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JPH11289146A - Compound wiring material and production thereof - Google Patents

Compound wiring material and production thereof

Info

Publication number
JPH11289146A
JPH11289146A JP10089038A JP8903898A JPH11289146A JP H11289146 A JPH11289146 A JP H11289146A JP 10089038 A JP10089038 A JP 10089038A JP 8903898 A JP8903898 A JP 8903898A JP H11289146 A JPH11289146 A JP H11289146A
Authority
JP
Japan
Prior art keywords
metal
metal wire
insulating film
wiring
resin material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10089038A
Other languages
Japanese (ja)
Inventor
Tadao Izumi
直生 和泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10089038A priority Critical patent/JPH11289146A/en
Publication of JPH11289146A publication Critical patent/JPH11289146A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Non-Insulated Conductors (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

PROBLEM TO BE SOLVED: To enhance productivity, bonding stability and general purpose properties by shortening the time required for production at the time of flip-chip bonding where a wiring pattern on a substrate is bonded with a semiconductor element through a metallic material, e.g. solder. SOLUTION: The wiring material 1 comprises an insulating film 2 of resin material for die bonding, e.g. epoxy or polyimide, and a plurality of metal wires 3 of wiring metal, e.g. solder or gold, arranged in parallel while being supported by the insulating film 2. The metal wires 3 are exposed, by about 1/5-1/4 of the diameter thereof, from the surface and rear of the insulating film 2. The wiring material 1 is formed into a sheet or a ribbon and used while being cut freely in the lateral or longitudinal direction to include an arbitrary number and length of the metal wires 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体素子と基板
上の配線パターンを接続する複合配線材及びその製造方
法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composite wiring material for connecting a semiconductor element and a wiring pattern on a substrate, and a method for manufacturing the same.

【0002】[0002]

【従来の技術】図7は、従来のインナーバンプを用いて
フリップチップ接合を行った半導体装置を示す断面図で
ある。図において、4は半導体素子、5は基板、6は基
板5上に形成された配線パターン、7は半導体素子4と
配線パターン6を接合する半田等の金属材料よりなるイ
ンナーバンプ、8は封止材、9はアウターボールをそれ
ぞれ示している。一般に、従来のフリップチップ接合で
は、半導体素子4と基板5上の配線パターン6を接合す
る際に、溶融が容易な半田等の金属材料でインナーバン
プ7を形成し、加熱、溶融させることにより、電気的な
接合を得ていた。
2. Description of the Related Art FIG. 7 is a cross-sectional view showing a semiconductor device in which flip chip bonding is performed by using a conventional inner bump. In the figure, 4 is a semiconductor element, 5 is a substrate, 6 is a wiring pattern formed on the substrate 5, 7 is an inner bump made of a metal material such as solder for joining the semiconductor element 4 and the wiring pattern 6, and 8 is a sealing. Reference numeral 9 denotes an outer ball. Generally, in the conventional flip chip bonding, when the semiconductor element 4 and the wiring pattern 6 on the substrate 5 are bonded, the inner bumps 7 are formed of a metal material such as solder which is easily melted, and the inner bumps 7 are heated and melted. Electrical connection had been obtained.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、図7に
示すような構造の場合、インナーバンプ7となる金属材
料は、一個ずつ形成され、金属の個片として基板5、あ
るいは半導体素子4上に一時的に固定された後に圧接、
溶融による電気的接合が行われるため、製造に時間を要
し、生産性が低いという問題があった。また、半田等よ
りなるインナーバンプ7のみによる接合では、接合安定
性が低いという問題もあった。
However, in the case of the structure shown in FIG. 7, the metal material to be the inner bumps 7 is formed one by one, and is temporarily formed on the substrate 5 or the semiconductor element 4 as a piece of metal. After being fixed in place,
Since electric bonding is performed by melting, there is a problem that time is required for production and productivity is low. In addition, there is a problem that bonding stability is low in the case of bonding using only the inner bumps 7 made of solder or the like.

【0004】このような問題を解消するために、例えば
特開平5−29390号公報では、図8に示すように、
絶縁性のフィルム材16に貫通穴を設け、半田ボール1
7を埋め込む等して、二次元的にインナーバンプが配さ
れたフィルム状の複合配線材が提案されている。また、
特開平5−206143号公報では、図9に示すよう
に、ポリイミド樹脂等からなる絶縁性フィルム18の表
裏面に貫通した金属体19が離脱可能な状態で保持され
た転写バンプ形成用の複合フィルムが提案されている。
これらの複合配線材及び複合フィルムによれば、複数個
の金属材料の同時接合が可能であり、さらに特開平5−
29390号公報で提案された複合配線材を用いた場
合、半導体素子と基板との隙間がフィルム材16によっ
て接合されるため、接合安定性が向上する。しかしなが
ら、上記の複合配線材及び複合フィルムは、製造工程が
複雑であり、汎用性に乏しいという問題があった。
In order to solve such a problem, for example, in Japanese Patent Laid-Open No. 5-29390, as shown in FIG.
A through hole is provided in the insulating film material 16 so that the solder ball 1
For example, a film-shaped composite wiring member in which inner bumps are arranged two-dimensionally by embedding 7 is proposed. Also,
Japanese Patent Application Laid-Open No. 5-206143 discloses a composite film for forming a transfer bump in which a metal body 19 penetrating through an insulating film 18 made of a polyimide resin or the like is detachably held on the front and back surfaces as shown in FIG. Has been proposed.
According to these composite wiring materials and composite films, simultaneous joining of a plurality of metal materials is possible.
In the case where the composite wiring material proposed in Japanese Patent No. 29390 is used, the gap between the semiconductor element and the substrate is joined by the film material 16, so that the joining stability is improved. However, the above-described composite wiring material and composite film have a problem that the manufacturing process is complicated and versatility is poor.

【0005】本発明は、上記のような問題点を解消する
ためになされたもので、基板上の配線パターンと半導体
素子を半田等の金属材料で接合するフリップチップ接合
において、製造に要する時間を短縮し、生産性を向上さ
せるとともに、接合安定性が高く、且つ汎用性の高い複
合配線材及びその製造方法を提供するものである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems. In flip-chip bonding in which a wiring pattern on a substrate and a semiconductor element are bonded with a metal material such as solder, the time required for manufacturing is reduced. An object of the present invention is to provide a composite wiring material which is shortened, improves productivity, has high joining stability, and is highly versatile, and a method for manufacturing the same.

【0006】[0006]

【課題を解決するための手段】本発明に係わる複合配線
材は、半田または金等の配線用金属よりなり、互いに平
行に配置された複数本の金属線材と、ダイボンド用の樹
脂材料よりなり、金属線材を保持する絶縁性フィルムを
備え、金属線材は、絶縁性フィルムの表裏面より露出し
ているものである。また、金属線材は、直径の約1/5
〜1/4が絶縁性フィルムの表裏面それぞれより露出し
ているものである。さらに、任意の本数及び長さの金属
線材を含むように、幅方向及び長さ方向に自在にカット
されて用いられるものである。
The composite wiring material according to the present invention is made of a wiring metal such as solder or gold, and is made of a plurality of metal wires arranged in parallel with each other and a resin material for die bonding. An insulating film for holding the metal wire is provided, and the metal wire is exposed from the front and back surfaces of the insulating film. The metal wire is about 1/5 of the diameter.
1 / is exposed from each of the front and back surfaces of the insulating film. Furthermore, it is used by being cut freely in the width direction and the length direction so as to include metal wires of an arbitrary number and length.

【0007】また、本発明に係わる複合配線材の製造方
法は、半田または金等の配線用金属よりなる金属線材
を、金属線材の直径の1/4程度を保持する溝が複数本
平行に設けられた仮固定材に配置する工程と、金属線材
が配置された仮固定材に、溶融したダイボンド用の樹脂
材料を塗布し、樹脂材料が硬化する前に、スキージによ
り金属線材上部が直径の1/4程度露出するように、余
分な樹脂材料を掻き取る工程と、金属線材相互間に残っ
た樹脂材料を硬化させ、絶縁性フィルムを形成する工程
を含んで製造するようにしたものである。また、半田ま
たは金等の配線用金属よりなる金属線材を、金属線材の
直径の1/4程度を保持する溝が複数本平行に設けられ
た仮固定材に配置する工程と、仮固定材に配置された金
属線材相互間に、溶融したダイボンド用の樹脂材料を、
金属線材上部が直径の1/4程度露出するように細径ノ
ズルより塗布する工程と、金属線材相互間の樹脂材料を
硬化させ、絶縁性フィルムを形成する工程を含んで製造
するようにしたものである。
Further, in the method of manufacturing a composite wiring material according to the present invention, a plurality of metal wires made of a metal for wiring such as solder or gold are provided in parallel with a plurality of grooves which hold about 4 of the diameter of the metal wire. Disposing the melted resin material for die bonding on the temporary fixing material on which the metal wire is disposed, and before the resin material is cured, the upper portion of the metal wire with a squeegee has a diameter of 1 mm. The manufacturing method includes a step of scraping an excess resin material so as to expose about / 4 and a step of curing the resin material remaining between the metal wires to form an insulating film. A step of arranging a metal wire made of a metal for wiring such as solder or gold on a temporary fixing material provided with a plurality of grooves parallel to each other and holding about 溝 of the diameter of the metal wire; Between the placed metal wires, a molten resin material for die bonding,
It is manufactured to include a step of applying from a small-diameter nozzle such that an upper portion of the metal wire is exposed to about 1/4 of a diameter, and a step of curing an resin material between the metal wires to form an insulating film. It is.

【0008】[0008]

【発明の実施の形態】実施の形態1.以下に、本発明の
実施の形態を図について説明する。図1は、本発明の実
施の形態1である複合配線材を示す斜視図である。図に
おいて、1は本実施の形態による複合配線材であり、2
はエポキシまたはポリイミド等のダイボンド用の樹脂材
料よりなる絶縁性フィルム、3は絶縁性フィルム2に保
持され、半田または金等の配線用金属よりなり、互いに
平行に配置された複数本の金属線材である。金属線材3
は、直径の約1/5〜1/4が絶縁性フィルム2の表裏
面それぞれより露出している。また、複合配線材1はシ
ート状またはリボン状に形成されており、任意の本数及
び長さの金属線材3を含むように、幅方向及び長さ方向
に自在にカットされて用いられるものである。本実施の
形態による図1に示す複合配線材1は、金属線材3を4
本含むようにカットされたリボン状のもので、絶縁性フ
ィルム2の厚みは例えば10〜30μm、金属線材3の
直径は例えば20〜50μm、金属線材3相互の間隔は
例えば30〜100μmのものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing a composite wiring member according to the first embodiment of the present invention. In the figure, reference numeral 1 denotes a composite wiring member according to the present embodiment,
Is an insulating film made of a resin material for die bonding such as epoxy or polyimide, 3 is held by the insulating film 2, is made of a metal for wiring such as solder or gold, and is a plurality of metal wires arranged in parallel with each other. is there. Metal wire 3
, About 5〜 to の of the diameter is exposed from each of the front and back surfaces of the insulating film 2. The composite wiring member 1 is formed in a sheet shape or a ribbon shape, and is used by being freely cut in the width direction and the length direction so as to include an arbitrary number and length of metal wires 3. . The composite wiring member 1 according to the present embodiment shown in FIG.
It is a ribbon shape cut so as to include the book, the thickness of the insulating film 2 is, for example, 10 to 30 μm, the diameter of the metal wire 3 is, for example, 20 to 50 μm, and the interval between the metal wires 3 is, for example, 30 to 100 μm. is there.

【0009】図2(a)は、図1に示したリボン状の複
合配線材1を所望のサイズにカットした状態を示す斜視
図である。図において1aは、4本の金属線材3を含
み、金属線材3の長さ方向に例えば30〜100μm程
度の幅でカットされた複合配線材である。このようにカ
ットされた複合配線材1aを、図2(b)に示すよう
に、基板5上に形成された配線パターン6に対応させて
そのまま配したり、さらに分割して配したりすることが
できる。なお、図2(b)中、1bは複合配線材1aを
2分割した複合配線材を示している。
FIG. 2A is a perspective view showing a state in which the ribbon-shaped composite wiring member 1 shown in FIG. 1 has been cut into a desired size. In the figure, reference numeral 1a denotes a composite wiring material including four metal wires 3 and cut in a length direction of the metal wires 3 with a width of, for example, about 30 to 100 μm. As shown in FIG. 2 (b), the composite wiring material 1a cut in this way may be arranged as it is in accordance with the wiring pattern 6 formed on the substrate 5, or may be further divided and arranged. Can be. In FIG. 2B, reference numeral 1b denotes a composite wiring member obtained by dividing the composite wiring member 1a into two parts.

【0010】以下に、本実施の形態による複合配線材1
aを用いたフリップチップ接合プロセスを図3を用いて
説明する。図において、4は半導体素子、5は基板、6
は基板5上に形成された配線パターン、10はヒートブ
ロック、11はピックアップツールである。まず、配線
パターン6に対応するようにカットされた複合配線材1
aを、ピックアップツール11により基板5上に配し、
例えば1〜10Kg程度で数秒間の荷重を加え、ダイボ
ンド用樹脂材料よりなる絶縁性フィルム2の加熱による
粘着性を利用して仮固定する。ダイボンド用樹脂のガラ
ス転移温度は70〜150度であるので、この時のヒー
トブロック10の温度は120〜200度とする(図3
(a))。次に、半導体素子4を配線パターン6に合わ
せて配し、50〜100g程度で10〜20秒間程度の
荷重を加え、圧接、加熱することで金属線材3部の溶
融、接合を促し、絶縁性フィルム2によるダイボンドと
金属線材3による配線作業を同時に行う。金属線材3が
半田の場合、半田の溶融温度は190〜220度である
ので、この時のヒートブロック10の温度は200〜2
30度とする(図3(b))。以上のようなプロセスに
より、フリップチップ接合が完了する(図3(c))。
Hereinafter, the composite wiring member 1 according to the present embodiment will be described.
The flip chip bonding process using “a” will be described with reference to FIG. In the figure, 4 is a semiconductor element, 5 is a substrate, 6
Is a wiring pattern formed on the substrate 5, 10 is a heat block, and 11 is a pickup tool. First, the composite wiring material 1 cut so as to correspond to the wiring pattern 6
a is arranged on the substrate 5 by the pickup tool 11,
For example, a load of about 1 to 10 kg is applied for several seconds, and the insulating film 2 made of the resin material for die bonding is temporarily fixed by utilizing the adhesiveness by heating. Since the glass transition temperature of the resin for die bonding is 70 to 150 degrees, the temperature of the heat block 10 at this time is 120 to 200 degrees (FIG. 3).
(A)). Next, the semiconductor element 4 is arranged in accordance with the wiring pattern 6, a load of about 50 to 100 g is applied for about 10 to 20 seconds, and pressure welding and heating are performed to promote the melting and joining of the 3 parts of the metal wire, thereby improving the insulating property. Die bonding with the film 2 and wiring work with the metal wire 3 are performed simultaneously. When the metal wire 3 is solder, the melting temperature of the solder is 190 to 220 degrees, so that the temperature of the heat block 10 at this time is 200 to 2 degrees.
The angle is set to 30 degrees (FIG. 3B). By the above process, the flip chip bonding is completed (FIG. 3C).

【0011】なお、図1では、金属線材3が等間隔で配
された複合配線材1を示したが、金属線材3の配列方法
はこれに限るものではなく、例えば図4に示すように金
属線材3がL1 、L2 の2通りの間隔で配置された複合
配線材1cでも良く、同様の効果を奏する。また、本実
施の形態では、複合配線材1を1枚で用いた例を示した
が、例えば基板5上に接合される半導体素子4の高さを
確保したい場合等には、複合配線材1を2〜3枚重ねて
用いることもできる。従来のフリップチップ接合(図
7)では、インナーバンプ7は溶融してしまうため高さ
の制御は難しかったが、本実施の形態による複合配線材
1によれば、金属線材3相互間にダイボンド用樹脂より
なる絶縁性フィルム2が用いられているため、樹脂を介
することによって高さ制御が行い易いという効果があ
る。
Although FIG. 1 shows the composite wiring member 1 in which the metal wires 3 are arranged at equal intervals, the arrangement method of the metal wires 3 is not limited to this. For example, as shown in FIG. The composite wire 1c in which the wire 3 is disposed at two intervals of L 1 and L 2 may be used, and the same effect is obtained. Further, in the present embodiment, an example in which one composite wiring member 1 is used has been described. However, for example, when it is desired to secure the height of the semiconductor element 4 bonded on the substrate 5, the composite wiring member 1 is used. Can also be used by overlapping two or three sheets. In the conventional flip chip bonding (FIG. 7), the height control was difficult because the inner bumps 7 were melted. However, according to the composite wiring material 1 according to the present embodiment, the die bonding between the metal wires 3 was performed. Since the insulating film 2 made of resin is used, there is an effect that height control can be easily performed by interposing the resin.

【0012】以上のように、本実施の形態による複合配
線材1を用いることにより、半導体素子4と基板5上の
配線パターン6を接合する際に、複数本の金属線材3の
同時接合が行え、従来のインナーバンプ7を用いる場合
に比べ、製造に要する時間が短縮され、生産性が向上す
る。また、金属線材3を保持する絶縁性フィルム2とし
てダイボンド用の樹脂材料を用いることにより、金属線
材3による配線と絶縁性フィルム2によるダイボンドを
同時に行うことができ、フリップチップ接合時の接合安
定性が向上する。さらに、接合する電極及び配線パター
ンの個数、大きさに応じて、シート状またはリボン状の
複合配線材1を幅方向、長さ方向に自在にカットでき、
複数枚を組み合わせて並べたり、厚さ方向に重ねて用い
ることもできるため、汎用性が高いという利点がある。
As described above, by using the composite wiring material 1 according to the present embodiment, when the semiconductor element 4 and the wiring pattern 6 on the substrate 5 are bonded, a plurality of metal wires 3 can be simultaneously bonded. As compared with the case where the conventional inner bump 7 is used, the time required for manufacturing is reduced, and the productivity is improved. In addition, by using a resin material for die bonding as the insulating film 2 holding the metal wire 3, the wiring by the metal wire 3 and the die bonding by the insulating film 2 can be performed simultaneously, and the bonding stability at the time of flip chip bonding is achieved. Is improved. Furthermore, according to the number and size of the electrodes and the wiring patterns to be joined, the sheet-shaped or ribbon-shaped composite wiring material 1 can be cut freely in the width direction and the length direction,
Since a plurality of sheets can be combined and arranged, or can be used by overlapping in the thickness direction, there is an advantage that versatility is high.

【0013】実施の形態2.図5(a)は、本発明の実
施の形態2である複合配線材の製造方法を示す模式図で
ある。図において、12は金属線材3を仮固定し、金属
線材3の露出を確保するための仮固定材で、例えばワッ
クス等よりなる。13は製造時に平坦度を確保するため
の基材、14は金属線材3上の樹脂を除去するためのス
キージであり、例えばゴム板や樹脂板等の柔らかい材料
よりなるものである。なお、図中、同一、相当部分には
同一符号を付し、説明を省略する。
Embodiment 2 FIG. FIG. 5A is a schematic view illustrating a method for manufacturing a composite wiring member according to Embodiment 2 of the present invention. In the figure, reference numeral 12 denotes a temporary fixing material for temporarily fixing the metal wire 3 and ensuring exposure of the metal wire 3 and is made of, for example, wax or the like. Reference numeral 13 denotes a base material for ensuring flatness during manufacturing, and reference numeral 14 denotes a squeegee for removing resin on the metal wire 3 and is made of a soft material such as a rubber plate or a resin plate. In the drawings, the same or corresponding parts have the same reference characters allotted, and description thereof will be omitted.

【0014】本実施の形態による複合配線材1の製造方
法を説明する。まず、半田または金等の配線用金属より
なる金属線材3を、金属線材3の直径の1/4程度を保
持する溝が複数本平行に設けられた仮固定材12に配置
する。この時、仮固定材12は平坦な基材13上に設置
されている。次に、金属線材3が配置された仮固定材1
2に溶融したダイボンド用の樹脂材料を塗布し、樹脂材
料が硬化する前に、スキージ14により金属線材3上部
が直径の1/4程度露出するように、余分な樹脂材料を
掻き取る。その後、金属線材3相互間に残った樹脂材料
を硬化させ、絶縁性フィルム2を形成し、仮固定材12
を除去することにより、表裏面に金属線材3の一部が露
出したシート状の複合配線材1が完成する。なお、樹脂
材料を掻き取る際に、図5(b)に示すような、金属線
材3の外形に沿った溝を有するスキージ14aを用いて
もよい。本実施の形態によれば、仮固定材12を必要に
応じて変更するだけで、金属線材3の本数、径、間隔等
が異なる複合配線材1を容易に作成することができ、生
産性が高いというメリットがある。
A method for manufacturing the composite wiring member 1 according to the present embodiment will be described. First, a metal wire 3 made of a metal for wiring such as solder or gold is arranged on a temporary fixing material 12 provided with a plurality of grooves provided in parallel with each other to hold about 1 / of the diameter of the metal wire 3. At this time, the temporary fixing material 12 is placed on the flat base material 13. Next, the temporary fixing material 1 on which the metal wire 3 is disposed
2 is coated with a melted resin material for die bonding, and before the resin material is cured, an excess resin material is scraped off by a squeegee 14 so that the upper portion of the metal wire 3 is exposed to about 1/4 of the diameter. Thereafter, the resin material remaining between the metal wires 3 is cured to form the insulating film 2 and the temporary fixing material 12 is formed.
Is removed, the sheet-like composite wiring member 1 in which a part of the metal wire 3 is exposed on the front and back surfaces is completed. When scraping the resin material, a squeegee 14a having a groove along the outer shape of the metal wire 3 as shown in FIG. 5B may be used. According to the present embodiment, the composite wiring material 1 having different numbers, diameters, intervals, and the like of the metal wires 3 can be easily formed only by changing the temporary fixing material 12 as necessary, and productivity can be improved. It has the advantage of being expensive.

【0015】実施の形態3.図6は、本発明の実施の形
態3である複合配線材の製造方法を示す模式図である。
図において、15は絶縁性フィルム2を形成する樹脂材
料を塗布するための細径ノズルである。なお、図中、同
一、相当部分には同一符号を付し、説明を省略する。
Embodiment 3 FIG. 6 is a schematic view illustrating a method for manufacturing a composite wiring member according to Embodiment 3 of the present invention.
In the figure, reference numeral 15 denotes a small-diameter nozzle for applying a resin material forming the insulating film 2. In the drawings, the same or corresponding parts have the same reference characters allotted, and description thereof will be omitted.

【0016】本実施の形態による複合配線材1の製造方
法を説明する。まず、半田または金等の配線用金属より
なる金属線材3を、金属線材3の直径の1/4程度を保
持する溝が複数本平行に設けられた仮固定材12に配置
する。この時、仮固定材12は平坦な基材13上に設置
されている。次に、仮固定材12に配置された金属線材
3相互間に、溶融したダイボンド用の樹脂材料を、金属
線材3上部が直径の1/4程度露出するように細径ノズ
ル15より塗布する。その後、金属線材3相互間の樹脂
材料を硬化させ、絶縁性フィルム2を形成し、仮固定材
12を除去することにより、表裏面に金属線材3の一部
が露出したシート状の複合配線材1が完成する。本実施
の形態によれば、樹脂材料を細径ノズル15より塗布し
た後、掻き取る工程がないので、樹脂材料の塗布量を制
御でき、絶縁性フィルム2の膜厚制御が行い易いという
メリットがある。
A method for manufacturing the composite wiring member 1 according to the present embodiment will be described. First, a metal wire 3 made of a metal for wiring such as solder or gold is arranged on a temporary fixing material 12 provided with a plurality of grooves provided in parallel with each other to hold about 1 / of the diameter of the metal wire 3. At this time, the temporary fixing material 12 is placed on the flat base material 13. Next, a molten resin material for die bonding is applied between the metal wires 3 arranged on the temporary fixing material 12 from the small-diameter nozzle 15 so that the upper portion of the metal wires 3 is exposed to about 4 of the diameter. Thereafter, the resin material between the metal wires 3 is cured, the insulating film 2 is formed, and the temporary fixing material 12 is removed, thereby forming a sheet-like composite wiring material in which a part of the metal wires 3 is exposed on the front and back surfaces. 1 is completed. According to the present embodiment, there is no scraping step after the resin material is applied from the small-diameter nozzle 15, so that the amount of the resin material applied can be controlled and the thickness of the insulating film 2 can be easily controlled. is there.

【0017】[0017]

【発明の効果】以上のように、本発明における複合配線
材によれば、半田または金等の配線用金属よりなり互い
に平行に配置された複数本の金属線材をダイボンド用の
樹脂材料よりなる絶縁性フィルムで保持しているので、
半導体素子と基板上の配線パターンを接合する際に、複
数本の金属線材の同時接合が行え、生産性が向上する。
また、金属線材による配線と絶縁性フィルムによるダイ
ボンドを同時に行うことができ、接合安定性が向上す
る。
As described above, according to the composite wiring material of the present invention, a plurality of metal wires made of a wiring metal such as solder or gold and arranged in parallel with each other are insulated by a resin material for die bonding. Since it is held with a conductive film,
When joining a semiconductor element and a wiring pattern on a substrate, a plurality of metal wires can be joined at the same time, thereby improving productivity.
In addition, the wiring using the metal wire and the die bonding using the insulating film can be performed simultaneously, and the bonding stability is improved.

【0018】さらに、接合する電極及び配線パターンの
個数、大きさに応じて、シート状またはリボン状の複合
配線材を幅方向、長さ方向に自在にカットでき、複数枚
を組み合わせて並べたり、厚さ方向に重ねて用いること
もできるため、汎用性が高いという利点がある。
Furthermore, according to the number and size of the electrodes and wiring patterns to be joined, a composite wiring material in the form of a sheet or ribbon can be cut freely in the width direction and the length direction. Since it can also be used in the thickness direction, there is an advantage that versatility is high.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施の形態1である複合配線材を示
す斜視図である。
FIG. 1 is a perspective view showing a composite wiring member according to a first embodiment of the present invention.

【図2】 本発明の実施の形態1である複合配線材を所
望のサイズにカットした状態を示す斜視図である。
FIG. 2 is a perspective view showing a state where the composite wiring member according to the first embodiment of the present invention is cut into a desired size.

【図3】 本発明の実施の形態1である複合配線材を用
いたフリップチップ接合プロセスを説明する断面図であ
る。
FIG. 3 is a cross-sectional view illustrating a flip-chip bonding process using the composite wiring material according to the first embodiment of the present invention.

【図4】 本発明の実施の形態1である別のタイプの複
合配線材を示す斜視図である。
FIG. 4 is a perspective view showing another type of composite wiring member according to the first embodiment of the present invention.

【図5】 本発明の実施の形態2である複合配線材の製
造方法を示す模式図である。
FIG. 5 is a schematic view illustrating a method for manufacturing a composite wiring material according to a second embodiment of the present invention.

【図6】 本発明の実施の形態3である複合配線材の製
造方法を示す模式図である。
FIG. 6 is a schematic view illustrating a method for manufacturing a composite wiring material according to Embodiment 3 of the present invention.

【図7】 従来のインナーバンプを用いてフリップチッ
プ接合を行った半導体装置を示す断面図である。
FIG. 7 is a cross-sectional view showing a semiconductor device in which flip chip bonding is performed using a conventional inner bump.

【図8】 従来の複合配線材の構造を示す斜視図であ
る。
FIG. 8 is a perspective view showing a structure of a conventional composite wiring member.

【図9】 従来の転写バンプ形成用の複合フィルムを示
す断面図である。
FIG. 9 is a sectional view showing a conventional composite film for forming a transfer bump.

【符号の説明】[Explanation of symbols]

1、1a、1b、1c 複合配線材、2 絶縁性フィル
ム、3 金属線材、4 半導体素子、5 基板、6 配
線パターン、7 インナーバンプ、8 封止材、9 ア
ウターボール、10 ヒートブロック、11 ピックア
ップツール、12 仮固定材、13 基材、14、14
a スキージ、15 細径ノズル、16 フィルム材、
17 半田ボール、18 絶縁性フィルム、19 金属
体。
1, 1a, 1b, 1c Composite wiring material, 2 insulating film, 3 metal wire material, 4 semiconductor element, 5 substrate, 6 wiring pattern, 7 inner bump, 8 sealing material, 9 outer ball, 10 heat block, 11 pickup Tool, 12 Temporary fixing material, 13 Base material, 14, 14
a squeegee, 15 small diameter nozzle, 16 film material,
17 solder balls, 18 insulating film, 19 metal body.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 半田または金等の配線用金属よりなり、
互いに平行に配置された複数本の金属線材と、ダイボン
ド用の樹脂材料よりなり、上記金属線材を保持する絶縁
性フィルムを備え、上記金属線材は、上記絶縁性フィル
ムの表裏面より露出していることを特徴とする複合配線
材。
1. A wiring metal such as solder or gold,
A plurality of metal wires arranged in parallel with each other and a resin material for die bonding, comprising an insulating film holding the metal wire, wherein the metal wire is exposed from the front and back surfaces of the insulating film. A composite wiring material characterized by that:
【請求項2】 金属線材は、直径の約1/5〜1/4が
絶縁性フィルムの表裏面それぞれより露出していること
を特徴とする請求項1記載の複合配線材。
2. The composite wiring material according to claim 1, wherein about 1/5 to 1/4 of the diameter of the metal wire is exposed from each of the front and back surfaces of the insulating film.
【請求項3】 任意の本数及び長さの金属線材を含むよ
うに、幅方向及び長さ方向に自在にカットされて用いら
れることを特徴とする請求項1または請求項2に記載の
複合配線材。
3. The composite wiring according to claim 1, wherein the composite wiring is used by being cut freely in a width direction and a length direction so as to include an arbitrary number and length of metal wires. Wood.
【請求項4】 半田または金等の配線用金属よりなる金
属線材を、上記金属線材の直径の1/4程度を保持する
溝が複数本平行に設けられた仮固定材に配置する工程、 上記金属線材が配置された仮固定材に、溶融したダイボ
ンド用の樹脂材料を塗布し、上記樹脂材料が硬化する前
に、スキージにより上記金属線材上部が直径の1/4程
度露出するように、余分な上記樹脂材料を掻き取る工
程、 上記金属線材相互間に残った上記樹脂材料を硬化させ、
絶縁性フィルムを形成する工程を含むことを特徴とする
複合配線材の製造方法。
4. A step of arranging a metal wire made of a metal for wiring such as solder or gold on a temporary fixing material provided with a plurality of parallel grooves each holding about の of the diameter of the metal wire; A molten resin material for die bonding is applied to the temporary fixing material on which the metal wire is disposed, and before the resin material is hardened, an extra squeegee is used to expose the upper portion of the metal wire to about 1/4 of the diameter. Scraping the resin material, curing the resin material remaining between the metal wires,
A method for producing a composite wiring material, comprising a step of forming an insulating film.
【請求項5】 半田または金等の配線用金属よりなる金
属線材を、上記金属線材の直径の1/4程度を保持する
溝が複数本平行に設けられた仮固定材に配置する工程、 上記仮固定材に配置された上記金属線材相互間に、溶融
したダイボンド用の樹脂材料を、上記金属線材上部が直
径の1/4程度露出するように細径ノズルより塗布する
工程、 上記金属線材相互間の上記樹脂材料を硬化させ、絶縁性
フィルムを形成する工程を含むことを特徴とする複合配
線材の製造方法。
5. A step of arranging a metal wire made of a metal for wiring such as solder or gold on a temporary fixing material provided with a plurality of parallel grooves each holding about を of a diameter of the metal wire. A step of applying a molten die-bonding resin material from a small-diameter nozzle between the metal wires disposed on the temporary fixing material so that the upper portion of the metal wire is exposed to about 1/4 of the diameter; Curing the resin material in between to form an insulating film.
JP10089038A 1998-04-01 1998-04-01 Compound wiring material and production thereof Pending JPH11289146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10089038A JPH11289146A (en) 1998-04-01 1998-04-01 Compound wiring material and production thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10089038A JPH11289146A (en) 1998-04-01 1998-04-01 Compound wiring material and production thereof

Publications (1)

Publication Number Publication Date
JPH11289146A true JPH11289146A (en) 1999-10-19

Family

ID=13959733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10089038A Pending JPH11289146A (en) 1998-04-01 1998-04-01 Compound wiring material and production thereof

Country Status (1)

Country Link
JP (1) JPH11289146A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319002A (en) * 2005-05-10 2006-11-24 Nippon Steel Corp Semiconductor packaging body, semiconductor packaging body semi-finished product, and manufacturing method thereof
CN107431294A (en) * 2015-03-20 2017-12-01 迪睿合株式会社 Anisotropic conductive film and connecting structure body
JP2018006576A (en) * 2016-07-01 2018-01-11 三菱電機株式会社 Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006319002A (en) * 2005-05-10 2006-11-24 Nippon Steel Corp Semiconductor packaging body, semiconductor packaging body semi-finished product, and manufacturing method thereof
CN107431294A (en) * 2015-03-20 2017-12-01 迪睿合株式会社 Anisotropic conductive film and connecting structure body
JP2018006576A (en) * 2016-07-01 2018-01-11 三菱電機株式会社 Semiconductor device

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