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JPH11298289A - Surface acoustic wave device - Google Patents

Surface acoustic wave device

Info

Publication number
JPH11298289A
JPH11298289A JP12013398A JP12013398A JPH11298289A JP H11298289 A JPH11298289 A JP H11298289A JP 12013398 A JP12013398 A JP 12013398A JP 12013398 A JP12013398 A JP 12013398A JP H11298289 A JPH11298289 A JP H11298289A
Authority
JP
Japan
Prior art keywords
line
short
thin
acoustic wave
surface acoustic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12013398A
Other languages
Japanese (ja)
Inventor
Yasuhide Onozawa
康秀 小野澤
Kazuya Yokogawa
一哉 横川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Communication Equipment Co Ltd
Original Assignee
Toyo Communication Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyo Communication Equipment Co Ltd filed Critical Toyo Communication Equipment Co Ltd
Priority to JP12013398A priority Critical patent/JPH11298289A/en
Publication of JPH11298289A publication Critical patent/JPH11298289A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an SAW(surface acoustic wave) device which prevents the generation of static electricity or pyroelectricity by preparing a short circuit thin line of a metallic thin film on the inside of a dicing line to surround the device and using plural thin lines to secure the electrical connection between the metallic thin film thin line and an IDT electrode. SOLUTION: A 2nd short circuit thin line 6 is formed by a metallic thin film on the inside of a 1st short circuit thin line 4. In regard to the line 6, the bus bars and the electrode fingers of IT electrodes 1 and 2 and reflectors 3a and 3b are connected to each other via thin lines 5a to 5d. Then the fingers of electrodes 1 and 2 of individual SAW device elements and the reflectors 3a and 3b are connected to the line 6 via the line 5a to 5d even after the line 6 is cut into the individual SAW device elements along its outside dicing line. Therefore, the distortions of the SAW devices or the pyroelectric charge that is caused by the temperature gradient are short-circuited by the line 6 and a SAW device is never broken by discharge.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は弾性表面波装置に関
し、特にウエハー上で圧電効果あるいは焦電効果によっ
て発生する電荷が、瞬時に放電する際に引き起こすID
T電極指等の破壊を防止した弾性表面波装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device, and more particularly, to an ID generated when electric charges generated by a piezoelectric effect or a pyroelectric effect on a wafer are instantaneously discharged.
The present invention relates to a surface acoustic wave device that prevents destruction of a T electrode finger or the like.

【0002】[0002]

【従来の技術】近年、弾性表面波装置(以下、SAWデ
バイスと称す)は通信分野で広く利用され、高性能、小
型、量産性等の優れた特徴を有することから特に携帯電
話等に多く用いられてその普及の一翼を担っている。図
6(a)は従来のSAWデバイスの一例である縦結合二
重モードSAWフィルタ(以下、二重モードSAWフィ
ルタと称す)素子の構成を示す平面図である。従来の二
重モードSAWフィルタは図6(a)に示すように、圧
電基板26の主面上に表面波の伝搬方向に沿って2つの
IDT電極21、22とその両側にグレーティング反射
器23a、23b(以下、反射器と称す)とを近接して
配置したものである。
2. Description of the Related Art In recent years, surface acoustic wave devices (hereinafter, referred to as SAW devices) have been widely used in the field of communication and have excellent characteristics such as high performance, small size, and mass productivity, and thus are often used especially for mobile phones. Has been playing a part in its spread. FIG. 6A is a plan view showing a configuration of a longitudinally coupled dual mode SAW filter (hereinafter, referred to as a dual mode SAW filter) element which is an example of a conventional SAW device. As shown in FIG. 6A, a conventional dual mode SAW filter has two IDT electrodes 21 and 22 on the main surface of a piezoelectric substrate 26 along the propagation direction of a surface wave and grating reflectors 23a on both sides thereof. 23b (hereinafter, referred to as a reflector).

【0003】図6(a)に示すような二重モードSAW
フィルタの動作は、周知のように、IDT電極21、2
2によって励起される複数の表面波が反射器23a、2
3bの間に閉じ込められ、IDT電極21、22の間で
音響結合を生ずる結果、1次と2次の2の縦共振モード
が強勢に励振され、適当な終端を施すことによりこれら
の2つのモードを利用した二重モードSAWフィルタと
して動作する。
A dual mode SAW as shown in FIG.
The operation of the filter is, as is well known, the IDT electrodes 21, 2 and
Surface waves excited by the reflectors 2a and 2b
3b, acoustic coupling occurs between the IDT electrodes 21 and 22. As a result, the first and second longitudinal resonance modes are strongly excited, and these two modes are formed by appropriate termination. It operates as a dual mode SAW filter using the filter.

【0004】図6に示したSAWデバイスの概略の製造
工程を説明すると、圧電基板からなる所定の大きさのウ
エハーを洗浄装置で十分に洗浄乾燥し、該ウエハーに蒸
着装置等を用いてアルミニウム合金等を蒸着し、アルミ
ニウム合金の金属薄膜を形成する。この金属薄膜の上に
薄いレジスト膜を均一に塗布する。そして、図6(b)
に示すように、IDT電極と反射器と、その周囲を囲む
ダイシングライン上に金属薄膜の短絡細線24と、該短
絡細線24とIDT電極21、22のそれぞれのバスバ
ー、反射器23a、23bのそれぞれのバスバーあるい
は電極指とを電気的に接続する複数の金属薄膜の細線2
5とからなる電極パターンが描かれているガラスマスク
を用いて電極パターンを露光、現像する。ここでダイシ
ングラインとはウエハー上に形成した複数のSAWデバ
イスを個片に切り分ける境界線のことである。前記電極
パターン以外のレジスト膜を剥離すると共に、エッチン
グ手段を用いて不要なアルミニウム膜を除去し、電極パ
ターン上のレジスト膜を剥離して所望の電極パターンを
形成する。この時、IDT電極21、22、反射器23
a、23bを形成する際に同時に形成された金属薄膜の
短絡細線24に沿ってダイシングマシンを用いて切断
し、個片のSAWデバイス素子を得る。この切断工程に
て、ダイシングライン上の短絡細線24は削られて消滅
するから、個片のSAWデバイスとして図6(a)のよ
うな構成のものが得られる。このように製造工程におい
て短絡細線を採用した理由を以下に説明する。
[0006] A schematic manufacturing process of the SAW device shown in FIG. 6 will be described. A wafer of a predetermined size composed of a piezoelectric substrate is sufficiently cleaned and dried by a cleaning device, and the wafer is subjected to aluminum alloying using a vapor deposition device or the like. Is deposited to form a metal thin film of an aluminum alloy. A thin resist film is uniformly applied on the metal thin film. Then, FIG.
As shown in the figure, an IDT electrode and a reflector, a short wire 24 made of a metal thin film on a dicing line surrounding the IDT electrode and a reflector, bus bars of the short wire 24 and the IDT electrodes 21 and 22, and reflectors 23a and 23b, respectively. A plurality of thin metal thin wires electrically connecting the bus bars or electrode fingers
The electrode pattern is exposed and developed using a glass mask on which the electrode pattern of No. 5 is drawn. Here, the dicing line is a boundary line for dividing a plurality of SAW devices formed on a wafer into individual pieces. The resist film other than the electrode pattern is stripped, an unnecessary aluminum film is removed by using an etching means, and the resist film on the electrode pattern is stripped to form a desired electrode pattern. At this time, the IDT electrodes 21 and 22, the reflector 23
By using a dicing machine to cut along the short wires 24 of the metal thin film formed simultaneously with the formation of the a and 23b, individual SAW device elements are obtained. In this cutting step, the short wire 24 on the dicing line is shaved and disappears, so that an individual SAW device having a configuration as shown in FIG. 6A is obtained. The reason why the short-circuited thin wire is employed in the manufacturing process will be described below.

【0005】例えば、圧電基板上に被着したアルミニウ
ム合金膜をエッチングした後に行う洗浄、乾燥の工程で
は、洗浄の際の水分を熱により乾燥しているが、圧電性
基板上に温度勾配が発生するため、圧電材料が有する焦
電性によって圧電基板上に焦電荷が発生する。また、焦
電荷以外に、圧電性基板に応力が加わり、基板内部に歪
みが生ずると基板上に静電荷が発生する。短絡細線が無
い状態ではIDT電極やグレーティング電極の電極指間
において、前記焦電荷または静電荷がスパークして電極
が損傷し、使いものにならなくなるかあるいは、電気化
学反応により電極膜が変質するという不具合が発生す
る。そこで、短絡細線24及び細線25にてIDT電極
やグレーティング電極を短絡し、電荷を中和することに
よりIDT電極指の化学変化による劣化や破損等を防止
することができる。
For example, in a cleaning and drying process performed after etching an aluminum alloy film deposited on a piezoelectric substrate, moisture during the cleaning is dried by heat, but a temperature gradient is generated on the piezoelectric substrate. Therefore, pyroelectricity of the piezoelectric material generates a pyroelectric charge on the piezoelectric substrate. Further, in addition to the pyroelectric charge, when stress is applied to the piezoelectric substrate and distortion occurs inside the substrate, an electrostatic charge is generated on the substrate. In the absence of short-circuited wires, the pyroelectric or electrostatic charge sparks between the electrode fingers of the IDT electrode or the grating electrode, damaging the electrode and rendering it unusable, or altering the electrode film due to electrochemical reactions. Occurs. Therefore, the IDT electrode and the grating electrode are short-circuited by the short wires 24 and 25 to neutralize the electric charge, thereby preventing the IDT electrode fingers from being deteriorated or damaged due to a chemical change.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上記の
SAWデバイス製造工程において、一旦ウエハーから切
り離されたSAWデバイス素子は、図6(a)に示すよ
うにIDT電極21、22及び反射器23a、23bの
電極が短絡細線24から分離されるため、それらの電極
指が同電位に保たれない。その結果、個片のSAWデバ
イス素子に外部からかかる歪みあるいは温度分布の不均
一のために静電気あるいは焦電気が発生し、該電荷が瞬
時に放電する際にIDT電極21、22及び反射器23
a、23bの電極指を破損し、SAWデバイス素子の特
性が劣化するという問題があった。本発明は上記問題を
解決するためになされたものであって、静電気あるいは
焦電気の発生を防止したSAWデバイスを提供すること
を目的とする。
However, in the above-described SAW device manufacturing process, the SAW device elements once separated from the wafer are combined with the IDT electrodes 21, 22 and the reflectors 23a, 23b as shown in FIG. Are separated from the short-circuit wire 24, their electrode fingers are not kept at the same potential. As a result, static electricity or pyroelectricity is generated due to external strain or non-uniform temperature distribution on the individual SAW device elements, and when the charges are instantaneously discharged, the IDT electrodes 21 and 22 and the reflector 23 are generated.
There is a problem that the electrode fingers a and 23b are damaged, and the characteristics of the SAW device element deteriorate. The present invention has been made to solve the above-described problem, and has as its object to provide a SAW device in which generation of static electricity or pyroelectricity is prevented.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に本発明に係る弾性表面波装置の請求項1記載の発明
は、圧電基板上に表面波の伝搬方向に沿ってIDT電極
またはグレーティング電極を配置して構成する表面波デ
バイスにおいて、ダイシングラインの内側に該デバイス
の周囲を囲む金属薄膜の短絡細線を設け、これらの金属
薄膜細線と前記IDT電極とを電気的に接続する複数の
細線を配設したことを特徴とする弾性表面波装置であ
る。請求項2記載の発明は、前記短絡細線もしくは細線
の一部を他の部分より細幅としてその部分の溶断を容易
としたことを特徴とする請求項1記載の弾性表面波装置
である。請求項3記載の発明は、前記短絡細線もしくは
細線の一部をミアンダーラインで置換したことを特徴と
する請求項1または2記載の弾性表面波装置である。
According to a first aspect of the present invention, there is provided a surface acoustic wave device comprising: an IDT electrode or a grating electrode on a piezoelectric substrate along a propagation direction of a surface acoustic wave; In the surface acoustic wave device configured by disposing, a short-circuit thin line of a metal thin film surrounding the periphery of the dicing line is provided inside the dicing line, and a plurality of thin wires for electrically connecting these thin metal thin wires and the IDT electrode are formed. The surface acoustic wave device is provided. The invention according to claim 2 is the surface acoustic wave device according to claim 1, wherein a part of the short-circuited thin line or the thin line is made narrower than another part to facilitate the fusing of the part. According to a third aspect of the present invention, there is provided the surface acoustic wave device according to the first or second aspect, wherein the short wire or a part of the short wire is replaced with a meander line.

【0008】[0008]

【発明の実施の形態】以下本発明を図面に示した実施の
形態に基づいて詳細に説明する。図1(a)は本発明に
係るSAWデバイスを製造する際の電極パターンを二重
モードSAWフィルタを例としてその構成を示す平面
図、同図(b)はウエハー上に多数形成した二重モード
SAWフィルタの電極パターンを示す平面図である。本
発明は図1(a)に示すように圧電基板の主面上に表面
波の伝搬方向に沿って2つのIDT電極1、2とその両
側に反射器3a、3bとを近接して配置すると共に、ダ
イシングライン上に第1の短絡細線4を配設し、該第1
の短絡細線4とIDT電極1、2のそれぞれのバスバ
ー、反射器3a、3bのバスバーあるいは電極指とを電
気的に接続する複数の細線5c、5dを設ける。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail based on an embodiment shown in the drawings. FIG. 1A is a plan view showing the configuration of an electrode pattern when a SAW device according to the present invention is manufactured, taking a dual mode SAW filter as an example, and FIG. FIG. 3 is a plan view showing an electrode pattern of a SAW filter. In the present invention, as shown in FIG. 1A, two IDT electrodes 1, 2 and reflectors 3a, 3b are arranged close to each other on the main surface of the piezoelectric substrate along the propagation direction of the surface acoustic wave. At the same time, a first short wire 4 is arranged on the dicing line,
And a plurality of fine wires 5c and 5d for electrically connecting the short-circuit fine wire 4 to the respective bus bars of the IDT electrodes 1 and 2, the bus bars of the reflectors 3a and 3b, or the electrode fingers.

【0009】さらに、第1の短絡細線4の内側に金属薄
膜による第2の短絡細線6を形成することが本発明の特
徴である。短絡細線6は細線5a〜5dによりIDT電
極1、2及び反射器3a、3bのそれぞれのバスバーや
電極指同士と接続されている。 これらIDT電極1、
2、反射器3a、3b、ダイシングライン4、細線5a
〜5d及び短絡細線6はフォトエッチング手段により同
時に形成される。
Further, it is a feature of the present invention to form a second short-circuit wire 6 made of a metal thin film inside the first short-wire 4. The short wires 6 are connected to the respective bus bars and electrode fingers of the IDT electrodes 1 and 2 and the reflectors 3a and 3b by the thin wires 5a to 5d. These IDT electrodes 1,
2, reflectors 3a, 3b, dicing line 4, fine line 5a
5d and the short-circuit fine line 6 are simultaneously formed by the photo-etching means.

【0010】短絡細線6の外側のダイシングラインに沿
って切断し、図1に示すように個片のSAWデバイス素
子に分離した後も、個片のSAWデバイス素子のIDT
電極1、2及び反射器3a、3bの電極指は複数の細線
5a〜5dを通して短絡細線6と接続されているので、
前記電極指同士を同電位に保持することができる。よっ
て前記SAWデバイス素子に加わる歪みあるいは、温度
勾配の為に発生する焦電荷は短絡細線6により短絡さ
れ、電気的に中和されるため放電による破損は生じな
い。
After cutting along the dicing line outside the short-circuited thin wire 6 and separating it into individual SAW device elements as shown in FIG.
Since the electrode fingers of the electrodes 1 and 2 and the reflectors 3a and 3b are connected to the short-circuit fine line 6 through a plurality of fine lines 5a to 5d,
The electrode fingers can be held at the same potential. Therefore, the strain applied to the SAW device element or the pyroelectric charge generated due to the temperature gradient is short-circuited by the short-circuit fine line 6 and is electrically neutralized, so that damage due to discharge does not occur.

【0011】ところが、図1に示すように細線5a〜5
d、短絡細線6により入出力電極同士あるいは入出力電
極と接地とが短絡された状態では、SAWデバイス素子
として機能しないため、例えば各素子をパッケージにマ
ウントした後に細線5a〜5d、短絡細線6をレーザあ
るいは電流を流してその一部を溶断する。レーザを用い
て切断する手段は格別に説明を要しないと思われるの
で、電流による細線5a〜5d、短絡細線6の溶断手段
を説明する。入出力電極(IDT1−IDT2)間ある
いは、入出力電極IDT1、2と接地間を結ぶ短絡細線
6の一部に、図2(a)、(b)に示すように該短絡細
線6の一部を他の部分の線幅より細くした楔型部分を設
けるか、または細線5a〜5dと短絡細線6との交差部
に図2(c)で示すように、短絡細線6の楔型状の部分
に、細線5a〜5dの線幅を楔型に細くした線をT字状
に接続した構造の部分を設ける。
However, as shown in FIG.
d, In the state where the input / output electrodes are short-circuited with each other or between the input / output electrodes and the ground by the short-circuited thin wires 6, they do not function as SAW device elements. Therefore, for example, after each element is mounted on a package, the thin wires 5a to 5d and the short-circuited thin wires 6 A part of the laser is blown by passing a laser or current. Since it is considered that the means for cutting using a laser does not require special explanation, the means for fusing the thin wires 5a to 5d and the short-circuit thin wire 6 by the current will be described. As shown in FIGS. 2 (a) and 2 (b), a part of the short-circuit wire 6 between the input / output electrodes (IDT1 and IDT2) or a part of the short-circuit wire 6 connecting the input / output electrodes IDT1 and IDT2 and the ground. May be provided with a wedge-shaped portion thinner than the line width of the other portion, or a wedge-shaped portion of the short-circuited thin wire 6 may be provided at the intersection of the thin wires 5a to 5d and the short-circuited thin wire 6, as shown in FIG. Is provided with a portion having a structure in which lines obtained by narrowing the widths of the thin wires 5a to 5d in a wedge shape are connected in a T shape.

【0012】このように細線5a〜5dと短絡細線6と
の一部に他の部分の線幅より細い楔型構造の部分を設け
た上で、入出力電極間、入出力電極と接地間に電流を流
すことにより、細線5a〜5dと短絡細線6との楔型構
造の部分が他の部分の抵抗より大きいためにその部分が
瞬時に発熱して溶断され、入出力電極間、入出力電極と
接地間が開放され、SAWデバイスとして機能できるよ
うになる。
As described above, a part of the thin wires 5a to 5d and the short-circuit thin wire 6 is provided with a wedge-shaped structure thinner than the line width of the other part, and then between the input / output electrodes and between the input / output electrodes and the ground. When a current is applied, the portion of the wedge-shaped structure between the thin wires 5a to 5d and the short-circuit wire 6 is larger than the resistance of the other portions, so that the portion is instantaneously heated and melted. And the ground is opened, and can function as a SAW device.

【0013】図3は本発明に係るSAWデバイスの他の
実施例であり、ダイシングラインの内側であって、ID
T電極1、2及び反射器3a、3bを囲むように配置し
た短絡細線6の一部にミアンダーライン7を採用した例
である。入力電極と出力電極との間、入出力電極と接地
との間にミアンダーライン7を設けることにより、直流
的にはIDT電極1、2及び反射器3a、3bの各電極
指は短絡状態となり、IDT電極1、2及び反射器3
a、3bの電極指は同電位となる。このように短絡され
ている状態で、SAWデバイスに外部からの応力あるい
は温度勾配が生ずることによって静電荷あるいは焦電荷
が発生しても、上記細線5a〜5d、短絡細線6を介し
て電気的に中和されるため、電極指の破損は大幅に軽減
できる。一方、SAWデバイスが動作する高周波ではミ
アンダーラインが電気的にはインダクタンスとなり、S
AWデバイスが扱う高周波電流に対してはそのインピー
ダンスが高インピーダンスを呈するため、ミアンダーラ
インが挿入された部分では電気的には開放状態となる。
従って、個片に切り分けた後、レーザーあるいは電流に
よって短絡細線またはミアンダーラインを切り離す必要
が無くなるという特徴がある。また、ダイシングする前
のウエハーの状態でプローブによる個々のSAWデバイ
ス素子の良否チェックも可能となる。
FIG. 3 shows another embodiment of the SAW device according to the present invention.
This is an example in which a meandering line 7 is used as a part of a short-circuited thin wire 6 arranged so as to surround the T electrodes 1 and 2 and the reflectors 3a and 3b. By providing the meander line 7 between the input electrode and the output electrode and between the input / output electrode and the ground, each electrode finger of the IDT electrodes 1 and 2 and the reflectors 3a and 3b is short-circuited in terms of direct current. , IDT electrodes 1 and 2 and reflector 3
The electrode fingers a and 3b have the same potential. In this short-circuited state, even if static charge or pyroelectric charge is generated by external stress or temperature gradient in the SAW device, the SAW device is electrically connected via the fine wires 5a to 5d and the short-circuit fine wire 6. Since the electrode fingers are neutralized, breakage of the electrode fingers can be significantly reduced. On the other hand, at a high frequency at which the SAW device operates, the meander line becomes an electrical inductance and S
Since the impedance of the high-frequency current handled by the AW device exhibits a high impedance, the portion where the meander line is inserted is electrically open.
Therefore, there is a feature that it is not necessary to cut the short-circuited thin wire or the meander line by laser or current after cutting into individual pieces. In addition, it is possible to check the quality of each SAW device element using a probe in a state of the wafer before dicing.

【0014】図4は本発明に係るSAWデバイスの他の
実施例の構造を示す平面図で、二重モードSAWフィル
タ、それらの周囲を囲む短絡細線6、反射器3a、3b
からの細線6a〜6dを短絡細線6まで延在する構成は
図1と同様であるが、短絡細線6とIDT電極1、2と
の接続をミアンダーライン7を用いて行う。この場合も
ミアンダーライン7が直流的には短絡状態となる。ま
た、高周波的には前述したようにミアンダーライン7が
高インピーダンスを呈するため、入出力電極間、あるい
は入出力電極と接地間が開放に近づくため、短絡細線ま
たはミアンダーラインを切断することなくデバイスとし
ての機能がえられ、ウエハーの状態でプローブによる個
々のSAWデバイス特性をチェックし良否の判定を行う
ことができる。尚、前記短絡細線6の一部にミアンダー
ラインを用いると同時に前記短絡細線6とIDT電極等
とを接続する細線5a〜5dとしてミアンダーラインを
用いたものであってもよいことは云うまでもない。
FIG. 4 is a plan view showing the structure of another embodiment of the SAW device according to the present invention, in which a double-mode SAW filter, a short wire 6 surrounding them, reflectors 3a and 3b are shown.
The configuration in which the thin wires 6a to 6d extending from the first wire 6a to 6d extend to the short wire 6 is the same as that in FIG. Also in this case, the meander line 7 is short-circuited in terms of direct current. Further, in terms of high frequency, since the meander line 7 presents a high impedance as described above, between the input / output electrodes or between the input / output electrodes and the ground approaches an open state, without cutting the short-circuit thin line or the meander line. A function as a device can be obtained, and individual SAW device characteristics can be checked by a probe in a state of a wafer to judge pass / fail. It is needless to say that a meandering line may be used as a part of the short-circuiting thin wire 6 and a meandering line may be used as the thin wires 5a to 5d connecting the short-circuiting thin wire 6 to an IDT electrode or the like. Nor.

【0015】図5はSAWデバイスを2段縦続接続した
二重モードSAWフィルタに適用した実施例で、ダイシ
ングラインの内側に電荷短絡用の短絡細線6が設けられ
ている。この場合二重モードSAWフィルタ間を縦続接
続するための配線パターン8は電流で溶断されることが
ないように、細線5a〜5dや短絡細線6より幅広に形
成する。
FIG. 5 shows an embodiment in which a SAW device is applied to a dual mode SAW filter in which two stages are cascaded, and a short-circuit wire 6 for short-circuiting charges is provided inside a dicing line. In this case, the wiring pattern 8 for cascade connection between the dual mode SAW filters is formed wider than the fine wires 5a to 5d and the short-circuit fine wire 6 so as not to be blown by the current.

【0016】以上、本発明をダイシングライン上に第1
の短絡細線を形成したものを例として説明したが、ダイ
シングラインの内側の第2の短絡細線を形成すれば、第
1の短絡細線を省略してもよい。また、本発明を二重モ
ードSAWフィルタを例にとり説明したが、SAW共振
子、縦結合型あるいは横結合型多重モードSAWフィル
タ、共振子型SAWフィルタ、トランスバーサル型フィ
ルタ等に適用できることは云うまでもない。
As described above, the present invention is applied to a dicing line for the first time.
Although the example in which the short-circuit thin line is formed has been described as an example, the first short-circuit thin line may be omitted if a second short-circuit thin line inside the dicing line is formed. Also, the present invention has been described by taking a dual mode SAW filter as an example. However, it is needless to say that the present invention can be applied to a SAW resonator, a longitudinally-coupled or laterally-coupled multi-mode SAW filter, a resonator-type SAW filter, a transversal-type filter, and the like. Nor.

【0017】[0017]

【発明の効果】本発明は、以上説明したように構成した
ので、ダイシングによりウエハーから切断された後の工
程において外部からの歪み、あるいは温度勾配が原因で
発生する電荷によるIDT電極あるいは反射器の電極指
が破損することが大幅に低減できた。また、短絡細線の
一部に楔型構造を設けるか、あるいは短絡細線と細線と
の交差部をT字楔型構造とすることにより、電流により
容易に溶断することが可能となり、通常のSAWデバイ
ス素子と何ら変わるところはない。このように本発明の
構造を用いることによりSAWデバイス歩留まりを大幅
に改善できるという優れた効果を奏する。
According to the present invention, as described above, the IDT electrode or the reflector due to the electric charge generated due to the external distortion or the temperature gradient in the process after being cut from the wafer by dicing is obtained. Damage to the electrode fingers was significantly reduced. Further, by providing a wedge-shaped structure on a part of the short-circuited thin wire or by forming a T-shaped wedge-shaped structure at the intersection of the short-circuited thin wire and the thin wire, the current can be easily blown by an electric current. There is no difference from the element. As described above, the use of the structure of the present invention has an excellent effect that the yield of SAW devices can be greatly improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)は本発明に係るSAWデバイスの構成を
示す平面図、(b)はウエハー上の電極パターンを示す
図である。
FIG. 1A is a plan view showing a configuration of a SAW device according to the present invention, and FIG. 1B is a diagram showing an electrode pattern on a wafer.

【図2】デバイスを囲む短絡細線あるいは細線の一部に
施した楔型状の部分の拡大図である。
FIG. 2 is an enlarged view of a wedge-shaped portion provided on a short-circuited thin wire or a part of the thin wire surrounding the device.

【図3】本発明の他の実施例の電極パターンを示す平面
図である。
FIG. 3 is a plan view showing an electrode pattern according to another embodiment of the present invention.

【図4】本発明の他の実施例の電極パターンを示す平面
図である。
FIG. 4 is a plan view showing an electrode pattern according to another embodiment of the present invention.

【図5】本発明を2段縦続接続二重モードSAWフィル
タに適用した実施例である。
FIG. 5 is an embodiment in which the present invention is applied to a two-stage cascade-connected dual-mode SAW filter.

【図6】従来のSAWデバイスの例で(a)は個片の電
極パターンを示す図、(b)はウエハー上の電極パター
ンを示す図である。
6A and 6B are diagrams illustrating an example of a conventional SAW device, in which FIG. 6A is a diagram illustrating an individual electrode pattern, and FIG. 6B is a diagram illustrating an electrode pattern on a wafer.

【符号の説明】[Explanation of symbols]

1、2・・IDT電極 3a、3b・・グレーティング反射器 4・・ダイシングライン 5a、5b、5c、5d、・・細線 6・・短絡細線 7・・ミアンダーライン 8・・縦続接続用配線パターン 1, 2, IDT electrode 3a, 3b, grating reflector 4, dicing line 5a, 5b, 5c, 5d, thin line 6, short-circuited thin line 7, meander line 8, cascade connection wiring pattern

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 圧電基板上に表面波の伝搬方向に沿って
IDT電極またはグレーティング電極を配置して構成す
る表面波デバイスにおいて、ダイシングラインの内側に
該デバイスの周囲を囲む金属薄膜の短絡細線を設け、こ
れらの金属薄膜細線と前記IDT電極とを電気的に接続
する複数の細線を配設したことを特徴とする弾性表面波
装置。
In a surface acoustic wave device having an IDT electrode or a grating electrode arranged on a piezoelectric substrate along a propagation direction of a surface acoustic wave, a short-circuited thin wire of a metal thin film surrounding the periphery of the device is provided inside a dicing line. A surface acoustic wave device comprising: a plurality of thin metal wires; and a plurality of thin wires for electrically connecting the metal thin film wires to the IDT electrode.
【請求項2】 前記短絡細線もしくは細線の一部をミア
ンダーラインで置換したことを特徴とする請求項1記載
の弾性表面波装置。
2. The surface acoustic wave device according to claim 1, wherein the short-circuited thin wire or a part of the thin wire is replaced with a meander line.
【請求項3】 前記短絡細線の所要部分を切断したこと
を特徴とする請求項1または2記載の弾性表面波装置。
3. The surface acoustic wave device according to claim 1, wherein a required portion of the short-circuit wire is cut.
【請求項4】 前記短絡細線もしくは細線の一部を他の
部分より細幅としてその部分の溶断を容易としたことを
特徴とする請求項3記載の弾性表面波装置。
4. The surface acoustic wave device according to claim 3, wherein a part of the short-circuited thin line or the thin line is made narrower than another part to facilitate the fusing of the part.
JP12013398A 1998-04-13 1998-04-13 Surface acoustic wave device Pending JPH11298289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12013398A JPH11298289A (en) 1998-04-13 1998-04-13 Surface acoustic wave device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12013398A JPH11298289A (en) 1998-04-13 1998-04-13 Surface acoustic wave device

Publications (1)

Publication Number Publication Date
JPH11298289A true JPH11298289A (en) 1999-10-29

Family

ID=14778794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12013398A Pending JPH11298289A (en) 1998-04-13 1998-04-13 Surface acoustic wave device

Country Status (1)

Country Link
JP (1) JPH11298289A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6486752B1 (en) * 1999-11-04 2002-11-26 Oki Electric Industry Co, Ltd. Surface acoustic wave filter pattern with grounding via connection lines to dicing lines
EP1381156A1 (en) * 2001-04-19 2004-01-14 Matsushita Electric Industrial Co., Ltd. SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURE METHOD, AND ELECTRONIC PART USING IT
EP1414151A4 (en) * 2001-06-21 2005-01-26 Matsushita Electric Ind Co Ltd Surface acoustic wave device, method of manufacturing the device, and electronic component using the device and method
JP2007520949A (en) * 2004-02-02 2007-07-26 エプコス アクチエンゲゼルシャフト COMPONENT HAVING SENSITIVE COMPONENT STRUCTURE AND METHOD FOR MANUFACTURING SAME

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6486752B1 (en) * 1999-11-04 2002-11-26 Oki Electric Industry Co, Ltd. Surface acoustic wave filter pattern with grounding via connection lines to dicing lines
EP1381156A1 (en) * 2001-04-19 2004-01-14 Matsushita Electric Industrial Co., Ltd. SURFACE ACOUSTIC WAVE DEVICE AND ITS MANUFACTURE METHOD, AND ELECTRONIC PART USING IT
EP1381156A4 (en) * 2001-04-19 2004-09-08 Matsushita Electric Ind Co Ltd SURFACE ACOUSTIC WAVE PROCESSING DEVICE AND MANUFACTURING METHOD THEREOF, AND ELECTRONIC COMPONENT USING THE SAME
US6972509B2 (en) 2001-04-19 2005-12-06 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device method of manufacturing the same, and electronic component using the same
EP1414151A4 (en) * 2001-06-21 2005-01-26 Matsushita Electric Ind Co Ltd Surface acoustic wave device, method of manufacturing the device, and electronic component using the device and method
US7064471B2 (en) 2001-06-21 2006-06-20 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device, method of manufacturing the device, and electronic component using the device and method
JP2007520949A (en) * 2004-02-02 2007-07-26 エプコス アクチエンゲゼルシャフト COMPONENT HAVING SENSITIVE COMPONENT STRUCTURE AND METHOD FOR MANUFACTURING SAME
US7998805B2 (en) 2004-02-02 2011-08-16 Epcos Ag Component with sensitive component structures and method for the production thereof
JP4814108B2 (en) * 2004-02-02 2011-11-16 エプコス アクチエンゲゼルシャフト COMPONENT HAVING SENSITIVE COMPONENT STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
DE102004005129B4 (en) 2004-02-02 2018-09-27 Snaptrack, Inc. Device with sensitive component structures and method of manufacture

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