JPH1126638A - Ceramic package for flip chip mounting - Google Patents
Ceramic package for flip chip mountingInfo
- Publication number
- JPH1126638A JPH1126638A JP18390397A JP18390397A JPH1126638A JP H1126638 A JPH1126638 A JP H1126638A JP 18390397 A JP18390397 A JP 18390397A JP 18390397 A JP18390397 A JP 18390397A JP H1126638 A JPH1126638 A JP H1126638A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- chip mounting
- solder
- flip
- external terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明はフリップチップ実装
されるセラミックパッケージに関し、より詳しくは、高
速ロジックLSI等を搭載するために使用されるPGA
(Pin Grid Array)、BGA(Ball
Grid Array)及びMCM(Multi C
hip Module)などの高密度多端子セラミック
パッケージに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic package mounted on a flip chip, and more particularly, to a PGA used for mounting a high-speed logic LSI or the like.
(Pin Grid Array), BGA (Ball
Grid Array) and MCM (Multi C)
The present invention relates to a high-density multi-terminal ceramic package such as a hip module.
【0002】[0002]
【従来の技術】近年、ICは高集積化が進み、ICの外
部端子数として1000以上のものが現われている。同
時にIC製造プロセスの微細化も進んでいるため、IC
の外部端子数の増大に比べて、ICの寸法増大は緩やか
である。このことはICの外部端子ピッチ(間隔)を狭
めることになる。2. Description of the Related Art In recent years, ICs have been highly integrated and more than 1,000 external terminals have appeared. At the same time, the miniaturization of the IC manufacturing process is progressing.
In comparison with the increase in the number of external terminals, the size of the IC is gradually increased. This reduces the pitch (interval) of the external terminals of the IC.
【0003】従来から盛用されてきたICの実装方法で
あるワイヤーボンディングは、外部端子をICの外周に
配置する必要がある。例えば10mm角のICに100
μmピッチで外部端子を形成すると、約400個の外部
端子が形成できる。この方法の端子ピッチの下限は10
0μm弱であり、このため、あまり多くの外部端子を取
り出すことができないという欠点があった。[0003] Wire bonding, which is a method of mounting ICs that has been widely used, requires external terminals to be arranged on the outer periphery of the IC. For example, 100mm for a 10mm square IC
When external terminals are formed at a pitch of μm, about 400 external terminals can be formed. The lower limit of the terminal pitch in this method is 10
It is slightly less than 0 μm, so that there is a drawback that too many external terminals cannot be taken out.
【0004】近年、これを解決する方法として、外部端
子をアレイ状に配置したフリップチップ実装が使われ始
めている。例えば10mm角のICに250μmピッチ
でIC全面を用い外部端子を形成すると、約1600個
の外部端子が形成できる。このようにフリップチップ実
装はワイヤーボンディングに比べて、外部端子ピッチが
広がるにも関わらず、多数の外部端子を形成することが
できるという特徴を持つ。しかし、さらに多数の外部端
子を形成するためには、外部端子ピッチを狭めることが
必要となる。In recent years, flip-chip mounting in which external terminals are arranged in an array has begun to be used as a method for solving this problem. For example, when external terminals are formed on a 10 mm square IC at a pitch of 250 μm using the entire surface of the IC, about 1600 external terminals can be formed. As described above, flip chip mounting has a feature that a large number of external terminals can be formed in spite of a wider external terminal pitch than wire bonding. However, in order to form more external terminals, it is necessary to reduce the external terminal pitch.
【0005】フリップチップ接続には様々な接続材料が
使用されているが、一般的にはハンダボールを用いる場
合が多い。ICあるいはパッケージの対向する外部端子
上にハンダバンプを形成して、仮接続し、リフロー炉を
通してはんだを溶かして接続するのである。Although various connection materials are used for flip chip connection, solder balls are generally used in many cases. Solder bumps are formed on opposing external terminals of an IC or a package, temporarily connected, and solder is melted and connected through a reflow furnace.
【0006】この場合、溶融したはんだが飛沫し、隣接
する外部端子あるいは外部端子間に引き出された配線と
短絡してしまうというはんだブリッジという現象が実装
歩留低下の要因となる。又、電圧を印加して使用してい
る間にはんだのマイグレーションが発生し、短絡不良と
なる可能性もある。従って、あまり外部端子ピッチを狭
めることはできないという問題があった。又、これらの
問題を解決するために、パッケージ表層にはフリップチ
ップ実装用の外部端子のみを形成し、配線は全て内部で
形成することが一般的に行われている。しかし、この方
法はビアを多数形成したセラミック積層数を増大させる
ことになり、結果としてコスト高を招いていた。In this case, a phenomenon called a solder bridge, in which the molten solder splashes and short-circuits with adjacent external terminals or wiring drawn between the external terminals, causes a reduction in mounting yield. In addition, there is a possibility that solder migration may occur during use while applying a voltage, resulting in a short circuit failure. Therefore, there is a problem that the external terminal pitch cannot be reduced too much. In order to solve these problems, generally, only external terminals for flip-chip mounting are formed on the package surface layer, and all wirings are generally formed internally. However, this method increases the number of stacked ceramic layers in which a large number of vias are formed, resulting in an increase in cost.
【0007】[0007]
【発明が解決しようとする課題】このように従来はフリ
ップチップ実装用セラミックパッケージにおいて外部端
子ピッチを狭める要求に対して、妥当な解決方法がなか
った。本発明は上記課題に鑑みなされたものであり、安
価な方法によってはんだブリッジ及びはんだマイグレー
ションを抑え、歩留が低下することがなく狭ピッチのフ
リップチップ実装用セラミックパッケージを提供するこ
とを目的としている。As described above, conventionally, there has been no appropriate solution to the demand for narrowing the external terminal pitch in a flip-chip mounting ceramic package. The present invention has been made in view of the above problems, and has as its object to provide a narrow-pitch flip-chip mounting ceramic package that suppresses solder bridges and solder migration by an inexpensive method and does not reduce yield. .
【0008】[0008]
【課題を解決するための手段】上述したはんだブリッジ
及びはんだマイグレーションが発生する確率は、導体間
距離が短いほど高くなる。従って、これを抑えるには導
体間距離を広げなければならない。一方で外部端子の狭
ピッチ化要求もある。外部端子ピッチを狭め、導体間距
離を広げることがこの問題の解決策となる。その方法は
平面的な距離(外部端子ピッチ)よりも外部端子間のパ
ッケージ表面上の距離(導体間距離)を広げることであ
る。すなわち、パッケージ表面に3次元的な凹凸を形成
することである。The probability of the occurrence of the above-mentioned solder bridge and solder migration increases as the distance between the conductors decreases. Therefore, to suppress this, the distance between conductors must be increased. On the other hand, there is also a demand for a narrow pitch of the external terminals. Reducing the pitch of the external terminals and increasing the distance between conductors is a solution to this problem. The method is to increase the distance on the package surface (distance between conductors) between external terminals rather than the planar distance (external terminal pitch). That is, three-dimensional irregularities are formed on the package surface.
【0009】そこで本発明はアレイ状に配置された外部
端子を有する半導体素子がフリップチップ実装されるセ
ラミックパッケージにおいて、外部端子間にフリップチ
ップ実装後もハンダ部から離開状態になるセラミック誘
電体のダムを形成したことを特徴とするフリップチップ
実装用セラミックパッケージとした。上記セラミック誘
電体のダムは印刷技術又はグリーンシート積層技術によ
り形成する。又、該ダムには配線を内層化することがで
きる。Accordingly, the present invention provides a ceramic package in which semiconductor elements having external terminals arranged in an array are flip-chip mounted, and a ceramic dielectric dam which is separated from the solder portion even after flip-chip mounting between the external terminals. And a ceramic package for flip chip mounting. The ceramic dielectric dam is formed by a printing technique or a green sheet laminating technique. Also, the dam can be provided with an inner layer of wiring.
【0010】[0010]
【発明の実施の形態】上記構造の本発明のフリップチッ
プ実装用セラミックパッケージによれば、ダムによって
ハンダブリッジ及びマイグレーションの発生を防止し、
はんだブリッジ及びマイグレーションによって歩留を低
下させることなく、外部端子間ピッチを低減でき、多数
の外部端子を取り出すことができる。According to the ceramic package for flip-chip mounting of the present invention having the above structure, the occurrence of solder bridge and migration is prevented by the dam.
The pitch between external terminals can be reduced, and a large number of external terminals can be taken out without lowering the yield due to solder bridges and migration.
【0011】通常フリップチップ実装に使用されるハン
ダバンプの高さは100μm程度であり、それ以下の高
さのセラミックのダムを形成することになる。セラミッ
クのダムは、外部端子以外の部分に形成する。セラミッ
クのダムの形成方法としては、印刷法及びグリーンシー
ト積層法が挙げられる。いずれの方法も安価であり、容
易に形成できる。The height of a solder bump usually used for flip-chip mounting is about 100 μm, and a ceramic dam having a height less than 100 μm is formed. The ceramic dam is formed in a portion other than the external terminals. As a method for forming the ceramic dam, a printing method and a green sheet laminating method can be used. Either method is inexpensive and can be easily formed.
【0012】通常フリップチップ実装される多層セラミ
ックパッケージのIC接続側表面には外部端子用パッド
のみが形成され、配線はない。配線はビアで接続された
内層で全て行われている。これはハンダと配線の短絡を
防止するためであるが、この方法では表層にも配線を形
成した場合に比べて積層数が1層増えることになる。
又、増加した層には多数のビアが形成されておりコスト
高になる。本発明によれば表層の外部端子間に配線形成
が可能であり、1層低減できる。又、表面の配線はセラ
ミックのダムでマスクするため不良の心配はない。Usually, only external terminal pads are formed on the IC connection side surface of a multilayer ceramic package mounted by flip chip mounting, and there is no wiring. The wiring is all performed in the inner layer connected by the via. This is to prevent a short circuit between the solder and the wiring. However, in this method, the number of layers increases by one layer as compared with the case where the wiring is also formed on the surface layer.
In addition, a large number of vias are formed in the increased layer, which increases the cost. According to the present invention, wiring can be formed between external terminals on the surface layer, and the number of layers can be reduced by one. Also, since the wiring on the surface is masked by a ceramic dam, there is no fear of failure.
【0013】[0013]
【実施例】以下では本発明の実施例をフリップチップ実
装用多層セラミックPGAを例に挙げ、製造方法から説
明する。まず、アルミナ粉末、焼結助剤、バインダー樹
脂、キシレン等の溶剤及びその他の添加剤を混合してス
ラリーを調製する。次に該スラリーをドクターブレード
法により、ポリエステルシート等の上にシート状に塗布
し、これを乾燥させることでセラミックグリーンシート
を作製する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to a manufacturing method using a multilayer ceramic PGA for flip chip mounting as an example. First, a slurry is prepared by mixing alumina powder, a sintering aid, a binder resin, a solvent such as xylene, and other additives. Next, the slurry is applied in a sheet shape on a polyester sheet or the like by a doctor blade method, and dried to produce a ceramic green sheet.
【0014】次に該セラミックグリーンシートを所定寸
法に切断し、パッケージ各層に応じた穴開け加工処理を
施した後、タングステン等の高融点金属を主成分とする
導体ペーストを所定のパターンに印刷するとともに、ビ
アホールとなる貫通孔には前記導体ペーストを充填し、
この様な処理が施されたセラミックグリーンシートを数
〜十数枚積層する。セラミックのダムをグリーンシート
法で積層する場合は、この時積層する。印刷法で形成す
る場合は、積層後、印刷する。Next, the ceramic green sheet is cut into a predetermined size, and a punching process is performed in accordance with each layer of the package. Then, a conductor paste mainly containing a high melting point metal such as tungsten is printed in a predetermined pattern. At the same time, the conductive paste is filled into a through hole serving as a via hole,
Several to several tens of ceramic green sheets subjected to such treatment are laminated. When the ceramic dams are laminated by the green sheet method, they are laminated at this time. When forming by a printing method, printing is performed after lamination.
【0015】次に不活性ガス雰囲気中で加熱処理をする
ことによりセラミックグリーンシート中の樹脂及び可塑
剤等の有機成分を分解、消失させ、その後焼成すること
により、多層セラミック基板を製造する。該セラミック
基板には信号層、電源層、接地層等の導体層が形成され
るとともに、ビアホールも形成されている。次に該多層
セラミック基板に外部接続端子であるピンを接合し、そ
の後、Ni及び金メッキを施す。図1はこの様にして製
造された実施例に係る多層セラミックPGAの断面を模
式的に示した断面図である。Next, by heating in an inert gas atmosphere, organic components such as a resin and a plasticizer in the ceramic green sheet are decomposed and eliminated, and then fired to produce a multilayer ceramic substrate. On the ceramic substrate, conductor layers such as a signal layer, a power supply layer, and a ground layer are formed, and via holes are also formed. Next, pins serving as external connection terminals are joined to the multilayer ceramic substrate, and then Ni and gold plating are performed. FIG. 1 is a cross-sectional view schematically showing a cross section of the multilayer ceramic PGA according to the example manufactured in this way.
【0016】この多層セラミックPGA1はLSI2の
搭載面とピン3、4、5が反対の面側にある、キャビテ
ィアップと呼ばれる構造のパッケージである。LSI2
の外部端子はPGA1と、ハンダ6、7、8で実装され
ている。PGA1の表層には配線(信号線)9、10、
11とそれらを覆うセラミックのダム12、13、14
が形成されている。又、PGA1の内部構造は、信号線
15を配線した信号層、接地層16及び電源層17から
なり、ビア18、19、20によって必要な接続が図ら
れている。The multilayer ceramic PGA 1 is a package having a structure called “cavity up” in which the mounting surface of the LSI 2 and the pins 3, 4, and 5 are on opposite sides. LSI2
Are mounted with PGA1 and solders 6, 7, and 8. Wirings (signal lines) 9, 10,
11 and the ceramic dams 12, 13, 14 covering them
Are formed. The internal structure of the PGA 1 includes a signal layer on which the signal line 15 is wired, a ground layer 16 and a power supply layer 17, and necessary connections are made by vias 18, 19, and 20.
【0017】図示するようにセラミックのダム12、1
3、14が形成されているため、はんだブリッジ及びマ
イグレーションが発生しにくい構造となっており、外部
端子ピッチを挾めることができる。又、ダムの下に配線
(信号線)9、10、11を表層に形成することも可能
である。As shown, ceramic dams 12, 1
Since the layers 3 and 14 are formed, the structure is such that solder bridges and migration hardly occur, and the pitch of the external terminals can be narrowed. Further, wirings (signal lines) 9, 10, and 11 can be formed on the surface layer below the dam.
【0018】次に比較例を図2に示す。PGA1の表層
には外部端子のみを形成する従来の方法を示している。
図示するように、実施例ではPGA1の表層に配線でき
た信号線9、10、11を内層で形成されている。具体
的には信号線21を配線する信号層と信号線22を配線
する信号層である。このため1層増加している。又、増
加した1層はビア23、24等を多数形成する必要があ
り、コスト高になる。さらにPGA1の厚みも増してし
まう。なお、図2において図1と同一部分は同一符号を
付してある。以上の結果より明らかなように実施例に係
るフリップチップ実装用セラミックPGA1の場合に
は、はんだブリッジ及びマイグレーションを防止しなが
ら、外部端子ピッチを狭めることができ、しかも安価に
提供できる。Next, a comparative example is shown in FIG. A conventional method of forming only external terminals on the surface of PGA1 is shown.
As shown in the figure, in the embodiment, signal lines 9, 10, and 11 that can be wired on the surface layer of PGA1 are formed in inner layers. Specifically, a signal layer for wiring the signal lines 21 and a signal layer for wiring the signal lines 22. For this reason, it is increased by one layer. In addition, the increased one layer needs to form a large number of vias 23, 24, etc., which increases the cost. Further, the thickness of PGA1 also increases. In FIG. 2, the same parts as those in FIG. 1 are denoted by the same reference numerals. As is apparent from the above results, in the case of the ceramic PGA1 for flip-chip mounting according to the embodiment, the pitch of external terminals can be reduced while preventing solder bridges and migration, and can be provided at a low cost.
【0019】[0019]
【発明の効果】以上詳述したように本発明に係るフリッ
プチップ実装用セラミックパッケージにあっては、外部
端子間にセラミックのダムをグリーンシート法あるいは
印刷法によって形成することによって、はんだブリッジ
及びマイグレーションによる歩留低下を防止できると共
に、表層にも信号線を形成することができるようにな
り、積層数低減に寄与する。しかも成熟したプロセスを
用いるため安価でもある。As described in detail above, in the ceramic package for flip-chip mounting according to the present invention, the solder bridge and the migration are formed by forming a ceramic dam between the external terminals by a green sheet method or a printing method. As a result, it is possible to prevent a decrease in yield and to form a signal line on the surface layer, which contributes to a reduction in the number of stacked layers. Moreover, it is inexpensive because it uses a mature process.
【図1】本発明の実施例に係るフリップチップ実装用セ
ラミックPGAの断面を模式的に示した断面図である。FIG. 1 is a cross-sectional view schematically showing a cross section of a flip-chip mounting ceramic PGA according to an embodiment of the present invention.
【図2】比較例に係るフリップチップ実装用セラミック
PGAの断面を模式的に示した断面図である。FIG. 2 is a cross-sectional view schematically showing a cross section of a flip-chip mounting ceramic PGA according to a comparative example.
1 PGA 2 LSI 3,4,5 ピン 6,7,8 ハンダ 9,10,11 配線(信号線) 12,13,14 (セラミックの)ダム 15 信号線 16 接地線 17 電源層 18,19,20 ビア DESCRIPTION OF SYMBOLS 1 PGA 2 LSI 3,4,5 Pin 6,7,8 Solder 9,10,11 Wiring (signal line) 12,13,14 (Ceramic) dam 15 Signal line 16 Ground line 17 Power supply layer 18,19,20 Via
Claims (4)
半導体素子がフリップチップ実装されるセラミックパッ
ケージにおいて、外部端子間にフリップチップ実装後も
ハンダ部から離開した状態になるセラミック誘電体のダ
ムを形成したことを特徴とするフリップチップ実装用セ
ラミックパッケージ。In a ceramic package in which semiconductor elements having external terminals arranged in an array are flip-chip mounted, a ceramic dielectric dam which is separated from a solder portion even after flip-chip mounting is formed between the external terminals. A flip-chip mounting ceramic package characterized by being formed.
り形成されている請求項1記載のフリップチップ実装用
セラミックパッケージ。2. The flip chip mounting ceramic package according to claim 1, wherein the ceramic dielectric dam is formed by a printing technique.
ト積層技術により形成されている請求項1記載のフリッ
プチップ実装用セラミックパッケージ。3. The ceramic package for flip chip mounting according to claim 1, wherein the ceramic dielectric dam is formed by a green sheet laminating technique.
化されている請求項1,2,3のいずれかに記載のフリ
ップチップ実装用セラミックパッケージ。4. The ceramic package for flip-chip mounting according to claim 1, wherein a wiring is formed in the dam of the ceramic dielectric in an inner layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18390397A JPH1126638A (en) | 1997-07-09 | 1997-07-09 | Ceramic package for flip chip mounting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18390397A JPH1126638A (en) | 1997-07-09 | 1997-07-09 | Ceramic package for flip chip mounting |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1126638A true JPH1126638A (en) | 1999-01-29 |
Family
ID=16143839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18390397A Pending JPH1126638A (en) | 1997-07-09 | 1997-07-09 | Ceramic package for flip chip mounting |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1126638A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173616A (en) * | 2005-12-22 | 2007-07-05 | Kyocera Corp | Electronic component mounting substrate and electronic device |
KR100782483B1 (en) | 2006-01-19 | 2007-12-05 | 삼성전자주식회사 | Package board with internal terminal wiring and semiconductor package adopting it |
CN100380649C (en) * | 2001-02-01 | 2008-04-09 | 埃普科斯股份有限公司 | Substrate for electric component and method for production thereof |
JPWO2015170539A1 (en) * | 2014-05-08 | 2017-04-20 | 株式会社村田製作所 | Resin multilayer substrate and manufacturing method thereof |
-
1997
- 1997-07-09 JP JP18390397A patent/JPH1126638A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100380649C (en) * | 2001-02-01 | 2008-04-09 | 埃普科斯股份有限公司 | Substrate for electric component and method for production thereof |
JP2007173616A (en) * | 2005-12-22 | 2007-07-05 | Kyocera Corp | Electronic component mounting substrate and electronic device |
KR100782483B1 (en) | 2006-01-19 | 2007-12-05 | 삼성전자주식회사 | Package board with internal terminal wiring and semiconductor package adopting it |
US7745922B2 (en) | 2006-01-19 | 2010-06-29 | Samsung Electronics Co., Ltd. | Package board having internal terminal interconnection and semiconductor package employing the same |
USRE46666E1 (en) | 2006-01-19 | 2018-01-09 | Samsung Electronics Co., Ltd. | Package board having internal terminal interconnection and semiconductor package employing the same |
JPWO2015170539A1 (en) * | 2014-05-08 | 2017-04-20 | 株式会社村田製作所 | Resin multilayer substrate and manufacturing method thereof |
US10362672B2 (en) | 2014-05-08 | 2019-07-23 | Murata Manufacturing Co., Ltd. | Resin multilayer substrate and method of manufacturing the same |
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