203, thereby sealing the inside of the unit. When the wafer W is transferred between the spin chuck 201 and a main wafer transfer mechanism (not shown), the lifting drive unit 205 raises the drive motor 202 or the spin chuck 201 upward, thereby lowering the lower end of the flange member 204. Are floated from the unit bottom plate 203. As a result, the drive motor 202 and the spin chuck 201 are lifted up integrally with the flange member 204.

A developer supply nozzle 208 for supplying a developer to the surface of the wafer is connected to a developer supply section (not shown) via a developer supply pipe 209. The developer supply nozzle 208 is detachably attached to the tip of a nozzle scan arm 210 via a nozzle holder 211. The scan arm 210 is attached to the upper end of a vertical support member 213 that can move horizontally on a guide rail 212 laid in one direction (Y direction) on the unit bottom plate 203 and is driven by a Y direction drive mechanism (not shown). It moves in the Y direction integrally with the vertical support member 213. As shown in FIG. 3, the developer supply nozzle 208 is substantially the same shape as the wafer W, has a disk shape slightly larger than the wafer, and rotates the wafer W while supplying a disk-like developer solution. A developing solution is supplied from the entire nozzle 208 to apply the developing solution to the entire surface of the wafer W. The developer supply nozzle 208 is attached to the tip of the nozzle scan arm 210 movably on the guide rail 212 in the Y direction, and is configured to move between a position facing the wafer W and a retreat position 214. ing. In FIG. 3,
The nozzle retreat position 214 is on the side of the wafer W, but may be above the wafer W. Further, a rinse nozzle 215 for discharging the cleaning liquid is provided.
Reference numeral 15 is attached to the tip of a nozzle scan arm 216 provided movably on the guide rail 212 in the Y direction.

Thus, after the development process using the developing solution is completed, the cleaning solution is moved onto the wafer W and the cleaning solution is discharged onto the wafer W. Next, the operation of the development processing in the development processing unit will be described. Post-exposure baking completed wafer W processed as described above
Is moved to the developing unit 106 (FIG. 1), and the wafer W is fixed to the spin chuck 201. Developer supply nozzle 2
08 is substantially the same shape as the wafer W, and the wafer W
This is a disk in which holes of 0.5 mm are radially arranged at intervals of 4 mm on the surface facing the wafer W. Further, the upper surface of the wafer W and the developer supply nozzle 20
8 The gap on the lower surface is set to 2 mm. First, the developing solution is simultaneously supplied to the entire surface of the wafer W from the disk-type developing solution supply nozzle 208, and the wafer W is rotated at 60 rpm. Thereby, a developer film is formed on the wafer W with a thickness of 2 mm.

FIG. 4 shows the state at this time. FIG. 4 is a partial perspective plan view of the developing unit and a cross-sectional view of a portion taken along line AA ′ of the plan view. The disk nozzle 43 (the developer supply nozzle 20 shown in FIGS.
The gap between 8) and the wafer 41 (W in FIGS. 2 and 3) is filled with the developing solution, so that the lower surface of the disk nozzle 43 and the upper surface of the developing solution film 44 come into contact. Next, while the wafer 41 is rotated at 30 rpm, the disk nozzle 43 is stopped, and development is performed so that the total time from the start of the supply of the developer to the start of the supply of the rinse liquid is 60 seconds in total. Thereafter, as shown in FIG.
08 and move it to the retreat position 214,
Next, the rinse nozzle 215 was moved to the center of the wafer W. The wafer W is rotated at 2000 rpm, the developing solution is shaken off, the rinsing liquid is supplied, and the rinsing liquid is supplied to stop the development. Thereafter, the wafer rotation speed is set to 500 rpm to wash the wafer W. Rotate W to dry.

Regarding the 0.225 μm line-and-space (L & S) pattern formed in this way, during development, the developing solution film is brought into contact with the lower surface of the nozzle, and the variation in the finished dimension with respect to the number of rotations when the wafer is rotated at a low speed. FIG. 5 shows the change in (3σ). FIG. 5 is a characteristic diagram showing the dependence of the variation in the finished wafer size on the number of rotations of the wafer. The vertical axis represents the finished dimension (3σ) (nm), and the horizontal axis represents the wafer rotation speed (rpm). During development, when the wafer is rotated at a rotation speed of 30 rpm and 40 rpm, 3
It can be seen that σ takes a minimum value of 8 nm. On the other hand, when the wafer is not rotated, 3σ is 20 nm. Further, in the conventional case where the developing solution is supplied without bringing the developing solution film into contact with the nozzle and the wafer is not rotated during the development (in the case of “disc nozzle non-wetted developing” in FIG. 5), as in the normal development. 3σ is 23 nm. Therefore, during the development, the developing solution is agitated by bringing the developing solution film into contact with the lower surface of the nozzle and rotating the wafer at an appropriate rotation speed (10 to 50 rpm, preferably or 30 to 40 rpm), thereby improving in-plane uniformity. You can see that.

The effect of improving the in-plane uniformity of the finished dimension of the resist pattern is not limited to the 0.225 μm L & S pattern, and is effective for any pattern regardless of the pattern or pattern dimension. Next, the results obtained when the ultrasonic transmitter is used will be described. After a developer film is formed on the wafer using a disk-shaped nozzle in the same manner as described above, a disk having a bottom having substantially the same shape as the wafer in which the ultrasonic transmitter is incorporated is brought into contact with the upper surface of the developer film to generate ultrasonic waves.
Irradiate for seconds. Thereafter, the disk is retracted and rinsed and dried in the same manner as described above. In this case, 3σ is 30n
m. This value is not only worse than when the developer film is brought into contact with the lower surface of the nozzle during development, but also when the wafer is rotated at a low speed, and the developer is supplied without bringing the developer film into contact with the nozzle. Worse than not rotating the wafer. Therefore, it can be seen that the ultrasonic transmitter does not improve the uniformity of the finished dimensions in the wafer surface. This is presumably because the cavitation effect due to the vibration caused the generation and disappearance of cavities in the chemical solution in contact with the substrate, so that the contact between the chemical solution and the substrate was not always uniform within the substrate surface.

In the above, during the development, the wafer is rotated at a low speed, while the disk nozzle in contact with the upper surface of the developing solution film is stopped to stir the developing solution. The stirring performed here is considered as follows. Hereinafter, description will be made with reference to FIG. FIG. 6 is a partial sectional view of the developing unit. When the upper surface of the developer film does not contact the disk nozzle, the developer is
There is no agitation effect because it follows the rotational movement of the wafer.
Further, the developer spills outward due to centrifugal force, and the thickness of the liquid film becomes non-uniform, so that the in-plane uniformity of the finish is deteriorated. However, when the lower surface of the disk nozzle 61 is brought into contact with the upper surface of the developer film 62 as shown in FIG. 6, a frictional force is generated between the developer film 62 and the lower surface of the disk nozzle 61. Wafer 6
When the developer film 3 is rotated, the developer film 62 follows the wafer 63 and tries to rotate together. However, due to the frictional force between the developer film 62 and the lower surface of the disk nozzle 61, the developer film 62 is , And the rotation speed of the developer film 62 is lower than that of the wafer 63. Therefore, the developer film 62 has a relative movement speed with respect to the wafer 63, and the stagnation of the reaction product and the consumption of the reactant material in the developer film 62 in contact with the wafer 63 cause the photosensitive material to be exposed within the wafer surface. Prevent local occurrence depending on sexual pattern.

Further, the rotation speed of the developer film 62 is
In the vicinity of 3, the rotation speed of the wafer 63 increases, and in the vicinity of the disk nozzle 61, the rotation speed decreases due to the stationary state of the nozzle 61. Differently, it is believed that this results in a stirring effect. The stirring according to the present invention causes the movement of the chemical solution by changing the movement speed above and below the chemical solution, as described above. Therefore, the chemical can be easily moved over a wide range. On the other hand, when an ultrasonic transmitter is used, stirring occurs due to minute vibration of the chemical solution, so that the movement of the chemical solution is
Be local. For this reason, the method of the present invention enables a wide range of agitation of a chemical solution, and is effective in making the concentrations of a reaction raw material and a reaction product uniform. Further, at an appropriate rotation speed, the frictional force between the disk nozzle 61 and the developer film 62 prevents the developer film 62 from spilling due to the centrifugal force and the liquid film thickness from fluctuating. As a result, uniformity of finished dimensions can be obtained.

In the above description, the wafer is rotated in parallel with the wafer surface. However, the same effect can be obtained if the wafer and the chemical solution holding member (developing solution supply nozzle or disk nozzle) move relative to each other. The wafer may be stopped by moving the member side. Alternatively, both the chemical solution holding member and the wafer may be moved so as to relatively move in the forward or reverse direction. Further, in the above description, rinsing is performed using a straight pipe type rinsing nozzle, but a disk nozzle may be used. In particular, when the chemical solution supply nozzle and the chemical solution holding member are the same, rinsing is performed by supplying the rinsing solution from the same nozzle, and if the rinsing solution is brought into contact with the nozzle for a certain period of time, the nozzle surface can be cleaned together with the rinsing. However, as described above, when the rinsing liquid is brought into contact with the nozzle, the chemical liquid stays between the nozzle and the wafer. Therefore, a process of separating the nozzle and the chemical liquid to remove the rinsing liquid needs to be performed.

Next, a second embodiment will be described with reference to FIGS. 7, 8, and 20 to 24. FIG. 7 and 8 are a cross-sectional view and a plan view showing the entire configuration of the development processing unit.
0 is a perspective view and a cross-sectional view of a wafer illustrating a developing method using the developing processing unit, FIG. 21 is a cross-sectional view of a nozzle used in this embodiment and a plan view seen from the lower surface of the nozzle,
FIG. 22 is a sectional view and a side view of the nozzle, FIG. 23 is a sectional view of the nozzle, and FIG. 24 is a perspective view of the nozzle. The unit is provided with a linear developer supply nozzle 71 in which a discharge portion having substantially the same length as the diameter of the wafer W is linearly arranged, and the developer supply nozzle 71 is connected to the wafer W via a developer. A developer holding member 72 arranged to be opposed is added. The developer holding member (stirring member) 72 is attached to the tip of a holding member scan arm 74 which is a moving mechanism provided movably on the guide rail 73 in the Y direction, and retracts to a position facing the wafer W. It moves between positions.

The developer supply nozzle 71 is connected to the guide rail 7
The developing solution supply nozzle 71 is attached to a nozzle scan arm attached to a column fixed at a position different from the position 3, and the developing solution supply nozzle 71 comes into contact with or separates from a position close to the wafer W by the vertical movement of the arm. Another guide rail may be provided at a position apart from the guide rail 73, and a column for supporting the nozzle scan arm may be movably attached to the guide rail, and the column may move on the rail. As illustrated in FIG. 21, the developer supply nozzle has a liquid reservoir for storing the developer from the developer supply pipe, and a linear reservoir having substantially the same length as the wafer diameter for supplying the developer. It has at least a discharge unit. The nozzle has a rectangular container-shaped liquid reservoir. The bottom of the nozzle is
The ejection portion is formed in a convex shape, and small holes having a diameter of 0.4 mm are arranged in a row at approximately 2 mm intervals in the convex portion. The ejection section has a length substantially equal to the diameter of the wafer. Since the developer spreads after coming out of the nozzle hole, it does not always need a length longer than the diameter. The width of the nozzle itself is
It is about 35 mm. The developer is temporarily stored in a liquid reservoir and then supplied so as to seep out from a small hole (nozzle hole) on the bottom surface.

The post-exposure baked wafer W manufactured by performing the same processing as in the first embodiment is moved to the developing unit, and the wafer is fixed to the spin chuck. First, the nozzle 71 is lowered by the vertical movement of the arm. The distance between the projection on the lower surface of the nozzle and the wafer is 2 mm. The developer is supplied from the nozzle 71 while rotating the wafer at 1000 rpm for 2 seconds to spread the developer over the entire wafer, and then the developer is supplied while rotating the wafer at 30 rpm for 2 seconds to form a developer film. (Figure 2
0 (a)). Thereafter, the nozzle 71 is retracted up and down by the up and down movement of the arm. On the other hand, by moving the holding member scan arm 74 along the guide rail 73, the developer holding member 72 is moved to a position facing the wafer. Thereafter, the developer holding member 72 is lowered so as to be in contact with the developer, and development is performed for 45 seconds while rotating the wafer at 30 rpm (FIG. 20B). The development time of 45 seconds is the time from the start of the supply of the developer to the start of the supply of the rinse liquid because the movement time between the nozzle and the developer holding member was 5 seconds and the movement time between the developer holding member and the rinse nozzle was 6 seconds. Is a time set to be 60 seconds in total, and varies depending on the developing conditions. As a result, the developer holding member 72 holds the developer film between the wafer and the developer holding member 72 instead of the developing nozzle shown in FIG.
The same effect as in the first embodiment can be obtained.

Thereafter, as in the first embodiment, the wafer is rotated at 2000 rpm, the developing solution is shaken off, and the rinsing liquid is supplied to stop the development. Thereafter, the wafer is cleaned at the wafer rotation speed of 500 rpm. Finally, the supply of the rinsing liquid is stopped, and the wafer is rotated at 2000 rpm to be dried. Also in this case, the uniformity of the finished dimensions in the plane is 0.
8 nm was obtained for the 225 μmL & S pattern, and the same value as in the first example was obtained. Therefore, it can be seen that the developer is stirred by bringing the developer film and the developer holding member into contact with each other and rotating the wafer at an appropriate number of revolutions, thereby improving in-plane uniformity. In this embodiment, the developer holding member having substantially the same shape as the wafer is used, but the shape of the developer holding member is not limited to this.

The developing solution supply nozzle 71 supplies the developing solution from a large number of small holes arranged in the discharge section in the linear shape, but the nozzle shape is not limited to this shape.
Although the appearance is similar to that of the nozzle used in this embodiment, the discharge portion may be a slit having a minute width, or a structure in which a plurality of elliptical or slit-shaped openings are arranged. For example, Japanese Patent Application Laid-Open No. 7-37788 discloses a case where a discharge unit is formed of a slit (FIG. 22). Further, as disclosed in Japanese Patent Application Laid-Open No. 7-36195, a nozzle that not only supplies the developer just below the nozzle but also allows the developer to flow obliquely backward in the moving direction may be used (FIG. 23). . Further, as disclosed in JP-A-4-124812, a nozzle provided with a thin tube for equalizing the pressure between the liquid reservoir and the slit may be used (FIG. 24). Further, the shape may be a disk type nozzle or a shape in which a plurality of nozzles are arranged in parallel. Further, another type of developer supply nozzle may be used. Further, in this embodiment, the nozzle 71 is fixed and the developing solution is supplied by rotating the wafer. However, the nozzle is fixed and the discharge portion such as a linear nozzle has a length substantially equal to the wafer diameter. May be moved in one direction on the wafer to supply the developing solution to the wafer surface.

In the first embodiment, the supply and the stirring of the developing solution are performed by the disk nozzle. In the second embodiment, the example in which the supply of the developer is performed by the linear nozzle and the stirring of the developer is performed by the developer holding member has been described. However, the present invention is not limited to this, and the supply and stirring of the developing solution can be performed by one nozzle as long as the nozzle has a shape capable of holding the developing solution. For example, a modified example using a linear nozzle will be described below. The nozzle used here is the same as in the second embodiment. But the second
Unlike the embodiment, the distance between the lower end of the nozzle 71 and the upper surface of the wafer W is set to 0.5 mm so that the lower end of the developer supply nozzle 71 and the developer film are in contact with each other. After the developer is supplied onto the wafer to form a developer film in the same manner as in the first embodiment, the wafer is continuously rotated at 30 rpm and development is performed for 50 seconds. Seconds, and the moving time between the nozzle and the rinsing nozzle is 6 seconds, so that the total time from the start of the supply of the developing solution to the start of the supply of the rinsing solution is 60 seconds.
Seconds.) As a result, FIG.
As shown in (c), the developing solution film is held between the bottom surface of the nozzle and the wafer, and the same effect as in the first embodiment can be obtained.

Next, a third embodiment will be described with reference to FIG. As shown in FIG. 9, after supplying the developer, the developer holding member 91 can be reciprocated in parallel with the wafer surface to obtain the stirring effect. FIG. 9 is a perspective plan view of the developing unit and a partial cross-sectional view of a portion along a line AA ′ in the plan view. In this case, for example, a guide rail is provided in the same manner as in FIGS. 7 and 8, and a stirring member is attached to the tip of a moving mechanism that freely moves on the guide rail, and moves between the position facing the wafer and the retracted position. Keep it. Since the stirring member needs to be repeatedly moved in the Y direction at a high speed and move during development, it is moved at a high speed by driving a motor or the like.
Although a stirring plate larger than the wafer is used in FIG. 9, a stirring effect can be obtained even with a smaller shape than the wafer.
Further, in the first to third embodiments, the stirring and the reciprocating motion are performed in parallel with the wafer surface, but one of the wafer and the developer holding member is rotated in parallel with the wafer surface. One may reciprocate parallel to the wafer surface.

Next, a fourth embodiment will be described with reference to FIGS. FIG. 10 is a plan view of a discharge port of a conventional disk nozzle (developer supply nozzle), FIG. 11 is a plan view of a development area of a conventional substrate to be processed through which the discharge port passes, and FIG.
Is a plan view of the discharge port of the disk nozzle of the present invention, FIG.
FIG. 14 is a plan view of the discharge port 1401 of the disk nozzle of the present invention through which the discharge port passes, FIG. 14 is a plan view of the discharge port 1401 of the disk nozzle of the present invention, and FIG.
1 is a plan view of FIG. The dotted lines in FIGS. 10, 12, 14, and 15 are auxiliary lines. In a conventional disk nozzle, discharge ports are arranged concentrically with respect to the center of the nozzle as shown in FIG. However, this arrangement causes deterioration of dimensional uniformity in the substrate to be processed. In the part directly below the discharge port on the substrate to be processed, diffusion occurs between the developer present in the discharge port and the developer upstream thereof, so that a fresher developer is supplied than in other parts and the development is locally performed. Speed increases. Even when the substrate to be processed is rotated with reference to the nozzle center 1001, the ejection ports 1002, 1003, 1
Since 004 passes through a portion 1106 of the substrate 1105 in a concentrated manner, the uniformity cannot be improved. on the other hand,
The discharge ports of the disk nozzle used in the present invention are desirably arranged as shown in FIG. In FIG. 12, the arrangement is such that the passage of the discharge ports 1202, 1203, and 1204 does not concentrate on a partial area during rotation (stirring) during development.

The discharge port 12 when this disk nozzle is used
The passing area of the discharge port near 02 is shifted from the passing area of the adjacent discharge ports 1203 and 1204 as shown in FIG.
Since the frequency of passage through the discharge port is also significantly reduced, the uniformity can be greatly improved. In addition, the discharge port exerts a pressure just below the port when supplying the developing solution, which affects the uniformity. Therefore, it is desirable to reduce the discharge pressure as much as possible to improve the uniformity. Since the amount of the developing solution to be supplied to the substrate is determined, it is desirable to increase the number of discharge ports when supplying the developing solution in the same time, so that the supply amount of the chemical solution per discharge port can be reduced. In the above embodiment, the case where the developing solution supply nozzle and the developing solution holding member are the same is described.
The H difference occurs between a portion immediately below the discharge port and a portion distant from the discharge port.
Therefore, in order to improve the uniformity, the arrangement of the discharge holes of the developer supply nozzle should be changed from the viewpoint described above with reference to FIGS.
4, it is desirable to make FIG. Further, since the stirring is performed on concentric circles, it is desirable to keep the distribution density of the nozzle holes (the number of nozzle holes per unit area) constant regardless of the inside and outside of the diameter. In the above description, the developing solution was discharged from the entire surface by the disk nozzle and the developing solution film was formed while rotating the wafer at a low speed. However, the method of forming the developing solution film is not limited to this. The method of forming a developer film has a mechanism for preventing the occurrence of bubbles in the developer which causes defects after the developer is poured on the wafer and a mechanism for supplying the developer almost simultaneously to the entire surface of the wafer. Is desirable. For example, there are methods such as the following fifth to seventh embodiments.

Next, a fifth embodiment will be described with reference to FIGS. FIG. 16 is a cross-sectional view of a disk nozzle for explaining that development is started by bringing a developing solution film formed by surface tension into contact with a wafer. In this method, a developing solution film is formed on the surface of the disk nozzle using surface tension, and the developing solution is brought into contact with the wafer to start development, so that the developing solution is simultaneously supplied into the wafer surface. Can be. Also, air may be interposed between the surface of the developer film and the surface of the photoresist, but the bubbles formed at this time are sufficiently large bubbles and float on the upper surface of the developer by buoyancy. For this reason, fine bubbles staying on the wafer surface are not generated, and do not lead to generation of defects. In the developing unit, the developer is slightly pushed out from the nozzle hole 1601 by pressurization before the development is started. The developing liquid droplets are connected to the adjacent nozzle holes 1601 by the surface tension to form a developing solution film 1602 on the nozzle surface (FIG. 16). Next, the wafer on which the latent image is formed is raised together with the wafer holder (not shown), and is brought into contact with the developer film 1602 to start development. In this process, the developing solution is instantaneously supplied to the entire area to be processed. Next, the developing solution is supplied from the developing solution supply system through the nozzle hole 1601 and a desired amount of the developing solution is filled while keeping a desired width between the wafer and the nozzle while maintaining the contact between the developing solution and the nozzle.

After the supply of the developing solution, the first to fourth embodiments described above.
The relative movement between the wafer of the present invention and the disk nozzle holding the developing solution described in the embodiment is performed. 60 seconds after the start of development, the disk nozzle is raised, and then a rinsing liquid is supplied to stop the development. After sufficient rinsing, the wafer is spin-dried. Thereafter, post baking is performed at 130 ° C. for 90 seconds, and then the wafer is taken out of the developing unit. In the above description, the wafer was raised and brought into contact with the developer film.
As shown in FIG. 17, the nozzle hole of the disk nozzle may be connected to an air supply system, and after the developing solution film is formed, the air may be supplied to drop the developing solution onto the wafer to start the development. . In the above developing process, after the developing solution film and the wafer come into contact with each other, the developing solution and the disk nozzle are kept in contact with each other, so that a predetermined interval is provided between the wafer and the nozzle, and the developing solution is supplied through the nozzle hole from the developing solution supply system. Although a desired amount of the developing solution is supplied by supplying the developing solution, the developing solution may be supplied with a predetermined width between the wafer and the nozzle after the developing solution film comes into contact with the wafer.

Next, a sixth embodiment will be described with reference to FIG. FIG. 18 is a cross-sectional view illustrating a developing method using a convex disk nozzle in which the center of the circle slightly protrudes. As a method to prevent the generation of bubbles when forming a developer film,
It is also possible to make the shape of the disk nozzle into a convex shape with a slightly raised central portion. According to this method, the air is pushed out from the inside to the outside, and it is possible to prevent the generation of bubbles at the time of liquid filling. First, the wafer on which the latent image has been formed is transported to the developing unit. The disk nozzle 1801 used here has a circular shape when viewed from below, and has a convex shape with a slightly protruding center portion of the circle (FIG. 18A). Disk nozzle 1801
The distance between the wafer and the wafer is set to 2 mm, and the developing solution is supplied onto the wafer (FIG. 18B). At the same time the wafer is 60 rpm
To spread the developer over the wafer surface. The developer is supplied to a position where the disk nozzle 1801 and the developer 1802 are in contact with each other to form a developer film 1802 (FIG. 18C). During the developing process, the relative movement between the wafer of the present invention and the disk nozzle holding the developing solution described in the first to fourth embodiments is performed. Development start 60
After a second, the disk nozzle is raised, and then a rinsing liquid is supplied to stop the development. After sufficient rinsing, the wafer is spin-dried. Thereafter, post baking is performed at 130 ° C. for 90 seconds, and the wafer is taken out of the developing unit.

Since the surface of the disk nozzle has a curvature, the contact portion between the developing solution supplied and the resist surface is spatially released from the central portion of the wafer toward the peripheral portion. Therefore, the air in the gap between the resist and the nozzle is pushed outward, and it is possible to reduce dimensional variations and defects caused by bubbles after the development. In the above example, the developing solution was supplied directly from the nozzle hole onto the wafer. However, after forming the developing solution film on the nozzle surface as in the sixth embodiment, the developing solution was brought into contact with the wafer surface. To start the development. After the formation of the developer film, the developer film formed by supplying air from an air supply mechanism or the like may be dropped on the wafer to start development. Further, the same effect can be obtained by supplying the developing solution while maintaining the nozzle facing surface of the substrate in a convex shape with respect to the nozzle.

Next, a seventh embodiment will be described with reference to FIG. FIG. 19 is a sectional view of a disk nozzle for explaining that a weak vacuum is applied between the disk nozzle and the wafer by using a liquid / gas pump to apply a developing solution. As a method of preventing the generation of bubbles during the supply of the developer, a cover is formed below the disk nozzle to form a space surrounded by the cover, the disk nozzle and the wafer, and the lower part of the cover is connected to a liquid / gas pump. There is a way to put it. When the space starts to be evacuated by the liquid / gas pump, the developing solution in the disk nozzle is supplied onto the wafer, and the developing solution connected to the nozzle hole is pulled out, so that the developing solution fills the entire surface of the wafer almost simultaneously. Can be In addition, since the air is removed by this, a developing solution film in which the generation of bubbles is suppressed is formed on the wafer. A cover 1901 having a height of 2 mm is provided below the disk nozzle, and the cover and the disk nozzle seal the main surface of the wafer by covering the cover 1901 to form a lid. Part of the cover is connected to a liquid / gas pump. When a weak vacuum is started by the liquid / gas pump, the air in the space formed by the wafer, the disk nozzle and the cover is removed, and the developing solution in the disk nozzle is pulled out from the nozzle hole 1902, and the developing solution is filled. Can be When a desired amount of the developing solution is supplied to the gap between the wafer and the disk nozzle, the liquid / gas pump is stopped.

Next, the liquid and gas dual-purpose pump is caused to flow backward so as to enable movement between the cover and the disk nozzle and the wafer, and the present invention described in the first to fourth embodiments described above. The relative movement between the wafer and the disk nozzle holding the developer is performed. 60 seconds after the start of the supply of the developing solution, the disk nozzle is raised, and then the rinsing solution is supplied to stop the development. After sufficient rinsing, the wafer is spin-dried. Thereafter, post baking is performed at 130 ° C. for 90 seconds, and the wafer is taken out of the developing unit. In the above description, the liquid and gas dual-purpose pump is caused to flow backward so as to enable movement between the cover and the disc nozzle and the wafer.However, after the desired amount of the developer is drawn in, the liquid and gas dual-purpose pump is stopped, and the developer is further removed from above. May be sent to float the cover and the disk nozzle, or air may be introduced from a nozzle hole or the like to float the cover and the disk nozzle.

In the above embodiment, the developer film is formed directly on the wafer. However, before forming the developer film, a liquid film such as water that does not start the development is formed, and then the liquid film such as water is formed. The developer film can be formed while shaking off the film. Thereby, further improvement in in-plane uniformity and reduction of defects can be expected. As described above, in each embodiment, a wafer (semiconductor wafer) is used as a substrate to be processed, and the development processing method has been described. However, a substrate to be processed other than the wafer, for example,
The method and apparatus of the present invention can be applied to a liquid crystal display substrate and an exposure mask substrate.

In the above-described embodiment, the developing step of the photosensitive resin pattern has been described as an example. However, the main part of the present invention is to bring the chemical holding member into contact with one end of the chemical in the wet process using the chemical. By moving the holding member or the substrate to be processed, the concentration of the reaction raw material and the reaction product in the chemical solution is made uniform in the substrate surface in a region in contact with the surface of the substrate to be processed, and the in-plane uniformity of the processing is improved. It is to raise. Therefore, the present invention can be applied to a wet etching process and an apparatus for a chrome mask for exposure. In addition, the stirring method of the present invention not only makes the concentration of the chemical solution in the substrate surface uniform, but also reduces the concentration of the reaction product that has accumulated on the surface of the processing substrate and increases the concentration of the raw material of the chemical solution. Can increase the processing speed. Therefore, this method can be applied to the removal of organic substances on the substrate, the removal of the photosensitive resin pattern after etching, and the removal of the natural oxide film on the silicon wafer as described above. Also, if an electrode is attached to the substrate and the chemical solution holding member and a plating solution is used as the chemical solution, the Au
It is also applicable to plating.

[0039]

In the step of treating the substrate with the chemical solution, the chemical solution is brought into contact with the substrate by bringing the chemical solution into contact with the chemical solution holding member and moving one or both of the substrate and the chemical solution holding member during the chemical solution treatment to stir the chemical solution. The concentration of the reaction product and the concentration of the reaction raw material in the chemical solution can be made uniform in the substrate surface, so that the substrate processing can be performed uniformly in the substrate surface. Further, it is possible to prevent the reaction product from staying in the vicinity of the surface of the processing substrate due to the stirring or to prevent the concentration of the reaction raw material from being kept low, so that the processing speed can be improved.

[Brief description of the drawings]

FIG. 1 is a system configuration diagram of a coating and developing apparatus and an exposure machine of the present invention.

FIG. 2 is a cross-sectional view illustrating the overall configuration of a developing unit according to the present invention.

FIG. 3 is a plan view showing the overall configuration of the developing unit of the present invention.

FIG. 4 is a partial perspective plan view of the developing unit of the present invention and a cross-sectional view of a portion taken along line AA ′ of the plan view.

FIG. 5 is a characteristic diagram showing a wafer rotation speed dependency of a variation in finished wafer size according to the present invention.

FIG. 6 is a partial sectional view of the developing unit of the present invention.

FIG. 7 is a cross-sectional view illustrating the overall configuration of the developing unit of the present invention.

FIG. 8 is a plan view showing the overall configuration of the developing unit of the present invention.

FIG. 9 is a perspective plan view of the developing unit of the present invention and a cross-sectional view of a portion taken along line AA ′ of the plan view.

FIG. 10 is a plan view of a discharge port of a conventional disk nozzle.

FIG. 11 is a plan view of a conventional development area of a substrate to be processed.

FIG. 12 is a plan view of a discharge port of the disk nozzle of the present invention.

FIG. 13 is a plan view of a development region of a substrate to be processed according to the present invention.

FIG. 14 is a plan view of a discharge port of the disk nozzle of the present invention.

FIG. 15 is a plan view of a discharge port of the disk nozzle of the present invention.

FIG. 16 is a cross-sectional view of a disk nozzle for explaining a method of starting development by bringing a developing solution film formed by surface tension into contact with a wafer according to the present invention.

FIG. 17 is a sectional view of a disk nozzle for explaining a method of starting development by dropping a developer film formed by surface tension on a wafer surface according to the present invention.

FIG. 18 is a cross-sectional view illustrating a developing method according to the present invention which is performed using a convex disk nozzle in which the center of a circle is slightly traveled.

FIG. 19 is a sectional view of a disk nozzle for explaining a method of applying a weak vacuum between the disk nozzle and the wafer by using the liquid / gas pump of the present invention and applying a developing solution.

FIG. 20 is a perspective view and a cross-sectional view of a wafer for explaining a developing method using the developing unit of the present invention.

FIG. 21 is a cross-sectional view of a nozzle used in the present invention and a plan view as viewed from the lower surface of the nozzle.

FIG. 22 is a sectional view and a side view of a nozzle on a wafer according to the present invention.

FIG. 23 is a sectional view of a nozzle according to the present invention.

FIG. 24 is a perspective view of a nozzle according to the present invention.

[Explanation of symbols]

41, 63, 92 ... wafer, 42, 201 ...
· Spin chucks, 43, 61, 71, 1801 ...
Disk nozzles (developer supply nozzles), 44, 62 ... developer, 72, 91 ... developer holding member, 73, 2
12: guide rail, 74: holding member scan arm 93, 94: liquid outflow prevention member, 95 ...
・ Support member, 96 ・ ・ ・ Wafer chuck, 101 ・
..Cassette station, 102... Processing station, 103... Interface unit, 104.
..Exposure apparatus, 105 ... coating unit, 106
... Developing unit, 107 ... Oven processing unit, 108 ... Cooling, 109 ...
Adhesion, 110 ... alignment, 11
1 ... extension, 112 ... pre-baking, 113 ... post-exposure baking,
114: baking, 202: drive motor, 203: unit bottom plate, 204: flange member, 205: elevating drive means, 206 ...
・ Elevating guide means, 207 ・ ・ ・ Cooling jacket,
208: developer supply nozzle, 209: developer supply pipe, 210, 216: nozzle scan arm,
211 ... Nozzle holder, 213 ... Vertical support member, 214 ... Nozzle retreat position, 215 ... Rinse nozzle, 1001, 1201 ... Nozzle center, 1
002, 1003, 1004, 1401, 1501 ...
・ Chemical solution discharge port, 1105 ・ ・ ・ Developing area of substrate to be processed,
1106... Fast developing area, 1601, 190
2 ... nozzle hole, 1602, 1802 ... developer film, 1901 ... cover.

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[Procedure amendment]

[Submission date] March 8, 1999

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0034

[Correction method] Change

[Correction contents]

Since the surface of the disk nozzle has a curvature, the contact portion between the developing solution supplied and the resist surface is spatially released from the central portion of the wafer toward the peripheral portion. Therefore, the air in the gap between the resist and the nozzle is pushed outward, and it is possible to reduce dimensional variations and defects caused by bubbles after the development. In the above example, the developing solution was supplied directly from the nozzle hole onto the wafer. However, after forming the developing solution film on the nozzle surface in the same manner as in the fifth embodiment, the developing solution was brought into contact with the wafer surface. To start the development. After the formation of the developer film, the developer film formed by supplying air from an air supply mechanism or the like may be dropped on the wafer to start development. Further, the same effect can be obtained by supplying the developing solution while maintaining the nozzle facing surface of the substrate in a convex shape with respect to the nozzle.

Claims (19)

[Claims] After supplying a chemical solution to a main surface of a substrate, bringing the upper surface of the chemical solution into contact with a chemical solution holding member arranged to face the substrate, and holding the chemical solution between the substrate and the chemical solution holding member, A substrate processing method, wherein the substrate main surface is treated with the chemical solution while at least one of the substrate and the chemical solution holding member is moved in parallel with the substrate main surface. 2. The substrate processing method according to claim 1, wherein the chemical liquid holding member is a chemical liquid supply nozzle. 3. A nozzle for supplying a chemical solution to the main surface of the substrate, wherein a disk-shaped nozzle having a plurality of nozzle holes or a discharge portion has a length substantially equal to the diameter of the substrate and is linearly arranged. It is a linear nozzle that supplies a chemical solution from a discharge unit, and supplies the chemical solution while rotating the substrate using this nozzle, or this nozzle is parallel to the upper surface of the substrate that has been left standing using the linear nozzle. 2. The substrate processing method according to claim 1, wherein the chemical solution is supplied while scanning a nozzle. 4. The method according to claim 1, wherein after supplying the chemical liquid to the main surface of the substrate, the chemical liquid holding member is arranged to face the substrate, and the chemical liquid holding member is brought into contact with the surface of the chemical liquid. Substrate processing method. 5. The substrate processing method according to claim 1, wherein the movement parallel to the main surface of the substrate is a reciprocating movement or a rotating movement. 6. The substrate processing method according to claim 5, wherein the rotational movement parallel to the main surface of the substrate fixes the chemical solution holding member and moves the substrate. 7. The substrate processing method according to claim 5, wherein the number of rotations of the rotational movement parallel to the main surface of the substrate is 10 to 50 rpm. 8. The supply of the chemical liquid to the main surface of the substrate, using a chemical liquid supply nozzle for the chemical liquid holding member, forming a single chemical liquid film on a surface of the chemical liquid supply nozzle facing the substrate, 2. The substrate processing method according to claim 1, wherein the liquid is supplied to the main surface of the substrate in a state of the chemical liquid film. 9. The substrate processing method according to claim 8, wherein the chemical is supplied to the entire surface of the substrate almost simultaneously. 10. The substrate processing method according to claim 8, wherein the substrate is supplied with the chemical solution while maintaining a state in which the substrate faces the chemical solution supply nozzle with respect to the nozzle. 11. The substrate processing method according to claim 3, wherein the disk-shaped nozzle having the plurality of nozzle holes has a convex portion at a central portion of a surface facing the substrate. 12. The supply of the chemical solution to the main surface of the substrate,
2. The substrate processing method according to claim 1, wherein a chemical solution supply nozzle is used as the chemical solution holding member, and the pressure is reduced while reducing a space region between the substrate and the chemical solution supply nozzle. 3. 13. The method according to claim 12, wherein the chemical solution is a developer, an etchant,
The substrate processing method according to claim 1, wherein the substrate processing method is any one of a cleaning liquid, a stripping liquid, a film forming liquid, and a plating liquid. 14. The substrate processing method according to claim 1, wherein after performing the processing using the chemical liquid, the chemical liquid is switched to a rinsing liquid to rinse the main surface of the substrate and simultaneously rinse the chemical liquid holding member. Method. 15. A mounting table on which a substrate to be processed is mounted, a chemical solution supply nozzle for supplying a chemical solution to the main surface of the substrate to be processed,
A chemical liquid holding member facing the substrate and arranged so as to be able to contact the upper surface of the chemical liquid, and at least one of the substrate and the chemical liquid holding member is parallel to the substrate main surface while performing the chemical liquid processing. And a mechanism for moving the substrate in a direction. 16. The substrate processing apparatus according to claim 15, wherein the chemical liquid holding member is the chemical liquid supply nozzle. 17. A mechanism for moving at least one of the substrate and the chemical solution holding member in a direction parallel to the main surface of the substrate while performing the chemical solution processing, comprises a horizontal drive unit or a rotary drive unit. The substrate processing apparatus according to claim 15, wherein 18. A plurality of chemical solution discharge ports are arranged on a surface of the chemical solution supply nozzle facing the substrate, and among the chemical solution discharge ports, a chemical solution discharge port adjacent to a moving direction of the chemical solution holding member or the substrate moves. 2. The device according to claim 1, wherein the first and second substrates are arranged so as to pass through different positions on the substrate.
6. The substrate processing apparatus according to 5. 19. The method according to claim 15, wherein the chemical liquid supply nozzle has a plurality of chemical liquid discharge ports, and the plurality of chemical liquid discharge ports are uniformly distributed on the main surface of the substrate. The substrate processing apparatus according to any one of the preceding claims.