JPH11251865A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH11251865A JPH11251865A JP4803798A JP4803798A JPH11251865A JP H11251865 A JPH11251865 A JP H11251865A JP 4803798 A JP4803798 A JP 4803798A JP 4803798 A JP4803798 A JP 4803798A JP H11251865 A JPH11251865 A JP H11251865A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- acoustic wave
- surface acoustic
- excitation electrode
- ground electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000005284 excitation Effects 0.000 claims abstract description 27
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
(57)【要約】
【課題】 通過帯域内のフィルタ特性を向上させるとと
もに、小型化,低背化,及び軽量化が可能な弾性表面波
装置を提供すること。
【解決手段】 圧電基板1上に弾性表面波を発生させる
励振電極(2)を設けた弾性表面波素子Tを、励振電極
(2)の配設面を下側に絶縁基板4上に載置して成り、
絶縁基板4内に励振電極(2)と接続される接地電極5
を励振電極(2)と対向させた状態で設けるとともに、
励振電極(2)と接地電極5との距離Dが、D>S/
(1.75×104 ×λ)を満足するようにした。ただ
し、S:弾性表面波素子の電極総面積、λ:弾性表面波
の波長である。
(57) [Problem] To provide a surface acoustic wave device capable of improving the filter characteristics in a pass band and reducing the size, height, and weight. SOLUTION: A surface acoustic wave element T provided with an excitation electrode (2) for generating a surface acoustic wave on a piezoelectric substrate 1 is placed on an insulating substrate 4 with the surface on which the excitation electrode (2) is disposed below. Then
Ground electrode 5 connected to excitation electrode (2) in insulating substrate 4
Is provided facing the excitation electrode (2),
When the distance D between the excitation electrode (2) and the ground electrode 5 is D> S /
(1.75 × 10 4 × λ). Here, S is the total area of the electrodes of the surface acoustic wave element, and λ is the wavelength of the surface acoustic wave.
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば自動車電話
及び携帯電話等の移動体無線機器に内蔵される共振器及
び周波数帯域フィルタとして好適な弾性表面波装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device suitable as a resonator and a frequency band filter incorporated in a mobile radio device such as an automobile telephone and a portable telephone.
【0002】[0002]
【従来の技術】従来の一般的な弾性表面波(Surface Ac
oustic Wave 、以下SAWと略す)フィルタの概略断面
図を図10及び図11に示す。図10に示すSAWフィ
ルタJ1は、圧電基板31上に弾性表面波を発生させる
励振電極32、及び励振電極32に接続された入出力電
極パッド等から成るSAW素子を、圧電基板31の下面
側を後記するパッケージに載置したものである。すなわ
ち、上記SAW素子は、絶縁性の下基板35、枠体3
6、及び蓋体37等から成るパッケージ内に収容され、
SAW素子側の入出力電極パッド38とパッケージ側に
形成された入出力パッド33とがワイヤー34により接
続されている。2. Description of the Related Art Conventional general surface acoustic waves (Surface Ac
FIG. 10 and FIG. 11 are schematic cross-sectional views of a oustic wave (hereinafter abbreviated as SAW) filter. A SAW filter J1 shown in FIG. 10 includes a SAW element including an excitation electrode 32 for generating a surface acoustic wave on a piezoelectric substrate 31, an input / output electrode pad connected to the excitation electrode 32, and the like. It is mounted on a package described later. That is, the SAW element includes the insulating lower substrate 35 and the frame 3
6, and a package consisting of a lid 37 and the like,
The input / output electrode pads 38 on the SAW element side and the input / output pads 33 formed on the package side are connected by wires 34.
【0003】また、図11に示すSAWフィルタJ2
は、いわゆるフリップチップ法を適用したものであり、
励振電極32を設けた側の圧電基板31の面を下側にし
てパッケージ内に収容したものであり、SAW素子の励
振電極32はパッケージ側の入出力パッド33と半田バ
ンプ等の接続体39により電気的に接続したものであ
る。Further, a SAW filter J2 shown in FIG.
Is based on the so-called flip chip method,
The piezoelectric substrate 31 on which the excitation electrode 32 is provided is housed in a package with the surface of the piezoelectric substrate 31 facing down. The excitation electrode 32 of the SAW element is connected to the input / output pad 33 on the package side and a connecting body 39 such as a solder bump. They are electrically connected.
【0004】[0004]
【発明が解決しょうとする課題】現在、移動体通信分野
の通信機器の小型化,低背化,軽量化に対し、機器内に
搭載される電子部品の高性能化が要求されるとともに、
機器と同様にいっそうの小型化,低背化,軽量化が要求
されている。At present, in order to reduce the size, height and weight of communication devices in the field of mobile communication, electronic components mounted in the devices are required to have higher performance.
As with equipment, further miniaturization, lower profile, and lighter weight are required.
【0005】ところが、例えば図1に示すタイプのSA
Wフィルタでは、全体のサイズ、特にパッケージ高さが
ワイヤ張りのループ高さとこの寸法交差を考慮して決定
されるため、低背化は全く期待できない(例えば空洞部
高さだけで0.3 〜0.6mm 程度必要となる)。However, for example, an SA of the type shown in FIG.
In the W filter, the overall size, particularly the package height, is determined in consideration of the loop height of the wire tension and this dimensional intersection, so that a reduction in height cannot be expected at all (for example, 0.3 to 0.6 mm only in the height of the cavity). Degree is required).
【0006】このため、フリップチップ法を用いたタイ
プが低背化を実現できるものとして期待されているが、
図12にそのフィルタ特性(|S21|)を示すように、
通信機器で使用される高周波の通過帯域内において、満
足する特性が得られていないのが現状である。すなわ
ち、図12のE部に示すように、通過帯域の特性の歪み
が大きく、いわゆる帯域内偏差が大きすぎるのである。
これは、フリップチップ構造により発生する外来電磁波
の影響や不要な浮遊容量のSAW素子に及ぼす影響が大
きいものと考えられる。For this reason, the type using the flip chip method is expected to be able to achieve a low profile.
As shown in FIG. 12 showing the filter characteristics (| S21 |),
At present, satisfactory characteristics have not been obtained within a high-frequency pass band used in communication equipment. That is, as shown in part E in FIG. 12, the distortion of the characteristics of the pass band is large, and the so-called in-band deviation is too large.
It is considered that this has a large influence on the SAW element due to an external electromagnetic wave generated by the flip chip structure and unnecessary stray capacitance.
【0007】そこで、本発明では通過帯域内のフィルタ
特性を向上させるとともに、小型化,低背化,及び軽量
化が可能な弾性表面波装置を提供することを目的とす
る。Accordingly, an object of the present invention is to provide a surface acoustic wave device capable of improving the filter characteristics in a pass band and reducing the size, height, and weight.
【0008】[0008]
【課題を解決するための手段】上記課題を解決するため
に、本発明の弾性表面波装置は、圧電基板上に弾性表面
波を発生させる励振電極を設けた弾性表面波素子を、励
振電極の配設面を下側に絶縁基板上に載置して成り、絶
縁基板内に前記励振電極と接続される接地電極を励振電
極と対向させた状態で設けるとともに、励振電極と接地
電極との距離Dが、D>S/(1.75×104 ×λ)
を満足するようにした。ただし、S:弾性表面波素子の
電極総面積、λ:弾性表面波の波長である。In order to solve the above-mentioned problems, a surface acoustic wave device according to the present invention comprises a surface acoustic wave element having an excitation electrode for generating a surface acoustic wave on a piezoelectric substrate. The mounting surface is placed on the insulating substrate below, and a ground electrode connected to the excitation electrode is provided in the insulating substrate so as to face the excitation electrode, and a distance between the excitation electrode and the ground electrode is set. D is D> S / (1.75 × 10 4 × λ)
Was satisfied. Here, S is the total area of the electrodes of the surface acoustic wave element, and λ is the wavelength of the surface acoustic wave.
【0009】[0009]
【発明の実施の形態】本発明に係る弾性表面波装置の一
実施形態を図面に基づき詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a surface acoustic wave device according to the present invention will be described in detail with reference to the drawings.
【0010】図1に示すように、本発明のSAW素子T
は、タンタル酸リチウム(LiTaO3 )、ニオブ酸リ
チウム(LiNbO3 )、水晶、または四ホウ酸リチウ
ム(Li2 B4 O7 )等から成る圧電基板1上に、弾性
表面波を発生させる励振電極(例えば、櫛歯状をなすI
DT電極)や梯子状をなす反射器、等の電極2を形成し
たものであって、基板として例えば、厚さ300 μm ,4
2°Yカット−X伝搬のLiTaO3 単結晶基板を用
い、IDT電極や反射器には、微細加工技術であるフォ
トリソグラフィ技術を用いて厚み約4300Å程度に形成す
る。また、電極間ピッチは、平均2.13μm で設計する。
さらに、フィルタの設計は、前述したIDT電極及びそ
の伝搬方向の両側に反射器を有するSAW 共振子を梯
子型回路に接続させた、いわゆるラダータイプのSAW
フィルタとなるように構成するが、これに限定されるも
のではない。As shown in FIG. 1, the SAW element T of the present invention
Are excitation electrodes for generating surface acoustic waves on a piezoelectric substrate 1 made of lithium tantalate (LiTaO 3 ), lithium niobate (LiNbO 3 ), quartz, or lithium tetraborate (Li 2 B 4 O 7 ). (For example, a comb-shaped I
DT electrode), a ladder-like reflector, and the like, and an electrode 2 is formed thereon.
A 2 ° Y cut-X propagation LiTaO 3 single crystal substrate is used, and the IDT electrodes and reflectors are formed to a thickness of about 4300 ° using photolithography technology which is a fine processing technology. The pitch between electrodes is designed to be 2.13 μm on average.
Further, the design of the filter is based on a so-called ladder type SAW in which the above-described IDT electrode and a SAW resonator having reflectors on both sides in the propagation direction are connected to a ladder type circuit.
It is configured to be a filter, but is not limited to this.
【0011】上記弾性表面波素子Tは、図2〜図5に示
すように、例えばアルミナなどの絶縁基板から成るパッ
ケージ内に、励振電極等の電極2が形成された圧電基板
1を下面側にして納められ、SAW装置Fとして完成す
る。パッケージは絶縁基板である下基板4及び蓋体3等
からなり、下基板4上に複数の電極パターン8(例え
ば、入力端子用、第1出力端子用、第2出力端子用、接
地用の計4つ)が形成されている。これら電極パターン
の内、接地用電極パターン8aはSAW素子の励振電極
を含む電極2に対向するようにして、図3(a),図
4,図5に示すように、下基板4内に埋め込まれた矩形
状の接地電極5と接続されている。すなわち、SAW素
子Tの伝搬面を接地電極5の電極面に正確に合わせるこ
とにより、外部の電波を遮断するようにしているのであ
る。例えば、0.2mm 程度のセラミックシートを2層張り
合わせて焼成し作製するが、2層のうち下にある層に接
地電極作製のためAg-Pd を印刷した後に焼成を行うなど
して作製する。なお、接地電極5は、上に積まれたシー
トに100 μm 径程度のビアホール(図中9の部分)を開
口することで、接地電極5と上記接地用電極パターンと
が容易に接続できるようにする。As shown in FIGS. 2 to 5, the surface acoustic wave element T has a piezoelectric substrate 1 having an electrode 2 such as an excitation electrode formed in a package made of an insulating substrate such as alumina. And completed as a SAW device F. The package includes a lower substrate 4 which is an insulating substrate, a lid 3 and the like, and a plurality of electrode patterns 8 (for example, for an input terminal, a first output terminal, a second output terminal, and a grounding device) are formed on the lower substrate 4. 4) are formed. Of these electrode patterns, the ground electrode pattern 8a is embedded in the lower substrate 4 as shown in FIGS. 3A, 4 and 5 so as to face the electrode 2 including the excitation electrode of the SAW element. Connected to the grounded rectangular ground electrode 5. In other words, the propagation surface of the SAW element T is accurately aligned with the electrode surface of the ground electrode 5 so as to cut off external radio waves. For example, two ceramic sheets each having a thickness of about 0.2 mm are laminated and fired, and are manufactured by printing Ag-Pd on a lower one of the two layers for manufacturing a ground electrode and then firing. The ground electrode 5 is formed by opening a via hole (portion 9 in the figure) having a diameter of about 100 μm in the sheet stacked thereon so that the ground electrode 5 can be easily connected to the grounding electrode pattern. I do.
【0012】下基板4とSAW素子Tに設けられた励振
電極等の電極2とは、例えばAuから成るバンプ6により
下基板4の各電極パターン8と電気的に接続される。こ
こで、上記電極2と電極パターン8との接続は以下のよ
うにして行うのが望ましい。すなわち、SAW素子と接
地電極5との位置が正確でない場合(例えば、約300μm
程度のずれでも)、浮遊容量が増大し帯域内偏差が増
大することがある。これを極力防止するために、図6に
示すように、下基板4のバンプ接合面に凹部11を設
け、これによる正確な位置決めを実現させることによ
り、寄生容量のバラツキを削減させることができる。例
えば、下基板4の各電極パターン8に接続される引き出
し電極12の径を約150 μm 程度とし、厚み30μm の凹
部になるようにAu電極を積層して形成し、この凹部11
はバンプ6がちょうど入る位置に設計する。接合させる
部位には予め接合材である導電性ペースト10を塗布し
て置き、バンプ6と引き出し電極12を確実に接合させ
るようにする。なお、この接合材は半田,異方性導電膜
等でも構わない。The lower substrate 4 and the electrodes 2 such as excitation electrodes provided on the SAW element T are electrically connected to the respective electrode patterns 8 of the lower substrate 4 by bumps 6 made of, for example, Au. Here, the connection between the electrode 2 and the electrode pattern 8 is desirably performed as follows. That is, when the position between the SAW element and the ground electrode 5 is not accurate (for example, about 300 μm
(Even to some degree), the stray capacitance may increase and the in-band deviation may increase. In order to prevent this as much as possible, as shown in FIG. 6, a concave portion 11 is provided on the bump bonding surface of the lower substrate 4 to realize accurate positioning, thereby reducing the variation of the parasitic capacitance. For example, the diameter of the extraction electrode 12 connected to each electrode pattern 8 of the lower substrate 4 is set to about 150 μm, and the Au electrode is formed so as to form a recess having a thickness of 30 μm.
Is designed at a position where the bump 6 just enters. A conductive paste 10 which is a bonding material is applied in advance to a portion to be bonded, and the bump 6 and the lead electrode 12 are securely bonded. The joining material may be solder, an anisotropic conductive film, or the like.
【0013】また、蓋体3と下基板4とはエポキシ樹
脂、ガラス、半田等の接着材7とで接続される。なお、
接着材7を用いずにシーム溶接することもできる。ま
た、パッケージの材料には低誘電率であるガラスセラミ
ックを用いても良い。また、電極をなすように金属を配
置させ、射出成形した耐熱エポキシ樹脂材を用いても構
わない。The lid 3 and the lower substrate 4 are connected with an adhesive 7 such as epoxy resin, glass, solder, or the like. In addition,
Seam welding can also be performed without using the adhesive 7. Further, a glass ceramic having a low dielectric constant may be used as a material of the package. Alternatively, a heat-resistant epoxy resin material obtained by disposing a metal so as to form an electrode and injection molding may be used.
【0014】励振電極を含む電極2の面と接地電極5と
の間の距離Dは例えば約0.2mmとする。これは、接地
電極5とSAW素子との影響を考慮して決定したD>S
/(1.75×104 ×λ)を満足するためである。こ
こで、Sは電極2の総面積であり、SAW素子の励振電
極やその他の電極パターン全てを含む面積であり、λは
弾性表面波の波長である。例えばλを4.26μm 、S
(=図1におけるL(0.8mm)×図1におけるW
(1.4mm)を1.12mm2 とすると、Dは約0.15
mmより大とすると好ましいことが判る。上記Dの関係式
は、Dを変えて帯域内偏差を測定した場合に、図9に示
すように、0.15mm以上で帯域内偏差が1dBより小
さくなることが判明し、この結果より導いたものであ
る。ただし、低背化を実現させるためにDは0.15〜
0.5mm程度の範囲内が適当である。The distance D between the surface of the electrode 2 including the excitation electrode and the ground electrode 5 is, for example, about 0.2 mm. This is because D> S determined in consideration of the influence of the ground electrode 5 and the SAW element.
/(1.75×10 4 × λ). Here, S is the total area of the electrode 2, the area including the excitation electrode of the SAW element and all other electrode patterns, and λ is the wavelength of the surface acoustic wave. For example, λ is 4.26 μm, S
(= L in FIG. 1 (0.8 mm) × W in FIG. 1
If (1.4 mm) is 1.12 mm 2 , D is about 0.15
It can be seen that it is preferable to set it larger than mm. When the in-band deviation was measured by changing D, as shown in FIG. 9, it was found that the in-band deviation was smaller than 1 dB at 0.15 mm or more, and the relational expression of D was derived from this result. Things. However, D is 0.15 to achieve the low profile.
A range of about 0.5 mm is appropriate.
【0015】上記構成のSAW装置におけるフィルタ特
性(|S21|)を図7に示す。従来のフリップチップの
フィルタ特性図(図12)に比べ、フィルタ特性の帯域
内偏差が小さくなっていることが判る。かくして、本発
明の弾性表面波装置によれば、フィルタ特性を損なうこ
となく、小型低背化を実現することができた。FIG. 7 shows the filter characteristics (| S21 |) in the SAW device having the above configuration. It can be seen that the in-band deviation of the filter characteristics is smaller than the filter characteristics diagram (FIG. 12) of the conventional flip chip. Thus, according to the surface acoustic wave device of the present invention, a reduction in size and height can be realized without impairing the filter characteristics.
【0016】以下に、上記絶縁基板中に接地電極を埋め
込み、この接地電極と励振電極等のSAW素子の電極と
の間を適当にする効果について考察する。Hereinafter, the effect of embedding a ground electrode in the insulating substrate and making an appropriate space between the ground electrode and an electrode of a SAW element such as an excitation electrode will be considered.
【0017】SAW装置が実際の移動体通信機器に搭載
された時、この装置は機器の回路基板に半田付けされて
用いられるが、この回路基板には通信機使用時装置半田
付け箇所近傍で高周波電流が流れ、この接地電極が無け
ればSAW装置は回路基板に流れる高周波電流によって
信号を受け取る可能性がある。このノイズは実際にフィ
ルタ機能を損ない減衰量が小さくなる。そこで、この搭
載基板による電磁波を遮蔽するため接地電極をSAW素
子と搭載基板の間に入れて設計する必要があっる。When a SAW device is mounted on an actual mobile communication device, the device is used after being soldered to a circuit board of the device. If a current flows and the ground electrode is not provided, the SAW device may receive a signal due to a high-frequency current flowing through the circuit board. This noise actually impairs the filter function and reduces the amount of attenuation. Therefore, it is necessary to insert a ground electrode between the SAW element and the mounting substrate in order to shield the electromagnetic waves from the mounting substrate.
【0018】従来のフリップチップに用いられるセラミ
ック下基板に実装し、SAW素子を構成しているSAW
共振子の電気特性(インピーダンス(|Z|)の周波数
依存性)について解析したところ、図8に示す点線のイ
ンピーダンス特性となっていることが判明した。これは
SAW素子の電極と接地電極による浮遊容量により、共
振子特性の反共振周波数が実線(設計上)の特性から破
線の特性へ移動してしまうので、設計した反共振周波数
と一致しないことが判明した。A SAW mounted on a ceramic lower substrate used for a conventional flip chip to constitute a SAW element
When the electrical characteristics of the resonator (frequency dependence of impedance (| Z |)) were analyzed, it was found that the impedance characteristics indicated by the dotted line in FIG. 8 were obtained. This is because the anti-resonance frequency of the resonator characteristic shifts from the solid line (designed) characteristic to the broken line characteristic due to the stray capacitance caused by the electrode of the SAW element and the ground electrode. found.
【0019】そこで、上述したように、接地電極とSA
W素子の電極とを適当な距離だけ離すとともに、絶縁基
板内に接地電極を設けることにより、周波数が高いため
に生じるSAW素子とパッケージとの複雑な電気回路が
形成され、不要な成分である浮遊容量を十分に緩和させ
る回路となったものと考えられる。Therefore, as described above, the ground electrode and the SA
By separating the electrode of the W element from the electrode by an appropriate distance and providing a ground electrode in the insulating substrate, a complicated electric circuit between the SAW element and the package generated due to high frequency is formed, and floating components, which are unnecessary components, are generated. It is considered that the circuit was able to sufficiently reduce the capacitance.
【0020】なお、本発明は上述した実施の形態に限定
されるものではなく、例えば接地電極を図3(b)に示
すように櫛状にしてもよく、これにより通過帯域内偏差
は接地電極が図3(a)の矩形状よりも改善される。こ
れは、SAW素子と接地電極との浮遊容量をさらに削減
させる形状を採用したことにより、特性が改善されたと
考えられる。例えば、接地電極のパターン形状を1mm以
上のピッチを有する櫛状電極(電極指を2本以上)にす
ることにより、電磁波を有効に遮断することができ、特
性を向上させることができる。The present invention is not limited to the above-described embodiment. For example, the ground electrode may be comb-shaped as shown in FIG. Is improved over the rectangular shape of FIG. It is considered that the characteristics were improved by adopting a shape for further reducing the stray capacitance between the SAW element and the ground electrode. For example, by setting the pattern shape of the ground electrode to a comb-like electrode (two or more electrode fingers) having a pitch of 1 mm or more, it is possible to effectively block electromagnetic waves and improve characteristics.
【0021】[0021]
【発明の効果】本発明の弾性表面波装置によれば、外部
の電磁波の影響を防止するための接地電極を励振電極と
対向させた状態で絶縁基板内に設け、さらに、励振電極
と接地電極との距離を最適化したので、通信機器で使用
される高周波においても、絶縁基板側に設けた接地電極
等による不要な浮遊容量の悪影響等を極力防止し、帯域
内偏差を極力小さくすることで所望の特性を有する弾性
表面波装置を提供することができる。According to the surface acoustic wave device of the present invention, the ground electrode for preventing the influence of external electromagnetic waves is provided in the insulating substrate in a state facing the excitation electrode. The distance between the antenna and the antenna has been optimized, so that even at high frequencies used in communication equipment, the adverse effects of unnecessary stray capacitance due to the ground electrode etc. provided on the insulating substrate side are minimized, and the in-band deviation is minimized. A surface acoustic wave device having desired characteristics can be provided.
【0022】また、接地電極が絶縁基板内に配設されて
いるので、弾性表面波装置の小型化、低背化、及び軽量
化が容易な優れた弾性表面波装置を提供することが可能
となる。Further, since the ground electrode is provided in the insulating substrate, it is possible to provide an excellent surface acoustic wave device that can easily be reduced in size, height, and weight. Become.
【図1】本発明に係る弾性表面波素子の一実施形態を説
明する斜視図である。FIG. 1 is a perspective view illustrating an embodiment of a surface acoustic wave device according to the present invention.
【図2】本発明に係る弾性表面波装置の一実施形態を説
明する分解斜視図である。FIG. 2 is an exploded perspective view illustrating an embodiment of a surface acoustic wave device according to the present invention.
【図3】(a),(b)はそれぞれ接地電極の平面形状
を説明する平面図である。FIGS. 3A and 3B are plan views illustrating the planar shape of a ground electrode.
【図4】図2におけるA−A’線概略断面図である。FIG. 4 is a schematic sectional view taken along line A-A ′ in FIG. 2;
【図5】図2におけるB−B’線概略断面図である。FIG. 5 is a schematic sectional view taken along line B-B ′ in FIG. 2;
【図6】本発明に係る弾性表面波素子と下基板とを接続
する一例を説明する部分断面図である。FIG. 6 is a partial cross-sectional view illustrating an example of connecting a surface acoustic wave element according to the present invention to a lower substrate.
【図7】本発明に係る弾性表面波装置の周波数特性を説
明する図である。FIG. 7 is a diagram illustrating frequency characteristics of the surface acoustic wave device according to the present invention.
【図8】共振子のインピーダンス特性を説明する図であ
る。FIG. 8 is a diagram illustrating impedance characteristics of a resonator.
【図9】励振電極−接地電極間距離と帯域内偏差量との
関係を説明するグラフである。FIG. 9 is a graph illustrating a relationship between a distance between an excitation electrode and a ground electrode and an in-band deviation amount.
【図10】従来の弾性表面波装置の一例を説明する概略
断面図である。FIG. 10 is a schematic sectional view illustrating an example of a conventional surface acoustic wave device.
【図11】従来の弾性表面波装置の一例を説明する概略
断面図である。FIG. 11 is a schematic sectional view illustrating an example of a conventional surface acoustic wave device.
【図12】従来の弾性表面波装置の周波数特性を説明す
る図である。FIG. 12 is a diagram illustrating frequency characteristics of a conventional surface acoustic wave device.
1:圧電基板 2:電極(励振電極等を含む) 3:蓋体 4:下基板(絶縁基板) 5:接地電極 6:バンプ 7:接着材 8:電極パターン T:弾性表面波素子 F:弾性表面波装置 1: piezoelectric substrate 2: electrode (including excitation electrode etc.) 3: lid 4: lower substrate (insulating substrate) 5: ground electrode 6: bump 7: adhesive 8: electrode pattern T: surface acoustic wave element F: elastic Surface wave device
Claims (1)
る励振電極を配設した弾性表面波素子を、絶縁基板上に
載置して成る弾性表面波装置であって、前記絶縁基板内
に前記励振電極と接続される接地電極を励振電極と対向
させた状態で設けるとともに、前記励振電極と前記接地
電極との距離Dを下記式を満足するように設定したこと
を特徴とする弾性表面波装置。 D>S/(1.75×104 ×λ) (ただし、S:弾性表面波素子の電極総面積、λ:弾性
表面波の波長)1. A surface acoustic wave device comprising: a surface acoustic wave element having an excitation electrode for generating a surface acoustic wave on a lower surface of a piezoelectric substrate; and a surface acoustic wave device mounted on an insulating substrate. A ground electrode connected to the excitation electrode is provided so as to face the excitation electrode, and a distance D between the excitation electrode and the ground electrode is set so as to satisfy the following expression. apparatus. D> S / (1.75 × 10 4 × λ) (where, S: total electrode area of the surface acoustic wave element, λ: wavelength of the surface acoustic wave)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4803798A JPH11251865A (en) | 1998-02-27 | 1998-02-27 | Surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4803798A JPH11251865A (en) | 1998-02-27 | 1998-02-27 | Surface acoustic wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11251865A true JPH11251865A (en) | 1999-09-17 |
Family
ID=12792126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4803798A Pending JPH11251865A (en) | 1998-02-27 | 1998-02-27 | Surface acoustic wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH11251865A (en) |
-
1998
- 1998-02-27 JP JP4803798A patent/JPH11251865A/en active Pending
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