JPH11238597A

JPH11238597A - Plasma processing method and apparatus

Info

Publication number: JPH11238597A
Application number: JP10039958A
Authority: JP
Inventors: Tomohiro Okumura; 智洋奥村; Tadashi Kimura; 忠司木村; Akio Mihashi; 章男三橋; Akizo Watanabe; 彰三渡辺
Original assignee: Matsushita Electric Industrial Co Ltd
Current assignee: Panasonic Holdings Corp
Priority date: 1998-02-23
Filing date: 1998-02-23
Publication date: 1999-08-31

Abstract

(57)【要約】【課題】均一なプラズマを発生させることができ、か
つ、処理速度の基板面内均一性の悪化や、固体材料のス
パッタリングによる基板への不純物混入の原因となるよ
うなホローカソード放電の発生を抑制できるプラズマ処
理方法及び装置を提供する。【解決手段】真空容器１内に、ガス供給装置２から所
定のガスを導入しつつ、排気装置としてのポンプ３によ
り排気を行い、真空容器１内を所定の圧力に保ちなが
ら、アンテナ用高周波電源４により１００MHzの高周波
電力を平板状アンテナ５に供給することにより、誘電体
窓６を介して電磁波を真空容器１内に放射すると、真空
容器１内に均一なプラズマが発生し、電極７上に載置さ
れた基板８に対してエッチング、堆積、表面改質等のプ
ラズマ処理を行うことができる。 (57) [Summary] [Problem] A hollow that can generate a uniform plasma, and causes a deterioration in uniformity of a processing speed in a substrate surface and causes impurities to be mixed into a substrate by sputtering of a solid material. Provided is a plasma processing method and apparatus capable of suppressing generation of cathode discharge. SOLUTION: A high frequency power supply for an antenna is performed while a predetermined gas is introduced from a gas supply device 2 into a vacuum vessel 1 and exhausted by a pump 3 as an exhaust device, and the inside of the vacuum vessel 1 is maintained at a predetermined pressure. When an electromagnetic wave is radiated into the vacuum vessel 1 through the dielectric window 6 by supplying a high-frequency power of 100 MHz to the flat antenna 5 by 4, uniform plasma is generated in the vacuum vessel 1, Plasma processing such as etching, deposition, and surface modification can be performed on the placed substrate 8.

Description

DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】この発明は、半導体等の電子
デバイスやマイクロマシンの製造に利用されるドライエ
ッチング、スパッタリング、プラズマＣＶＤ等のプラズ
マ処理方法及び装置に関し、特に電磁波を用いて励起す
るプラズマを利用するプラズマ処理方法及び装置に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus for dry etching, sputtering, plasma CVD and the like used in the manufacture of electronic devices and micromachines such as semiconductors, and more particularly to the use of plasma excited by electromagnetic waves. The present invention relates to a plasma processing method and apparatus.

【０００２】[0002]

【従来の技術】半導体等の電子デバイスの微細化に対応
するために、高密度プラズマの利用が重要であることに
ついて、特開平８−８３６９６号公報に述べられている
が、最近は、電子密度が高くかつ電子温度の低い、低電
子温度プラズマが注目されている。2. Description of the Related Art Japanese Patent Application Laid-Open No. 8-83696 describes the importance of using high-density plasma in order to cope with miniaturization of electronic devices such as semiconductors. Low electron temperature plasma, which has high electron temperature and low electron temperature, has attracted attention.

【０００３】Ｃｌ₂やＳＦ₆等のように負性の強いガス、
言い換えれば、負イオンが生じやすいガスをプラズマ化
したとき、電子温度が３ｅＶ程度以下になると、電子温
度が高いときに比べてより多量の負イオンが生成され
る。この現象を利用すると、正イオンの入射過多によっ
て微細パターンの底部に正電荷が蓄積されることによっ
て起きる、ノッチと呼ばれるエッチング形状異常を防止
することができ、極めて微細なパターンのエッチングを
高精度に行うことができる。[0003] Strongly negative gases such as Cl ₂ and SF ₆
In other words, when a gas that easily generates negative ions is turned into plasma, when the electron temperature is about 3 eV or less, a larger amount of negative ions is generated than when the electron temperature is high. Utilizing this phenomenon, it is possible to prevent an abnormal etching shape called a notch, which is caused by the accumulation of positive charges at the bottom of the fine pattern due to excessive incidence of positive ions. It can be carried out.

【０００４】また、シリコン酸化膜等の絶縁膜のエッチ
ングを行う際に一般的に用いられるＣｘＦｙやＣｘＨｙ
Ｆｚ（ｘ、ｙ、ｚは自然数）等の炭素およびフッ素を含
むガスをプラズマ化したとき、電子温度が３ｅＶ程度以
下になると、電子温度が高いときに比べてガスの分解が
抑制され、とくにＦ原子やＦラジカル等の生成が抑えら
れる。Ｆ原子やＦラジカル等はシリコンをエッチングす
る速度が早いため、電子温度が低い方が対シリコンエッ
チング選択比の大きい絶縁膜エッチングが可能になる。Further, CxFy and CxHy generally used when etching an insulating film such as a silicon oxide film are used.
When a gas containing carbon and fluorine such as Fz (x, y, and z are natural numbers) is plasmatized, when the electron temperature is about 3 eV or less, the decomposition of the gas is suppressed as compared with the case where the electron temperature is high. Generation of atoms, F radicals, and the like is suppressed. Since F atoms, F radicals, and the like have a high silicon etching rate, the lower the electron temperature, the higher the etching selectivity with respect to silicon.

【０００５】また、電子温度が３ｅＶ以下になると、イ
オン温度も低下するので、プラズマＣＶＤにおける基板
へのイオンダメージを低減することができる。[0005] When the electron temperature becomes 3 eV or less, the ion temperature also drops, so that ion damage to the substrate in plasma CVD can be reduced.

【０００６】電子温度の低いプラズマを生成できる技術
として現在注目されているのは、電磁波を用いるプラズ
マ源である。これは、真空容器内に電磁波を放射するこ
とによってプラズマを発生させるもので、電磁波を放射
するためのアンテナや誘電体窓の形態としてさまざまな
ものが用いられている。A technique that can generate plasma having a low electron temperature has been attracting attention at present from a plasma source using electromagnetic waves. This generates plasma by radiating electromagnetic waves into a vacuum vessel, and various forms of antennas and dielectric windows for radiating electromagnetic waves are used.

【０００７】図２２は我々が提案しているスパイラルア
ンテナ方式プラズマ源を搭載したエッチング装置の斜視
図である。図２２において、真空容器１内にガス供給装
置２から所定のガスを導入しつつ排気装置としてのポン
プ３により排気を行い、真空容器１内を所定の圧力に保
ちながら、アンテナ用高周波電源４により５０乃至３０
０ＭＨｚの高周波電力を誘電体窓６上のスパイラルアン
テナ２１に供給すると、真空容器１内にプラズマが発生
し、電極７上に載置された基板８に対してエッチング、
堆積、表面改質等のプラズマ処理を行うことができる。
このとき、図２２に示すように、電極７にも電極用高周
波電源９により高周波電力を供給することで、基板８に
到達するイオンエネルギーを制御することができる。FIG. 22 is a perspective view of an etching apparatus equipped with a spiral antenna type plasma source proposed by us. In FIG. 22, while pumping a predetermined gas from a gas supply device 2 into a vacuum vessel 1 and evacuating by a pump 3 as an exhaust device, while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, a high frequency power supply for antenna 4 is used. 50 to 30
When high frequency power of 0 MHz is supplied to the spiral antenna 21 on the dielectric window 6, plasma is generated in the vacuum vessel 1, and etching is performed on the substrate 8 mounted on the electrode 7.
Plasma treatment such as deposition and surface modification can be performed.
At this time, as shown in FIG. 22, by supplying high-frequency power to the electrode 7 from the electrode high-frequency power supply 9, the ion energy reaching the substrate 8 can be controlled.

【０００８】図２３はスポークアンテナ方式プラズマ源
を搭載したエッチング装置の斜視図である。図２３にお
いて、真空容器１内にガス供給装置２から所定のガスを
導入しつつ排気装置としてのポンプ３により排気を行
い、真空容器１内を所定の圧力に保ちながら、アンテナ
用高周波電源４により５００ＭＨｚの高周波電力を誘電
板窓６上の放射状導電体からなるスポークアンテナ２２
に供給すると、真空容器１内にプラズマが発生し、電極
７上に載置された基板８に対してエッチング、堆積、表
面改質等のプラズマ処理を行うことができる。このと
き、図２３に示すように、電極７にも電極用高周波電源
９により高周波電力を供給することで、基板８に到達す
るイオンエネルギーを制御することができる。なお、こ
の方式については、S.Samukawa et al., "New Ultra-Hi
gh-Frequency Plasma Source for Large-Scale Etching
Processes", Jpn.J.Appl.Phys., Vol.34, Pt.1, No.12
B(1995)に詳しく述べられている。FIG. 23 is a perspective view of an etching apparatus equipped with a spoke antenna type plasma source. In FIG. 23, while introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is evacuated by the pump 3 as an exhaust device, and while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, the high frequency power supply for antenna 4 is used. Spoke antenna 22 made of radial conductor on dielectric plate window 6 with high frequency power of 500 MHz
When plasma is supplied to the substrate 7, plasma is generated in the vacuum chamber 1, and the substrate 8 placed on the electrode 7 can be subjected to plasma processing such as etching, deposition, and surface modification. At this time, as shown in FIG. 23, by supplying high-frequency power to the electrode 7 from the electrode high-frequency power supply 9, the ion energy reaching the substrate 8 can be controlled. This method is described in S. Samukawa et al., "New Ultra-Hi
gh-Frequency Plasma Source for Large-Scale Etching
Processes ", Jpn.J.Appl.Phys., Vol.34, Pt.1, No.12
B (1995).

【０００９】このように、真空容器内に電磁波を放射す
ることによってプラズマを発生させる方式としてさまざ
まな形態があるが、電磁波のエネルギー吸収のメカニズ
ムは同様の機構で行われているものと考えられている。
図２４に示すように、真空容器１の内壁面は酸化アルミ
ニウム（アルマイト）等の絶縁体で構成されているの
で、その電位はプラズマ空間電位よりも低くなり、表面
近傍は電子密度が非常に小さいイオンシースとなってい
る。真空容器の内壁面がステンレス等の導電体で構成さ
れている場合も、高周波ノイズを放射しないように接地
電位に保持されるから、その電位はプラズマ空間電位よ
りも低くなり、同様に表面近傍は電子密度が非常に小さ
いイオンシースとなる。直流磁界が存在しない場合は、
電子プラズマ周波数f_p（〜数GHz）よりも周波数の低い
電磁波はプラズマ中に浸入できないが、電子プラズマ周
波数f_pは、プラズマ密度N_eの1/2乗に比例するから、イ
オンシースでは電子プラズマ周波数は極端に小さくな
り、電磁波が浸入できる。また、プラズマ中にも、プラ
ズマ表皮深さ（〜c/2πfp〜数cm）までは電磁波が浸入
することができるから、結局、真空容器内で電磁波が伝
搬できる通路はイオンシース+表皮部分となる。この電
磁波が伝搬できる通路を、図２５に示すスパイラルアン
テナ方式プラズマ源を搭載したエッチング装置の断面図
の斜線部に示す。図２５からわかるように、電磁波が伝
搬できる通路は、真空容器１の内壁面に沿った部分、す
なわち、内壁表面部である。このことは、スポークアン
テナ方式プラズマ源を搭載したエッチング装置において
も、同様である。As described above, there are various modes for generating plasma by radiating an electromagnetic wave into a vacuum vessel, and it is considered that the mechanism of absorbing the energy of the electromagnetic wave is performed by a similar mechanism. I have.
As shown in FIG. 24, since the inner wall surface of the vacuum vessel 1 is made of an insulator such as aluminum oxide (alumite), the potential is lower than the plasma space potential, and the electron density near the surface is very small. It is an ion sheath. Even when the inner wall surface of the vacuum vessel is made of a conductor such as stainless steel, it is kept at the ground potential so as not to radiate high-frequency noise. An ion sheath having a very low electron density is obtained. If there is no DC magnetic field,
Although electron plasma frequency f _p (~ number GHz) lower electromagnetic frequency than can not penetrate into the plasma, the electron plasma frequency f _p is proportional to the square root of the plasma density N _e, the electron plasma in the ion sheath The frequency becomes extremely low and electromagnetic waves can penetrate. Also, since electromagnetic waves can penetrate into the plasma up to the plasma skin depth (up to c / 2πfp to several cm), the path through which the electromagnetic waves can propagate in the vacuum vessel is the ion sheath and the skin portion. . The path through which the electromagnetic wave can propagate is indicated by hatching in the cross-sectional view of the etching apparatus equipped with the spiral antenna type plasma source shown in FIG. As can be seen from FIG. 25, the passage through which the electromagnetic wave can propagate is a portion along the inner wall surface of the vacuum vessel 1, that is, the inner wall surface portion. The same applies to an etching apparatus equipped with a spoke antenna type plasma source.

【００１０】[0010]

【発明が解決しようとする課題】しかしながら、図２２
及び図２３に示した従来の方式では、プラズマが均一に
形成できないという問題点があった。プラズマ生成条件
（ガス種、ガス圧力、高周波電力の大きさなど）が変化
すると、プラズマのより高密度の部分が形成される場所
が変化したり、プラズマがちらつく場合がある。また、
真空容器を構成する固体材料に穴状の形状が存在する場
合、穴内部でホローカソード放電が発生し、処理速度の
基板面内均一性の悪化や、固体材料のスパッタリングに
よる基板への不純物混入の原因となるという問題点があ
った。However, FIG.
Also, the conventional method shown in FIG. 23 has a problem that plasma cannot be formed uniformly. When the plasma generation conditions (gas type, gas pressure, magnitude of high frequency power, etc.) change, the place where a higher density portion of the plasma is formed may change, or the plasma may flicker. Also,
If the solid material that forms the vacuum vessel has a hole-like shape, hollow cathode discharge occurs inside the hole, deteriorating the uniformity of the processing speed within the substrate surface, and the contamination of the substrate by impurities due to sputtering of the solid material. There was a problem that caused it.

【００１１】以下、このような現象が起きる原因につい
て考察してみる。スパイラルアンテナ２１やスポークア
ンテナ２２から放射される電磁波の電界は、アンテナの
構成から容易に推察されるように、基板８に対して概ね
平行である。電磁波の電界は一般に電磁波の進行方向に
対して垂直であるから、アンテナから放射された電磁波
が実際に伝搬できる通路は、図２６に示す斜線部、すな
わち、真空容器１の側壁部分である。ところが、図２２
〜２６には示していないが、一般に真空容器１の側壁に
は、基板８の出し入れを行うためのゲートや、プラズマ
発光をモニタリングするための窓等の穴部分が設けられ
ており、周方向に非対称な形状を有するから、真空容器
１の側壁部分には電磁波が伝搬しやすい経路とそうでな
い経路が存在する。このため、均一なプラズマが形成で
きないものと考えられる。また、電磁波が真空容器１の
下部まで広がってしまうので、先に述べたゲートやプラ
ズマ発光をモニタリングするための窓等の穴内部にも電
磁波が到達し、ホローカソード放電を引き起こしてしま
う。Hereinafter, the cause of such a phenomenon will be considered. The electric field of the electromagnetic wave radiated from the spiral antenna 21 and the spoke antenna 22 is substantially parallel to the substrate 8 as easily inferred from the configuration of the antenna. Since the electric field of the electromagnetic wave is generally perpendicular to the traveling direction of the electromagnetic wave, the path through which the electromagnetic wave radiated from the antenna can actually propagate is the hatched portion shown in FIG. However, FIG.
Although not shown in FIGS. 26 to 26, generally, a side wall of the vacuum container 1 is provided with a hole portion such as a gate for taking the substrate 8 in and out, a window for monitoring plasma emission, and the like. Due to the asymmetric shape, there are a path through which the electromagnetic wave easily propagates and a path through which the electromagnetic wave does not easily propagate on the side wall of the vacuum vessel 1. Therefore, it is considered that uniform plasma cannot be formed. Further, since the electromagnetic wave spreads to the lower portion of the vacuum vessel 1, the electromagnetic wave also reaches the inside of the above-described hole such as the gate and the window for monitoring plasma emission, and causes a hollow cathode discharge.

【００１２】本発明は、上記従来の問題点に鑑み、均一
なプラズマを発生させることができ、かつ、処理速度の
基板面内均一性の悪化や、固体材料のスパッタリングに
よる基板への不純物混入の原因となるようなホローカソ
ード放電の発生を抑制できるプラズマ処理方法及び装置
を提供することを目的としている。The present invention has been made in view of the above-mentioned conventional problems, and is capable of generating uniform plasma, deteriorating in-plane uniformity of processing speed, and preventing impurities from being mixed into a substrate by sputtering of a solid material. It is an object of the present invention to provide a plasma processing method and apparatus capable of suppressing the occurrence of a hollow cathode discharge that causes the plasma processing.

【００１３】[0013]

【課題を解決するための手段】本願の第１発明のプラズ
マ処理方法は、真空容器内にガスを供給しつつ真空容器
内を排気し、真空容器内を所定の圧力に制御しながら、
真空容器内の電極に載置された基板に概ね平行な平板状
アンテナに周波数５０ＭＨｚ乃至３ＧＨｚの高周波電力
を供給することにより、真空容器の内壁面のうち基板に
対向する面に設けられた誘電体窓を介して真空容器内に
電磁波を放射することによって、真空容器内にプラズマ
を発生させ、基板を処理することを特徴とする。According to a first aspect of the present invention, there is provided a plasma processing method, wherein the inside of a vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
By supplying high-frequency power having a frequency of 50 MHz to 3 GHz to a flat antenna substantially parallel to a substrate placed on an electrode in a vacuum container, a dielectric material is provided on a surface of the inner wall surface of the vacuum container facing the substrate. By irradiating electromagnetic waves into the vacuum container through the window, plasma is generated in the vacuum container and the substrate is processed.

【００１４】本願の第１発明のプラズマ処理方法におい
て、好適には、平板状アンテナの外径寸法が、誘電体窓
の外径寸法よりも大きいことが望ましい。In the plasma processing method according to the first aspect of the present invention, it is preferable that the outer diameter of the flat antenna is larger than the outer diameter of the dielectric window.

【００１５】本願の第２発明のプラズマ処理方法は、真
空容器内にガスを供給しつつ真空容器内を排気し、真空
容器内を所定の圧力に制御しながら、真空容器内の電極
に載置された基板に概ね平行な環状アンテナに周波数５
０ＭＨｚ乃至３ＧＨｚの高周波電力を供給することによ
り、真空容器の内壁面のうち基板に対向する面に設けら
れた誘電体窓を介して真空容器内に電磁波を放射するこ
とによって、真空容器内にプラズマを発生させ、基板を
処理することを特徴とする。In the plasma processing method according to the second aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying a gas into the vacuum vessel, and the vacuum vessel is placed on an electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. Frequency 5 to an annular antenna approximately parallel to the
By supplying high-frequency power of 0 MHz to 3 GHz, an electromagnetic wave is radiated into the vacuum container through a dielectric window provided on a surface of the inner surface of the vacuum container facing the substrate, so that plasma is generated in the vacuum container. And processing the substrate.

【００１６】本願の第３発明のプラズマ処理方法は、真
空容器内にガスを供給しつつ真空容器内を排気し、真空
容器内を所定の圧力に制御しながら、真空容器内の電極
に載置された基板に概ね平行な平板状または環状アンテ
ナに周波数５０ＭＨｚ乃至３ＧＨｚの高周波電力を供給
することにより、真空容器の内壁面のうち基板に概ね平
行な環状部に設けられた誘電体窓を介して真空容器内に
電磁波を放射することによって、真空容器内にプラズマ
を発生させ、基板を処理することを特徴とする。In the plasma processing method according to the third invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas to the inside of the vacuum vessel, and placed on the electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. By supplying high-frequency power having a frequency of 50 MHz to 3 GHz to a plate-like or annular antenna substantially parallel to the substrate thus formed, through a dielectric window provided in an annular portion of the inner wall surface of the vacuum vessel substantially parallel to the substrate. By radiating electromagnetic waves into the vacuum vessel, plasma is generated in the vacuum vessel and the substrate is processed.

【００１７】本願の第４発明のプラズマ処理方法は、真
空容器内にガスを供給しつつ真空容器内を排気し、真空
容器内を所定の圧力に制御しながら、真空容器内の電極
に載置された基板に概ね平行な平板状または環状アンテ
ナに周波数５０ＭＨｚ乃至３ＧＨｚの高周波電力を供給
することにより、真空容器の側面に設けられた誘電体窓
を介して真空容器内に電磁波を放射することによって、
真空容器内にプラズマを発生させ、基板を処理すること
を特徴とする。In the plasma processing method according to the fourth aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the vacuum vessel is placed on the electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. By supplying high-frequency power of a frequency of 50 MHz to 3 GHz to a plate-like or annular antenna which is substantially parallel to the substrate, and radiating electromagnetic waves into the vacuum container through a dielectric window provided on the side surface of the vacuum container. ,
It is characterized in that plasma is generated in a vacuum vessel to process a substrate.

【００１８】本願の第４発明のプラズマ処理方法におい
て、誘電体窓が、基板に対向して設けられた真空容器の
凸部の側面に設けられていてもよい。[0018] In the plasma processing method according to the fourth aspect of the present invention, the dielectric window may be provided on a side surface of the convex portion of the vacuum vessel provided to face the substrate.

【００１９】本願の第５発明のプラズマ処理方法は、真
空容器内にガスを供給しつつ真空容器内を排気し、真空
容器内を所定の圧力に制御しながら、真空容器内の電極
に載置された基板に概ね平行な平板状または環状アンテ
ナに周波数５０ＭＨｚ乃至３ＧＨｚの高周波電力を供給
することにより、誘電体窓を介して真空容器内に電磁波
を放射することによって、真空容器内にプラズマを発生
させ、基板を処理するプラズマ処理方法であって、誘電
体窓が、基板に対向して設けられた真空容器の凹部の側
面に設けられていることを特徴とする。In the plasma processing method according to the fifth invention of the present application, the inside of the vacuum vessel is evacuated while supplying a gas into the vacuum vessel, and the vacuum vessel is placed on an electrode in the vacuum vessel while controlling the inside of the vacuum vessel to a predetermined pressure. A high-frequency power of 50 MHz to 3 GHz is supplied to a flat or annular antenna which is substantially parallel to the substrate, and an electromagnetic wave is radiated into the vacuum vessel through the dielectric window to generate plasma in the vacuum vessel. A plasma processing method for processing a substrate, wherein the dielectric window is provided on a side surface of a concave portion of a vacuum container provided to face the substrate.

【００２０】本願の第１、第２、第３、第４または第５
発明のプラズマ処理方法は、真空容器内に直流磁界が存
在しない場合にとくに有効なプラズマ処理方法である。The first, second, third, fourth or fifth of the present application
The plasma processing method of the present invention is a particularly effective plasma processing method when no DC magnetic field exists in the vacuum chamber.

【００２１】また、好適には、電磁波の周波数は５０Ｍ
Ｈｚ乃至３００ＭＨｚであることが望ましい。Preferably, the frequency of the electromagnetic wave is 50M
Hz to 300 MHz.

【００２２】本願の第６発明のプラズマ処理装置は、真
空容器と、真空容器内にガスを供給するためのガス供給
装置と、真空容器内を排気するための排気装置と、真空
容器の内壁面のうち基板に対向する面に設けられた誘電
体窓と、誘電体窓を介して真空容器内に電磁波を放射す
るためのアンテナと、アンテナに周波数５０ＭＨｚ乃至
３ＧＨｚの高周波電力を供給することのできる高周波電
源と、真空容器内に基板を載置するための電極とを備え
たプラズマ処理装置であって、アンテナが基板に平行な
面に対して概ね平行な平板状アンテナであることを特徴
とする。According to a sixth aspect of the present invention, there is provided a plasma processing apparatus comprising: a vacuum container; a gas supply device for supplying gas into the vacuum container; an exhaust device for exhausting the inside of the vacuum container; A dielectric window provided on a surface facing the substrate, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, and high-frequency power having a frequency of 50 MHz to 3 GHz can be supplied to the antenna. A plasma processing apparatus including a high-frequency power source and an electrode for mounting a substrate in a vacuum vessel, wherein the antenna is a flat antenna that is substantially parallel to a plane parallel to the substrate. .

【００２３】本願の第６発明のプラズマ処理装置におい
て、好適には、平板状アンテナの外径寸法が、誘電体窓
の外径寸法よりも大きいことが望ましい。In the plasma processing apparatus according to the sixth aspect of the present invention, it is preferable that the outer diameter of the flat antenna is larger than the outer diameter of the dielectric window.

【００２４】本願の第７発明のプラズマ処理装置は、真
空容器と、真空容器内にガスを供給するためのガス供給
装置と、真空容器内を排気するための排気装置と、真空
容器の内壁面のうち基板に対向する面に設けられた誘電
体窓と、誘電体窓を介して真空容器内に電磁波を放射す
るためのアンテナと、アンテナに周波数５０ＭＨｚ乃至
３ＧＨｚの高周波電力を供給することのできる高周波電
源と、真空容器内に基板を載置するための電極とを備え
たプラズマ処理装置であって、アンテナが基板に平行な
面に対して概ね平行な環状アンテナであることを特徴と
する。The plasma processing apparatus according to the seventh aspect of the present invention includes a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and an inner wall surface of the vacuum container. A dielectric window provided on a surface facing the substrate, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, and high-frequency power having a frequency of 50 MHz to 3 GHz can be supplied to the antenna. A plasma processing apparatus including a high-frequency power supply and an electrode for placing a substrate in a vacuum vessel, wherein the antenna is an annular antenna substantially parallel to a plane parallel to the substrate.

【００２５】本願の第８発明のプラズマ処理装置は、真
空容器と、真空容器内にガスを供給するためのガス供給
装置と、真空容器内を排気するための排気装置と、真空
容器の内壁面のうち基板に概ね平行な環状部に設けられ
た誘電体窓と、誘電体窓を介して真空容器内に電磁波を
放射するためのアンテナと、アンテナに周波数５０ＭＨ
ｚ乃至３ＧＨｚの高周波電力を供給することのできる高
周波電源と、真空容器内に基板を載置するための電極と
を備えたプラズマ処理装置であって、アンテナが基板に
平行な面に対して概ね平行な平板状または環状アンテナ
であることを特徴とする。The plasma processing apparatus according to the eighth aspect of the present invention includes a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and an inner wall surface of the vacuum container. A dielectric window provided in an annular portion substantially parallel to the substrate, an antenna for radiating electromagnetic waves into the vacuum chamber through the dielectric window, and a frequency of 50 MHz
A plasma processing apparatus comprising: a high-frequency power supply capable of supplying high-frequency power of z to 3 GHz; and an electrode for mounting a substrate in a vacuum vessel, wherein an antenna is substantially disposed on a plane parallel to the substrate. It is a parallel plate-like or annular antenna.

【００２６】本願の第９発明のプラズマ処理装置は、真
空容器と、真空容器内にガスを供給するためのガス供給
装置と、真空容器内を排気するための排気装置と、真空
容器の側面に設けられた誘電体窓と、誘電体窓を介して
真空容器内に電磁波を放射するためのアンテナと、アン
テナに周波数５０ＭＨｚ乃至３ＧＨｚの高周波電力を供
給することのできる高周波電源と、真空容器内に基板を
載置するための電極とを備えたプラズマ処理装置であっ
て、アンテナが基板に平行な面に対して概ね平行な平板
状または環状アンテナであることを特徴とする。The plasma processing apparatus according to the ninth aspect of the present invention includes a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A provided dielectric window, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, A plasma processing apparatus provided with an electrode for mounting a substrate, wherein the antenna is a flat or annular antenna that is substantially parallel to a plane parallel to the substrate.

【００２７】本願の第９発明のプラズマ処理装置におい
て、誘電体窓が、基板に対向して設けられた真空容器の
凸部の側面に設けられていてもよい。In the plasma processing apparatus according to the ninth aspect of the present invention, the dielectric window may be provided on a side surface of the convex portion of the vacuum vessel provided to face the substrate.

【００２８】本願の第１０発明のプラズマ処理装置は、
真空容器と、真空容器内にガスを供給するためのガス供
給装置と、真空容器内を排気するための排気装置と、誘
電体窓と、誘電体窓を介して真空容器内に電磁波を放射
するためのアンテナと、アンテナに周波数５０ＭＨｚ乃
至３ＧＨｚの高周波電力を供給することのできる高周波
電源と、真空容器内に基板を載置するための電極とを備
えたプラズマ処理装置であって、アンテナが基板に平行
な面に対して概ね平行な平板状または環状アンテナであ
り、かつ、誘電体窓が、基板に対向して設けられた真空
容器の凹部の側面に設けられていることを特徴とする。The plasma processing apparatus according to the tenth aspect of the present invention comprises:
A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, a dielectric window, and radiating electromagnetic waves into the vacuum container through the dielectric window. Processing apparatus, a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, and an electrode for mounting the substrate in a vacuum container, wherein the antenna is a substrate. A flat or annular antenna substantially parallel to a plane parallel to the substrate, and a dielectric window is provided on a side surface of a concave portion of a vacuum vessel provided to face the substrate.

【００２９】本願の第６、第７、第８、第９または第１
０発明のプラズマ処理装置は、真空容器内に直流磁界を
印加するためのコイルまたは永久磁石を備えていない場
合にとくに有効なプラズマ処理装置である。The sixth, seventh, eighth, ninth, or first of the present application
The plasma processing apparatus of the present invention is a plasma processing apparatus particularly effective when no coil or permanent magnet for applying a DC magnetic field is provided in the vacuum vessel.

【００３０】また、好適には、アンテナに供給する高周
波電力の周波数は５０ＭＨｚ乃至３００ＭＨｚであるこ
とが望ましい。Preferably, the frequency of the high-frequency power supplied to the antenna is 50 MHz to 300 MHz.

【００３１】[0031]

【発明の実施の形態】以下、本発明の第１実施形態につ
いて、図１及び図２を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.

【００３２】図１に、本発明の第１実施形態において用
いたプラズマ処理装置の断面図を示す。図１において、
真空容器１内に、ガス供給装置２から所定のガスを導入
しつつ、排気装置としてのポンプ３により排気を行い、
真空容器１内を所定の圧力に保ちながら、アンテナ用高
周波電源４により１００MHzの高周波電力を平板状アン
テナ５に供給することにより、誘電体窓６を介して電磁
波を真空容器１内に放射すると、真空容器１内にプラズ
マが発生し、電極７上に載置された基板８に対してエッ
チング、堆積、表面改質等のプラズマ処理を行うことが
できる。また、電極７に高周波電力を供給するための電
極用高周波電源９が設けられており、基板８に到達する
イオンエネルギーを制御することができるようになって
いる。なお、誘電体窓６は、基板８に対向する面に設け
られている。FIG. 1 is a sectional view of a plasma processing apparatus used in the first embodiment of the present invention. In FIG.
While introducing a predetermined gas from the gas supply device 2 into the vacuum vessel 1, the gas is exhausted by the pump 3 as an exhaust device,
When the high-frequency power of 100 MHz is supplied to the flat antenna 5 by the high-frequency power supply for antenna 4 while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, the electromagnetic wave is radiated into the vacuum vessel 1 through the dielectric window 6. Plasma is generated in the vacuum vessel 1, and plasma processing such as etching, deposition, and surface modification can be performed on the substrate 8 placed on the electrode 7. An electrode high-frequency power supply 9 for supplying high-frequency power to the electrode 7 is provided so that ion energy reaching the substrate 8 can be controlled. The dielectric window 6 is provided on a surface facing the substrate 8.

【００３３】平板状アンテナ５は基板８に平行な面に対
して概ね平行に設けられており、真空容器１内に放射す
る電磁波の電界が基板面に対して概ね垂直になるように
構成されている。したがって、真空容器１内で平板状ア
ンテナ５から放射される電磁波が伝搬できる通路は、図
２に示す斜線部となる。つまり、平板状アンテナ５から
放射される電磁波は、誘電体窓６に沿った部分で定在波
を形成し、真空容器１の下部まで広がらないので、ゲー
トやプラズマ発光をモニタリングするための窓等の穴内
部でホローカソード放電が発生することはない。また、
誘電体窓６と基板８とを所定の距離を隔てて構成するこ
とにより、プラズマを基板８近傍まで拡散輸送し、基板
８の近傍において均一なプラズマを得ることができる。The flat antenna 5 is provided substantially parallel to a plane parallel to the substrate 8, and is configured such that the electric field of the electromagnetic wave radiated into the vacuum vessel 1 is substantially perpendicular to the substrate surface. I have. Therefore, a passage through which the electromagnetic wave radiated from the flat antenna 5 can propagate in the vacuum vessel 1 is a hatched portion shown in FIG. That is, the electromagnetic wave radiated from the flat antenna 5 forms a standing wave at a portion along the dielectric window 6 and does not spread to the lower portion of the vacuum vessel 1, so that a gate, a window for monitoring plasma emission, etc. No hollow cathode discharge occurs inside the hole. Also,
By arranging the dielectric window 6 and the substrate 8 at a predetermined distance, the plasma can be diffused and transported to the vicinity of the substrate 8 and uniform plasma can be obtained in the vicinity of the substrate 8.

【００３４】次に、本発明の第２実施形態について、図
３を参照して説明する。図１に示した本発明の第１実施
形態において、平板状アンテナ５の外径寸法が、誘電体
窓６の外径寸法よりも小さい場合について説明したが、
図３に示すように、平板状アンテナ５の外径寸法を、誘
電体窓６の外径寸法よりも大きくなるように構成するこ
とにより、真空容器１内に放射する電磁波の電界の、基
板面に対する垂直性を高めることができる。これは、図
３のような構成にすると、図１のような構成における、
平板状アンテナ５の端部から真空容器１へ向かう電界の
向きが、基板面に対して斜めになってしまうという現象
を避けることができるからである。Next, a second embodiment of the present invention will be described with reference to FIG. In the first embodiment of the present invention shown in FIG. 1, the case where the outer diameter of the planar antenna 5 is smaller than the outer diameter of the dielectric window 6 has been described.
As shown in FIG. 3, by configuring the outer diameter of the flat antenna 5 to be larger than the outer diameter of the dielectric window 6, the electric field of the electromagnetic wave radiated into the vacuum vessel 1 is reduced on the substrate surface. Can be improved. This is because, when the configuration shown in FIG. 3 is adopted, the configuration shown in FIG.
This is because it is possible to avoid a phenomenon that the direction of the electric field from the end of the flat antenna 5 toward the vacuum vessel 1 is oblique to the substrate surface.

【００３５】次に、本発明の第３実施形態について、図
４及び図５を参照して説明する。図４に、本発明の第３
実施形態において用いたプラズマ処理装置の断面図を示
す。図４において、真空容器１内に、ガス供給装置２か
ら所定のガスを導入しつつ、排気装置としてのポンプ３
により排気を行い、真空容器１内を所定の圧力に保ちな
がら、アンテナ用高周波電源４により１００MHzの高周
波電力を環状アンテナ１０に供給することにより、誘電
体窓６を介して電磁波を真空容器１内に放射すると、真
空容器１内にプラズマが発生し、電極７上に載置された
基板８に対してエッチング、堆積、表面改質等のプラズ
マ処理を行うことができる。また、電極７に高周波電力
を供給するための電極用高周波電源９が設けられてお
り、基板８に到達するイオンエネルギーを制御すること
ができるようになっている。なお、誘電体窓６は、基板
８に対向する面に設けられている。Next, a third embodiment of the present invention will be described with reference to FIGS. FIG. 4 shows a third embodiment of the present invention.
1 shows a cross-sectional view of a plasma processing apparatus used in an embodiment. In FIG. 4, a predetermined gas is introduced from a gas supply device 2 into a vacuum vessel 1 while a pump 3 serving as an exhaust device is provided.
By supplying high-frequency power of 100 MHz to the annular antenna 10 from the high-frequency power supply for antenna 4 while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, electromagnetic waves are transmitted through the dielectric window 6 into the vacuum vessel 1. Then, plasma is generated in the vacuum vessel 1, and the substrate 8 placed on the electrode 7 can be subjected to plasma processing such as etching, deposition, and surface modification. An electrode high-frequency power supply 9 for supplying high-frequency power to the electrode 7 is provided so that ion energy reaching the substrate 8 can be controlled. The dielectric window 6 is provided on a surface facing the substrate 8.

【００３６】環状アンテナ１０は基板８に平行な面に対
して概ね平行に設けられており、真空容器１内に放射す
る電磁波の電界が基板面に対して概ね垂直になるように
構成されている。したがって、真空容器１内で環状アン
テナ１０から放射される電磁波が伝搬できる通路は、図
５に示す斜線部となる。つまり、環状アンテナ１０から
放射される電磁波は、誘電体窓６に沿った部分で定在波
を形成し、真空容器１の下部まで広がらないので、ゲー
トやプラズマ発光をモニタリングするための窓等の穴内
部でホローカソード放電が発生することはない。また、
誘電体窓６と基板８とを所定の距離を隔てて構成するこ
とにより、プラズマを基板８近傍まで拡散輸送し、基板
８の近傍において均一なプラズマを得ることができる。
とくに、小さい高周波電力を用いた場合、プラズマの高
密度部がアンテナ直下に形成される傾向があるため、平
板状アンテナ５を用いる図１や図３に示した構成より
も、環状アンテナ１０を用いる図４に示した構成の方
が、基板８に近傍においてより均一なプラズマを得るこ
とができる。The annular antenna 10 is provided substantially parallel to a plane parallel to the substrate 8, and is configured such that the electric field of an electromagnetic wave radiated into the vacuum vessel 1 is substantially perpendicular to the substrate surface. . Therefore, the passage through which the electromagnetic wave radiated from the annular antenna 10 can propagate in the vacuum vessel 1 is a hatched portion shown in FIG. That is, the electromagnetic wave radiated from the annular antenna 10 forms a standing wave at a portion along the dielectric window 6 and does not spread to the lower portion of the vacuum vessel 1, so that a gate, a window for monitoring plasma emission, etc. No hollow cathode discharge occurs inside the hole. Also,
By arranging the dielectric window 6 and the substrate 8 at a predetermined distance, the plasma can be diffused and transported to the vicinity of the substrate 8 and uniform plasma can be obtained in the vicinity of the substrate 8.
In particular, when a small high-frequency power is used, a high-density portion of plasma tends to be formed directly below the antenna. Therefore, the annular antenna 10 is used more than the configuration shown in FIGS. The configuration shown in FIG. 4 can obtain more uniform plasma near the substrate 8.

【００３７】なお、図４には、環状アンテナ１０の任意
の部分が等電位となるように、複数の電力供給部を設け
た構成を示したが、電磁波の波長に対して環状アンテナ
１０の大きさが十分小さい場合は、１カ所から電力を供
給する構成としてもよい。FIG. 4 shows a configuration in which a plurality of power supply units are provided so that an arbitrary portion of the annular antenna 10 has the same potential. If the power is sufficiently small, power may be supplied from one place.

【００３８】次に、本発明の第４実施形態について、図
６及び図７を参照して説明する。図６に、本発明の第４
実施形態において用いたプラズマ処理装置の断面図を示
す。図６において、真空容器１内に、ガス供給装置２か
ら所定のガスを導入しつつ、排気装置としてのポンプ３
により排気を行い、真空容器１内を所定の圧力に保ちな
がら、アンテナ用高周波電源４により１００MHzの高周
波電力を環状アンテナ１０に供給することにより、誘電
体窓６を介して電磁波を真空容器１内に放射すると、真
空容器１内にプラズマが発生し、電極７上に載置された
基板８に対してエッチング、堆積、表面改質等のプラズ
マ処理を行うことができる。また、電極７に高周波電力
を供給するための電極用高周波電源９が設けられてお
り、基板８に到達するイオンエネルギーを制御すること
ができるようになっている。なお、誘電体窓６は、真空
容器１の内壁面のうち基板８に概ね平行な環状部に設け
られている。Next, a fourth embodiment of the present invention will be described with reference to FIGS. FIG. 6 shows a fourth embodiment of the present invention.
1 shows a cross-sectional view of a plasma processing apparatus used in an embodiment. In FIG. 6, while introducing a predetermined gas from a gas supply device 2 into a vacuum vessel 1, a pump 3 as an exhaust device is used.
By supplying high-frequency power of 100 MHz to the annular antenna 10 from the high-frequency power supply for antenna 4 while maintaining the inside of the vacuum vessel 1 at a predetermined pressure, electromagnetic waves are transmitted through the dielectric window 6 into the vacuum vessel 1. Then, plasma is generated in the vacuum vessel 1, and the substrate 8 placed on the electrode 7 can be subjected to plasma processing such as etching, deposition, and surface modification. An electrode high-frequency power supply 9 for supplying high-frequency power to the electrode 7 is provided so that ion energy reaching the substrate 8 can be controlled. The dielectric window 6 is provided in an annular portion of the inner wall surface of the vacuum vessel 1 that is substantially parallel to the substrate 8.

【００３９】環状アンテナ１０は基板８に平行な面に対
して概ね平行に設けられており、真空容器１内に放射す
る電磁波の電界が基板面に対して概ね垂直になるように
構成されている。したがって、真空容器１内で環状アン
テナ１０から放射される電磁波が伝搬できる通路は、図
７に示す斜線部となる。つまり、環状アンテナ１０から
放射される電磁波は、誘電体窓６に沿った部分で定在波
を形成し、真空容器１の下部まで広がらないので、ゲー
トやプラズマ発光をモニタリングするための窓等の穴内
部でホローカソード放電が発生することはない。また、
誘電体窓６と基板８とを所定の距離を隔てて構成するこ
とにより、プラズマを基板８近傍まで拡散輸送し、基板
８の近傍において均一なプラズマを得ることができる。The annular antenna 10 is provided substantially parallel to a plane parallel to the substrate 8, and is configured such that the electric field of an electromagnetic wave radiated into the vacuum vessel 1 is substantially perpendicular to the substrate surface. . Therefore, the passage through which the electromagnetic wave radiated from the annular antenna 10 can propagate in the vacuum vessel 1 is a hatched portion shown in FIG. That is, the electromagnetic wave radiated from the annular antenna 10 forms a standing wave at a portion along the dielectric window 6 and does not spread to the lower portion of the vacuum vessel 1, so that a gate, a window for monitoring plasma emission, etc. No hollow cathode discharge occurs inside the hole. Also,
By arranging the dielectric window 6 and the substrate 8 at a predetermined distance, the plasma can be diffused and transported to the vicinity of the substrate 8 and uniform plasma can be obtained in the vicinity of the substrate 8.

【００４０】なお、図６には、環状アンテナ１０の任意
の部分が等電位となるように、複数の電力供給部を設け
た構成を示したが、電磁波の波長に対して環状アンテナ
１０の大きさが十分小さい場合は、１カ所から電力を供
給する構成としてもよい。FIG. 6 shows a configuration in which a plurality of power supply sections are provided so that an arbitrary portion of the annular antenna 10 has the same potential. If the power is sufficiently small, power may be supplied from one place.

【００４１】次に、本発明の第５実施形態について、図
８を参照して説明する。図７に示した本発明の第４実施
形態において、環状アンテナ１０を用いる場合について
説明したが、図８に示すように、平板状アンテナ５を用
いる構成としてもよい。また、図７では誘電体窓６より
も基板８に対向して真空容器１の凸部を設けた構成を例
示したが、図８に示すように、凸部はごく浅くてもよ
く、浅い凸部と環状アンテナ１０を組み合わせた構成
や、深い凸部と平板状アンテナ５を組み合わせた構成も
可能である。Next, a fifth embodiment of the present invention will be described with reference to FIG. In the fourth embodiment of the present invention shown in FIG. 7, the case where the annular antenna 10 is used has been described. However, as shown in FIG. 8, a configuration using the flat antenna 5 may be used. Further, in FIG. 7, the configuration in which the convex portion of the vacuum vessel 1 is provided so as to face the substrate 8 rather than the dielectric window 6 is illustrated. However, as shown in FIG. 8, the convex portion may be very shallow, It is also possible to adopt a configuration in which the antenna unit and the annular antenna 10 are combined, or a configuration in which the deep protrusion and the flat antenna 5 are combined.

【００４２】次に、本発明の第６実施形態について、図
９及び図１０を参照して説明する。図９に、本発明の第
６実施形態において用いたプラズマ処理装置の断面図を
示す。図９において、真空容器１内に、ガス供給装置２
から所定のガスを導入しつつ、排気装置としてのポンプ
３により排気を行い、真空容器１内を所定の圧力に保ち
ながら、アンテナ用高周波電源４により１００MHzの高
周波電力を環状アンテナ１０に供給することにより、誘
電体窓６を介して電磁波を真空容器１内に放射すると、
真空容器１内にプラズマが発生し、電極７上に載置され
た基板８に対してエッチング、堆積、表面改質等のプラ
ズマ処理を行うことができる。また、電極７に高周波電
力を供給するための電極用高周波電源９が設けられてお
り、基板８に到達するイオンエネルギーを制御すること
ができるようになっている。なお、誘電体窓６は、真空
容器１の側面に設けられている。Next, a sixth embodiment of the present invention will be described with reference to FIGS. FIG. 9 shows a sectional view of a plasma processing apparatus used in the sixth embodiment of the present invention. In FIG. 9, a gas supply device 2 is provided in a vacuum vessel 1.
A high-frequency power of 100 MHz is supplied to the annular antenna 10 by the high-frequency power source 4 for the antenna while evacuating by the pump 3 as an exhaust device while introducing a predetermined gas from the apparatus, and maintaining the inside of the vacuum vessel 1 at a predetermined pressure. As a result, when an electromagnetic wave is radiated into the vacuum vessel 1 through the dielectric window 6,
Plasma is generated in the vacuum vessel 1, and plasma processing such as etching, deposition, and surface modification can be performed on the substrate 8 placed on the electrode 7. An electrode high-frequency power supply 9 for supplying high-frequency power to the electrode 7 is provided so that ion energy reaching the substrate 8 can be controlled. Note that the dielectric window 6 is provided on a side surface of the vacuum vessel 1.

【００４３】環状アンテナ１０は基板８に平行な面に対
して概ね平行に設けられており、真空容器１内に放射す
る電磁波の電界が基板面に対して概ね垂直になるように
構成されている。したがって、真空容器１内で環状アン
テナ１０から放射される電磁波が伝搬できる通路は、図
１０に示す斜線部となる。つまり、環状アンテナ１０か
ら放射される電磁波は、基板８に対向する面内で定在波
を形成し、真空容器１の下部まで広がらないので、ゲー
トやプラズマ発光をモニタリングするための窓等の穴内
部でホローカソード放電が発生することはない。また、
誘電体窓６と基板８とを所定の距離を隔てて構成するこ
とにより、プラズマを基板８近傍まで拡散輸送し、基板
８の近傍において均一なプラズマを得ることができる。The annular antenna 10 is provided substantially parallel to a plane parallel to the substrate 8, and is configured such that the electric field of an electromagnetic wave radiated into the vacuum vessel 1 is substantially perpendicular to the substrate surface. . Therefore, a passage through which the electromagnetic wave radiated from the annular antenna 10 can propagate in the vacuum vessel 1 is a hatched portion shown in FIG. That is, the electromagnetic wave radiated from the annular antenna 10 forms a standing wave in the plane facing the substrate 8 and does not spread to the lower part of the vacuum vessel 1, so that a hole such as a gate or a window for monitoring plasma emission is formed. No hollow cathode discharge occurs inside. Also,
By arranging the dielectric window 6 and the substrate 8 at a predetermined distance, the plasma can be diffused and transported to the vicinity of the substrate 8 and uniform plasma can be obtained in the vicinity of the substrate 8.

【００４４】なお、図９には、環状アンテナ１０の任意
の部分が等電位となるように、複数の電力供給部を設け
た構成を示したが、電磁波の波長に対して環状アンテナ
１０の大きさが十分小さい場合は、１カ所から電力を供
給する構成としてもよい。FIG. 9 shows a configuration in which a plurality of power supply units are provided so that an arbitrary portion of the annular antenna 10 has the same potential. If the power is sufficiently small, power may be supplied from one place.

【００４５】次に、本発明の第７実施形態について、図
１１を参照して説明する。図９に示した本発明の第６実
施形態において、誘電体窓６が、真空容器１の側面に設
けられている構成を例示したが、図１１に示すように、
基板に対向して設けられた真空容器１の凸部の側面に、
誘電体窓６を設ける構成としてもよい。このような構成
にすると、図９に示した構成と比べて、プラズマの高密
度部が真空容器１の内側よりに形成される。Next, a seventh embodiment of the present invention will be described with reference to FIG. In the sixth embodiment of the present invention shown in FIG. 9, the configuration in which the dielectric window 6 is provided on the side surface of the vacuum vessel 1 has been exemplified, but as shown in FIG.
On the side surface of the convex portion of the vacuum vessel 1 provided facing the substrate,
A configuration in which the dielectric window 6 is provided may be employed. With such a configuration, a high-density portion of plasma is formed inside the vacuum vessel 1 as compared with the configuration shown in FIG.

【００４６】次に、本発明の第８実施形態について、図
１２及び図１３を参照して説明する。Next, an eighth embodiment of the present invention will be described with reference to FIGS.

【００４７】図９及び図１１に示した本発明の第６及び
第７実施形態において、環状アンテナ１０を用いる場合
について説明したが、図１２または図１３に示すよう
に、平板状アンテナ５を用いる構成としてもよい。In the sixth and seventh embodiments of the present invention shown in FIGS. 9 and 11, the case where the annular antenna 10 is used has been described. As shown in FIG. 12 or 13, the flat antenna 5 is used. It may be configured.

【００４８】次に、本発明の第９実施形態について、図
１４及び図１５を参照して説明する。Next, a ninth embodiment of the present invention will be described with reference to FIGS.

【００４９】図９及び図１１に示した本発明の第６及び
第７実施形態において、環状アンテナ１０の直下が空気
層である場合について説明したが、図１４または図１５
に示すように、環状アンテナ１０の直下まで誘電体窓６
を延長させた構成としてもよい。In the sixth and seventh embodiments of the present invention shown in FIGS. 9 and 11, the case where the air layer is directly under the annular antenna 10 has been described.
As shown in FIG.
May be extended.

【００５０】次に、本発明の第１０実施形態について、
図１６、図１７及び図１８を参照して説明する。Next, a tenth embodiment of the present invention will be described.
This will be described with reference to FIGS.

【００５１】図１６に、本発明の第１０実施形態におい
て用いたプラズマ処理装置の断面図を示す。図１６にお
いて、真空容器１内に、ガス供給装置２から所定のガス
を導入しつつ、排気装置としてのポンプ３により排気を
行い、真空容器１内を所定の圧力に保ちながら、アンテ
ナ用高周波電源４により１００MHzの高周波電力を平板
状アンテナ５に供給することにより、誘電体窓６を介し
て電磁波を真空容器１内に放射すると、真空容器１内に
プラズマが発生し、電極７上に載置された基板８に対し
てエッチング、堆積、表面改質等のプラズマ処理を行う
ことができる。また、電極７に高周波電力を供給するた
めの電極用高周波電源９が設けられており、基板８に到
達するイオンエネルギーを制御することができるように
なっている。なお、誘電体窓６は、基板８に対向して設
けられた真空容器１の凹部の側面に設けられており、金
属製の天板１１で支えられている。金属製天板１１の斜
視図を図１７に示す。FIG. 16 is a sectional view of a plasma processing apparatus used in the tenth embodiment of the present invention. In FIG. 16, while introducing a predetermined gas from the gas supply device 2 into the vacuum container 1, the pump 3 as an exhaust device is evacuated, and while maintaining the vacuum container 1 at a predetermined pressure, the high-frequency power supply for the antenna is used. When an electromagnetic wave is radiated into the vacuum vessel 1 through the dielectric window 6 by supplying a high-frequency power of 100 MHz to the flat antenna 5 by 4, plasma is generated in the vacuum vessel 1 and placed on the electrode 7. The processed substrate 8 can be subjected to plasma processing such as etching, deposition, and surface modification. An electrode high-frequency power supply 9 for supplying high-frequency power to the electrode 7 is provided so that ion energy reaching the substrate 8 can be controlled. The dielectric window 6 is provided on the side surface of the concave portion of the vacuum vessel 1 provided to face the substrate 8 and is supported by a metal top plate 11. FIG. 17 shows a perspective view of the metal top plate 11.

【００５２】平板状アンテナ５は基板８に平行な面に対
して概ね平行に設けられており、真空容器１内に放射す
る電磁波の電界が基板面に対して概ね垂直になるように
構成されている。したがって、真空容器１内で平板状ア
ンテナ５から放射される電磁波が伝搬できる通路は、図
１８に示す斜線部となる。つまり、平板状アンテナ５か
ら放射される電磁波は、基板８に対向する面内で定在波
を形成し、真空容器１の下部まで広がらないので、ゲー
トやプラズマ発光をモニタリングするための窓等の穴内
部でホローカソード放電が発生することはない。また、
誘電体窓６と基板８とを所定の距離を隔てて構成するこ
とにより、プラズマを基板８近傍まで拡散輸送し、基板
８の近傍において均一なプラズマを得ることができる。The flat antenna 5 is provided substantially parallel to a plane parallel to the substrate 8, and is configured such that the electric field of the electromagnetic wave radiated into the vacuum vessel 1 is substantially perpendicular to the substrate surface. I have. Therefore, the passage through which the electromagnetic wave radiated from the flat antenna 5 can propagate in the vacuum vessel 1 is a hatched portion shown in FIG. That is, the electromagnetic wave radiated from the flat antenna 5 forms a standing wave in the plane facing the substrate 8 and does not spread to the lower part of the vacuum vessel 1, so that a gate, a window for monitoring plasma emission, etc. No hollow cathode discharge occurs inside the hole. Also,
By arranging the dielectric window 6 and the substrate 8 at a predetermined distance, the plasma can be diffused and transported to the vicinity of the substrate 8 and uniform plasma can be obtained in the vicinity of the substrate 8.

【００５３】次に、本発明の第１１実施形態について、
図１９を参照して説明する。図１６に示した本発明の第
１０実施形態において、平板状アンテナ５の外径寸法
が、誘電体窓６の内径寸法よりも小さい場合について説
明したが、図１９に示すように、平板状アンテナ５の外
径寸法を、誘電体窓６の内径寸法よりも大きくなるよう
に構成してもよい。Next, regarding the eleventh embodiment of the present invention,
This will be described with reference to FIG. In the tenth embodiment of the present invention shown in FIG. 16, the case where the outer diameter of the planar antenna 5 is smaller than the inner diameter of the dielectric window 6 has been described. However, as shown in FIG. The outer diameter of 5 may be configured to be larger than the inner diameter of the dielectric window 6.

【００５４】次に、本発明の第１２実施形態について、
図２０を参照して説明する。図１６に示した本発明の第
１０実施形態において、平板状アンテナ５を用いる場合
について説明したが、図２０に示すように、環状アンテ
ナ１０を用いる構成としてもよい。Next, a twelfth embodiment of the present invention will be described.
This will be described with reference to FIG. In the tenth embodiment of the present invention shown in FIG. 16, the case where the flat antenna 5 is used has been described. However, as shown in FIG. 20, a configuration using the ring antenna 10 may be used.

【００５５】次に、本発明の第１３実施形態について、
図２１を参照して説明する。図１６に示した本発明の第
１０実施形態において、平板状アンテナ５の直下が空気
層である場合について説明したが、図２１に示すよう
に、平板状アンテナ５の直下まで誘電体窓６を延長させ
た構成としてもよい。Next, a thirteenth embodiment of the present invention will be described.
This will be described with reference to FIG. In the tenth embodiment of the present invention shown in FIG. 16, the case where the air layer is directly under the flat antenna 5 has been described. However, as shown in FIG. The configuration may be extended.

【００５６】以上述べた本発明の実施形態においては、
本発明の適用範囲のうち、真空容器の形状、アンテナの
形状及び配置、誘電体窓の形状及び配置に関して様々な
バリエーションのうちの一部を例示したに過ぎない。本
発明の適用にあたり、ここで例示した以外にも様々なバ
リエーションが考えられることは、いうまでもない。In the embodiment of the present invention described above,
Within the scope of the present invention, only some of the various variations are illustrated with respect to the shape of the vacuum vessel, the shape and arrangement of the antenna, and the shape and arrangement of the dielectric window. In applying the present invention, it goes without saying that various variations other than those exemplified here are possible.

【００５７】また、以上述べた本発明の実施形態におい
て、アンテナに１００ＭＨｚの高周波電力を供給する場
合について説明したが、アンテナの形態や周波数はこれ
に限定されるものではなく、５０ＭＨｚ乃至３ＧＨｚの
周波数を用いるプラズマ処理方法及び装置において、本
発明は有効である。とくに、５０ＭＨｚ乃至３００ＭＨ
ｚの周波数を用いた場合、低圧力下でも放電が開始しや
すいという利点があるため、低圧力下で基板を処理した
い場合はこの範囲の周波数を用いることが望ましい。Further, in the above-described embodiment of the present invention, the case where high-frequency power of 100 MHz is supplied to the antenna has been described. However, the form and frequency of the antenna are not limited to this, and the frequency of 50 MHz to 3 GHz is not limited thereto. The present invention is effective in a plasma processing method and apparatus using the method. Especially, 50MHz to 300MHZ
When the frequency z is used, there is an advantage that the discharge is easily started even under a low pressure. Therefore, when the substrate is to be processed under a low pressure, a frequency in this range is desirably used.

【００５８】また、以上述べた本発明の実施形態におい
て、真空容器内に直流磁界が存在しない場合について説
明したが、電磁波がプラズマ中に浸入できるようになる
ほどの大きな直流磁界が存在しない場合、例えば、着火
性の改善のために数十ガウス程度の小さな直流磁界を用
いる場合においても、本発明は有効である。しかし、本
発明は、真空容器内に直流磁界が存在しない場合にとく
に有効である。In the embodiment of the present invention described above, the case where no DC magnetic field exists in the vacuum vessel has been described. However, when there is no DC magnetic field large enough to allow electromagnetic waves to enter the plasma, for example, The present invention is effective even when a small DC magnetic field of about several tens of gauss is used to improve the ignitability. However, the present invention is particularly effective when no DC magnetic field exists in the vacuum vessel.

【００５９】[0059]

【発明の効果】以上の説明から明らかなように、本願の
第１発明のプラズマ処理方法によれば、真空容器内にガ
スを供給しつつ真空容器内を排気し、真空容器内を所定
の圧力に制御しながら、真空容器内の電極に載置された
基板に概ね平行な平板状アンテナに周波数５０ＭＨｚ乃
至３ＧＨｚの高周波電力を供給することにより、真空容
器の内壁面のうち基板に対向する面に設けられた誘電体
窓を介して真空容器内に電磁波を放射することによっ
て、真空容器内にプラズマを発生させ、基板を処理する
ため、均一なプラズマを発生させることができ、かつ、
処理速度の基板面内均一性の悪化や、固体材料のスパッ
タリングによる基板への不純物混入の原因となるような
ホローカソード放電の発生を抑制できる。As is clear from the above description, according to the plasma processing method of the first invention of the present application, the inside of the vacuum vessel is evacuated while supplying the gas into the vacuum vessel, and the inside of the vacuum vessel is maintained at a predetermined pressure. By supplying high-frequency power having a frequency of 50 MHz to 3 GHz to a flat antenna substantially parallel to the substrate mounted on the electrode in the vacuum container while controlling the inner wall surface of the vacuum container, By radiating electromagnetic waves into the vacuum vessel through the provided dielectric window, plasma is generated in the vacuum vessel and a uniform plasma can be generated for processing the substrate, and
It is possible to suppress the occurrence of hollow cathode discharge which may cause deterioration of the uniformity of the processing speed in the plane of the substrate and the mixing of impurities into the substrate due to the sputtering of the solid material.

【００６０】また、本願の第２発明のプラズマ処理方法
によれば、真空容器内にガスを供給しつつ真空容器内を
排気し、真空容器内を所定の圧力に制御しながら、真空
容器内の電極に載置された基板に概ね平行な環状アンテ
ナに周波数５０ＭＨｚ乃至３ＧＨｚの高周波電力を供給
することにより、真空容器の内壁面のうち基板に対向す
る面に設けられた誘電体窓を介して真空容器内に電磁波
を放射することによって、真空容器内にプラズマを発生
させ、基板を処理するため、均一なプラズマを発生させ
ることができ、かつ、処理速度の基板面内均一性の悪化
や、固体材料のスパッタリングによる基板への不純物混
入の原因となるようなホローカソード放電の発生を抑制
できる。Further, according to the plasma processing method of the second aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled while controlling the inside of the vacuum vessel to a predetermined pressure. By supplying high-frequency power having a frequency of 50 MHz to 3 GHz to an annular antenna substantially parallel to the substrate mounted on the electrode, a vacuum is applied through a dielectric window provided on the inner wall surface of the vacuum vessel facing the substrate. By radiating electromagnetic waves into the container, a plasma is generated in the vacuum container and the substrate is processed, so that uniform plasma can be generated. It is possible to suppress the occurrence of hollow cathode discharge which may cause impurities to be mixed into the substrate due to sputtering of a material.

【００６１】また、本願の第３発明のプラズマ処理方法
によれば、真空容器内にガスを供給しつつ真空容器内を
排気し、真空容器内を所定の圧力に制御しながら、真空
容器内の電極に載置された基板に概ね平行な平板状また
は環状アンテナに周波数５０ＭＨｚ乃至３ＧＨｚの高周
波電力を供給することにより、真空容器の内壁面のうち
基板に概ね平行な環状部に設けられた誘電体窓を介して
真空容器内に電磁波を放射することによって、真空容器
内にプラズマを発生させ、基板を処理するため、均一な
プラズマを発生させることができ、かつ、処理速度の基
板面内均一性の悪化や、固体材料のスパッタリングによ
る基板への不純物混入の原因となるようなホローカソー
ド放電の発生を抑制できる。Further, according to the plasma processing method of the third invention of the present application, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled at a predetermined pressure. By supplying high-frequency power having a frequency of 50 MHz to 3 GHz to a flat or annular antenna substantially parallel to the substrate mounted on the electrode, a dielectric member provided in an annular portion of the inner wall surface of the vacuum vessel substantially parallel to the substrate. By radiating electromagnetic waves into the vacuum chamber through the window, plasma is generated in the vacuum chamber and the substrate is processed, so that uniform plasma can be generated, and the processing speed is uniform within the substrate surface. And the occurrence of hollow cathode discharge that causes impurities to be mixed into the substrate due to sputtering of a solid material can be suppressed.

【００６２】また、本願の第４発明のプラズマ処理方法
によれば、真空容器内にガスを供給しつつ真空容器内を
排気し、真空容器内を所定の圧力に制御しながら、真空
容器内の電極に載置された基板に概ね平行な平板状また
は環状アンテナに周波数５０ＭＨｚ乃至３ＧＨｚの高周
波電力を供給することにより、真空容器の側面に設けら
れた誘電体窓を介して真空容器内に電磁波を放射するこ
とによって、真空容器内にプラズマを発生させ、基板を
処理するため、均一なプラズマを発生させることがで
き、かつ、処理速度の基板面内均一性の悪化や、固体材
料のスパッタリングによる基板への不純物混入の原因と
なるようなホローカソード放電の発生を抑制できる。According to the plasma processing method of the fourth aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled while controlling the inside of the vacuum vessel to a predetermined pressure. By supplying high-frequency power of a frequency of 50 MHz to 3 GHz to a flat or annular antenna substantially parallel to the substrate mounted on the electrode, electromagnetic waves are introduced into the vacuum vessel through a dielectric window provided on the side of the vacuum vessel. By radiating, a plasma is generated in the vacuum vessel and the substrate is processed, so that a uniform plasma can be generated. It is possible to suppress the occurrence of hollow cathode discharge that may cause impurities to enter the semiconductor device.

【００６３】また、本願の第５発明のプラズマ処理方法
によれば、真空容器内にガスを供給しつつ真空容器内を
排気し、真空容器内を所定の圧力に制御しながら、真空
容器内の電極に載置された基板に概ね平行な平板状また
は環状アンテナに周波数５０ＭＨｚ乃至３ＧＨｚの高周
波電力を供給することにより、誘電体窓を介して真空容
器内に電磁波を放射することによって、真空容器内にプ
ラズマを発生させ、基板を処理するプラズマ処理方法で
あって、誘電体窓が、基板に対向して設けられた真空容
器の凹部の側面に設けられているため、均一なプラズマ
を発生させることができ、かつ、処理速度の基板面内均
一性の悪化や、固体材料のスパッタリングによる基板へ
の不純物混入の原因となるようなホローカソード放電の
発生を抑制できる。According to the plasma processing method of the fifth aspect of the present invention, the inside of the vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled at a predetermined pressure. By supplying high-frequency power having a frequency of 50 MHz to 3 GHz to a flat or annular antenna substantially parallel to the substrate mounted on the electrode, and radiating electromagnetic waves into the vacuum vessel through the dielectric window, the inside of the vacuum vessel is reduced. A plasma processing method for generating plasma and processing a substrate, wherein a dielectric window is provided on a side surface of a concave portion of a vacuum container provided opposite to the substrate, so that uniform plasma is generated. And the occurrence of hollow cathode discharge, which causes deterioration of the uniformity of the processing speed in the substrate surface and the contamination of the substrate with impurities due to sputtering of a solid material, can be suppressed.

【００６４】また、本願の第６発明のプラズマ処理装置
によれば、真空容器と、真空容器内にガスを供給するた
めのガス供給装置と、真空容器内を排気するための排気
装置と、真空容器の内壁面のうち基板に対向する面に設
けられた誘電体窓と、誘電体窓を介して真空容器内に電
磁波を放射するためのアンテナと、アンテナに周波数５
０ＭＨｚ乃至３ＧＨｚの高周波電力を供給することので
きる高周波電源と、真空容器内に基板を載置するための
電極とを備えたプラズマ処理装置であって、アンテナが
基板に平行な面に対して概ね平行な平板状アンテナであ
るため、均一なプラズマを発生させることができ、か
つ、処理速度の基板面内均一性の悪化や、固体材料のス
パッタリングによる基板への不純物混入の原因となるよ
うなホローカソード放電の発生を抑制できる。Further, according to the plasma processing apparatus of the sixth aspect of the present invention, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A dielectric window provided on the inner wall surface of the container facing the substrate; an antenna for radiating electromagnetic waves into the vacuum container through the dielectric window;
A plasma processing apparatus comprising: a high-frequency power supply capable of supplying high-frequency power of 0 MHz to 3 GHz; and an electrode for mounting a substrate in a vacuum vessel, wherein the antenna is substantially parallel to a plane parallel to the substrate. The parallel flat antenna can generate uniform plasma, and also has a hollow surface that causes deterioration of in-plane uniformity of processing speed and contamination of the substrate due to sputtering of solid material. Cathode discharge can be suppressed.

【００６５】また、本願の第７発明のプラズマ処理装置
によれば、真空容器と、真空容器内にガスを供給するた
めのガス供給装置と、真空容器内を排気するための排気
装置と、真空容器の内壁面のうち基板に対向する面に設
けられた誘電体窓と、誘電体窓を介して真空容器内に電
磁波を放射するためのアンテナと、アンテナに周波数５
０ＭＨｚ乃至３ＧＨｚの高周波電力を供給することので
きる高周波電源と、真空容器内に基板を載置するための
電極とを備えたプラズマ処理装置であって、アンテナが
基板に平行な面に対して概ね平行な平板状アンテナであ
るため、均一なプラズマを発生させることができ、か
つ、処理速度の基板面内均一性の悪化や、固体材料のス
パッタリングによる基板への不純物混入の原因となるよ
うなホローカソード放電の発生を抑制できる。Further, according to the plasma processing apparatus of the seventh aspect of the present invention, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A dielectric window provided on the inner wall surface of the container facing the substrate; an antenna for radiating electromagnetic waves into the vacuum container through the dielectric window;
A plasma processing apparatus comprising: a high-frequency power supply capable of supplying high-frequency power of 0 MHz to 3 GHz; and an electrode for mounting a substrate in a vacuum vessel, wherein the antenna is substantially parallel to a plane parallel to the substrate. The parallel flat antenna can generate uniform plasma, and also has a hollow surface that causes deterioration of in-plane uniformity of processing speed and contamination of the substrate due to sputtering of solid material. Cathode discharge can be suppressed.

【００６６】また、本願の第８発明のプラズマ処理装置
によれば、真空容器と、真空容器内にガスを供給するた
めのガス供給装置と、真空容器内を排気するための排気
装置と、真空容器の内壁面のうち基板に概ね平行な環状
部に設けられた誘電体窓と、誘電体窓を介して真空容器
内に電磁波を放射するためのアンテナと、アンテナに周
波数５０ＭＨｚ乃至３ＧＨｚの高周波電力を供給するこ
とのできる高周波電源と、真空容器内に基板を載置する
ための電極とを備えたプラズマ処理装置であって、アン
テナが基板に平行な面に対して概ね平行な平板状または
環状アンテナであるため、均一なプラズマを発生させる
ことができ、かつ、処理速度の基板面内均一性の悪化
や、固体材料のスパッタリングによる基板への不純物混
入の原因となるようなホローカソード放電の発生を抑制
できる。Further, according to the plasma processing apparatus of the eighth aspect of the present invention, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A dielectric window provided in an annular portion substantially parallel to the substrate on the inner wall surface of the container, an antenna for radiating electromagnetic waves into the vacuum container through the dielectric window, and a high frequency power of 50 MHz to 3 GHz applied to the antenna A plasma processing apparatus comprising: a high-frequency power supply capable of supplying a substrate; and an electrode for mounting the substrate in a vacuum vessel, wherein the antenna has a flat or annular shape substantially parallel to a plane parallel to the substrate. Since the antenna is used, uniform plasma can be generated, and the uniformity of the processing speed in the substrate surface is deteriorated, and impurities may be mixed into the substrate due to sputtering of a solid material. The generation of hollow cathode discharge can be suppressed.

【００６７】また、本願の第９発明のプラズマ処理装置
によれば、真空容器と、真空容器内にガスを供給するた
めのガス供給装置と、真空容器内を排気するための排気
装置と、真空容器の側面に設けられた誘電体窓と、誘電
体窓を介して真空容器内に電磁波を放射するためのアン
テナと、アンテナに周波数５０ＭＨｚ乃至３ＧＨｚの高
周波電力を供給することのできる高周波電源と、真空容
器内に基板を載置するための電極とを備えたプラズマ処
理装置であって、アンテナが基板に平行な面に対して概
ね平行な平板状または環状アンテナであるため、均一な
プラズマを発生させることができ、かつ、処理速度の基
板面内均一性の悪化や、固体材料のスパッタリングによ
る基板への不純物混入の原因となるようなホローカソー
ド放電の発生を抑制できる。Further, according to the plasma processing apparatus of the ninth aspect of the present invention, a vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, A dielectric window provided on the side surface of the container, an antenna for radiating electromagnetic waves into the vacuum container through the dielectric window, a high-frequency power supply capable of supplying high-frequency power of a frequency of 50 MHz to 3 GHz to the antenna, This is a plasma processing apparatus equipped with an electrode for placing a substrate in a vacuum vessel, and generates a uniform plasma because the antenna is a flat or annular antenna that is generally parallel to a plane parallel to the substrate. And suppresses the occurrence of hollow cathode discharge, which causes deterioration of the in-plane uniformity of the processing speed and impurities mixed into the substrate due to the sputtering of a solid material. It can be.

【００６８】また、本願の第１０発明のプラズマ処理装
置によれば、真空容器と、真空容器内にガスを供給する
ためのガス供給装置と、真空容器内を排気するための排
気装置と、誘電体窓と、誘電体窓を介して真空容器内に
電磁波を放射するためのアンテナと、アンテナに周波数
５０ＭＨｚ乃至３ＧＨｚの高周波電力を供給することの
できる高周波電源と、真空容器内に基板を載置するため
の電極とを備えたプラズマ処理装置であって、アンテナ
が基板に平行な面に対して概ね平行な平板状または環状
アンテナであり、かつ、誘電体窓が、基板に対向して設
けられた真空容器の凹部の側面に設けられているため、
均一なプラズマを発生させることができ、かつ、処理速
度の基板面内均一性の悪化や、固体材料のスパッタリン
グによる基板への不純物混入の原因となるようなホロー
カソード放電の発生を抑制できる。According to the plasma processing apparatus of the tenth aspect of the present invention, a vacuum vessel, a gas supply apparatus for supplying gas into the vacuum vessel, an exhaust apparatus for exhausting the inside of the vacuum vessel, A body window, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, and a substrate mounted in the vacuum vessel A plasma processing apparatus provided with an electrode for performing the operation, wherein the antenna is a flat or annular antenna substantially parallel to a plane parallel to the substrate, and a dielectric window is provided to face the substrate. Because it is provided on the side of the concave part of the vacuum container,
Uniform plasma can be generated, and the occurrence of hollow cathode discharge that causes deterioration in uniformity of the processing speed within the substrate surface and contamination of the substrate by impurities due to sputtering of a solid material can be suppressed.

[Brief description of the drawings]

【図１】本発明の第１実施形態で用いたプラズマ処理装
置の構成を示す断面図FIG. 1 is a sectional view showing a configuration of a plasma processing apparatus used in a first embodiment of the present invention.

【図２】本発明の第１実施形態における、平板状アンテ
ナから放射される電磁波が伝搬できる通路を示す断面図FIG. 2 is a cross-sectional view showing a passage through which an electromagnetic wave radiated from a flat antenna can propagate in the first embodiment of the present invention.

【図３】本発明の第２実施形態で用いたプラズマ処理装
置の構成を示す断面図FIG. 3 is a sectional view showing a configuration of a plasma processing apparatus used in a second embodiment of the present invention.

【図４】本発明の第３実施形態で用いたプラズマ処理装
置の構成を示す断面図FIG. 4 is a sectional view showing a configuration of a plasma processing apparatus used in a third embodiment of the present invention.

【図５】本発明の第３実施形態における、環状アンテナ
から放射される電磁波が伝搬できる通路を示す断面図FIG. 5 is a sectional view showing a passage through which an electromagnetic wave radiated from a ring antenna can propagate in a third embodiment of the present invention.

【図６】本発明の第４実施形態で用いたプラズマ処理装
置の構成を示す断面図FIG. 6 is a sectional view showing a configuration of a plasma processing apparatus used in a fourth embodiment of the present invention.

【図７】本発明の第４実施形態における、環状アンテナ
から放射される電磁波が伝搬できる通路を示す断面図FIG. 7 is a cross-sectional view showing a passage through which an electromagnetic wave radiated from a ring antenna can propagate in a fourth embodiment of the present invention.

【図８】本発明の第５実施形態で用いたプラズマ処理装
置の構成を示す断面図FIG. 8 is a sectional view showing a configuration of a plasma processing apparatus used in a fifth embodiment of the present invention.

【図９】本発明の第６実施形態で用いたプラズマ処理装
置の構成を示す断面図FIG. 9 is a sectional view showing a configuration of a plasma processing apparatus used in a sixth embodiment of the present invention.

【図１０】本発明の第６実施形態における、環状アンテ
ナから放射される電磁波が伝搬できる通路を示す断面図FIG. 10 is a cross-sectional view illustrating a passage through which an electromagnetic wave radiated from a ring antenna can propagate in a sixth embodiment of the present invention.

【図１１】本発明の第７実施形態で用いたプラズマ処理
装置の構成を示す断面図FIG. 11 is a sectional view showing a configuration of a plasma processing apparatus used in a seventh embodiment of the present invention.

【図１２】本発明の第８実施形態で用いたプラズマ処理
装置の構成を示す断面図FIG. 12 is a sectional view showing a configuration of a plasma processing apparatus used in an eighth embodiment of the present invention.

【図１３】本発明の第８実施形態で用いたプラズマ処理
装置の構成を示す断面図FIG. 13 is a sectional view showing a configuration of a plasma processing apparatus used in an eighth embodiment of the present invention.

【図１４】本発明の第９実施形態で用いたプラズマ処理
装置の構成を示す断面図FIG. 14 is a sectional view showing a configuration of a plasma processing apparatus used in a ninth embodiment of the present invention.

【図１５】本発明の第９実施形態で用いたプラズマ処理
装置の構成を示す断面図FIG. 15 is a sectional view showing a configuration of a plasma processing apparatus used in a ninth embodiment of the present invention.

【図１６】本発明の第１０実施形態で用いたプラズマ処
理装置の構成を示す断面図FIG. 16 is a sectional view showing a configuration of a plasma processing apparatus used in a tenth embodiment of the present invention.

【図１７】本発明の第１０実施形態における、金属製天
板の斜視図FIG. 17 is a perspective view of a metal top plate according to the tenth embodiment of the present invention.

【図１８】本発明の第１０実施形態における、平板状ア
ンテナから放射される電磁波が伝搬できる通路を示す断
面図FIG. 18 is a cross-sectional view illustrating a path through which an electromagnetic wave radiated from a flat antenna can propagate in a tenth embodiment of the present invention.

【図１９】本発明の第１１実施形態で用いたプラズマ処
理装置の構成を示す断面図FIG. 19 is a sectional view showing a configuration of a plasma processing apparatus used in an eleventh embodiment of the present invention.

【図２０】本発明の第１２実施形態で用いたプラズマ処
理装置の構成を示す断面図FIG. 20 is a sectional view showing a configuration of a plasma processing apparatus used in a twelfth embodiment of the present invention.

【図２１】本発明の第１３実施形態で用いたプラズマ処
理装置の構成を示す断面図FIG. 21 is a sectional view showing a configuration of a plasma processing apparatus used in a thirteenth embodiment of the present invention;

【図２２】従来例で用いたプラズマ処理装置の構成を示
す斜視図FIG. 22 is a perspective view showing a configuration of a plasma processing apparatus used in a conventional example.

【図２３】従来例で用いたプラズマ処理装置の構成を示
す斜視図FIG. 23 is a perspective view showing a configuration of a plasma processing apparatus used in a conventional example.

【図２４】従来例における、真空容器の内壁近傍の状態
を示す模式図FIG. 24 is a schematic view showing a state near the inner wall of a vacuum vessel in a conventional example.

【図２５】従来例における、電磁波が伝搬できる通路を
示す模式図FIG. 25 is a schematic view showing a passage through which an electromagnetic wave can propagate in a conventional example.

【図２６】従来例における、アンテナから放射された電
磁波が実際に伝搬できる通路を示す模式図FIG. 26 is a schematic view showing a path in which electromagnetic waves radiated from an antenna can actually propagate in a conventional example.

[Explanation of symbols]

１・・・真空容器２・・・ガス供給ユニット３・・・ポンプ４・・・アンテナ用高周波電源５・・・平板状アンテナ６・・・誘電体窓７・・・電極８・・・基板９・・・電極用高周波電源 DESCRIPTION OF SYMBOLS 1 ... Vacuum container 2 ... Gas supply unit 3 ... Pump 4 ... High frequency power supply for antennas 5 ... Flat antenna 6 ... Dielectric window 7 ... Electrode 8 ... Substrate 9 ... High frequency power supply for electrode

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.⁶ 識別記号ＦＩＨ０１Ｌ 21/205 Ｈ０１Ｌ 21/205 21/3065 21/302 Ｂ (72)発明者渡辺彰三大阪府門真市大字門真1006番地松下電器産業株式会社内──────────────────────────────────────────────────続き Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/205 H01L 21/205 21/3065 21/302 B (72) Inventor Shozo Watanabe 1006 Kazuma Kazuma, Kadoma City, Osaka Matsushita Electric Sangyo Co., Ltd.

Claims

[Claims]

1. While evacuating the inside of a vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure,
By supplying high-frequency power having a frequency of 50 MHz to 3 GHz to a flat antenna substantially parallel to a substrate placed on an electrode in a vacuum container, a dielectric material is provided on a surface of the inner wall surface of the vacuum container facing the substrate. A plasma processing method, comprising: irradiating an electromagnetic wave into a vacuum vessel through a window to generate plasma in the vacuum vessel to process a substrate.

2. The plasma processing method according to claim 1, wherein the outer diameter of the flat antenna is larger than the outer diameter of the dielectric window.

3. While evacuating the inside of the vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure,
A dielectric window provided on a surface of the inner wall surface of the vacuum vessel facing the substrate by supplying high-frequency power having a frequency of 50 MHz to 3 GHz to an annular antenna substantially parallel to the substrate placed on the electrode in the vacuum vessel. A plasma processing method comprising: generating plasma in a vacuum vessel by radiating an electromagnetic wave into the vacuum vessel via the substrate; and processing the substrate.

4. While evacuating the inside of the vacuum vessel while supplying gas into the vacuum vessel, and controlling the inside of the vacuum vessel to a predetermined pressure,
By supplying high-frequency power of a frequency of 50 MHz to 3 GHz to a flat or annular antenna substantially parallel to a substrate placed on an electrode in a vacuum container, the antenna is provided in an annular portion of the inner wall surface of the vacuum container substantially parallel to the substrate. A plasma processing method comprising: irradiating an electromagnetic wave into a vacuum container through a dielectric window provided to generate plasma in the vacuum container and processing a substrate.

5. A vacuum vessel is evacuated while supplying gas into the vacuum vessel, and the inside of the vacuum vessel is controlled to a predetermined pressure.
By supplying high-frequency power of a frequency of 50 MHz to 3 GHz to a flat or annular antenna substantially parallel to a substrate mounted on an electrode in a vacuum vessel, the vacuum vessel is provided through a dielectric window provided on a side surface of the vacuum vessel. A plasma processing method for generating plasma in a vacuum vessel by radiating an electromagnetic wave into the inside of the vacuum vessel to process a substrate.

6. The plasma processing method according to claim 5, wherein the dielectric window is provided on a side surface of the projection of the vacuum vessel provided to face the substrate.

7. While evacuating the inside of the vacuum vessel while supplying gas into the vacuum vessel and controlling the inside of the vacuum vessel to a predetermined pressure,
By supplying high-frequency power of a frequency of 50 MHz to 3 GHz to a flat or annular antenna substantially parallel to a substrate placed on an electrode in a vacuum vessel, by radiating electromagnetic waves into the vacuum vessel through a dielectric window A plasma processing method for processing a substrate by generating plasma in a vacuum vessel, wherein a dielectric window is provided on a side surface of a concave portion of the vacuum vessel provided to face the substrate. Plasma treatment method.

8. The plasma processing method according to claim 1, wherein no DC magnetic field exists in the vacuum vessel.

9. An electromagnetic wave having a frequency of 50 MHz to 300 MHz.
MHz.
Or the plasma processing method according to 7.

10. A vacuum container, a gas supply device for supplying a gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and an inner wall surface of the vacuum container facing a substrate. A dielectric window, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, and a substrate in the vacuum vessel. A plasma processing apparatus comprising: an electrode on which the antenna is mounted; and wherein the antenna is a flat antenna substantially parallel to a plane parallel to the substrate.

11. The flat antenna according to claim 1, wherein an outer diameter of the flat antenna is larger than an outer diameter of the dielectric window.
0. The plasma processing apparatus according to item 0.

12. A vacuum container, a gas supply device for supplying a gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and an inner wall surface of the vacuum container facing a substrate. A dielectric window, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, and a substrate in the vacuum vessel. A plasma processing apparatus comprising: an electrode on which the antenna is mounted; and wherein the antenna is an annular antenna substantially parallel to a plane parallel to the substrate.

13. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, and an annular portion of an inner wall surface of the vacuum container substantially parallel to the substrate. A dielectric window, an antenna for radiating electromagnetic waves into the vacuum vessel through the dielectric window, a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna, And an electrode for mounting a substrate on the substrate, wherein the antenna is a flat or annular antenna substantially parallel to a plane parallel to the substrate.

14. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, a dielectric window provided on a side surface of the vacuum container, An antenna for radiating electromagnetic waves into the vacuum vessel through the body window, and a frequency of 50 MHz to 3 G
And a high-frequency power supply capable of supplying a high-frequency power of 1 Hz and an electrode for mounting the substrate in a vacuum vessel, wherein the antenna is substantially parallel to a plane parallel to the substrate. A plasma processing apparatus, which is a flat or annular antenna.

15. The plasma processing apparatus according to claim 14, wherein the dielectric window is provided on a side surface of the convex portion of the vacuum vessel provided to face the substrate.

16. A vacuum container, a gas supply device for supplying gas into the vacuum container, an exhaust device for exhausting the inside of the vacuum container, a dielectric window, and the inside of the vacuum container via the dielectric window. A plasma processing apparatus comprising: an antenna for radiating electromagnetic waves to the antenna; a high-frequency power supply capable of supplying high-frequency power having a frequency of 50 MHz to 3 GHz to the antenna; and an electrode for mounting a substrate in a vacuum vessel. The antenna is a flat or annular antenna substantially parallel to a plane parallel to the substrate, and the dielectric window is provided on the side surface of the concave portion of the vacuum vessel provided opposite to the substrate. A plasma processing apparatus characterized by the above-mentioned.

17. The plasma processing apparatus according to claim 10, wherein a coil or a permanent magnet for applying a DC magnetic field is not provided in the vacuum vessel.

18. The plasma processing apparatus according to claim 10, wherein the frequency of the high-frequency power supplied to the antenna is 50 MHz to 300 MHz.